不同基底对TiO2和SiO2薄膜的光学性能的影响

采用溶胶-凝胶法分别在K9玻璃、单晶硅和石英玻璃基底上制备了纳米TiO₂和SiO₂薄膜。利用SEM、UV-Vis及反射式椭圆偏振光谱仪对薄膜的微观结构及光学特性进行了表征和分析。结果表明:3种基底中, 单晶硅基底上TiO₂和SiO₂薄膜折射率最大;在非晶态K9玻璃和石英玻璃基底上TiO₂薄膜折射率和透光率差异较大;SiO₂薄膜在非晶态基底上折射率、透光率相近;3种基底上薄膜的折射率和消光系数都有随波长增大而减小的趋势, 同时Cauchy模型能较好的描述单晶硅基底上两种薄膜在400~800 nm波段的光学性能。     

不同基底对TiO2和SiO2薄膜的光学性能的影响

采用溶胶-凝胶法分别在K9玻璃、单晶硅和石英玻璃基底上制备了纳米TiO₂和SiO₂薄膜。利用SEM、UV-Vis及反射式椭圆偏振光谱仪对薄膜的微观结构及光学特性进行了表征和分析。结果表明：3种基底中, 单晶硅基底上TiO₂和SiO₂薄膜折射率最大;在非晶态K9玻璃和石英玻璃基底上TiO₂薄膜折射率和透光率差异较大;SiO₂薄膜在非晶态基底上折射率、透光率相近;3种基底上薄膜的折射率和消光系数都有随波长增大而减小的趋势, 同时Cauchy模型能较好的描述单晶硅基底上两种薄膜在400~800 nm波段的光学性能。     

丝网印刷法制备纳米银线透明导电薄膜

以高纯纳米银线作为导电介质,采用低成本丝网印刷法在普通透明玻璃基底上制备纳米银线薄膜层。经低温退火处理后,采用冷场发射扫描电子显微镜对薄膜的形貌进行表征;分别采用紫外可见分光光度计和四探针测试仪对薄膜的光学透过率和导电性能进行测试。实验系统研究了印刷浆料中纳米银线的含量、印刷层数和退火温度对薄膜的光学透过率和导电性能的影响。当印刷浆料中纳米银线的含量为3%(w/w),印刷层数达到3层,经低温275℃退火后,可制备出光电性能良好的纳米银线薄膜,该薄膜最大可见光透过率为39.4%,表面方块电阻仅为25.6Ω·□^-1。     

超声搅拌化学浴沉积法制备大颗粒和致密的CdS薄膜

采用超声搅拌化学浴法(UCBD)在SnO2:F透明导电玻璃衬底上制备了CdS薄膜.研究了退火和CdCl2处理对UCBD-CdS薄膜的表面形貌、晶体结构和直接带隙的影响,比较了沉积时间对UCBD-CdS薄膜中CdS聚集体颗粒大小和堆积致密性的影响.结果表明,CdCl2处理可使CdS聚集体中的小颗粒重新熔合在一起,但CdS聚集体的大小并没有改变.在UCBD-CdS薄膜的沉积过程中,CdS薄膜的横向和纵向生长速率之比会随着沉积时间的不同而改变,且沉积时间是获得大颗粒的CdS聚集体和致密的UCBD-CdS薄膜的重要影响因素.当沉积时间为40min时,获得的UCBD-CdS薄膜较致密,CdS聚集体的大小为180nm,膜厚为80.8nm,适合作为薄膜太阳电池的窗口层.     

液相沉积法制备ZnO/CdS复合纳米棒阵列薄膜及其光电性质

采用两步化学溶液沉积法在氧化铟锡(ITO)导电玻璃衬底上制备了ZnO/CdS复合纳米棒阵列薄膜.利用X射线衍射(XRD)仪、扫描电子显微镜(SEM)、紫外-可见(UV-Vis)吸收分光光度计、荧光(PL)光谱仪及表面光电压谱(SPS)研究了不同CdS沉积时间对复合薄膜的晶体结构、形貌、光电性质的影响.研究结果表明:ZnO纳米棒阵列表面包覆CdS纳米颗粒后,其吸收光谱可拓展到可见光区;与吸收光谱相对应在可见光区出现新的光电压谱响应区,这一现象证实,通过与CdS复合可显著提高ZnO纳米棒阵列在可见光区的光电转换性能;随着CdS纳米颗粒沉积时间的延长,复合纳米棒阵列薄膜在大于383nm波长区域的光电压强度逐渐减弱,而在小于383nm波长区域的光电压强度逐渐增强.用两种不同的电荷产生和分离机制对这一截然相反的光响应过程进行了详细的讨论和解释.     

P3HT修饰一维有序壳核式CdS/ZnO纳米棒阵列复合膜的光电化学性能

采用电化学方法在铟锡氧化物(ITO)导电玻璃上制备了高度有序的ZnO纳米棒阵列, 在ZnO纳米棒阵列上先后电化学沉积CdS纳米晶膜及聚3-己基噻吩(P3HT)薄膜得到P3HT修饰的一维有序壳核式CdS/ZnO纳米阵列结构, 并通过扫描电镜(SEM)、透射电镜(TEM)、X射线衍射(XRD)、能量散射X射线(EDX)等表征手段证实了该结构的形成. 以此纳米结构薄膜为光阳极组装新型半导体敏化太阳电池, 研究了CdS纳米晶膜的厚度和P3HT薄膜的沉积对电池光伏性能的影响, 初步探讨了电荷在电池结构中的传输机理, 结果表明, CdS纳米晶膜和P3HT薄膜的沉积有效地拓宽了光阳极的光吸收范围, 实验中电池的光电转换效率最高达到1.08%.     

二步电沉积法制备Au/氧化石墨烯复合薄膜作为SERS基底

采用二步电沉积方法在Ti片表面制备了Au-氧化石墨烯（Au-GO）复合薄膜,通过XRD、SEM、XPS等对薄膜的组成、结构和形貌进行了表征,并以罗丹明6G（R6G）为探针分子,对Au-GO/Ti基底的SERS活性进行了表征。结果显示,Au纳米颗粒尺寸约为60 nm,均匀、致密分布于GO表面,该基底显示出较高的SERS活性,对R6G分子的检测极限可达~10^-10 mol·L^-1,增强因子高达约10⁶,且基底显示出良好的稳定性,在冰箱中存放90 d后,SERS活性仅降低30%左右。     

二步电沉积法制备Au/氧化石墨烯复合薄膜作为SERS基底

采用二步电沉积方法在Ti片表面制备了Au-氧化石墨烯（Au-GO）复合薄膜,通过XRD、SEM、XPS等对薄膜的组成、结构和形貌进行了表征,并以罗丹明6G（R6G）为探针分子,对Au-GO/Ti基底的SERS活性进行了表征。结果显示,Au纳米颗粒尺寸约为60 nm,均匀、致密分布于GO表面,该基底显示出较高的SERS活性,对R6G分子的检测极限可达~10^-10 mol·L^-1,增强因子高达约10⁶,且基底显示出良好的稳定性,在冰箱中存放90 d后,SERS活性仅降低30%左右。     

三聚磷酸钠辅助水热合成制备氧化锌纳米片

以三聚磷酸钠为表面活性剂,采用水热合成法制备了氧化锌纳米片。采用场发射扫描电镜,透射电镜,紫外可见分光光度计和荧光光谱仪对氧化锌纳米片的显微结构和光学性能进行了表征,并对氧化锌纳米片的形成机理进行了探讨。结果表明：在220 ℃水热反应28 h可得到尺寸大约为600 nm × 500 nm × 50 nm(长×宽×高)结晶良好的六角形氧化锌纳米片,氧化锌纳米片对可见光的反射率超过90%,对紫外光的反射率小于20%,在395 nm附近均存在较强的紫外发射峰。氧化锌纳米片的形成是由于氧化锌晶体的正极面{001}晶面上显露的OH^-悬健部分被具有负电性的磷酸根取代,这种取代的发生,阻碍了溶液中的生长基元Zn(OH)₄^2-在该晶面上叠合,使得本应生长最快的(001)晶面生长受限,所以得到了片状的纳米氧化锌。     

基底对电沉积制备ZnO纳米棒阵列的影响

采用恒电位电沉积方法, 在未经修饰的ITO导电玻璃基底上通过控制实验条件制备出不同形貌的纳米ZnO结构, 而在经过ZnO纳米粒子膜修饰后的ITO导电玻璃基底上, 制备出透明、高取向、粒径小于30 nm的ZnO纳米棒阵列. 用扫描电子显微镜(SEM)、X射线衍射(XRD)以及透射光谱对制备出的ZnO纳米棒阵列的结构、形貌和透明性进行了表征. 测试结果表明, ZnO纳米棒阵列的平均直径为21 nm, 粒径分布窄, 约18～25 nm, 择优生长取向为[001]方向, 垂直于基底生长. 当入射光波长大于400 nm时, ZnO纳米棒阵列的透光率大于95%.     

Structural characterization of iron silicide nanoclusters in Si/FeSi heterosystems using magneto-optic ellipsometry

The initial stages of iron film growth on monocrystalline silicon were studied using a combined method of magneto-optic ellipsometry. The growth of iron silicide nanoclusters on the silicon surface was shown to occur at thickness d < 1.2 nm in non-magnetic phase.     

Study on the Structure and Properties of Ordered Conductive Polymer Ultrathin Film

A Langmuir-Blodgett (LB) inducing method was firstly used to prepare single layer and multilayer conducting composite PEDOT-PSS film. The film-forming ability of ionization ODA and ODA-SA monolayer spread on PEDOT-PSS nanoparticle sub-phase and the behavior of ODA/PEDOT-PSS assembly particles on pure water were firstly investigated. The results indicated that nanoparticles in the suphase are packed in the ionization monolayer and stable complex Langmuir film is formed at the air/water interface. It has been found that the best film-forming conditions for composite film are as follows:distinct interface was formed between ODA and PEDOT-PSS layer and single layer thickness of PEDOT-PSS was about 23 nm,well accordant to the size of PEDOT-PSS nanoparticles. Different structures were designed to test the conductive ability of these composite films and a variable range hopping (VRH) model was used to explain the film conductive mechanism. The results indicated that a 3D-VRH model explained well the transferring of charge carrier in the multilayer film.     

Correlation of SiO x layer thickness and properties of BOPP/SiO x composite films with spin coating process parameters

The effects of the spin coating process parameters on the thickness of the SiOx layer of the BOPP/SiOx composite film were investigated. When the concentration of tetraethoxysilane (TEOS) increased from 12.5 vol% to 55% vol%, the SiOx thickness increased from about 80 nm to 470 nm. In the sol time range of 1.5 h to 5 h the SiOx layer thickness reached a maximum at about 4 h and the change of the thickness roughly matched the change of the silica colloidal sphere sizes in sol. When the spin-coating speed of the dispensing stage increased from 450 r/min to 500 r/min, the SiOx layer thickness drastically decreased from about 1.67 μm to 400 nm. While the spin-coating speed of the thinning and drying stage went up to 1200 r/min, the SiOx layer thickness was in the range of 330 nm to 390 nm. It was also found that the SiOx layer thickness was almost increased linearly from about 500 nm to 1.02 μm with the ratio of the commercial silica colloidal to the TEOS from 0.2 to 1.0. The water contact angles decreased to about 23.0° for the BOPP/Si-Sol composite film with 1.67 μm SiOx layer and about 4.0° for the BOPP/mixing Si-Sol composite film with 1.02 μm SiOx layer. Compared to BOPP, the light transparency of the BOPP/Si-Sol composite films decreased by about 5.5% with the SiOx layer from about 80 nm to 1.67 μm and by 7.0% for the BOPP/mixing Si-Sol composite film with the SiOx layer from about 350 nm to 1.02 μm respectively.     

Polarization-controlled leakage current and photovoltaic effect in highly preferentially oriented BiFeO3 film

Highly preferentially oriented polycrystalline BiFeO₃ thin film was grown on FTO/glass substrate by a sol–gel method annealed at 500 °C. XRD result showed that the film adopts highly (100) preferential orientation. SEM results indicate that the film is composed of large grains of 40–200 nm and the thickness is about 320 nm. Room temperature saturated polarization and large Pr ~55 μC/cm² were obtained. Leakage current was substantially reduced by the controlling of ferroelectric polarization. Polarization-modulated conduction mechanism was studied. Moreover, substantial photovoltaic effect was observed.     

Symmetric pH-dependent swelling and antibacterial properties of chitosan brushes

Charged polymer brushes grafted to surfaces are of great interest for antibacterial, biosensor, nanofluidic, and drug delivery applications. In this paper, chitosans with quaternary ammonium salts, CH-Q, were immobilized on silicon oxide and characterized by in situ quartz-crystal microbalance with dissipation, QCM-D, and in situ spectroscopic ellipsometry, SE. Both methods showed that the hydrated film exhibited a minimum thickness of ~40 nm near pH 5 that increased strongly (up to ~80 nm) at lower and higher pH. This symmetric swelling is surprising because CH-Q is a cationic polymer. The CH-Q grafted layer was stable for pH values from 3 to 8 and exhibited rapid, reversible swelling and contraction upon varying pH. The CH-Q layer also reduced S. aureus colonization by a factor of ~30× compared to bare silicon oxide and an amine terminated silane grafted to silicon oxide. This antibacterial characteristic of CH-Q is attributed to the quaternary ammonium salts and the flexible polymer brush.     

In situ conductance measurements of copper phthalocyanine thin film growth on sapphire [0001

The current flowing through a thin film of copper phthalocyanine vacuum deposited on a single crystal sapphire [0001] surface was measured during film growth from 0 to 93 nm. The results, expressed as conductance vs. nominal film thickness, indicate three distinct film growth regions. Conductive material forms below about 5 nm and again above 35 nm, but in the intermediate thicknesses the film conductance was observed to decrease with increasing film thickness. With the aid of ac-AFM topology images taken ex situ, the conductance results are explained based on the Stranski-Krastanov (2D + 3D) film growth mechanism, in which the formation of a thin wetting layer is followed by the growth of discrete islands that eventually coalesce into an interpenetrating, conductive network.     

Nano silver coated patterned silica thin film by sol–gel based soft lithography technique

We report the fabrication of nano silver coated patterned silica thin film by sol–gel based soft lithography technique. Initially, silica gel film on soda lime silica glass was prepared by dipping technique from a silica sol of moderate silica concentration. A PolydimethylSiloxane elastomeric stamp containing the negative replica of the patterns of commercially available compact disc was used for embossing the film and the embossed film was cured up to 450 °C in pure oxygen atmosphere for oxide film. Finally, a precursor solution of AgNO₃ in water containing polyvinyl alcohol as an organic binder was made and used for coating on the patterned silica film by dipping technique and cured the sample up to 450 °C in reducing gas atmosphere to obtain nano silver layer. The formation of only cubic silver (~4.0 nm) and both cubic silver (~5.2 nm) and silver oxide (~3.6 nm) crystallites at 350 and 450 °C film curing temperatures respectively were confirmed by XRD measurements. The % of nano silver metal and silver oxide were 75.4 and 24.6 respectively. The nano-structured surface feature was visualized by FESEM whereas AFM revealed the high fidelity grating structure of the films. Presence of both spherical and rectangular structure (aspect ratio, 2.37) of nano silver/silver oxide was confirmed by TEM. The films were also characterized by UV–Vis spectral study. The patterned film may find application in chemical sensor devices.     

Protective coatings for stainless steel for SOFC applications

In this paper, a coating procedure based on spin coating of metal oxide polymer precursors on stainless steel, which decreases the oxide scale growth rate, is evaluated. The yttrium and cobalt solutions were used as polymer precursors, while a ferritic stainless steel Crofer 22 APU was used for the deposition of protective coatings. The thickness of deposited protective film was about ~500 nm. The effectiveness of protective layer was evaluated by cyclic thermogravimetry, oxide scale electrical conductivity, and X-ray diffractometry. The results show that steel coated with yttrium polymer precursor has better properties than uncoated or cobalt-coated sample.