Temperature—Induced Magnetization Reorientation in GdFeCo／TbFeCo Exchange—Coupled Double Layer Films

GdFeCo/TbFeCo exchange-coupled double-layer (ECDL) films used /or centre aperture type magnetically in-duced super resolution were investigated through experiments and theoretical calculation. The ECDL films were prepared by the magnetron sputtering method. Polar Kerr effect measurements showed that magnetization reorientation occurred in the GdFeCo layer with the temperature rising, which was subsequently analysed by the micromagnetic calculation based on the mean-field theory and a continuum model. Theoretical analysis is in agreement well with the experimental results.     

Growth of Structured Non—crystalline Boron—Oxygen—Nitrogen Films and Measurement of Their Electrical Properties

The boron-oxygen-nitrogen(BON) films have been grown on Si wafer by the low-frequency rf-plasma-enhanced metal-organic chemical vapour deposition method.The homogeneous film structure of completely amorphous BON is first fabricated on a low-temperature-made buffer at 500℃ with N2 plasma and is observed with a highresolution-electron microscope by the transmission-electron diffraction.The results show that the interfaces among substrate/buffer/film are clear and straight in the structured film.A heterogeneous film containing nano-sized crystalline particles is also grown by a routine growth procedure as a referential structure,The C-V characteristic is measured on both the amprphous and crystal-containing films by using the metal-oxidesemiconductor structure,The dielectric constants of the films are,therefore,deduced to be 5.9 and 10.5 for the amorphous and crystal-containing films,respectively,The C-V results also indicate that more trapped charges exist in the amorphous film.The binding energy of the B,O.and N atoms in the amprphous film is higher than that in the crystal-containing one,and the N-content in the latter is found to be higher than that in the former by x-ray photo-electron spectroscopy.The different electrical Property of the films is thought to originate from the energy state of the covalent electrons.     

Insitu Plane—View and Cross—Scctional Transmission Electron Microscopy of Fractal Formation in Au／a—Ge Bilayer Films

Fractal crystallization in Au/a-Ge bilayer films has been studied by in situ plane-view and cross-sectional transmission electron microscopy.The experimental evidence suggests that the fractal crystallizaqtion is controlled by both diffusion and reaction processes.The growth kinetics analysis indicates that both diffusion-limited aggregation and random successive nucleation mechanisms play an important role in fractal crystallization in Au/a-Ge bilayer films.     

Langmuir—Blodgett（L—B）薄膜

Ｌ－Ｂ薄膜是一种一维有序的类晶有机薄膜，由于这种薄膜制备方法上的特点，使它具有其它薄膜技术无法实现的独到之处。本文对这一薄膜的制备方法、结构、重要的光电性质和一些潜在应用作一简要的综述。     

Self—Organization of CdS Nanoparticles in Polystyrene Film

Self-organization of nano-CdS particles in polystyrene can be observed by encapsulating the particles with ndodecyl mercaptan owing to a strong electron transfer interaction between the modified CdS nanoparticles and aliphatic carbons in polystyrene.Consequently,ultraviolet/visible absorption edge of the treated nano CdS/polystyrene composites is further blueshifted in addition to the shift caused by the quantum size effect,and the fluorescence emission peak of the composite becomes redshifted and narrow.     

欧姆加热共蒸Y—Ba—Cu—O薄膜的金属—非金属转变及其对超导电性的影响

利用欧姆加热三元共蒸的方法制备了 Y-Ba-Cu-O 薄膜.研究了组分、热处理温度和降温速度诱导的金属-半导体转变及其对超导电性的影响.在这些研究的基础上,第一次利用欧姆加热三元共蒸方法获得了零电阻温度超过液氮温度的 Y-Ba-Cu-O 超导薄膜.其起始超导 T_c为98K,零电阻超导 T_c 为78.6K,中点超导 T_c 为84K,△T_c 为12K.     

Experimental study of the Plasma Fluorination of Y—Ba—Cu—O Thin Films

We have experimentally studied the surface mjodifications of Y-Ba-Cu-O (YBCO) thin films using CF4 plasma.The intensity of the plasma fluorination was controlled by controlled by changing the biasing voltage and the time of the plasma treatment.Microstructural analyses reveal that the oxygen content of the YBCO thin films was changed.Transport measurements of sufficient fluorinated YBCO films imply that the films changed totally into an oxygen-deficient semi-conducting state.From these experimental results,we believe that plasma fluorination is quite a useful method to form controllable a thin barrier layer in fabricating interface engineered junctions and to form a stable narrow weak-link region in fabricating planar superconductor-normal-superconductor junctions.     

高频溅射法制备Bi—Sr—Ca—Cu—O超导薄膜

以单晶 YSZ、YAG 为衬底,用高频溅射法制备了 Bi-Sr-Ca-Cu-O 超导薄膜,膜厚为0.5—1μm,其中两个样品的超导性能为 T_c(onset)=92K,T_c(mid)=78K,T_(ce)=42K 和T_c(onset)=95K,T_c(mid)=78K,T_(ce)=36.5K,经分析,后者的组成近似地为Bi_2Sr_2Ca_1Cu_2O_x.对靶组分、溅射和热处理条件与生成的膜成分、物相、形貌以及超导电性的关系做了讨论.     

Read—out of a read—only super—resolution optical disc with a Si mask

A novel read-only super-resolution optical disc structure (substrate/mask layer/dielectric layer) is proposed in this paper. By using a Si thin film as the mask layer, the recording pits with a diameter 380nm and a depth 50nm are read out on the dynamic measuring equipment; the laser wavelength α is 632.8nm and the numerical aperture is 0.40. In the course of reproduction, the laser power is 5mW and the rotation velocity of the disc is 4m·s^-1. The optimum thickness of the Si thin film is 18nm and the signal-to-noise ratio is 32dB.     

Cu—Ba—O薄膜在超短激光脉冲作用下的光透射率特性

用泵浦－探测技术测量了金属－介质复合薄膜Ｃｕ－Ｂａ－Ｏ的光学透射率在超短激光脉冲作用下随延迟时间的瞬态变化曲线，获得了薄膜对光的透射率迅速减小并在皮秒时间内恢复原状的实验结果。该现象是由薄膜中金属超微粒子内费米能级附近电子被飞秒激光脉冲激发所产生的非平衡态电子经历瞬态弛豫造成的。本文从理论上给出了薄膜中Ｃｕ超微粒子的电子声子相互作用常数ｇ的修正数值。     

记录薄膜Te—In—Sb光学性质的研究

采用高频溅射方法制成Te-In-Sb系统的非晶态薄膜.系统的研究了不同组分薄膜的透射、反射谱,及其在结晶过程中的变化.用透射电镜研究了Te-In-Sb薄膜的结构和晶化过程.分析了组分对薄膜的吸收系数、介电常数、光学能隙等光学性质的影响.并由此综合评价了Te-In—Sb系统中比较适合作为光盘介质的组成.     

常态下Pr掺杂Y—Ba—Cu—O薄膜的激光响应研究

本文对倾斜基片上生长的ＹＢａＣｕＯ薄膜在不同膜厚和多种浓度Ｐｒ掺杂条件下的激光响应进行了研究．这种现象的根源是薄膜层状结构造成的热电系数张量各向异性．与未掺杂ＹＢａＣｕＯ薄膜的激光响应相比，掺Ｐｒ使薄膜的激光响应幅度显著提高，并且仍具有较好的能量线性响应和时间响应．掺Ｐｒ２０％，效应最明显；掺Ｐｒ５０％时，效应则显著降低．本文认为，由于Ｐｒ掺杂使ＣｕＯ面载流子浓度降低从而显著增强声子曳引作用是导致ＹＢａＣｕＯ薄膜ＣｕＯ面热电系数增大及其激光响应幅度提高的主要原因     

Preparation of p—n Junction Diode by B—Doped Diamond Film Grown on Si—Doped c—BN

A heterojunction diode has been fabricated by boron-doped p-type diamond thin film grown epitaxially on a silicon-doped n-type cubic boron nitride bulk crystal using the conventional hot filament chemical vapour deposition method.The ohmic electrode of Ti(50nm)/Mo(100nm)/Au(300nm)for the p-type diamond film and the bulk crystal of the c-BN were deposited by the rf planar magnetron method.Then the device was annealed at 410℃ in air for 1h in order to form ohmic metal alloy,The current-voltage characteristics of the heterojunction diode were measured and the result indicated that the rectification ratio reached 10^5,and the turn-on voltage and the highest current were 7V and 0.36mA,respectively.