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1.
The chemical states of GeTe thin film are investigated using high-resolution X-ray photoelectron spectroscopy (HRXPS) with synchrotron radiation, during amorphous to crystalline structural phase transition. As the temperature increases from 250 to 400 °C, we observe the rock-salt crystalline structure and phase with X-ray diffraction (XRD) and transmission electron microscopy (TEM). Spin-orbit splitting of the Ge 3d core-level spectrum clearly appears after annealing at 400 °C for 5 min. However, the binding energy of the Ge 3d5/2 core-level peak of 29.8 eV does not change in the amorphous to crystalline structural phase transition. In the case of the Te 4d core-level, change in binding energy and peak shapes is also negligible. We assume that the Te atom is fixed at a site between the amorphous and crystalline phases. Although the structural environment of the Ge atoms changes during the structural phase transition, the chemical environment does not.  相似文献   

2.
Two alloys of the Co-Ge system were produced by mechanical alloying starting from the elemental powders in the compositions Co20Ge80 and Co40Ge60. The crystalline structures of the CoxGe100−x (x=20, 40) alloys obtained were investigated using the X-ray diffraction (XRD) technique. The measured XRD patterns showed the presence of the peaks corresponding to the crystalline m-CoGe phase and also to the high pressure and temperature phase c-CoGe in the as-milled sample for Co20Ge80, although it was milled at room temperature and pressure. For Co40Ge60, the crystalline Co3Ge2 phase was obtained, and structural data for all phases were determined by means of a Rietveld refinement procedure. The thermal stability of the phases was investigated performing a heat treatment of the alloys at 450 °C for 6 h and, after that, new XRD measurements were collected and were also studied using a Rietveld refinement procedure. The m-CoGe and Co3Ge2 phases seem to be very stable, but the relative amount of c-CoGe decreases a little, indicating a less stable phase, which can be explained by the fact that it is produced usually under extreme conditions.  相似文献   

3.
The ball milling process was used to obtain nanocrystalline cubic silicon. Between 5 and 10 h of milling, amorphous silicon was also formed. The differential scanning calorimetry (DSC) spectrum of a powder milled for 10 h showed that the amorphous–crystalline phase transition occurs at about 450 °C. According to Raman spectroscopy and X‐ray diffraction results, volume fractions of the crystalline, interfacial and amorphous phases were about 30, 39 and 31%, respectively. Copyright © 2010 John Wiley & Sons, Ltd.  相似文献   

4.
Differential scanning calorimetry, X-ray diffraction and room temperature Mössbauer spectrum measurements of Fe73.5Cu1Nb3Si13.5B9 (Finemet) alloy have been carried out in order to study its structural and magnetic properties as a function of annealing temperature. The DSC profile of as-quenched Finemet showed two exothermic peaks at 530 and 702 °C, corresponding to two crystallization processes. The Finemet alloy remains amorphous at 450 °C with one broad peak in XRD pattern and one broad sextet in Mössbauer spectrum. When the Finemet alloy was annealed at 550 °C, only well indexed body-center-cubic phase was detected. After being annealed at 650 and 750 °C, the XRD patterns showed the coexistence of α-Fe(Si) and Fe-B intermetallic phases with the increase in XRD peak intensities, indicating the growth of crystallites and the decomposition of Fe73.5Cu1Nb3Si13.5B9 alloy at elevated temperatures. The Mössbauer spectra of annealed Finemet alloy could be fitted with 4 or 5 sextets and one doublet at higher annealing temperatures, revealing the appearance of different crystalline phases corresponding to the different Fe sites above the crystallization temperature. The appearance of the nanocrystalline phases at different annealing temperatures was further confirmed by the recoilless fraction measurements.  相似文献   

5.
The structure and photoluminescence properties of TiO2-coated ZnS nanowires were investigated. ZnS nanowires were synthesized by thermal evaporation of ZnS powder and then coated with TiO2 by using the metal organic chemical vapor deposition (MOCVD) technique. We performed scanning electron microscopy, transmission electron microscopy (TEM), X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy, and photoluminescence (PL) spectroscopy to characterize the as-synthesized and TiO2-coated ZnS nanowires. TEM and XRD analyses revealed that the ZnS core and the TiO2 coatings had crystalline zinc blende and crystalline anatase structures, respectively. PL measurement at room temperature showed that the as-synthesized ZnS nanowires had two emissions: a blue emission centered in the range from 430 to 440 nm and a green emission at around 515 nm. The green emission was found to be dominant in the ZnS nanowires coated with TiO2 by MOCVD at 350°C for one or more hours, while the blue emission was dominant in the as-synthesized ZnS nanowires. Also the mechanisms of the emissions were discussed.  相似文献   

6.
A comprehensive review of our recent experimental and theoretical developments in the processing of nanocrystalline soft magnetic materials made by crystallization of amorphous precursors and containing new nanocrystalline phases is given. The relationship between the structures of the metastable and equilibrium phases and their transformations are discussed. Nickel-rich amorphous precursors with stoichiometry Ni64Fe16Zr7B12Au1 were produced by melt-spinning technique and then heat-treated at temperatures ranged from 420 °C to 600 °C for one hour to form nanostructured alloy. The transformation from the amorphous state into the nanocrystalline state was investigated by the differential scanning calorimetry (DSC), the x-ray diffraction (XRD), the vibrating sample magnetometry (VSM) and Mössbauer techniques. The annealing favours the emergence of cubic FexNi23-xB6 crystalline grains (10-25 nm in diameter). Magnetic measurements made at 4.2-1100 K reveal rather high value of saturation magnetization (nearly 60 and 40 Am2/kg at 4.2 K and room temperature, respectively) in amorphous as well as in nanocrystalline states. These facts are consistent with 300 K 57Fe Mössbauer results which are well supported by the calculations of Ni and Fe magnetic moments in Ni23B6 and Fe23B6 phases, using the spin polarized tight binding linear muffin-tin orbital (TB-LMTO) method. However, anomalous high magnetic moments of Fe and Co atoms were found in some inequivalent positions in the crystal structure.  相似文献   

7.
ABSTRACT

The stages of crystallization of magnetron sputter-deposited Ni63Zr37 film with mostly amorphous structure have been investigated by differential scanning calorimetry (DSC) and in-situ annealing at 300°C by use of heating stage on a high-resolution transmission electron microscope (HRTEM). These results have been further confirmed by grazing incidence X-ray diffraction analyses of thin film specimens annealed ex-situ at 300°C for various durations. The temperature for crystallization found by DSC has been found to increase from 371°C to 434°C with an increase in heating rate from 3°C/min to 10°C/min, and the apparent activation energy for amorphous to crystalline transformation has been found as ~260.2?kJ/mol from the Kissinger plot. Studies on HRTEM using in-situ heating stage have shown the crystallization to occur on annealing at 300°C for ~10?min. Crystallization at a temperature lower than that found by DSC is attributed to structural relaxation with reduction of free volume due to thermal activation. It has been observed that Ni3Zr forms first due to its large negative enthalpy of formation, and is followed by the formation of Ni-rich solid solution (Niss) grains. HRTEM studies have shown grain rotation with the formation of partial dislocations at Ni3Zr-Niss interfaces as well as twinning followed by detwinning with dislocation formation in the Niss matrix possibly to reduce the interfacial energy.  相似文献   

8.
ZrO2–mullite nanocomposites were fabricated by in-situ-controlled crystallization of Si–Al–Zr–O amorphous bulk at 800–1250°C. The structural evolution of the Si–Al–Zr–O amorphous, annealed at different temperatures, was studied by X-ray diffraction, infrared, Laser Raman spectroscopy, field emission scanning electron microscopy, and high-resolution transmission electron microscopy. The materials consisted of an amorphous phase up to 920°C at which phase separation of Si-rich and Al, Zr-rich clusters occurred. The crystalline phases of t-ZrO2 and mullite were observed at 950°C and 1000°C, respectively. Mullite with a tetragonal structure, formed by the reaction between Al–Si spinel and amorphous silica at low temperature, changed into an orthorhombic structure with the increase of temperature. It was the phase segregation that improved crystallization of the Si–Al–Zr–O amorphous bulk. The anisotropic growth of mullite was observed and the phase transformation from t-ZrO2 to m-ZrO2 occurred when the temperature was higher than 1100°C.  相似文献   

9.
Curie temperature, crystal structure and crystallization behavior of amorphous alloys with the stoichiometry Fe81−xNixZr7B12 (x=10–60) have been studied by X-ray diffractometry (XRD), differential scanning calorimetry (DSC) and AC-magnetization (TMAG) measurements as functions of temperature. The thermal stability of long-range magnetic order, TC vs. Ni content in as-quenched amorphous alloys exhibits maximum at 352 °C for x=40. The primary crystallization has been detected during annealing at the first crystallization stage of all ribbons investigated.  相似文献   

10.
Mössbauer spectroscopy, X-ray diffractometry, scanning calorimetry and electrochemical measurements were used to study the crystallization process of Ni80 57Fe1P19 amorphous alloys kept in melt at different temperatures before quenching. Samples were heated up to 430°C and 720°C at a rate of 20°C/min, in order to reach characteristically different stages of crystallization. Even at the same crystallization, stage the room temperature Mössbauer spectra and the X-ray differactograms were different depending on the temperature (1050°C or 1400°C) at which the samples were kept before quenching the melt. The Mössbauer spectra showed a paramagnetic component and two sextets (H=267 kOe and H=245 kOe) at 430°C while at 720°C there was only one sextet (H=267 kOe) besides the paramagnetic component. The changes in the Mössbauer spectra of different samples due to crystallization are consistent with the explanation that phase separation occurs in Ni80 57Fe1P19 rapidly quenched from the melting temperature of 1050°C.  相似文献   

11.
The effect of shearing on crystallization behavior of a crystalline/crystalline blend, polyoxymethylene [POM]/poly(ethylene oxide) [PEO], was investigated using polarized light microscopy connected with a CSS450 shearing hot-stage, scanning electron microscopy, differential scanning calorimetry [DSC], and x-ray diffraction [XRD]. The experimental results indicated that the shearing made POM and PEO disperse more evenly and increased the inclusion and entanglement effects between the molecular chains of POM and PEO and therefore enhanced the influence of PEO on the crystallization of POM. As a result, the blend sheared at a shear rate of 20 s?1 for 10 min at 160°C formed shish–kebab crystals and produced more interlamellar structures compared with the formation of perforated spherulites in the unsheared blend. Moreover, a more obvious shoulder melting peak of POM appeared in the DSC heating trace and a new diffraction peak occurred at 2θ = 31.7° in the XRD pattern for the sheared POM/PEO [50/50] blend.  相似文献   

12.
In this work, amorphous and crystalline TiO2 films were synthesized by the sol–gel process at room temperature. The TiO2 films were doped with gold nanoparticles. The films were spin-coated on glass wafers. The crystalline samples were annealed at 100°C for 30 minutes and sintered at 520°C for 2 h. All films were characterized using X-ray diffraction, transmission electronic microscopy and UV-Vis absorption spectroscopy. Two crystalline phases, anatase and rutile, were formed in the matrix TiO2 and TiO2/Au. An absorption peak was located at 570 nm (amorphous) and 645 nm (anatase). Photoconductivity studies were performed on these films. The experimental data were fitted with straight lines at darkness and under illumination at 515 nm and 645 nm. This indicates an ohmic behavior. Crystalline TiO2/Au films are more photoconductive than the amorphous ones.  相似文献   

13.
Disordered and crystalline Mn-doped BaTiO3 (BTO:Mn) powders were synthesized by the polymeric precursor method. After heat treatment, the nature of visible photoluminescence (PL) at room temperature in amorphous BTO:Mn was discussed, considering results of experimental and theoretical studies. X-ray diffraction (XRD), PL, and UV-vis were used to characterize this material. Rietveld refinement of the BTO:Mn from XRD data was used to built two models, which represent the crystalline BTO:Mn (BTO:Mnc) and disordered BTO:Mn (BTO:Mnd) structures. Theses models were analyzed by the periodic ab initio quantum mechanical calculations using the CRYSTAL98 package within the framework of density functional theory at the B3LYP level. The experimental and theoretical results indicated that PL is related with the degree of disorder in the BTO:Mn powders and also suggests the presence of localized states in the disordered structure.  相似文献   

14.
This paper deals with the study of Fe-W powders, which were prepared by electrolyzing, and their stabilized properties. The synthesized Fe-W powders were studied using X-ray diffraction, thermal analysis, Mössbauer spectroscopy and thermomagnetic measurement. A poor hydrogen absorption occurred. After the heat treatment at 800°C, the amorphous and α-Fe(W) phases were decomposed into prevailing α-Fe with approx. 3 at.% W accompanied by the W(Fe), λ-Fe2W, and Fe2+ in oxide phases.  相似文献   

15.
The aim of this work is to study the mechanism of crystallization in Sb:Te thin films using differential scanning calorimetry (DSC), four-probe resistivity and X-ray diffraction (XRD) measurements.The DSC showed that the Sb70+xTe30−x films with x in the range of −3⩽x⩽3 show one exothermic reaction at 110 °C, whereas the films with x in the range of 3⩽x⩽13 present an additional one at about 70 °C. XRD measurements and Rietveld analysis have shown that the first exothermal peak can be associated to the formation of crystalline Sb and the second to the process of transformation of the Sb and the remaining material into a more stable Sb2nTe3 crystalline phase. Appearance of additional Sb phase decreases the crystallization temperature of Sb70+xTe30−x films.These structural transformations are also observed in the four-probe resistivity measurements: a one-step crystallization process in the Sb70+xTe30−x films with x in the range of −3⩽x⩽3and a two-steps crystallization process in films with x in the range of 3⩽x⩽13.The results of this investigation have shown that the amorphous-to-crystalline phase transformation in eutectic Sb:Te depended on the films composition.  相似文献   

16.
A mixture of elemental Ga and Se with the nominal composition Ga40Se60 was submitted to the Mechanical alloying technique and their structural, thermal and optical properties were followed by X-ray diffraction, differential thermal analysis, photoacoustic spectroscopy, UV-VIS‐NIR absorbance spectroscopy and Raman spectroscopy techniques. After 10 h of milling the X-ray pattern showed monoclinic Ga2Se3 phase nucleation, which is in the nanometric form, and also a minority amorphous phase. The DSC results showed exothermic reactions between 430 and 720 K attributed to amorphous-crystalline phase transition and structural relaxation of Ga2Se3 phase. Based on this a small amount of the as-milled sample was annealed at 723 K. Its XRD pattern showed evidences of grain growth, reduction of the interfacial component, as well as, disappearance of the amorphous phase. The annealing process induced thermal diffusivity increasing, while the optical band gap energy and Raman profile remained practically unchanged.  相似文献   

17.
CO2-induced crystallization of isotactic polypropylene (iPP) by annealing had been studied using differential scanning calorimetry (DSC), wide-angle X-ray diffraction (WAXD) and small-angle X-ray scattering (SAXS). The iPP before annealed was in α-form and amorphous states. At lower temperatures by CO2 isothermal treatments, iPP chains crystallized from the amorphous phase and only one crystal form, i.e., α-form, was observed. At higher temperatures by CO2 isothermal treatments, both crystallization from the amorphous phase and thickening of existing crystal lamellae were observed. Moreover, light γ-form crystal appeared in the treated iPP. The crystalline lamellar thickness of iPP annealed at different CO2 pressures had been determined. Using the Gibbs–Thomson plot method, the equilibrium melting temperature was found to be 187.6°C.  相似文献   

18.
The crystallization kinetics of amorphous silicon carbide films was studied by means of X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The films were deposited by radio frequency (r.f.) magnetron sputtering on glassy carbon and single crystalline silicon substrates, respectively. TEM micrographs and XRD patterns show the formation of nano-crystalline β-SiC with crystallite sizes in the order of 50 nm during annealing at temperatures between 1200 and 1600 °C. A modified Johnson-Mehl-Avrami-Kolmogorov (JMAK) formalism was used to describe the isothermal transformation of amorphous SiC into β-SiC as an interface controlled, three-dimensional growth processes from pre-existing small crystallites in the order of 10 nm. These pre-existing crystallites are formed in a transient process in the early stages of crystallization. For films deposited on the silicon substrate, the obtained rate constants of crystallite growth obey an Arrhenius behavior with an activation enthalpy of 4.1 ± 0.5 eV in accordance with literature data. Films deposited on glassy carbon show an increased stability of amorphous SiC films, which is reflected in smaller rate constants of crystallite growth of several orders of magnitude at low temperatures and a higher activation enthalpy of 8.9 ± 0.9 eV. A model is proposed, where the faster crystallization of films on silicon substrates can be explained with the presence of superabundant point defects, which diffuse from the substrate into the film and accelerate the incorporation of atoms from the amorphous into the crystalline phase.  相似文献   

19.
Differential scanning calorimetry (DSC) technique was used to study the kinetics of amorphous to crystalline transformation in Pb4.3Se95.7 chalcogenide glass. Non-isothermal measurements were performed at different heating rates (5-60 K/min). The activation energy of crystallization was determined by analyzing the data using Matusita et al. method. A strong heating rate dependence of the activation energy was observed. The isoconversional methods of Kissinger-Akahira-Sunose (KAS) and Vyazovkin confirm that the activation energy of crystallization is not constant but varies with the degree of crystallization and hence with temperature. This variation indicates that the transformation from amorphous to crystalline phase in Pb4.3Se95.7 is a complex process involving different mechanisms of nucleation and growth.  相似文献   

20.
This work describes a novel synthesis for the production of very pure nanocrystalline hexagonal nickel sulfide phase (h-NiS) by the solventless route in air at temperatures of only 190 °C. Only the cubic NiS2 nickel sulfide phase is obtained when the sulfur source reacting with the nickel acetate powder (NiAc) is switched from thiourea (TU) to elemental sulfur (SN). When using both TU and SN sulfur sources, phase mixture of h-NiS, NiS2 and Ni3S4 with less aggregated particles was obtained. Relative concentrations of the phases were quantified by the Rietveld refinement of the XRD powder patterns. The thermal evolution of stoichiometric reagents mixture was observed by TG-FTIR and DSC curves.  相似文献   

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