TEOS-based low-pressure chemical vapor deposition for gate oxides in 4H–SiC MOSFETs using nitric oxide post-deposition annealing

The use of SiO₂/4H–SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) can be problematic due to high interface state density (D_it) and low field-effect mobility (μ_fe). Here, we present a tetra-ethyl-ortho-silicate (TEOS)-based low-pressure chemical vapor deposition (LPCVD) method for fabricating the gate oxide of 4H–SiC MOSFETs using nitric oxide post-deposition annealing. SiO₂/4H–SiC MOS capacitors and MOSFETs were fabricated using conventional wet and TEOS oxides. The measured effective oxide charge density (Q_eff) and D_it of the TEOS-based LPCVD SiO₂/4H–SiC MOS capacitor with nitridation were 4.27 × 10¹¹ cm⁻² and 2.99 × 10¹¹ cm⁻²eV⁻¹, respectively. We propose that the oxide breakdown field and barrier height were dependent on the effective Q_eff. The measured μ_fe values of the SiO₂/4H–SiC MOSFETs with wet and TEOS oxides after nitridation were, respectively, 11.0 and 17.8 cm²/V due to the stable nitrided interface between SiO₂ and 4H–SiC. The proposed gate stack is suitable for 4H–SiC power MOSFETs.     

Surface passivation in n-type silicon and its application in silicon drift detector

Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10¹⁵ cm^-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.     

SiC热氧化SiO_2层结构的光谱学表征

C原子的存在,不仅影响SiC热氧化SiO2层与SiC间的界面态,也直接影响SiO2层的结构和致密性。本文用红外光谱对SiC和Si热氧化生长SiO2层进行了研究,分析和讨论SiO2/SiC和SiO2/Si的红外反射光谱特征峰,以及不同的热氧化条件和退火过程对这些谱峰的影响,对SiC热氧化SiO2层质量的光谱学表征进行了初步探讨。     

Computational screening of doping schemes for LiTi2(PO4)3 as cathode coating materials

In all-solid-state lithium batteries,the impedance at the cathode/electrolyte interface shows close relationship with the cycle performance.Cathode coatings are helpful to reduce the impedance and increase the stability at the interface effectively.LiTi2(PO4)3(LTP),a fast ion conductor with high ionic conductivity approaching 10^-3S·cm^-1,is adopted as the coating materials in this study.The crystal and electronic structures,as well as the Li^+ion migration properties are evaluated for LTP and its doped derivatives based on density functional theory(DFT)and bond valence(BV)method.Substituting part of Ti sites with element Mn,Fe,or Mg in LTP can improve the electronic conductivity of LTP while does not decrease its high ionic conductivity.In this way,the coating materials with both high ionic conductivities and electronic conductivities can be prepared for all-solid-state lithium batteries to improve the ion and electron transport properties at the interface.     

Effects of chlorine on interfacial properties and reliability of SiO2 grown on 6H-SiC

A new process of oxidizing 6H-SiC in dry O₂+trichloroethylene (TCE) is used to incorporate chlorine in SiO₂. The interface quality and the reliability of 6H-SiC MOS capacitors with gate dielectrics prepared by the process are examined. As compared to the conventional dry O₂ oxidation, the O₂+TCE oxidation results in lower interface-state density, reduced oxide-charge density and enhanced reliability. This could be attributed to the passivation effects of Cl₂ and HCl on the structural defects at/near the SiC/SiO₂ interface, and also their gettering effects on ion contamination. Moreover, post-oxidation NO annealing, especially in a wet ambient, can further decrease the interface-state density and the oxide-charge density. Lastly, an increased oxidation rate induced by TCE is observed and should be useful for reducing the normally high thermal budget of oxide growth. All these are very attractive for fabricating SiC MOSFETs with high inversion-channel mobility and high hot-carrier reliability. PACS 85.30.Tv; 81.65.Mq; 81.05.Hd; 85.30.De; 73.20.At     

[Co (C5O2H8)2]·H3COH的 水热合成和晶体结构

合成了[Co (C5O2H8)2]·H3COH金属配合物,通过X射线衍射仪测得配合物[Co(C5O2HD2]·H3COH的晶体结构.晶体属于单斜晶系,空间群为P2 (1)/c,其晶胞参数为a=0.93325(16)nm,b=1.15015(16)nm,c=1.30029(16)nm,α=90.00°,γ=90.00°,...     

Investigation of a 4H-SiC metal-insulation-semiconductor structure with an Al2O3/SiO2 stacked dielectric

Atomic layer deposited(ALD) Al2O3 /dry-oxidized ultrathin SiO2 films as a high-k gate dielectric grown on 8°off-axis 4H-SiC(0001) epitaxial wafers are investigated in this paper.The metal-insulation-semiconductor(MIS) capacitors,respectively with different gate dielectric stacks(Al2O3/SiO2,Al2O3,and SiO2) are fabricated and compared with each other.The I-V measurements show that the Al2O3/SiO2 stack has a high breakdown field(≥12 MV/cm) comparable to SiO2,and a relatively low gate leakage current of1×10-7A/cm2 at an electric field of4 MV/cm comparable to Al2O3.The 1-MHz high frequency C-V measurements exhibit that the Al2O3/SiO2 stack has a smaller positive flat-band voltage shift and hysteresis voltage,indicating a less effective charge and slow-trap density near the interface.     

新试剂1-（偶氮苯基）-3-（4,5-二甲氧基-2-苯甲酸）-三氮烯与铜（Ⅱ）的显色反应

研究了1-（偶氮苯基）-3-（4,5-二甲氧基-2-苯甲酸）-三氮烯（ABDMBAT）试剂与Cu（Ⅱ）的显色反应。在TritonX-100的存在下,pH 11.0的Na2B4O7-NaOH缓冲溶液中,该试剂与铜形成红色络合物,ABDMBAT与Cu（Ⅱ）形成的络合物的最大吸收峰位于540nm处,表观摩尔吸光系数ε=8.26×104L.mol-1.cm-1,Cu（Ⅱ）在0—14μg/25mL范围内服从比耳定律。     

U型槽刻蚀工艺对GaN垂直沟槽型金属-氧化物-半导体场效应晶体管电学特性的影响

U型槽的干法刻蚀工艺是GaN垂直沟槽型金属-氧化物-半导体场效应晶体管(MOSFET)器件关键的工艺步骤,干法刻蚀后GaN的侧壁状况直接影响GaN MOS结构中的界面态特性和器件的沟道电子输运.本文通过改变感应耦合等离子体干法刻蚀工艺中的射频功率和刻蚀掩模,研究了GaN垂直沟槽型MOSFET电学特性的工艺依赖性.研究结果表明,适当降低射频功率,在保证侧壁陡直的前提下可以改善沟道电子迁移率,从35.7 cm^2/(V·s)提高到48.1 cm^2/(V·s),并提高器件的工作电流.沟道处的界面态密度可以通过亚阈值摆幅提取,射频功率在50 W时界面态密度降低到1.90×10^12 cm^-2·eV^-1,比135 W条件下降低了一半.采用SiO2硬刻蚀掩模代替光刻胶掩模可以提高沟槽底部的刻蚀均匀性.较薄的SiO2掩模具有更小的侧壁面积,高能离子的反射作用更弱,过刻蚀现象明显改善,制备出的GaN垂直沟槽型MOSFET沟道场效应迁移率更高,界面态密度更低.     

SrTiO3金属-绝缘体-半导体结构的介电与界面特性

采用金属有机分解法在p型Si衬底上制备了SrTiO3（STO）薄膜.研究了STO薄膜金属 绝缘体 半导体(MIS)结构的介电和界面特性.结果表明，STO薄膜显示出优异的介电性能，在10kHz处的介电常数约为105，损耗低于001，这来源于多晶结构和良好的结晶性；MIS结构中的固定电荷密度Nf和界面态密度Dit分别约为15×1012cm-2和(14—35)×1012cm-2eV-1，这主要与Si/STO界面处形成的低介电常数界面层有关. 关键词： SrTiO3薄膜 MIS结构 介电性能 Si/STO界面     

新试剂4,4′-二（4-苯偶氮苯氨基重氮基）二苯醚与镉（Ⅱ）的显色反应

研究了新显色剂4,4′-二（4-苯偶氮苯氨基重氮基）二苯醚（PPDPE）与镉（）的显色反应。在Triton X-100存在下,于pH10.22的硼砂-氢氧化钠缓冲溶液中,镉（）与4,4′-二（4-苯偶氮苯氨基重氮基）二苯醚形成摩尔比1∶2的红色络合物,试剂及络合物的最大吸收波长分别为400nm和530nm,表观摩尔吸光系数为2.05×105L.mol-1.cm-1,镉（）含量在0—10.0μg/25mL范围内符合比耳定律。方法用于废水中镉的测定,结果满意。     

1200 V碳化硅功率MOSFET低温特性的实验表征及分析

碳化硅功率MOSFET是宽禁带功率半导体器件的典型代表,具有优异的电气性能。基于低温环境下的应用需求,研究了1200 V碳化硅功率MOSFET在77.7 K至300 K温区的静/动态特性,定性分析了温度对碳化硅功率MOSFET性能的影响。实验结果显示,温度从300 K降低至77.7 K时,阈值电压上升177.24%,漏-源极击穿电压降低32.99%,栅极泄漏电流降低82.51%,导通电阻升高1142.28%,零栅压漏电流降低89.84%(300 K至125 K)。双脉冲测试显示,开通时间增大8.59%,关断时间降低16.86%,开关损耗增加48%。分析发现,碳化硅功率MOSFET较高的界面态密度和较差的沟道迁移率,是导致其在低温下性能劣化的主要原因。     

Identification of the carbon dangling bond center at the 4H-SiC/SiO(2) interface by an EPR study in oxidized porous SiC

We report the observation of a paramagnetic interface defect in thermally oxidized porous n-type doped 4H-SiC/SiO(2). Based on its axial symmetry and resolved hyperfine interactions it is attributed to an sp(3) carbon dangling bond center situated at the SiC side of the interface. This center is electrically active and pins the Fermi level in the oxidized samples. No silicon related paramagnetic dangling bond centers are observed. The formation of dangling bond centers seems to be related to interstitial oxygen diffusion at the interface during the oxidation process.     

过氧化氢-邻氨基酚体系催化显色分光光度法测定痕量铁

在乙酸-乙酸钠缓冲溶液(pH=5.6)介质中.Fe(Ⅲ)催化H2O2氧化邻氨基酚显色,建立了催化显色分光光度法测定痕量铁的新方法.在冰水浴中反应10min,Fe(Ⅲ)线性范围为0-1.2μg/mL,回归方程为△4=0.4923C+0.0258,摩尔吸光系数为2.9×104L·mol-1·cm-1.方法用于广西东兰县产墨...     

新显色剂3,5-二(1-羧基-4,5-二甲氧基-2-苯氨基偶氮基)苯甲酸与铜(Ⅱ)的显色反应

研究了新显色剂3,5-二(1-羧基-4,5-二甲氧基-2-苯氨基偶氮基)苯甲酸(CDMOBAABA)与铜(Ⅱ)的显色反应。在TritonX-100存在下,于pH9.5的NH3-NH4Cl缓冲介质中,CDMOBAABA与铜(Ⅱ)形成棕红色配合物。试剂与络合物的最大吸收波长分别为450nm和540nm。表观摩尔吸光系数为2.43×105L·mol-1.cm-1。铜(Ⅱ)含量在0—20μg/25mL范围内符合比耳定律。该方法用于铝合金样品中铜的测定,结果与原子吸收光谱法相吻合,相对标准偏差1.89%。     

高能Xe离子辐照引起的注碳a:SiO2中新结构的形成

先用120keV的碳离子注入非晶二氧化硅a:SiO2薄膜，再用能量为1754MeV的Xe离子辐照。注碳量为5．0×10^16—8．6×10^17ion／cm^2，Xe离子辐照剂量为1．0×10^11和5．0×10^11ion／cm^2。辐照后的样品中形成的新结构用显微傅立叶变换红外光谱仪进行测试分析。结果表明，Xe离子辐照引起了注碳a:SiO2中Si—C，C—C，Si—O—C键以及CO和CO2分子的形成与演化。在注碳量较高时，Xe离子辐照在样品中产生了大量的Si—C键。与注入未辐照和辐照的低注碳量样品比较，增强的Si—C键的形成，预示着辐照可引起注碳a:SiO2样品中的SiC结构相变。Amorphous silicon-dioxide （a:SiO2） films were firstly implanted at room temperature （RT） with 120 keV C-ions to doses ranging from 5.0 × 10^16 to 8.6 × 10^17 ion/cm^2, and then the C-doped a:SiO2 films were irradiated at RT with 1 754 MeV Xe ions to 1.0 × 10^11 and 5.0 × 10^11 ion/cm^2, respectively. The information of new tex- ture formation in the C-doped SiO2 films after high-energy Xe ion irradiation was investigated using micro-FTIR measurements. The obtained results showed that Si--C, C--C, Si--O--C bonds as well as CO and CO2 molecules were formed in the C-doped a-SiO2 films after Xe ion irradiation. Furthermore, Xe-ion irradiation induced a plenteous formation of Si--C bonds in the high dose C-ion implanted a:SiO2 films. Compared with the C-implanted sampies without Xe-ion irradiation and the low dose C-implanted samples with Xe-ion irraddiation, the enhanced and plenty of Si--C bond formation implied that the phase of SiC structures may be produced by Xe-ion irradiation in the high dose C-ion implanted a:SiO2 films.     

一维链状席夫碱锰（Ⅱ）配合物的合成及结构表征

以1S,2S-环己二胺和乙酰丙酮进行缩合得到N,N′-双（乙酰丙酮）-1S,2S-环己二胺的Schiff碱配体L,再将配体L与MnCl2.4H2O进行配位反应,得到了配合物[MnL2Cl2.L]n（1）,并用元素分析和X射线单晶衍射进行了表征。结果表明,配合物1属于正交晶系,空间群是P212121,晶体参数：a=1.56630（15）nm,b=1.59373（16）nm,c=2.1963（2）nm,V=5.4827（9）nm3,Z=4,Dc=1.164g.cm-3,R1=0.0548,wR2=0.1368。在配合物1中,每个Mn（）的配位环境都是三角双锥。配合物中双齿配体通过其两臂乙酰丙酮亚胺单元的端基氧原子同2个金属离子配位桥联形成一维螺旋链结构。     

6-NO_2-BTAMB与钴显色反应的研究与应用

研究了6-NO2-BTAMB与钴显色反应。实验表明,在pH6.2—7.4(CH2)6N4-HCl体系中,钴与试剂定量地形成稳定的蓝绿色络合物,表观摩尔吸光系数ε650=1.18×105L·mol-1.cm-1;钴浓度在0—6μg/10mL范围内符合比耳定律。用于VB12和钴分子筛中微量钴的测定,结果令人满意。     

Enhanced interface properties of diamond MOSFETs with Al_2O_3 gate dielectric deposited via ALD at a high temperature

The interface state of hydrogen-terminated(C–H) diamond metal–oxide–semiconductor field-effect transistor(MOSFET) is critical for device performance. In this paper, we investigate the fixed charges and interface trap states in C–H diamond MOSFETs by using different gate dielectric processes. The devices use Al_2O_3 as gate dielectrics that are deposited via atomic layer deposition(ALD) at 80℃ and 300℃, respectively, and their C–V and I–V characteristics are comparatively investigated. Mott–Schottky plots(1/C~2–VG) suggest that positive and negative fixed charges with low density of about 1011 cm~(-2) are located in the 80-℃-and 300-℃ deposition Al_2O_3 films, respectively. The analyses of direct current(DC)/pulsed I–V and frequency-dependent conductance show that the shallow interface traps(0.46 e V–0.52 e V and0.53 e V–0.56 e V above the valence band of diamond for the 80-℃ and 300-℃ deposition conditions, respectively) with distinct density(7.8 × 10~(13) e V~(-1)·cm~(-2)–8.5 × 10~(13) e V-1·cm~(-2) and 2.2 × 1013 e V~(-1)·cm~(-2)–5.1 × 10~(13) e V~(-1)·cm~(-2) for the80-℃-and 300-℃-deposition conditions, respectively) are present at the Al_2O_3/C–H diamond interface. Dynamic pulsed I–V and capacitance dispersion results indicate that the ALD Al_2O_3 technique with 300-℃ deposition temperature has higher stability for C–H diamond MOSFETs.     

Low-temperature oxidation of SiC surfaces by supercritical water oxidation

The oxidation process on silicon carbide (SiC) surfaces is important for wide bandgap power semiconductor devices. We investigated SiC oxidation using supercritical water (SCW) at high pressure and temperature and found that a SiC surface can be easily oxidized at low temperature. The oxidation rate is 10 nm/min at 400 °C and 25 MPa, equal to that of conventional thermal dry oxidation at 1200 °C. Low-temperature oxidation should contribute to improved performance in future SiC devices. Moreover, we found that SCW oxidation at 400 °C forms a much smoother SiO₂/SiC interface than that obtained by conventional thermal dry oxidation. A higher oxidation rate and smaller microroughness are achieved at a lower oxidation temperature owing to the high density of oxidizers under SCW conditions.