X射线光电子能谱

X射线光电子能谱（X-ray photoelectron spectroscopy，XPS）技术也被称作用于化学分析的电子能谱（electron spectroscopy for chemical analysis，ESCA）．XPS属表面分析法，它可以给出固体样品表面所含的元素种类、化学组成以及有关的电子结构重要信息，在各种固体材料的基础研究和实际应用中起着重要的作用．文章简要介绍了XPS仪器的工作原理和分析方法，并给出了XPS在科学研究工作中的应用实例．     

铀与UO2表面铝薄膜生长行为的俄歇电子能谱分析

主要利用俄歇电子能谱（AES）原位分析了室温下铀与UO2表面铝薄膜的生长行为。在俄歇电子能谱仪超高真空室中，利用Ar^＋枪溅射铝靶，使其沉积到铀基体上，然后利用电子枪适时采集表面俄歇电子能谱，原位分析铝薄膜的生长过程。在UO2表面沉积铝膜时，先往真空室中充入氧气，将清洁铀表面氧化成UO2，然后再溅射铝靶原位沉积制备铝薄膜。     

a—C：H（N）薄膜结构的X射互光电子能谱分析

采用直流－射频等离子增强化学汽相沉积技术制备ａ（Ｃ：Ｈ（Ｎ）薄膜，用Ｘ射互光电子能谱研究了混合气体中Ｎ２含量对薄膜成分与结构的影响，ａ－Ｃ：Ｈ（Ｎ）薄膜中含氮量可达９．０９％，对ａ－Ｃ：Ｈ（Ｎ）薄膜的Ｎｌｓ结合能谱的分析表明ａ－Ｃ：Ｈ（Ｎ）薄膜的结构是由Ｃ３Ｎ４相镶嵌在ｓｐ＾２键结合的Ｃｘ基体组成，其中Ｃ３Ｎ４相中Ｎ和Ｃ原子比接近４：３，不随薄膜中含Ｎ量改变，薄膜中Ｃ３Ｎ４相和ｓｐ＾３碳伯含量随Ｎ     

铀与表面铝薄膜界面反应的俄歇电子能谱分析

主要利用俄歇电子能谱（AES）研究了室温下铀、UO2与表面铝薄膜之间的界面反应，以及退火对界面反应的影响。在俄歇电子能谱仪超高真空室中，利用Ar^＋枪溅射铝靶，使其分别逐步沉积到铀基体与UO2表面上，然后利用电子枪适时采集表面俄歇电子能谱，研究膜基界面反应。     

Co:BaTiO3/Si(100)纳米复合薄膜制备、微结构及其紫外光电子能谱研究

采用脉冲激光气相沉积(PLD)方法,在Si(100)晶面上制备了Co:BaTiO₃纳米复合薄膜.采用X射线衍射(XRD)结合透射电镜(TEM)方法研究了两种厚度Co:BaTiO₃纳米复合薄膜的晶体结构,当薄膜厚度约为30 nm时,薄膜为单一择优取向;当薄膜厚度约为100nm时,薄膜呈多晶结构.原子力显微镜(AFM)分析表明,当膜厚为30nm时,薄膜呈现明显的方形晶粒.采用紫外光电子能谱(UPS)研究了Co的价态和Co:BaTiO₃纳米复合薄 关键词： 3')" href="#">BaTiO₃ 纳米复合薄膜 紫外光电子能谱     

可用于光存储和光学信息处理的SrS（Eu,Sm）电子俘获薄膜的研究

报道用电子束蒸发法制备的ＳｒＳ（Ｅｕ，Ｓｍ）电子俘获薄膜的特性，给出了这种薄膜的Ｘ射线衍射图、原子力显微镜（ＡＦＭ）形貌观察结果、光谱及存储的图像照片等。结果表明所制备的电子俘获薄膜具有很好的光学特性，具有应用在光存储和光学信息处理上的能力。     

微波放电法生长GaS薄膜的性质

报道了微波放电法在GaAs表面与Al金属片上生长GaS薄膜．用俄歇电子能谱（AES）和卢瑟福背散射能谱（RBS）分析了薄膜的成分，X射线衍射测试了薄膜的结构．结果表明，微波放电法生长的GaS薄膜是属于六方晶系的多晶材料．此外，用椭圆偏振光谱测定了GaS薄膜的折射率以及由金属/绝缘体/金属（MIM）结构的电容值得到GaS薄膜的介电常数 关键词：     

Sb掺杂SrTio3透明导电薄膜的光电子能谱研究

用X射线光电子能谱和同步辐射光电子能谱研究了Sb掺杂的钙钛矿型氧化物SrTi1-xSbxO3(x=0.05,0.10,0.15,0.20)薄膜的电子结构.薄膜由紫外脉冲激光淀积在SrTiO3(001)单晶衬底上.该薄膜系列在可见光波段透明,透过率均超过90%.其导电性与掺杂浓度有关,当Sb掺杂浓度x=0.05时,薄膜显示金属型导电性.X射线光电子能谱和同步辐射光电子能谱研究结果表明,Sb掺杂在母化合物SrTiO3的禁带内引入了浅杂质能级和深杂质能级.浅杂质能级上的退局域化电子离化到导带中会产生一定的传导电 关键词： 光电子能谱 光学透过率 脉冲激光沉积薄膜     

SiO2薄膜的制备方法与性质

本文采用光电子能谱和扫描电镜方法研究了溅射沉积条件对SiO2薄膜的表面上的针孔、薄膜原子结构的影响,并分析了不同条件下制备的SiO2薄膜中电子的输运过程.     

角分辨光电子能谱技术及其应用进展

角分辨光电子能谱（ARPES）是研究晶体表面电子结构,如能带,费米面,以及多体相互作用的重要工具。本文概述了光电子激发的一般过程和单粒子近似下的理论模型。详细讨论了角分辨光电子能谱的能带勾画（Energy Band Mapping）和费米面成像（Fermi Surface Mapping）技术,以及高分辨下的角分辨光电子能谱在强相关体系研究中的应用。文章最后简单介绍了当前角分辨光电子能谱研究的新进展,如研究宽禁带半导体材料的表面电子结构,有机功能材料与金属的界面,金属超薄膜中的量子阱态,以及高温超导机理研究等。     

Surface composition and electronic properties of indium tin oxide and oxynitride films

The surface properties of indium tin oxynitride films prepared by rf-sputtering in nitrogen atmosphere were investigated by X-ray and ultraviolet photoelectron spectroscopy as well as electron energy loss spectroscopy and Auger electron spectroscopy depth profiling. The results are compared to reference measurements on conventional rf-sputtered indium tin oxide films. The incorporated nitrogen is present in different chemical environments. Employing these different spectroscopic techniques, it was found that desorption of nitrogen from the ITON structure upon annealing is the origin of the observed drastical changes in the surface composition and electronic structure. The formation of oxygen vacancies and Sn surface segregation upon annealing is linked to improvements in the physical properties (larger spectral range of transmittance and higher conductivity) of the films.     

Chemical and structural analysis of low-temperature excimer-laser annealing in indium-tin oxide sol-gel films

We investigated the influence of excimer-laser annealing (ELA) on the electrical, chemical, and structural properties of indium–tin oxide (ITO) films prepared by a solution process. The ITO film was prepared by the sol-gel method and annealed by excimer-laser pulses with an energy density up to 240?mJ/cm². Hall measurements showed that the ELA substantially enhanced the electrical properties of the ITO films, including their resistivity, carrier density, and mobility, as increasing the laser energy density. In-depth x-ray photoelectron spectroscopy analysis of the chemical states in the film surface showed that the ELA reduced carbon species and promoted both an oxidation and crystallization. These changes were consistent with results of x-ray diffraction and transmission electron microscopy measurements, where expansions in the microcrystal growth were observed for higher laser energy density. We comprehensively understand that the chemical rearrangement and concomitant crystallization are the main factors for achieving the electrical properties during the ELA. These results suggest the potential of the ELA-treated sol-gel films for providing high-quality ITO films at low temperatures toward the flexible device applications.     

Optical and structural properties of pulsed laser ablation deposited ZnO thin film

A limited number of reports exists in the literature concerning the systematic study of the structural and optical properties of ZnO thin films, produced by pulsed laser ablation, in correlation with the deposition parameters adopted. In this paper we present a characterization of a sample prepared by this technique and studied by photoelectron spectroscopy and X-ray diffraction. The dielectric function of both target and films has been deduced by reflection electron energy loss spectroscopy.     

X-ray photoelectron and X-ray Auger electron spectroscopy studies of heavy ion irradiated C60 films

The influence of 200 MeV Au ion irradiation on the surface properties of polycrystalline fullerene films has been investigated. The X-ray photoelectron and X-ray Auger electron spectroscopies are employed to study the ion-induced modification of the fullerene, near the surface region. The shift of C 1s core level and decrease in intensity of shake-up satellite were used to investigate the structural changes (like sp² to sp³ conversion) and reduction of π electrons, respectively, under heavy ion irradiation. Further, X-ray Auger electron spectroscopy was employed to investigate hybridization conversion qualitatively as a function of ion fluence.     

The adsorption of oxygen and water on Ca and CaO films studied with MIES, UPS and XPS

Metastable induced electron spectroscopy (MIES), Ultraviolet photoelectron spectroscopy (UPS), and X-ray photoelectron spectroscopy (XPS) are employed to study the adsorption of water on Ca and CaO films as well as the adsorption of oxygen on Ca films. Ca films are prepared by evaporation of Ca onto clean Si(1 0 0) substrates. CaO films are produced by Ca evaporation in an oxygen atmosphere at a substrate temperature of 400 °C. Gas adsorption on the Ca films at room temperature, both for oxygen and water, is initiated by complete dissociation of the impinging molecules leading to the formation of Ca–O bonds. Exposure to water furthermore leads to the formation of hydroxyl groups via hydrogen abstraction from water forming a complete surface layer. Hydroxyl groups are also formed upon exposure of CaO films to water, but to a significantly smaller amount compared to Ca films exposed to water.     

Effect of filament biasing on nanocrystalline-Si films deposited by hot wire chemical vapor deposition

Nanocrystalline silicon (nc-Si) films were deposited by hot wire chemical vapor deposition with applying positive or negative filament biases. These films were characterized by Raman spectroscopy, field emission scanning electron microscopy and X-ray photoelectron spectroscopy. Plasmon loss of the Si(2p) band region was shifted to higher energy due to dielectric changes with applied filament biases from negative to positive voltage. A semi-quantitative study of the valence band structure was employed to analyze the bias effect of the valance band in nc-Si networks. Nc-Si with a positive filament bias shows better microstructural properties than those with a negative bias and without biasing nc-Si films.     

Growth of thin silver films on silicon oxide pretreated by low temperature argon plasma

In the present study, we investigate the influence of low energy ion bombardment on nucleation and growth of thin silver films on silicon oxide by in situ photoelectron spectroscopy (PES) combined with specific resistivity measurements. Thermally grown thin silicon oxide films were exposed to a low temperature argon plasma for different time intervals resulting in changes in surface chemical composition as monitored by angle-resolved X-ray photoelectron spectroscopy (ARXPS). We demonstrate that irradiation of the oxide surface with low energy ions results in substantially changed nucleation of silver. Furthermore, silver films deposited on plasma treated oxide tend to have lower resistivity which is attributed to the effect of reduced grain boundary and surface roughness.     

Influence of ion implantation on titanium surfaces for medical applications

The implantation of ions into the near surface layer is a new approach to improve the osseointegration of metallic biomaterials like titanium. Meanwhile it is well known that surface topography and surface physico-chemistry as well as visco-elastic properties influence the cell response after implantation of implants into the human body. To optimize the cell response of titanium, ion implantation techniques have been used to integrate calcium and phosphorus, both elements present in the inorganic bone phase. In this context, the concentration profile of the detected elements and their chemical state have been investigated using X-ray photoelectron spectroscopy and Auger electron spectroscopy depth profiling. Ion implantation leads to strong changes of the chemical composition of the near surface region, which are expected to modify the biofunctionality as observed in previous experiments on the cell response. The co-implantation of calcium and phosphorus samples, which showed best results in the performed tests (biological and physical), leads to a strong modification of the chemical surface composition.     

电子束在VO2薄膜中引起的价态、相结构和光学性能的改变

 利用能量为1.7MeV, 注量分别为1.25×10¹³/cm², 1.25×10¹⁴/cm², 1.25×10¹⁵/cm²的电子束辐照VO₂薄膜,采用XPS, XRD等测试手段对电子辐照前后的样品进行分析,并研究了电子辐照对样品相变过程中光透射特性的影响。结果表明电子辐照引起VO₂薄膜中V离子出现价态变化现象,并使薄膜的X射线衍射峰发生变化。电子辐照在样品中产生的这些变化显著改变了VO₂薄膜的热致相变光学特性。     

Interplay of strain and interdiffusion in Heusler alloy bilayers

Combining conventional and inverse magnetocaloric materials promises to enhance solid state refrigeration. As a first step here we present epitaxial Ni–Mn–Ga/Ni–Mn–Sn bilayer films. We examine the dependence of the lateral and normal lattice constants on the deposition sequence by combining experimental and ab initio techniques. Structural properties are determined with X‐ray diffraction as well as highresolution transmission electron microscopy, while ab initio calculations explain the interplay of strain, local relaxations and the interdiffusion of atoms. The latter is confirmed by Auger electron spectroscopy and is expected to have a noticeable impact on the functional properties of the Heusler materials. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)