Universal arrhenius temperature activated charge transport in diodes from disordered organic semiconductors

Charge transport models developed for disordered organic semiconductors predict a non-Arrhenius temperature dependence ln(mu) proportional, variant1/T(2) for the mobility mu. We demonstrate that in space-charge limited diodes the hole mobility (micro(h)) of a large variety of organic semiconductors shows a universal Arrhenius temperature dependence micro(h)(T) = micro(0)exp(-Delta/kT) at low fields, due to the presence of extrinsic carriers from the Ohmic contact. The transport in a range of organic semiconductors, with a variation in room temperature mobility of more than 6 orders of magnitude, is characterized by a universal mobility micro(0) of 30-40 cm(2)/V s. As a result, we can predict the full temperature dependence of their charge transport properties with only the mobility at one temperature known.     

Effect of strain on the carrier mobility in heavily doped p-type Si

We present an experiment that gives insight into the origin of the dependence of the hole mobility (mu) on the dopant species in heavily doped p-type Si under low electrical field. The Hall carrier concentration and mobility were measured in Si coimplanted with B and Ga in the 0.1-2 x 10{20} cm{-3} concentration range. The strain induced by substitutional dopants, detected by high resolution x-ray diffraction, was varied by changing the relative B and Ga concentration. The effect of strain on mobility was disentangled and a linear relationship between 1/mu and the perpendicular strain was found.     

Effect of substrate temperature on the growth and properties of boron-doped microcrystalline silicon films

Highly conductive boron-doped hydrogenated microcrystalline silicon (\mu c-Si:H) films are prepared by very high frequency plasma enhanced chemical vapour deposition (VHF PECVD) at the substrate temperatures $T_{\rm S})$ ranging from 90$^\circ$C to 270$^\circ$C. The effects of $T_{\rm S}$ on the growth and properties of the films are investigated. Results indicate that the growth rate, the electrical (dark conductivity, carrier concentration and Hall mobility) and structural (crystallinity and grain size) properties are all strongly dependent on $T_{\rm S}$. As $T_{\rm S}$ increases, it is observed that 1) the growth rate initially increases and then arrives at a maximum value of 13.3 nm/min at $T_{\rm S}$=210$^\circ$C, 2) the crystalline volume fraction ($X_{\rm c})$ and the grain size increase initially, then reach their maximum values at $T_{\rm S}$=140$^\circ$C, and finally decrease, 3) the dark conductivity ($\sigma _{\rm d})$, carrier concentration and Hall mobility have a similar dependence on $T_{\rm S}$ and arrive at their maximum values at $T_{\rm S}$=190$^\circ$C. In addition, it is also observed that at a lower substrate temperature $T_{\rm S}$, a higher dopant concentration is required in order to obtain a maximum $\sigma _{\rm d}$.     

Infrared hall effect in high- T(c) superconductors: evidence for non-fermi-liquid hall scattering

Infrared ( 20-120 and 900-1100 cm(-1)) Faraday rotation and circular dichroism are measured in high- T(c) superconductors using sensitive polarization modulation techniques. Optimally doped YBa2Cu3O7 thin films are studied at temperatures in the range ( 15相似文献   

Sharp signature of a dx2-y2 quantum critical point in the Hall coefficient of cuprate superconductors

We study the behavior of the Hall coefficient, R(H), in a system exhibiting dx(2)(-y(2)) density-wave order in a regime in which the carrier concentration, x, is tuned to approach a quantum critical point at which the order is destroyed. At the mean-field level, we find that n(Hall)=1/R(H) evinces a sharp signature of the transition. There is a kink in n(Hall) at the critical value of the carrier concentration, x(c); as the critical point is approached from the ordered side, the slope of n(Hall) diverges. Hall transport experiments in the cuprates, at high magnetic fields sufficient to destroy superconductivity, should reveal this effect.     

透明导电铟铋氧化物薄膜的制备及其性能

以氧化铟为主体材料,以铋为掺杂材料,采用真空热蒸发方法研制出2.5%铋掺杂的透明导电氧化物薄膜(IBO)。实验表明:IBO薄膜具有良好的表面形貌,载流子浓度为3.955×1019cm-3,载流子迁移率达到50.21cm2·V-1·s-1,电导率为3.143×10-3Ω·cm,在可见光范围内的平均透过率超过82%,功函数为4.76eV。采用其作为阳极制作的OLED得到最大亮度30230cd/m2,最大电流效率为5.1cd/A。结果表明IBO是一种良好的光电器件阳极材料。     

Measurements of the cross section for e(+)e(-) --> hadrons at center-of-mass energies from 2 to 5 GeV

We report values of R = sigma(e(+)e(-)-->hadrons)/sigma(e(+)e(-)-->mu(+)mu(-)) for 85 center-of-mass energies between 2 and 5 GeV measured with the upgraded Beijing Spectrometer at the Beijing Electron-Positron Collider.     

Anisotropic properties and conduction mechanism of TlInSe2 chain semiconductor

TlInSe₂ chain crystals were prepared using the modification of the Bridgman technique. The grown crystals were identified by scanning electron microscopy (SEM), energy dispersive spectroscopy (EDX), and X-ray diffraction (XRD). We investigate the anisotropy of transport properties for the first time for TlInSe₂ crystals. Temperature dependence of the dc electrical conductivity, Hall coefficient, Hall mobility, and charge carrier concentration were investigated in the temperature range 184–455 K. The conduction mechanism of TlInSe₂ crystals was studied, and measurements revealed that the dc behavior of the grown crystals can be described by Mott’s variable range hopping (VRH) model in the low temperature range, while it is due to thermoionic emission of charge carriers over the chain boundaries above 369 K. The Mott temperature, the density of states at the Fermi level, and the average hopping distance are estimated in the two crystallographic directions. The temperature dependence of the ac conductivity and the frequency exponent, s, is reasonably well interpreted in terms of the correlated barrier-hopping CBH model.     

Intrinsic charge transport on the surface of organic semiconductors

The air-gap field-effect technique enabled realization of the intrinsic (not limited by static disorder) polaronic transport on the surface of rubrene (C42H28) crystals over a wide temperature range. The signatures of this intrinsic transport are the anisotropy of the carrier mobility, mu, and the growth of mu with cooling. Anisotropy of mu vanishes in the activation regime at low temperatures, where the transport is dominated by shallow traps. The deep traps, introduced by x-ray radiation, increase the field-effect threshold without affecting mu, an indication that the filled traps do not scatter polarons.     

Search for the lepton family number violating process nu(mu)e(-) --> mu(-)nu(e)

The NuTeV experiment at Fermilab has used a sign-selected neutrino beam to perform a search for the lepton number violating process nu(mu)e(-)-->mu(-)nu(e), and to measure the cross section of the standard model inverse muon decay process nu(mu)e(-)-->mu(-)nu(e). NuTeV measures the inverse muon decay asymptotic cross-section slope sigma/E to be (13.8 +/- 1.2 +/- 1.4) x 10(-42) cm(2)/GeV. The experiment also observes no evidence for lepton number violation and places one of the most restrictive limits on the cross-section ratio sigma(nu(mu)e(-)-->mu(-)nu(e))/sigma(nu(mu)e(-)-->mu(-)nu(e)) < or = 1.7% at 90% C.L. for V-A couplings and < or = 0.6% for scalar couplings.     

迁移率对单层有机发光器件中电场与载流子分布的影响

有机发光器件的宏观特性与有机层中的电场和载流子浓度分布密切相关。建立的有机电致发光器件模型是由两个金属电极中间夹一层有机发光薄膜材料组成的单层器件,金属与有机发光层之间为欧姆接触。模型以载流子运动的扩散-漂移理论为基础,利用数值方法研究了有机发光层中双极载流子注入时的电势、电场、载流子浓度和复合密度分布。分析结果表明:当两种载流子的迁移率相同时,电场强度、载流子浓度、复合密度的分布呈对称形式。而当电子和空穴的迁移率μn和μp相差比较大时,高迁移率的载流子不仅仅分布在注入端附近而且还有一小部分能够传输到另一端,而低迁移率的载流子只分布在其注入端附近;当μn、μp的大小相差不大时,载流子传输情况就介于两者之间。当μn/μp的比值变化时,电场强度的极大值向载流子迁移率小的注入端偏移。     

Spin Hall effect in doped semiconductor structures

In this Letter we present a microscopic theory of the extrinsic spin Hall effect based on the diagrammatic perturbation theory. Side-jump and skew-scattering contributions are explicitly taken into account to calculate the spin Hall conductivity, and we show that their effects scale as sigma(xy)SJ/sigma(xy)SS approximately (h/tau)/epsilonF, with tau being the transport relaxation time. Motivated by recent experimental work we apply our theory to n- and p-doped 3D and 2D GaAs structures, obtaining sigma(s)/sigma(c) approximately 10(-3)-10(-4), where sigma(s(c)) is the spin Hall (charge) conductivity, which is in reasonable agreement with the recent experimental results of Kato et al. [Science 306, 1910 (2004)] in n-doped 3D GaAs system.     

Superconductor-to-insulator transition and transport properties of underdoped YBa2Cu3O(y) crystals

The carrier-concentration-driven superconductor-to-insulator (SI) transition as well as transport properties in underdoped YBa2Cu3O(y) twinned crystals is studied. The SI transition takes place at y approximately 6.3, carrier concentration n(SI)H approximately 3x10(20) cm(-3), anisotropy rho(c)/rho(ab) approximately 10(3), and the threshold resistivity rho(SI)ab approximately 0.8 mOmega cm which corresponds to a critical sheet resistance h/4e2 approximately 6.5 kOmega per CuO2 bilayer. The evolution of a carrier, nH infiniti y - 6.2, is clearly observed in the underdoped region. The resistivity and Hall coefficient abruptly acquire strong temperature dependence at y approximately 6.5 indicating a radical change in the electronic state.     

Hall effect in the natural glassy carbon of schungites

The temperature dependences (80–500 K) of the Hall coefficient and the resistivity of samples of schungite of types I and III (schungite I and schungite III), as well as a commercial glassy carbon, with carbon contents equal to 98, 30, and 99.99%, respectively, are measured. The character of the dependences of the resistivity and its numerical values are similar to those observed in polycrystalline graphites with a high degree of disorder and in synthetic glassy carbon. Conversely, the Hall coefficient in the schungite samples, as in high-quality single crystals and n-type intercalated compounds of graphite, is found to be negative, small in magnitude, and weakly dependent on the temperature. At room temperature it is equal to 2.83×10⁻²² and 0.305 cm³/C in schungite I and schungite III, respectively, the Hall mobility of the charge carriers in these materials is 8.0 and 9.2 cm²/V·s, and the Hall carrier concentration is 2.2×10²⁰ and 2.0×10¹⁹ cm⁻³. Fiz. Tverd. Tela (St. Petersburg) 39, 1783–1786 (October 1997)     

RbH(X1∑+,v=O～2)能级与H2碰撞振动能量转移

利用积分时间分辨荧光光谱方法,研究了RbH(X1∑+,v=0～2)与H2间的振动碰撞能量转移.在Rb-H2混合样品池中,泵浦激光双光子激发Rb原子至6D态,Rb(6D)与H2反应生成RbH(x1∑+)分子,探测激光延迟泵浦激光20 ns,通过激光感应荧光光谱(LIF)的测量,确定了X1∑+(v=0～2,J)原生态的转动...     

Hall effect in the accumulation layers on the surface of organic semiconductors

We have observed the Hall effect in the field-induced accumulation layer on the surface of single-crystal samples of a small-molecule organic semiconductor rubrene. The Hall mobility muH increases with decreasing temperature in both the intrinsic (high-temperature) and trap-dominated (low-temperature) conduction regimes. In the intrinsic regime, the density of mobile field-induced charge carriers extracted from the Hall measurements, nH, coincides with the density n calculated using the gate-channel capacitance and becomes smaller than n in the trap-dominated regime. The Hall data are consistent with the diffusive bandlike motion of field-induced charge carriers between trapping events.     

Theory of spin Hall effect: extension of the Drude model

An extension of the Drude model is proposed that accounts for the spin and spin-orbit interaction of charge carriers. Spin currents appear due to the combined action of the external electric field, crystal field, and scattering of charge carriers. The expression for the spin Hall conductivity is derived for metals and semiconductors that is independent of the scattering mechanism. In cubic metals, the spin Hall conductivity sigma s and charge conductivity sigma c are related through sigma s=[2pi variant /(3mc2)]sigma2c with m being the bare electron mass. The theoretically computed value is in agreement with experiment.     

More progressive technology of GaSb single crystal growth

GaSb single crystals were grown by the Czochralski method without encapsulant in an atmosphere of ionized hydrogen. It has been found that the resistivity increased by more than one order of magnitude (0.8–1.0Ω cm) and free carrier concentration decreased to the value of (1–2) × 10¹⁶ cm⁻³ in comparison with the crystals grown under molecular hydrogen atmosphere. A certain asymmetry in acceptor and donor passivation is assumed because the Hall concentration does not vary along the direction of crystal growth. Donors are passivated more than acceptors, which should be confirmed by increasing resistivity and decreasing mobility. Presented at the 6th Joint Seminar “Development of Materials Science in Research and Education”, Karlštejn, Czech Republic, 17–19 September 1996.     

Hall mobility in quasi one-dimensional conductors with charge density or spin density wave ground state

High mobilities found for free carriers below the phase transition in quasi one-dimensional crystals such as TTF-TCNQ and (TMTSF)₂PF₆ indicate that defect scattering is unimportant. We calculate the Hall mobility due to phonon scattering and find good agreement with the measured value of 10⁴cm²/Vsec for (TMTSF)₂PF₆ at 4K.     

Growth and characterization of single crystals of the quaternary TlGaSeS compound

The electrical conductivity and Hall effect for TlGaSeS crystals have been investigated over a wide temperature range. The crystals we used are grown by a modified Bridgman technique and possess p-type conductivity. The energy gap has been found to be 1.63 eV, whereas the ionization energy is 0.25 eV. The variations of the Hall mobility as well as the carrier concentration with temperature have been investigated. The scattering mechanisms of the carrier are checked over the whole investigated temperature range. Furthermore, the diffusion coefficient, relaxation time, and diffusion length of holes are estimated.