Syntheses, structures, optical properties, and theoretical calculations of Cs2Bi2ZnS5, Cs2Bi2CdS5, and Cs2Bi2MnS5

Three new compounds, Cs₂Bi₂ZnS₅, Cs₂Bi₂CdS₅, and Cs₂Bi₂MnS₅, have been synthesized from the respective elements and a reactive flux Cs₂S₃ at 973 K. The compounds are isostructural and crystallize in a new structure type in space group Pnma of the orthorhombic system with four formula units in cells of dimensions at 153 K of a=15.763(3), b=4.0965(9), c=18.197(4) Å, V=1175.0(4) Å³ for Cs₂Bi₂ZnS₅; a=15.817(2), b=4.1782(6), c=18.473(3)  Å, V=1220.8(3)  ų for Cs₂Bi₂CdS₅; and a=15.830(2), b=4.1515(5), c=18.372(2) Å, V=1207.4(2) Å³ for Cs₂Bi₂MnS₅. The structure is composed of two-dimensional _∞²[Bi₂MS₅²⁻] (M=Zn, Cd, Mn) layers that stack perpendicular to the [100] axis and are separated by Cs⁺ cations. The layers consist of edge-sharing _∞¹[Bi₂S₆⁶⁻] and _∞¹[MS₃⁴⁻] chains built from BiS₆ octahedral and MS₄ tetrahedral units. Two crystallographically unique Cs atoms are coordinated to S atoms in octahedral and monocapped trigonal prismatic environments. The structure of Cs₂Bi₂MS₅, is related to that of Na₂ZrCu₂S₄ and those of the AMM′Q₃ materials (A=alkali metal, M=rare-earth or Group 4 element, M′= Group 11 or 12 element, Q=chalcogen). First-principles theoretical calculations indicate that Cs₂Bi₂ZnS₅ and Cs₂Bi₂CdS₅ are semiconductors with indirect band gaps of 1.85 and 1.75 eV, respectively. The experimental band gap for Cs₂Bi₂CdS₅ is ≈1.7 eV, as derived from its optical absorption spectrum.     

Synthesis, crystal and band structures, and properties of a new supramolecular complex (Hg2As)2(CdI4)

A new quaternary supramolecular complex (Hg₂As)₂ (CdI₄) (1) has been prepared by the solid-state reaction and structurally characterized by single crystal X-ray diffraction analysis. Compound 1 crystallizes in the space group P2₁ of the monoclinic system with two formula units in a cell: a=7.945(4), b=12.934(6), c=8.094(4) Å, β=116.898°(1), V=741.7(6) Å³. The structure of 1 is characterized by a tridymite-like three-dimensional cationic framework, which is composed of mercury and arsenic atoms, with the channels being occupied by discrete CdI₄²⁻ tetrahedral guest-anions. The optical properties were investigated in terms of the diffuse reflectance and Fourier transform infrared spectra. The electronic band structure along with density of states (DOS) calculated by DFT method indicates that the present compound is a semiconductor with a direct band gap, and that the optical absorption is mainly originated from the charge transitions from I-5p and As-4p to Cd-5s and Hg-6s states.     

Elucidating linear and nonlinear optical properties of defect chalcopyrite compounds ZnX2Te4 (X=Al,Ga, In) from electronic transitions

We presented a theoretical study of electronic band structure of three compounds ZnAl₂Te₄, ZnGa₂Te₄ and ZnIn₂Te₄ using pseudo potential method within density functional theory. Calculated band structures show that all band gaps are direct with at Γ with values of 1.639eV for ZnAl₂Te₄, 1.026eV for ZnGa₂Te₄and 0.836eV ZnIn₂Te₄. The linear properties based on dielectric function and non-linear optical properties based on second harmonic generation (SHG) were computed. The origin of four critical points (peaks) determined from the second derivative of the imaginary part of the dielectric function is elucidated. The use of individual k-points and individual combination of valence and conduction bands dependent matrix of the dielectric function and the nonlinear optical susceptibility allowed to a precise determination of inter band optical transitions. Indeed, inter-band analysis shows the high intensity of non-linear effect compared to linear effect. Moreover, non-linear inter-band optical transitions involve lower valence bands and higher conduction bands.     

Structural, thermodynamic and optical properties of MgF2 studied from first-principles theory

A detailed theoretical study of structural, electronic, elastic, thermodynamic and optical properties of rutile type MgF₂ has been carried out by means of first-principles Density Functional Theory (DFT) calculations using plane wave pseudo-potentials within the local density approximation and generalized-gradient approximation for the exchange and correlation functionals. The calculated ground state properties and elastic constants agree quite well with experimental values. From the calculated elastic constants we conclude that MgF₂ is relatively hard when compared to other alkaline-earth fluorides and ductile in nature. The thermodynamic properties such as heat capacity, entropy, free energy, phonon density of states and Debye temperatures are calculated at various temperatures from the lattice dynamical data obtained through the quasi-harmonic Debye model. From free energy and entropy it is found that the system is thermodynamically stable up to 1200 K. The imaginary part of the calculated dielectric function ε₂(ω) could reproduce the six prominent peaks which are observed in experiment. From the calculated ε(ω), other optical properties such as refractive index, reflectivity and electron energy-loss spectrum are obtained up to the photon energy range of 30 eV.     

Synthesis, structure, and electronic structure of K2CuSbS3

The new compound K₂CuSbS₃ has been synthesized by the reaction of K₂S, Cu, Sb, and S at 823 K. The compound crystallizes in the Na₂CuSbS₃ structure type with four formula units in space group P2₁/c of the monoclinic system in a cell at 153 K of a=6.2712 (6) Å, b=17.947 (2) Å, c=7.4901 (8) Å, β=120.573 (1)°, and V=725.81 (12) Å³. The structure contains two-dimensional layers separated by K atoms. Each layer is built from CuS₃ and SbS₃ units. Each Cu atom is pyramidally coordinated to three S atoms with the Cu atom about 0.4 Å above the plane of the S atoms. Each Sb atom is similarly coordinated to three S atoms but is about 1.1 Å above its S₃ plane. First-principles calculations indicate an indirect band gap of 1.9 eV. These calculations also indicate that there is a bonding interaction between the Cu and Sb atoms. An optical absorption measurement performed with light perpendicular to the (0 1 0) crystal face of a red block-shaped crystal of K₂CuSbS₃ indicates an experimental indirect band gap of 2.2 eV.     

Electronic band structures and photovoltaic properties of MWO4 (M=Zn, Mg, Ca, Sr) compounds

Divalent metal tungstates, MWO₄, with wolframite (M=Zn and Mg) and scheelite (M=Ca and Sr) structures were prepared using a conventional solid state reaction method. Their electronic band structures were investigated by a combination of electronic band structure calculations and electrochemical measurements. From these investigations, it was found that the band structures (i.e. band positions and band gaps) of the divalent metal tungstates were significantly influenced by their crystal structural environments, such as the W-O bond length. Their photovoltaic properties were evaluated by applying to the working electrodes for dye-sensitized solar cells. The dye-sensitized solar cells employing the wolframite-structured metal tungstates (ZnWO₄ and MgWO₄) exhibited better performance than those using the scheelite-structured metal tungstates (CaWO₄ and SrWO₄), which was attributed to their enhanced electron transfer resulting from their appropriate band positions.     

Lattice distortions in layered type arsenides LnTAs2 (Ln=La-Nd, Sm, Gd, Tb; T=Ag, Au): Crystal structures, electronic and magnetic properties

The lanthanide coinage-metal diarsenides LnTAs₂ (Ln=La, Ce-Nd, Sm; T=Ag, Au) have been reinvestigated and their structures have been refined from single crystal X-ray data. Two different distortion variants of the HfCuSi₂ type are found: PrAgAs₂, NdAgAs₂, SmAgAs₂, GdAgAs₂, TbAgAs₂, NdAuAs₂ and SmAuAs₂ crystallize as twofold superstructures in space group Pmcn with the As atoms of their planar layers forming zigzag chains, whereas LaAgAs₂, CeAgAs₂ and PrAuAs₂ adopt a fourfold superstructure (space group Pmca) with cis-trans chains of As atoms. The respective atomic positions can be derived from the HfCuSi₂ type by group-subgroup relations. The compounds with zigzag chains of As atoms exhibit metallic behaviour while those with cis-trans chains are semiconducting as measured on powder pellets. The majority of the compounds including 4f elements show antiferromagnetic ordering at T_N<20 K.     

First-principles investigation of R2O3(ZnO)3 (R=Al, Ga, and In) in homologous series of compounds

Atomic and electronic structures of R₂O₃(ZnO)₃ (R=Al, Ga, and In), which are included in homologous series of compounds, are investigated using first-principles calculations based on density functional theory. Three models with different R atom arrangements in the five-fold and four-fold coordination sites are examined. Al and Ga prefer the five-fold coordination sites. The formation energies are much larger than those of the competing phases, ZnR₂O₄, with a normal spinel structure. On the other hand, In₂O₃(ZnO)₃ shows no clear site preference and can be more stable than the spinel at high temperatures when configurational entropy contribution is taken into account. Electronic states near the conduction band bottom are mainly composed of Zn-4s orbital in Al₂O₃(ZnO)₃, while the contributions of Ga-4s and In-5s are comparable to Zn-4s in Ga₂O₃(ZnO)₃ and In₂O₃(ZnO)₃.     

Structure property relationships in the ATi2O4 (A=Na, Ca) family of reduced titanates

Reduced titanates in the ATi₂O₄ (A=Li, Mg) spinel family exhibit a variety of interesting electronic and magnetic properties, most notably superconductivity in the mixed-valence spinel, Li_1+xTi_2−xO₄. The sodium and calcium analogs, NaTi₂O₄ and CaTi₂O₄, each differ in structure, the main features of which are double rutile-type chains composed of edge-sharing TiO₆ octahedra. We report for the first time, the properties and band structures of these two materials. XANES spectroscopy at the Ti K-edge was used to probe the titanium valence. The absorption edge position and the pre-edge spectral features observed in the XANES data confirm the assignment of Ti³⁺ in CaTi₂O₄ and mixed-valence Ti³⁺/Ti⁴⁺ in NaTi₂O₄. Temperature-dependent resistivity and magnetic susceptibility studies are consistent with the classification of both NaTi₂O₄ and CaTi₂O₄ as small band-gap semiconductors, although changes in the high-temperature magnetic susceptibility of CaTi₂O₄ suggest a possible insulator-metal transition near 700 K. Band structure calculations agree with the observed electronic properties of these materials and indicate that while Ti-Ti bonding is of minimal importance in NaTi₂O₄, the titanium atoms in CaTi₂O₄ are weakly dimerized at room temperature.     

Ternary silicides M2Cr4Si5 (M=Ti, Zr, Hf): filled variants of the Ta4SiTe4 structure type

The isostructural ternary silicides M₂Cr₄Si₅ (M=Ti, Zr, Hf) were prepared by arc-melting of the elemental components. The single-crystal structure of Zr₂Cr₄Si₅ was determined by X-ray diffraction (Pearson symbol oI44, orthorhombic, space group Ibam, Z=4, a=7.6354(12) Å, b=16.125(3) Å, c=5.0008(8) Å). Zr₂Cr₄Si₅ adopts the Nb₂Cr₄Si₅-type structure, an ordered variant of the V₆Si₅-type structure. It consists of square antiprisms that have Zr and Cr atoms at the corners and Si atoms at the centers; they share opposite faces to form one-dimensional chains _∞¹[Zr_4/2Cr_4/2Si] surrounded by additional Si atoms and extending along the c direction. In a new interpretation of the structure, additional Cr atoms occupy interstitial octahedral sites between these chains, clarifying the relation between this structure and that of Ta₄SiTe₄. The formation of short Si-Si bonds in Zr₂Cr₄Si₅ is contrasted with the absence of Te-Te bonds in Ta₄SiTe₄. The compounds M₂Cr₄Si₅ (M=Ti, Zr, Hf) exhibit metallic behavior and essentially temperature-independent paramagnetism. Bonding interactions were analyzed by band structure calculations, which confirm the importance of Si-Si bonding in these metal-rich compounds.     

Systematic study of photoluminescence upon band gap excitation in perovskite-type titanates R1/2Na1/2TiO3:Pr (R=La, Gd, Lu, and Y)

Pr³⁺-doped perovskites R_1/2Na_1/2TiO₃:Pr (R=La, Gd, Lu, and Y) were synthesized, and their structures, optical absorption and luminescent properties were investigated, and the relationship between structures and optical properties are discussed. Optical band gap of R_1/2Na_1/2TiO₃ increases in the order R=La, Gd, Y, and Lu, which is primarily due to a decrease in band width accompanied by a decrease in Ti-O-Ti bond angle. Intense red emission assigned to f-f transition of Pr³⁺ from the excited ¹D₂ level to the ground ³H₄ state upon the band gap photo-excitation (UV) was observed for all compounds. The wavelength of emission peaks was red-shifted in the order R=La, Gd, Y, and Lu, which originates from the increase in crystal field splitting of Pr³⁺. This is attributed to the decrease in inter-atomic distances of Pr-O together with the inter-atomic distances (R, Na)-O, i.e., increase in covalency between Pr and O. The results indicate that the luminescent properties in R_1/2Na_1/2TiO₃:Pr are governed by the relative energy level between the ground and excited state of 4f² for Pr³⁺, and the conduction and valence band, which is primarily dependent on the structure, e.g., the tilt of TiO₆ octahedra and the Pr-Ti inter-atomic distance and the site symmetry of Pr ion.     

Synthesis, crystal and band structures, and optical properties of a new lanthanide-alkaline earth tellurium(IV) oxide: La2Ba(Te3O8)(TeO3)2

A new quaternary lanthanide alkaline-earth tellurium(IV) oxide, La₂Ba(Te₃O₈)(TeO₃)₂, has been prepared by the solid-state reaction and structurally characterized. The compound crystallizes in monoclinic space group C2/c with a=19.119(3), b=5.9923(5), c=13.2970(19) Å, β=107.646(8)°, V=1451.7(3) Å³ and Z=4. La₂Ba(Te₃O₈)(TeO₃)₂ features a 3D network structure in which the cationic [La₂Ba(TeO₃)₂]⁴⁺ layers are cross-linked by Te₃O₈⁴⁻ anions. Both band structure calculation by the DFT method and optical diffuse reflectance spectrum measurements indicate that La₂Ba(Te₃O₈)(TeO₃)₂ is a wide band-gap semiconductor.     

Electronic band structures and physical properties of ALnTe4 and ALn3Te8 compounds (A=alkali metal; Ln=lanthanoid)

We report about the LMTO-ASA band structure, ELF and COHP calculations for a number of alkali metal rare earth tellurides of the formulas ALnTe₄ (A=K, Rb, Cs and Ln=Pr, Nd, Gd) and KLn₃Te₈ (Ln=Pr, Nd) to point out structure-properties relations. The ALnTe₄ compounds crystallize in the KCeSe₄ structure type with Te ions arranged in the form of 4.3².4.3 nets, in which interatomic homonuclear distances indicate an arrangement of isolated dumbbells. This could be verified by the COHP and ELF calculations, both of which revealed isolated [Te₂] units. But in contrast to the ionic formulation as A⁺Ln³⁺ ([Te₂]²⁻)₂, which can be deduced from this observation, the band structure calculations for KPrTe₄, KNdTe₄, RbNdTe₄ and CsNdTe₄ reveal metallic conductivity. This behavior was verified for KNdTe₄ by resistivity measurements performed by a standard four-probe technique. We explain these results by an incomplete carryover of electrons from the rare earth cation onto tellurium due to covalent bonding leaving parts of the Te-Te ppπ^* antibonding states unoccupied. On the other hand the calculations suggest insulating behavior for KGdTe₄ resulting from a complete filling of the Te-Te ppπ^* antibonding states due to the increased stability of the half filled 4f shell. The ALn₃Te₈ compounds crystallize in the KNd₃Te₈ structure type, a distorted addition-defect variant of the NdTe₃ type with 4⁴ Te nets. As polyanionic fragments L-shaped [Te₃]²⁻ and infinite zig-zag chains _∞¹[Te₄]⁴⁻ are observed (with interatomic homonuclear distances in the range 2.82-3.00 Å), which are separated from each other by distances in the range 3.27-3.49 Å. Again COHP calculations made evident that these latter interactions are secondary. Within the infinite zig-zag chains _∞¹[Te₄]⁴⁻ the Te ions at the corners of the chain have a higher negative charge than the linear coordinated ones in the middle. KPr₃Te₈ and KNd₃Te₈ are semiconductors, verified for the latter by resistivity measurements.     

Four new hydroxymonophosphates with closely related intersecting tunnels structures: The series AM(PO3(OH))2 with A=Rb, Cs; M=Fe, Al, Ga, In

The family of hydroxymonophosphates of generic formula AM^III(PO₃(OH))₂ has been revisited using hydrothermal techniques. Four new phases have been synthesized: CsIn(PO₃(OH))₂, RbFe(PO₃(OH))₂, RbGa(PO₃(OH))₂ and RbAl(PO₃(OH))₂. Single crystal diffraction studies show that they exhibit two different structural types from previously observed other phases with A=H₃O, NH₄, Rb and M=Al, V, Fe. The “Cs-In” and “Rb-Fe” phosphates crystallize in the triclinic space group , with the cell parameters a=7.4146(3) Å, b=9.0915(3) Å, c=9.7849(3) Å, α=65.525(3)°, β=70.201(3)°, γ=69.556(3)° and V=547.77(4) Å³ (Z=3) for CsIn(PO₃(OH))₂ and a=7.2025(4) Å, b=8.8329(8) Å, c=9.4540(8) Å, α=65.149(8)°, β=70.045(6)°, γ=69.591(6)° and V=497.44(8) Å³ (Z=3) for α-RbFe(PO₃(OH))₂. The “Rb-Al” and “Rb-Ga” phosphates crystallize in the Rc space group, with a=8.0581(18) Å and c=51.081(12) Å (V=2872.5(11) Å³ and Z=18) for RbAl(PO₃(OH))₂ and a=8.1188(15) Å and c=51.943(4) Å (V=2965(8) Å and Z=18) for RbGa(PO₃(OH))₂. These two structural types are closely related. Both are built up from M^IIIO6 octahedra sharing their apices with PO₃(OH) tetrahedra to form [M₃(PO₃OH)₆] units, but the latter exhibits a different configuration of their tetrahedra. The three-dimensional host-lattices result from the connection of the [M₃(PO₃OH)₆] units and they present numerous intersecting tunnels containing the monovalent cations.     

Synthesis and characterizations of two anhydrous metal borophosphates: M2BP3O12 (M=Fe, In)

Two members of M^III₂BP₃O₁₂ borophosphates, namely Fe₂BP₃O₁₂ and In₂BP₃O₁₂, were synthesized by the solid-state method and characterized by the X-ray single crystal diffraction, the powder diffraction and the electron microscopy. They both crystallize in the hexagonal system, space group P6(3)/m (no. 176) and feature 3D architectures, build up of the M₂O₉ units and B(PO₄)₃ groups via sharing the corners; however, they are not isomorphic for the different crystallographically distinct atomic positions. Optical property measurements of both compounds and magnetic susceptibility measurements of Fe₂BP₃O₁₂ also have been performed. Moreover, in order to gain further insights into the relationship between physical properties and band structure of the M^III₂BP₃O₁₂ borophosphates, theoretical calculations based on density functional theory (DFT) were performed using the total-energy code CASTEP.     

KBiMS4 (M=Si, Ge): Synthesis, structure, and electronic structure

Two new bismuth sulfides KBiSiS₄ and KBiGeS₄ have been synthesized by means of the reactive flux method. They adopt the RbBiSiS₄ structure type and crystallize in space group P2₁/c of the monoclinic system. The structure consists of (M=Si, Ge) layers separated by bicapped trigonal-prismatically coordinated K atoms. The M atom is tetrahedrally coordinated to four S atoms and the Bi atom is coordinated to a distorted monocapped trigonal prism of seven S atoms. The optical band gap of 2.25(2) eV for KBiSiS₄ was deduced from the diffuse reflectance spectrum. From a band structure calculation, the optical absorption for KBiSiS₄ originates from the layer. The Si 3p orbitals, Bi 6p orbitals, and S 3p orbitals are highly hybridized near the Fermi level. The orbitals of K have no contributions on both the upper of valence band and the bottom of conduction band.     

Syntheses, structures, and magnetic properties of the europium(II) selenido pnictogenates(III), EuPnSe3 (Pn=Sb, Bi)

EuPnSe₃ (Pn=Sb, Bi) have been synthesized through the reaction of Eu with Pn₂Se₃ (Pn=Sb, Bi) and Se at 850-900 °C. These compounds are isotypic with SrPnSe₃ (Pn=Sb, Bi) and consist of square pyramidal PnSe₅ units and distorted PnSe₆ octahedra that form hollow columns that extend along the c-axis. These columns are separated by Eu²⁺ cations that occur as nine-coordinate tricapped trigonal prisms. There are also additional V-shaped triselenide Se₃²⁻ anions between the columns that bind the Eu²⁺ cations. The Se?Se contacts (in EuSbSe₃) in these units are 2.4584(11) and 2.4359(11) Å, which are consistent with Se-Se single bonds. The overall structure is chiral. Bond-valence sum calculations indicate that these compounds contain Eu²⁺. Magnetic susceptibility measurements provide values of 7.66 μ_B/Eu for EuSbSe₃ and 7.64 μ_B/Eu for EuBiSe₃, which are close to the expected free-ion moment for Eu²⁺. These compounds follow essentially Curie behavior from 300 to 5 K, and undergo an apparently antiferromagnetic transition below 5 K. Crystallographic data: EuSbSe₃, orthorhombic, space group P2₁2₁2₁, , , , , Z=16, R(F)=2.63% for 183 parameters and 5095 reflections with I>2σ(I); EuBiSe₃, orthorhombic, space group P2₁2₁2₁, , , , , Z=16, R(F)=2.68% for 183 parameters and 4895 reflections with I>2σ(I).     

Syntheses, crystal structures and optical properties of the first strontium selenium(IV) and tellurium(IV) oxychlorides: Sr3(SeO3)(Se2O5)Cl2 and Sr4(Te3O8)Cl4

Two new quaternary strontium selenium(IV) and tellurium(IV) oxychlorides, namely, Sr₃(SeO₃)(Se₂O₅)Cl₂ and Sr₄(Te₃O₈)Cl₄, have been prepared by solid-state reaction. Sr₃(SeO₃)(Se₂O₅)Cl₂ features a three-dimensional (3D) network structure constructed from strontium(II) interconnected by Cl⁻, SeO₃²⁻ as well as Se₂O₅²⁻ anions. The structure of Sr₄(Te₃O₈)Cl₄ features a 3D network in which the strontium tellurium oxide slabs are interconnected by bridging Cl⁻ anions. The diffuse reflectance spectrum measurements and results of the electronic band structure calculations indicate that both compounds are wide band-gap semiconductors.     

Au@Gen (n=2-9)团簇的几何结构和电子性质的理论研究

本文选用密度泛函B3LYP方法在Lan L2DZ基组上对Au Gen+(n=2~9)团簇的几何结构和电子性质进行了理论研究,其中包括结构优化、平均键能、HOMO-LUMO能隙和电荷转移等。结果表明,随着锗原子数的不断增加,这些掺杂团簇逐渐形成了三维立体结构,并发现Au Ge7+和Au Ge9+两个掺杂团簇是相对稳定的,而且这些掺杂团簇的电荷转移主要是由金原子到锗原子骨架上。此外,还模拟了这些掺杂团簇的红外光谱,为以后实验研究提供有价值的理论参考。     

Electronic structure of X2 Y3 molecules (X = B, Al, Ga; Y = O,S): A theoretical study

Ab initio molecular orbital and density functional theory calculations on X₂Y₃ (X = B, Al,Ga; Y = O,S) indicate a bent structure withC _2v symmetry to be the preferred arrangement for B₂ O₃, B₂ S₃ and Al₂S₃. In contrast, the linear isomer is favoured for Al₂ O₃ and Ga₂ O₃. These are in agreement with the experimentally observed structures. The electronegativity difference between X and Y, the MO patterns and the ionic nature of the bonding explain variations in the molecular structure. The results from the two theoretical approaches (MP2/6-31G* and Becke3LYP/6-311 +G* level) are comparable.