Development of a Seebeck coefficient Standard Reference Material

We have successfully developed a Seebeck coefficient Standard Reference Material (SRM^™), Bi₂Te₃, that is crucial for inter-laboratory data comparison and for instrument calibration. Certification measurements were performed using two different techniques on 10 samples randomly selected from a batch of 390 bars. The certified Seebeck coefficient values are provided from 10 to 390 K. The availability of this SRM will validate the measurement accuracy, leading to a better understanding of the structure/property relationships, and the underlying physics of new and improved thermoelectric materials. An overview of the measurement techniques and data analysis is given.     

Dependence of the resultant Seebeck coefficient on the thickness of Bi<Subscript>0.88</Subscript>Sb<Subscript>0.12</Subscript> alloy in welded M/Bi–Sb/M (M = Cu and Ni) composites

The local Seebeck coefficient α _L and the resultant Seebeck coefficient α _R of M/Bi_0.88Sb_0.12/M (M = Cu and Ni) composites with different thicknesses t _Bi–Sb of Bi–Sb alloy were measured as functions of z and T, where T is the absolute temperature, z is the distance from a center of Bi–Sb alloy to the middle point of two probes and α _L and α _R were measured using two probes separated by s=1.0 mm and s=t _Bi−Sb+0.1 mm, respectively. As a result, α _L was enhanced extremely at the position of 0.2–0.3 mm away from the interfaces, while the local temperature along a composite varies linearly with changes in z within Bi–Sb alloy. The local maximum of α _R at 344 K appeared at t _Bi−Sb≈0.9 mm, so that it is expected to increase up to −167 μV/K at t _Bi−Sb=0.87 mm from the expression fitted well to the experimental data, which is 2.1 times as large as the intrinsic α at 344 K of Bi–Sb alloy. Such a local enhancement in α _L would probably be caused by a temperature gradient across the depletion layer formed at the interface. The thermoelectric figure of merit ZT of a composite with an optimum t _Bi−Sb of 0.87 mm is expected to reach the large value of 0.98 at 344 K, which corresponds to 4.5 times as high a value as ZT=0.22 at 344 K of Bi–Sb alloy. It is thus considered that the increase in α _L at the interface is available as a useful mean of further increase in ZT of thermoelectric devices.     

Impurity band in SnBi<Subscript>4</Subscript>Se<Subscript>7</Subscript>: thermoelectric power and electrical resistivity measurements

Thermoelectric power and electrical resistivity measurements on polycrystalline samples of Bi₂Se₃ and stoichiometric ternary compound in the quasi-binary system SnSe–Bi₂Se₃ in the temperature range of 90–420 K are presented and explained assuming the existence of an impurity band. The variation of the electron concentration with temperature above 300 K is explained in terms of the thermal activation of a shallow donor, by using a single conduction band model. The density of states effective mass m ^*=0.15m ₀ of the electrons, the activation energy of the donors, their concentration, and the compensation ratio are estimated. The temperature dependence of the electron mobility in conduction band is analyzed by taking into account the scattering of the charge carriers by acoustic phonon, optical phonon, and polar optical phonon as well as by alloy and ionized impurity modes. On the other hand, by considering the two-band model with electrons in both the conduction and impurity bands, the change in the electrical resistivity with temperature between 420 and 90 K is explained.     

On the chaining dynamics of inclusions in SmC* free standing films

A simplified model of an inclusion represented by (+1)-wedge disclination and an accompanying hyperbolic defect ((−1)-wedge disclination) in smectic C* free standing films is used to describe the early stage of the ordering process of inclusions into chains. The elastic interaction between inclusions and their associated hyperbolic defects is used to discuss the dynamics observed experimentally during the inclusion chaining when inclusions are at distances much larger than their radii. This work was also supported by Grant No. 202/02/0840 of the Grant Agency of the Czech Republic and by the research project AV0Z1-010-914.     

Small inclusions in smectic C* free standing films

The creation and the coalescence of inclusions has recently been observed in smectic C* freely suspended films at the temperature near the smectic C*-cholesteric phase transition. A small finite anchoring energy permits to describe small inclusions by analytical approximate solutions of dipolar or quadrupolar type. Using the proposed solutions our model enables us to discuss the coalescence of smallest inclusions and their observed growth. This work was supported by the research project AV0Z1-010-914 and by Grant No. 202/02/0840 of the Grant Agency of the Czech Republic.     

Highly improved electroluminescence from double-layer devices based on a carbazole-functionalized europium<Superscript>3+</Superscript> complex

A novel europium complex Eu(TTA)₃(CPPO)₂ (1) (TTA=thenoyltrifluoroacetone, CPPO=9-[4-(diphenyl-phosphinoyl)-phenyl]-9H-carbazole) based on the phosphine oxide ligand with bipolar structure was used to fabricate double-layer devices. The strong hole injection and transport ability of 1 was proved. The luminance of 414 cd m⁻² was achieved with the device configuration ITO/Eu(TTA)₃(CPPO)₂(40 nm)/BCP (30 nm)/Mg:Ag (BCP = 2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline), which is favorable among double-layer organic light emitting devices based on small molecular Eu³⁺ complexes. The maximum current efficiency of 2.44 cd A⁻¹ and external quantum efficiency of 1.55% demonstrate the potential application of 1 as a promising candidate for high-efficiency, simple-structure and pure red-emitting devices.     

Large scale magnetic field influence on trap recharging waves in InP:Fe and GaAs:Cr

An impressive linear influence of a magnetic field on optically generated trap-recharging waves (TRW) has been observed in InP:Fe and GaAs:Cr. The phenomenon appears for the particular orientation of parallel to the samples’ surface and orthogonal to the direction of the electric field and wave vector of the TRW . The results are qualitatively explained taking into account the Lorentz force and a pronounced inhomogeneity of the charge transport and of the TRW parameters.     

Energy dependence of the isotopic effect in the (n,p) reaction on the germanium isotopes

Cross sections for^70,72,73,74Ge(n, p)^70,72,73,74Ga,⁷⁰Ge(n, 2n)⁶⁹Ge,⁷²Ge (n,)⁶⁹Zn ^m and⁷⁴Ge(n, )⁷¹Zn ^m reactions are measured in the energy range from 13.0 to 16.6 MeV by the activation method using Ge(Li) detector-ray spectroscopy and compared with predictions of the reaction model incorporating preequilibrium and equilibrium emission mechanisms to interpret the energy dependence of the isotopic effect occuring in the (n, p) reaction. The fitted single-particle state-density parametersg, determined here for the germaniums are discussed together with theg-values found previously for the Se, Zr and Pd isotopic chains. A validity of the consistency condition between the precompound and compound models, which relatesg to the experimental level-density parametera viaa= ² g/6 is demonstrated.     

Influence of the pump threshold on the single-frequency output power of singly resonant optical parametric oscillators

We demonstrate that for a given pump source, there is an optimum pump threshold to achieve the maximum single-frequency output power in singly resonant optical parametric oscillators. Therefore, cavity losses and parametric amplification have to be adjusted. In particular, continuous-wave output powers of 1.5 W were achieved with a 2.5 cm lithium niobate crystal in comparison with 0.5 W by a 5 cm long crystal within the same cavity design. This counter-intuitive result of weaker amplification leading to larger powers can be explained using a model from L.B. Kreuzer (Proc. Joint Conf. Lasers and Opt.-Elect., p. 52, 1969). Kreuzer also states that single-mode operation is possible only up to pump powers which are 4.6 times the threshold value. Additionally, implementing an outcoupling mirror to increase losses, single-frequency waves with powers of 3 W at 3.2 μm and 7 W at 1.5 μm could be generated simultaneously.     

Round-robin measurements of two candidate materials for a Seebeck coefficient Standard Reference Material™

A Standard Reference Material (SRM^™) for the Seebeck coefficient is critical for inter-laboratory data comparison and for instrument calibration. To develop this SRM^™, we have conducted an international round-robin measurement survey of two candidate materials—undoped Bi₂Te₃ and constantan (55% Cu and 45% Ni alloy). Measurements were performed in two rounds by twelve laboratories involved in active thermoelectric research using a number of commercial and custom-built measurement systems and techniques. We report the results of these measurements and the statistical analysis performed. Based on this extensive study, we have selected Bi₂Te₃ as the prototype standard material.     

Cu Doping Effect on Electrical Resistivity and Seebeck Coefficient of Perovskite-Type LaFeO3 Ceramics

Perovskite-type LaFe_1-xCu_xO₃ (x=0.10$, 0.14, 0.18) solid solution is prepared with the conventional solid-state reaction technique. The electrical resistivity and the Seebeck coefficient are measured in the temperature range 473-1073K to elucidate the Cu doping effect on the thermoelectric properties of the LaFeO₃. The electrical resisitivity of LaFe_1-xCu_xO₃ shows semiconducting behavior. The temperature dependence of the electrical resistivity indicates that the adiabatic small-polaron hopping mechanism is dominant for their electric transportations. The activation energy decreases with the increasing Cu content as well as the increasing temperature. The Seebeck coefficient changes from a negative value to a positive value around 510K, and increases with rising temperature up to 710K, then becomes saturated around 200μV/K. The Seebeck coefficient decreases with the substitution of Cu atoms in the temperature range of 573-1073K, while the electrical resistivity decreases with the substitution of Cu atoms in the whole measured temperature. Overall the power factor increases with rising temperature, and the highest value of power factor is 54μW/K²m for x=0.10 of Cu doping.     

Temperature-insensitive strain measurement using a birefringent interferometer based on a polarization-maintaining photonic crystal fiber

We propose a novel and simple scheme for a temperature-insensitive strain measurement by using a birefringent interferometer configured by a polarization-maintaining photonic crystal fiber (PM-PCF). The wavelength-dependent periodic transmission in a birefringent interferometer can be achieved by using a PM-PCF between two linear polarizers. Since the PM-PCF is composed of a single material, such as silica, the peak wavelength shift with temperature variation can be negligible because of the small amount of the birefringence change of the PM-PCF with temperature change. The measured temperature sensitivity is −0.3 pm/°C. However, the peak wavelength can be changed by strain because the peak wavelength shift is directly proportion to strain change. The strain sensitivity is measured to be 1.3 pm/με in a strain range from 0 to 1600 με. The measurement resolution of the strain is estimated to be 2.1 με. The proposed scheme has advantages of simple structure and low loss without a Sagnac loop, temperature insensitivity, ease installation, and short length of a sensing probe compared with a conventional PMF-based Sagnac loop interferometer.     

Thermochromic effect in synthetic opal/polyaniline composite structures

The design and construction of a novel storage/indicator bilayer system is described where ammonia gas stored in a porous material can be used to dope a colour-changing polyaniline film. Both reversible and irreversible colour change effects are possible. A thin synthetic opal film is coupled to a polyaniline film in a parallel plate glass cell with ammonia gas adsorbed on the silica balls that form the opal structure. When heated and cooled, ammonia reversibly exchanges between the opal and polyaniline films causing a very distinct change in the colour of the polyaniline film. This thermochromic effect is also electrically detectable because of the large concomitant change in the resistivity of the polyaniline film that accompanies its colour change.     

Stretching excitations of tetrahedral molecules in an anharmonically coupled local mode model

Summary  An anharmonically coupled local mode model is used to study highly excited stretching vibrational spectra and intensities of infrared transition in a tetrahedral molecule. This model is successfully applied to silane and silicon tetrafluoride. The author is very grateful to Prof. Zhong-Qi Ma for his continuing interest, support and sound advice. This work was supported by the National Natural Science Foundation of China and Grant No. LWTZ-1298 of the Chinese Academy of Sciences.     

Influence of the separation energy on the radius of neutron rich nuclei

The intensive studies of equilibration processes in heavy ion reactions have produced a need for information on nuclear level densities at high energies. In a recent paper, it was concluded that standard Fermi gas formulas will be incorrect by exponential factors at energies above 100 MeV. Exact calculations of the nuclear level density in bases as large as 10³⁸ have been made and are compared with Fermi gas formulas. Two possible alternative forms are considered. Both forms produce much better agreement at high energies than does the Fermi gas model. All calculations reported are for non-interacting Fermions, but the effects expected from the two-body interaction are briefly examined. These considerations have consequences not only in heavy ion physics but also in astrophysics.     

Nonlinear coherent backscattering

We theoretically examine diffusive transport and coherent backscattering of waves in dilute disordered media with weak nonlinearity. Depending on the type of nonlinearity, the coherent backscattering interference is either reduced or enhanced, as compared to the linear case.     

Fully-connected networks with local connections

Fully-connected mesh networks with local connections are described. Each connector links only nearest neighbors of the node lattice and carries enough passive pass-through vias to provide direct one-to-one links between all the nodes. If the nodes form a one-dimensional ring, then each connector must contain at least N(N−1)/2 physical channels. However, if the nodes are arranged in a d-dimensional hyper-torus, the number of channels per connector drops to N(N ^1/d −1)/2, which scales much more favorably at large N. Such arrangements can provide fully-meshed connectivity when parts of the network are physically inaccessible or when the network needs to be scaled up in a modular fashion.     

Birefringent photonic crystal fibers with zero polarimetric sensitivity to temperature

We designed, fabricated, and characterized birefringent holey fibers with zero polarimetric sensitivity to temperature. The sensitivity measurements were carried out in a wide spectral range of 0.68–1.55 μm in fibers with different hole and pitch values and with birefringence induced by a pair of large holes adjacent to the core. Our results show that zero sensitivity to temperature can be obtained at certain wavelengths for the bare fibers with properly adjusted geometrical parameters. Moreover, the spectral measurements of the sensitivity to temperature are in good agreement with the modeling results for all the investigated fibers.     

The influence of state dependent short range correlations on the depletion of the nuclear Fermi sea

The inlfuence of state dependent short range correlations on the occupation numbers of the single particle shell model orbits of the doubly closed shell nuclei¹⁶O and⁴⁰Ca is examined. The study shows that the effect of the state dependence of the short range correlations is rather small. The total depletion of the nuclear Fermi sea changes slightly compared with the one calculated by considering state independent short range correlations.     

Laser-assisted local patterning of ZnO-based spots for mirror-less lasing

ZnO is known as one of the best materials for the implementation of the random lasing effect, associated with mirror-less laser emission in a simultaneously amplifying and highly scattering medium. Normally, the fabrication of this medium requires a rather complicated procedure of deposition and thermal treatment of ZnO-based films on some specific substrates, yielding wurtzite-orientation ZnO nanocrystals. We demonstrate a rapid synthesis of highly efficient ZnO-based random lasing spots on a piece of Zn by employing the phenomenon of laser-induced air breakdown. Being ignited near the surface of a Zn target, plasma of the air breakdown serves as a local reactor to locally transform its properties and thus form a film of well-packed 20–40 nm ZnO nanospheres. Exhibiting extremely high amplification and scattering, this medium is capable of generating the random lasing effect within the exciton-based photoluminescent band.