A novel Urushi matrix chloride ion-selective field effect transistor

A durable chloride ion-selective field effect transistor (ISFET) is proposed with Urushi as the membrane matrix. The chloride ion-sensing material is a quaternary ammonium chloride: trioctylmethylammonium chloride (TOMA-Cl) or tridodecylmethylammonium chloride (TDMA-Cl). The optimum composition of the Urushi membrane was found by use of Urushi ion-selective electrodes. The mixture with the most favourable composition was coated on the gate region of the FET device. The Urushi ISFET with TDMA-Cl proved to be superior to that with TOMA-Cl, in sensitivity, linearity and selectivity. The Urushi ISFET with TDMA-Cl showed a linear response of about -51 mV per decade change of chloride ion activity in the range 10(-4)-1M. The Urushi ISFET showed excellent stability and durability for over two months, because of strong adhesion of the membrane to the Si(3)N(4) gate.     

Analysis of dopamine and tyrosinase activity on ion-sensitive field-effect transistor (ISFET) devices

Dopamine (1) and tyrosinase (TR) activities were analyzed by using chemically modified ion-sensitive field-effect transistor (ISFET) devices. In one configuration, a phenylboronic acid functionalized ISFET was used to analyze 1 or TR. The formation of the boronate-1 complex on the surface of the gate altered the electrical potential associated with the gate, and thus enabled 1 to be analyzed with a detection limit of 7x10(-5) M. Similarly, the TR-induced formation of 1, and its association with the boronic acid ligand allowed a quantitative assay of TR to be performed. In another configuration, the surface of the ISFET gate was modified with tyramine or 1 to form functional surfaces for analyzing TR activities. The TR-induced oxidation of the tyramine- or 1-functionalized ISFETs resulted in the formation of the redox-active dopaquinone units. The control of the gate potential by the redox-active dopaquinone units allowed a quantitative assay of TR to be performed. The dopaquinone-functionalized ISFETs could be regenerated to give the 1-modified sensing devices by treatment with ascorbic acid.     

Detection of Explosives Using Field‐Effect Transistors

The gate surfaces of ion‐sensitive field‐effect transistor (ISFET) devices were functionalized with the π‐donor units, 6‐hydroxydopamine ( 1 ) or 4‐aminothiophenol ( 2 ). Concentration of trinitrotoluene, TNT, on the gate via π‐donor‐acceptor interactions yields charge‐transfer complexes that alter the gate potential. This enables the label‐free analysis of TNT with a detection limit corresponding to 1×10^?7 M.     

Development of an EnFET for the detection of organophosphorous and carbamate insecticides

A biosensor for the detection of insecticides based on an ion-sensitive field-effect transistor (ISFET) was developed. The resulting device combines the simplicity of potentiometric sensors and the use of associated electronic systems as powerful tools for the acquisition and the processing of data. The enzyme acetylcholinesterase (AChE) was entrapped in a membrane placed on the gate of the ISFET forming an enzyme field-effect transistor (EnFET). The biosensor is applied to the determination of pesticides in spiked real samples. Organophosphorous and carbamate insecticides were measured with a detection limit of 10(-8) mol L(-1). The measurement is based on the production of hydrogen ions due to the hydrolysis of acetylthiocholine by the enzyme. The resulting local pH change is picked up by the underlying pH-sensitive ISFET and transduced as potential variations. The preparation of the membrane is simple and reproducible. The analysis in spiked real samples was performed in tap water and showed detection limits comparable to those obtained by other researchers.     

Potassium Ion-Selective Field-Effect Transistor (ISFET) Sensors: Studies on Gate Dimensions and Ion-Implantation Levels

Abstract

Silicon nitride membrane ISFET sensor chips have been produced with varying gate dimensions. A series of width/length (W/L) aspect ratios have been examined, combined with three levels of boron ion-implant. The level of ion-implantation affects the threshold voltage; this is important as a low threshold voltage allows the use of low noise operating conditions. Gate dimensions are also important factors for they determine the level of drain current for a given gate and drain voltages. A novel design feature, aimed at achieving wide gates, is the use of folded gates as well as having a straight structure. The evaluation of devices with gates covered with poly(vinyl chloride) (PVC)-valinomycin-dioctyl adipate was based on their response to potassium chloride standards when it was shown that there may be a maximum width of gate above which there is no improvement of response. Also, the effect of folding the gate structure is discussed and shown to be tenable, thus permitting greater miniaturisation.     

Label-free and reagentless aptamer-based sensors for small molecules

A label free, reagentless aptasensor for adenosine is developed on an ISFET device. The separation of an aptamer/nucleic acid duplex by adenosine leads to the aptamer/adenosine complex that alters the gate potential of the ISFET. The sensitivity limit of the device is 5 x 10-5 M. Also, the immobilization of the aptamer/nucleic acid duplex on an Au-electrode and the separation of the duplex by adenosine mono-phosphate (AMP) enable the electrochemical detection of adenosine by faradaic impedance spectroscopy. The separation of the aptamer/nucleic acid duplex by adenosine and the formation of the aptamer/adenosine complex results in a decrease in the interfacial electron-transfer resistance in the presence of [Fe(CN)6]3-/4- as redox active substrate.     

Enzyme sensors based on an ion-sensitive field effect transistor coated with Langmuir-Blodgett membranes. Use of polyethyleneimine as a spacer for immobilizing alpha-chymotrypsin

A highly branched polyethyleneimine (PEI) was used as a spacer for immobilizing alpha-chymotrypsin on the surface of Langmuir-Blodgett (LB) membranes which were deposited on the gate of an ion-sensitive field effect transistor (ISFET). alpha-Chymotrypsin could be covalently immobilized through the glutaraldehyde-activated PEI on the LB membrane-coated ISFET. The alpha-chymotrypsin-modified ISFET showed a potentiometric response to the substrate at concentrations of more than 0.1 mM. Some performance characteristics of the sensor, such as pH response, response time, and long-term stability were examined.     

New membrane materials for potassium-selective ion-sensitive field-effect transistors

Several polymeric materials were studied as membrane materials for potassium-selective ion-sensitive field-effect transistors (ISFETs) to overcome the problems related with the use of conventional plasticized poly(vinyl chloride) membranes casted on ISFET gate surfaces. Several acrylate materials, such as ACE, Epocryl and derivatives, showed no reproducible results. Three room-temperature vulcanizing (RTV)-type silicone rubbers were tested. The addition-type RTV-2 silicone rubber was not suitable as a membrane material, but the condensation-type RTV-1 and especially the RTV-2 silicone rubber showed good results. ISFETs with a Silopren membrane showed a durability of at least 2 months.     

Alcohol-FET sensor based on a complex cell membrane enzyme system

An alcohol -FET sensor was developed by use of a complex enzyme system in a cell membrane and an ion-sensitive field effect transistor (ISFET). The cell membrane of Gluconobacter suboxydans IFO 12528, which converts ethanol to acetic acid, was immobilized on the gate of an ISFET with calcium alginate gel coated with nitrocellulose. This ISFET (1), a reference ISFET without the cell membrane (ISFET 2) and an Ag/AgCl reference electrode were placed in 5 mM Trismalate buffer (pH 5.5, 25°C), and the differential output between ISFETS 1 and 2 was measured. The output of the sensor was stabilized by adding pyrroloquinoline quinone. The response time was ca. 10 min., and there was a linear relationship between the differential output voltage and the ethanol concentration up to 20 mg l^?1. The output of the sensor was stable for 40 h below 30°C. The sensor responded to ethanol, propan- 1-ol and butan- 1-ol, but not to methanol, propan-2-ol and butan-2-ol. The sensor was used to determine blood ethanol.     

Potentiometric response of lipid modified ISFET

The gate surface of an ion-sensitive field effect transistor (ISFET) was modified with Langmuir-Blodgett (LB) film composed of fatty acid or crown ether amphiphiles to examine their potentiometric response to H⁺ and K⁺ ions. The results demonstrate the possible use of the lipid films for preparing ISFET ion sensors.     

Acetylcholine Sensor Based on Ion Sensitive Field Effect Transistor and Acetylcholine Receptor

Abstract

A new type of acetylcholine sensor was made with an Ion Sensitive Field Effect Transistor (ISFET) and acetylcholine receptor. The acetylcholine receptor was fixed on a polyvinylbutyral membrane which covered the ISFET gate. When acetylcholine was injected into this system, the differential gate output voltage gradually Shifted to the positive side and reached a constant value. This response was due to the positive charge of acetylcholine. A linear relationship was obtained between the initial rate of the differential gate output voltage change and the logarithmic value of the acetylcholine concentration. Acetylcholine was fixed in the range 0.1-10μM. When the acetylcholine receptor was immobilized with the lipid membrane, the response was amplified with both the positive charge of acetylcholine and sodium ion flux through the acetylcholine receptor's channel. Therefore, the difference in the differential voltage between the acetylcholine receptor-ISFET systems with and without the lipid membrane was caused by sodium ion flux through the acetylcholine receptor's channel.     

Reference field effect transistors based on chemically modified ISFETs

Different hydrophobic polymers were used for chemical modification of ion-sensitive field effect transistors (ISFETs) in order to prepare a reference FET (REFET). Chemical attachment of the polymer to the ISFET gate results in a long lifetime of the device. Properties of polyacrylate (polyACE) REFETs are described in detail. The polyACE-REFET is superior to other polymer modified REFETs, showing an excellent pH insensitivity (?1 mV pH^?1), a long lifetime and an electrically identical behaviour as an unmodified pH ISFET or a cation-selective PVC-MEMFET (membrane FET). The cation permeselectivity of the polymer can be significantly reduced by addition of immobile cations. The applicability of a polyACE-REFET in differential measurements with a pH ISFET and a K⁺ MEMFET is demonstrated.     

Photolithographically patterned enzyme membranes for the detection of pesticides and copper(II) based on enzyme inhibition

Summary A non-aqueous and an aqueous photopolymer system with an enzyme are used to prepare photolithographically patterned enzyme membranes for amperometric (thinfilm platinum electrode) and potentiometric (ISFET) sensors based on enzyme inhibition. Flow methods for enzyme inhibition tests are described. The decrease in enzyme (AChE) activity after incubation in a solution of dichlorvos as inhibitor is detected amperometrically. The enzyme urease is immobilized onto the pH-sensitive gate area of an ISFET. Such a biosensor is able to detect copper-(II) in water in the ppm-range without preconcentration.Dedicated to Professor Dr. Wilhelm Fresenius on the occasion of his 80th birthday     

Selective sensing of triazine herbicides in imprinted membranes using ion-sensitive field-effect transistors and microgravimetric quartz crystal microbalance measurements

A series of triazine herbicides consisting of the chlorotriazine atranex (atrazine), (1), prozinex, (2), tyllanex, (3), simanex, (4) and the methylthiolated triazines ametrex, (5), prometrex, (6) and terbutex, (7), were imprinted in an acrylamide-methacrylate copolymer. The polymer was deposited on the gate surface of ion-sensitive field-effect transistors (ISFETs) and piezoelectric Au-quartz crystals. Selective sensing of the imprinted substrates was accomplished by the imprinted polymer membrane associated with the ISFETs and Au-quartz crystals. Binding of the substrates onto the imprinted polymer associated with the gate of the ISFET alters the electrical charge and potential of the gate interface, thus allowing the potentiometric transduction of the binding events. The association of the substrates with the imprinted membrane linked to the Au-quartz crystal results in the membrane swelling, thus enabling the microgravimetric quartz crystal microbalance assay of the substrate binding events. The specificity of the imprinted recognition sites is attributed to complementary H-bond and electrostatic interactions between the substrates and the acrylamide-methacrylic acid copolymer.     

Potassium ion-sensitive field effect transistors using valinomycin doped photoresist membrane

Conclusion The potassium ion-sensitive membrane, prepared by the inclusion of valinomycin and plasticizer into the photoresist proved to be a good potassium ion-sensitive membrane for the ISFET. The plasticizer was found to play an important role in the photoresist membrane to obtain potassium ion-sensitivity. The plasticizer photoresist membrane showed not only more sensitivity but also longer term stability than the plasticized PVC membrane. It is concluded that the plasticized photoresist membrane deposited at the gate region of the ISFET works satisfactory for the determination of potassium ion activity in aqueous solution.

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Kalium-ionensensitive Feldeffekt-Transistoren mit Valinomycin-dotierten photoresistenten Membranen

     

Enzyme-based field-effect transistor for adenosine triphosphate (ATP) sensing.

Adenosine triphosphate (ATP) not only functions as an energy-carrier substance and an informative molecule, but also acts as a marker substance in studies of both bio-traces and cellular/tissular viability. Due to the importance of the ATP function for living organisms, in situ assays of ATP are in demand in various fields, e.g., hygiene. In the present study, we developed an ATP sensor that combines the selective catalytic activity of enzyme and the properties of an ion selective field effect transistor (ISFET). In this system, the ATP hydrolyrase, "apyrase (EC 3.6.1.5.)" is encased in a gel and mounted on a Ta(2)O(5) ISFET gate surface. When the enzyme layer selectively catalyzes the dephosphorylation of ATP, protons are accumulated at the gate because the enzymatic reaction produces H(+) as a byproduct. Based on the interfacial enzymatic reaction, the response from the ISFET is completely dependent upon the ATP concentration in the bulk solution. This device is readily applicable to practical in situ ATP measurement, e.g. hygienic usage.     

Micro Ammonia Sensor

Abstract

A micro ammonia sensor, consisting of an ISFET covered with a dry membrane which is made from nonactin and substituted poly-γ-methyl-L-glutamate (PMG) is described. The gate output voltage of the micro ammonia sensor increased with NH₄OH addition. The response time of the sensor was 2 min at 30°C, and the sensor exhibited superior selectivity for NH₄ ⁺ compared to a pH sensitive ISFET.     

Integration of MOSFET/MIM Structures Using a CMOS-Based Technology for pH Detection Applications with High-Sensitivity

In this work, we show that by using Metal-Insulator-Metal (MIM) structures integrated in series to the gate of submicron Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) devices, highly-sensitive and ultra-low power consumption pH sensors can be obtained. One MIM capacitor enables external polarization of the MOSFET device while a second MIM capacitor is connected to a sensing plate whose surface is whether a thick polyimide layer or the last metallization level. The electrochemical response of these surfaces to pH buffer solutions resembles that of Ion-Sensitive Field-Effect Transistor (ISFET) devices whose pH sensitivity is dependent on the type of surface material being exposed.     

Grafting of phosphonate groups on the silica surface for the elaboration of ion-sensitive field-effect transistors

Ion-sensitive field-effect transistors (ISFETs) sensitive to Ca(2+) ions could be elaborated by means of a new grafting process of the phosphonate group at the surface of the silica gate of FETs. A grafting process involving only one chemical reaction step at the surface afforded a significant improvement of the ISFET properties. The sensitivity of the ISFET towards Ca(2+) ions at pH 10 was quasi-linear in the concentration range from 10(-1) to 10(-3) M, and the slope was 10 mV pCa(-1). The site-binding model works well in predicting the experimental data, giving the complexation constant of 10(2.7) and a low value of the grafting density. The origin of the poor response of ISFETs sensitized by means of a multistep grafting process was investigated on silica powders of high specific area: the cleavage of the organic grafts at the SiOSi bonds occurring at each step could be disclosed by means of elemental analyses, infrared, and cross-polarization and magic angle spinning nuclear magnetic resonance of the grafts.