CeCu2Si2和UBe13的超导理论(Ⅱ)——热力学量的计算

根据文献[1]中给出的模型和能隙方程,计算了超导态的热力学临界磁场,T_c处的比热跃变以及T_c以下的比热行为。结果表明:有关热力学量的临界值与实验结果定性相符;T_c以下的比热行为在整个温区与CeCu₂Si₂和UBe₁₃的实验结果符合。 关键词：     

CeCu2Si2和UBe13的超导理论(Ⅰ) ——模型,Tc及序参量

本文从周期性的Anderson晶格模型出发,考虑到局域电子与局域晶格形变的作用,对CeCu₂Si₂和UBe₁₃的重费密子超导现象进行了理论研究。通过计算,得到了合理的超导转变温度T_c;给出了描述同位素效应大小的参数α<1/2,甚至等于零(在BCS理论中α=1/2),说明现在的理论给出的同位素效应比BCS理论小,甚至可以不存在同位素效应,这与重费密子超导的实验相符合;此外还给出了序参量随温度及态密度变化的关系曲线,由此可 关键词：     

NO与C2H2的康普顿轮廓研究

基于第三代同步辐射光源, 在20 keV的入射X射线能量下测量了NO与C₂H₂分子的康普顿轮廓. 考虑到本次实验结果在p_z ≈ 0附近的统计精度达到了0.2%, 本文报道的NO和C₂H₂的康普顿轮廓可以作为严格检验理论的实验基准. 除此之外, 还分别采用HF方法及密度泛函方法选用不同的基组计算了NO 与C₂H₂康普顿轮廓. 通过对比实验结果与理论计算, 发现对于NO分子, 加入弥散函数基组理论计算结果与实验符合更好, 说明NO分子基态的电子分布较为弥散. 对于C₂H₂分子, HF方法理论计算的结果与实验符合较好.     

2H-Nb0.9Ta0.1Se2中磁通涡旋输运的标度行为

测量了2H-Nb_0.9Ta_0.1Se₂单晶样品在不同电流下电压随磁场变化的曲线V(H),并从V(H)曲线得到V(I)数据.使用标度关系V=α(I-I_c)^β进行了拟合,得到了临界电流随磁场I_c(H)和微分电阻随磁场R_d的变化关系.在微分电阻随磁场变化的曲线中,电流较大时,靠近上临界磁场H_c2附近出现一个强峰,而在低电流下,该峰消失.同 关键词： 磁通涡旋 标度定律 临界电流峰效应     

一级磁结构相变材料Mn0.6Fe0.4NiSi0.5Ge0.5和Ni50Mn34Co2Sn14的磁热效应与磁场的线性相关性

磁熵变（△S_M）与磁场（μ₀H）的相关性已在很多二级相变材料中被研究并报道,但一级相变材料的磁热效应与磁场相关性还少有报道.本文在具有一级磁结构相变的Mn_0.6Fe_0.4NiSi_0.5Ge_0.5材料中研究发现△S_M与μ₀H存在线性相关性,并通过麦克斯韦关系式的数值分析详细讨论了这一线性相关性的来源.同时,进一步发现在低磁场时,△S_M近似正比于μ₀H的平方.该线性相关性同样在一级磁结构相变Ni₅₀Mn₃₄Co₂Sn₁₄材料中得到了印证.但由于一级磁弹相变LaFe_11.7Si_1.3材料相变温度具有更强的磁场依赖性,不具有△S_M的线性相关性,因此,本研究表明,当磁结构相变材料的相变温度具有弱磁场依赖性时,△S_M与μ₀H具有线性相关性.进而,在磁场未达到相变饱和磁场以下,利用△S_M与μ₀H的线性相关性可以有效推测更高磁场下的△S_M.     

用两带Ginzburg-Landau理论分析两带超导体Lu2Fe3Si5的表面临界磁场

用两带Ginzburg-Landau(GL)理论分析了Lu₂Fe₃Si₅的表面临界磁场,当超导体的表面与任一主晶面重合,且外磁场平行于超导体的表面时,比值H_c3/H_c2(H_C2是Lu₂Fe₃Si₅的上临界磁场)强烈依赖于温度. 当超导体的表面是bc平面,且 关键词： 两带超导体 GL理论 2Fe₃Si₅')" href="#">Lu₂Fe₃Si₅ 表面临界磁场     

La2/3Ca1/3Mn1-xCuxO3(x=0.15)系统低温下的电阻极小值现象及其起因

实验研究了La_2/3Ca_1/3Mn_1-xCu_xO₃(x=0和0.15)样品在温度远低于居里温度时的电阻随温度的变化行为.发现未加磁场时,Cu掺杂样品在低温下表现出电阻极小值行为.这一极小值现象在外加磁场后消失.基于Kondo理论,对实验观察进行了讨论,并作了定量的理论与实验的比较. 关键词：     

O2/CO2气氛下循环流化床煤燃烧SO2排放

在热输入功率50 kW的循环流化床O₂/CO₂燃烧试验装置上研究燃煤SO₂排放特性及石灰石脱硫机理。结果发现,未添加石灰石时,O₂/CO₂气氛下SO₂排放量比相同O₂浓度的空气气氛下低;随着O₂浓度的升高,排放量升高。相同钙硫摩尔比下,O₂/CO₂气氛下石灰石的脱硫机理以直接脱硫为主,脱硫效率比空气气氛下高;随着O₂浓度的增加,石灰石脱硫效率提高。     

群表示论的物理方法(Ⅴ)——SU3?SO3和SU4?SU2×SU2分类基

本文给出了核物理中常用的SU₃?SO₃(f=1—6)和SU₄?SU₂×SU₂波函数在Gelfand表象中的展开系数。 关键词：     

Y0.9Eu0.1Ba2Cu3O7-δ中的磁通蠕动研究

在较宽的温度（４．２－８０Ｋ）和磁场（０－８Ｔ）范围内测量了ＹＢａ₂Ｃｕ₃Ｏ_7-δ和Ｙ_0.9Ｅｕ_0.1Ｂａ₂·Ｃｕ₃Ｏ_7-δ样品的磁滞回线和磁弛豫，研究了其Ｍ（ｔ），Ｊ_c（Ｔ）和Ｕ_eff（Ｊ）关系，并与现有的一些理论模型所预言的结果进行了比较。结果表明：（１）与ＹＢａ₂Ｃｕ₃Ｏ_7-δ相比，Ｙ_0.9Ｅｕ_0.1·Ｂａ₂Ｃｕ₃Ｏ_7-δ样品的有效钉扎势和无磁通蠕动时的临界电流密度有明显提高，表明Ｅｕ的部分替代引入了新的、具有更大的钉扎势的钉扎中心；（２）与其它模型相比，集体钉扎——蠕动理论对我们的实验结果作了更好的描述，因而本文为这一理论提供了新的实验证据。 关键词：     

Gd2CuO4的远红外反铁磁共振理论

提出一个适用于奈耳温度6.4K以下,Gd₂CuO₄的远红外反铁磁共振理论.理论预言的结果与Kaplan等的实验符合. 关键词：     

YBa2Cu3O7-δ熔融织构样品的磁响应研究

对YBa₂Cu₃O_7-δ熔融织构样品在不同温度、不同磁场不同外场扫描速率下进行了磁滞回线测量,获得了电流密度J(T,B),lnE-lnJ曲线以及热激活能U₀(T,B)随温度、磁场的变化关系,从而分析了该样品磁响应特性,特别是第二峰(简称峰)受外场扫描速率的影响,探讨了峰形成的真正原因,以及影响峰位置、大小的各种因素 关键词： 磁响应 熔融织构 峰效应 临界电流密度     

Material characterization of superconducting T′-Nd2CuO4 films synthesized by metal organic decomposition

Recently we have achieved superconductivity in T′-RE₂CuO₄ (RE = Pr, Nd, Sm, Eu, and Gd), films by metal organic decomposition (MOD). In this article, we first report the cation off-stoichiometry effect, which aims at screening out the possibility of hole doping by cation deficiencies. We also investigated the structure and microstructure of superconducting T′-Nd₂CuO₄ films synthesized by MOD. This investigation aims at elucidating why MOD-grown Nd₂CuO₄ films become superconducting whereas our previous Nd₂CuO₄ films grown by molecular beam epitaxy were not superconducting.     

Optical properties of new photovoltaic materials: AgCuO2 and Ag2Cu2O3

AgCuO₂ and Ag₂Cu₂O₃ are new types of semiconductor materials. A theoretical study is presented for both the electronic and optical properties of these new photovoltaic materials in the framework of density functional theory (DFT). The calculated cohesive energy is −3.606 eV/atom and −3.723 eV/atom for Ag₂Cu₂O₃ and AgCuO₂, respectively. Electronic calculations indicate that AgCuO₂ is a small band gap semiconductor and Ag₂Cu₂O₃ is metallic in nature. The valency state of Cu is divalent in Ag₂Cu₂O₃ and trivalent in AgCuO₂. The largest absorption coefficient of CuO₂ is 332 244, which is significantly greater than that of CuInSe₂, CdTe, GaAs, etc.     

在H2气氛中Bi2Sr2CaCu2O8+δ的热处理效应

对高品质单相多晶Bi₂Sr₂CaCu₂O_8+δ样品作真空或H₂气氛中不同温度下的热处理。由X射线结构分析,其正常态和超导态性质(特别是载流子浓度)的系统测量结果表明:Bi₂Sr₂CaCu₂0_8+δ样品在H₂气氛中热处理,其氧的释放可分为两个阶段:一是Bi-O层之间的过量氧原子的逸出,降低系统的载流子浓度,从而调节T_c;二是CuO₂面内氧原子的迁移,产生氧空位,使CuO₂面内Cu²⁺的短程二维反铁磁(2D-AFM)有序背景遭到破坏。可以认为:以往文献中报道的Bi₂Sr₂CaCu₂O_8+δ超导体的吸氢效应导致T_c的变化,很可能主要的并不是氢原子的电子掺杂行为,而是与吸氢过程中氧含量的变化相联系。 关键词：     

Influence of the doping level on the charge distribution among the inequivalent CuO2 layers in Tl2Ba2Ca2Cu3O10−δ : a NMR study

and NMR measurements in the normal and superconducting states of Tl₂Ba₂Ca₂Cu₃O_10−δ with different δ are reported. In the overdoped Tl2223 sample with T_c=117 K (T_c^opt=123 K) and δ₁<δ^opt different temperature dependencies of the Knight shift are revealed for inequivalent CuO₂ layers. For the inner CuO₂ layer with the square oxygen coordination of Cu the decrease of with temperature is more gradual. In going towards the underdoped Tl2223 with T_c=104 K and δ₂>δ^opt the changes of with temperature are found to be the same for both types of copper layers. The quadrupole coupling constants for copper and oxygen from different CuO₂ layers were obtained. From the variations with doping of the valence contribution to the electric field gradient at copper sites, we estimate both the hole numbers at Cu and oxygen sites and the real concentration of mobile hole carriers n_h in each of inequivalent CuO₂ layers. In the overdoped Tl2223 sample the charge density in the inner layer differs from the one in the outer plane (with five-fold oxygen coordination for Cu). Our results show that the inhomogeneity of the charge distribution disappears in the underdoped regime. The results are compared with calculations of the charge distribution among the CuO₂ planes in multilayered cuprates reported by Haines and Tallon [E.M. Haines, J.L. Tallon, Phys. Rev. B 45 (1992) 3127].     

WEAK FERROMAGNETIC PROPERTIES OF Eu1.85Ca0.15CuO4

A weak ferromagnetic transition has been observed for the T'-type compound Eu_1.85Ca_0.15CuO₄. The samples were prepared by a high pressure (5 GPa) synthesis technique. Their transition temperature occurred at 27 K. At 5 K the residual magnetization was 0.033 emu/g, the coercive force was 6.3×10⁴ A/m and the saturation field was larger than 1.6×10⁵ A/m. A field cooling method is proposed as a very convenient way to determine the residual magnetization and coercive force. The compound Eu_1.85Ca_0.15CuO₄ is suggested to use as a sensor to measure the remanant field of SQUID magnetometer.     

Mechanisms of the pancake vortex and vortex line movement in the high Tc superconductors Bi2Sr2CaCu2O8 δand La1.93Sr0.07CuO4 δ

In the strict sense, it is not very clear why with magnetic field increasing, the normal-superconductive (NS) transition becomes broad for Bi2Sr2CaCu2O8 δ(Bi2212) while the NS transitions are almost parallel for La1.93Sr0.07CuO4 δ(La214). In this paper, R-T relations are measured by the six-probe method. We propose a moving mechanism of the pancake vortex and vortex line for Bi2212. The theoretical curves fit the experiment data well.     

Effects of excess oxygen content on the hole-carrying CuO2-layers in Tl2(Ba1−xSrx)2Ca2Cu3Oy superconducting oxides

The effects of oxygen doping on the hole-carrying CuO₂-layers in Tl₂(Ba_1−xSr_x)₂Ca₂Cu₃O_y were studied by combined chemical and valence analysis, T_c measurements and neutron diffraction. The highest T_c is characterized by an optimal excess oxygen content, Δy, dichotomizing the under- and over-doped regions for each Sr concentration. While the average Tl valence is close to 3.0 and independent of Δy, the average Cu valence shows a linear dependence with Δy. An increase of the flatness of the CuO₂ plane, characterized by the O(2)-Cu(2)-O(2) bond angle of ∼176°, was observed at the optimal Δy.     

YBa2Cu3O7超导管内磁场与外磁场的关系

本文报道了当外磁场H_e较低时(H_e<4H_rm,其中H_rm是超导管的最大捕获磁场),超导管的内磁场H_i与时间及外磁场的关系可表示为H₀+B₀(lnt+1-exp(-t/τ)),式中B₀Int与磁通蠕动有关,B_c(1-exp(-t/τ))与外磁场引起的磁通扰动有关。扰动随时间很快衰减.H₀,B₀及1/τ随外磁场增加,在H_e>H_rm时,这几个量增加较大。当直流外磁场H_e<1/2H_rm时,超导管可将其完全屏蔽,对交流场不能完全屏蔽,但其屏蔽效果仍优于最好的金属屏蔽筒。 关键词：