The characteristics for H<Subscript> 2</Subscript><Superscript> +</Superscript>-like impurities confined by spherical quantum dots

The energy spectra of H₂ ⁺-like impurities confined in finite spherical quantum dots have been calculated as a function of the distance between nuclear with different sizes on the basis of effective-mass approximation by linear variational method. B-splines have been used as basis functions, which can easily construct the trial wavefunctions with appropriate boundary and cusp conditions. The quantitative analyses of the partial wave weights for ground state and some low lying states have been done.     

Mechanism of fluorescence energy transfer in aqueous solution cadmium sulfide quantum dots

Cadmium sulfide (CdS) quantum dots (QDs) prepared by a convenient chemical method have been characterized using absorption, fluorescence, and photoluminescence excitation techniques. The photoluminescence excitation studies show that there is an electron transfer from the surface adsorbate (thiourea) to CdS QDs in aqueous solution. The excitation band with peak maximum at 5.8 eV is assigned to the electronic transitions in the chemisorbed thiourea, whereas the excitation band between 3.45 and 3.7 eV corresponds to the band-to-band transition within the nanocrystalline CdS host. The absorption spectroscopy of the CdS QD solutions shows a strong absorption peak which is generated from thiourea. The band-edge fluorescence of the CdS QDs has also been investigated. It is shown that the fluorescence property of the CdS QDs can be enhanced by adding cadmium chloride (CdCl₂) solution.     

Investigation of interband optical transitions by near-resonant magneto-photoluminescence in InAs/GaAs quantum dots

Resonant photoluminescence experiments performed on self-assembled InAs/GaAs quantum dots under strong magnetic field up to 28 T give rise to an accurate determination of the interband magneto-optical transitions. As this technique minimizes the effect of the homogeneous broadening of the transitions due to the size and composition fluctuations of the dots, the experimental spectra display well-defined peaks. A good agreement is found between the experimental data and calculations using an effective mass model including the coupling between the mixed exciton-LO phonon states. Transitions involving excitonic polarons are clearly identified. Moreover, a light-hole to conduction transition is also evidenced in agreement with previous theoretical predictions.     

Hydrogenic impurity states in zinc-blende GaN/AlN coupled quantum dots

Based on the effective-mass approximation, we have calculated the donor binding energy of a hydrogenic impurity in zinc-blende (ZB) GaN/AlN coupled quantum dots (QDs) using a variational method. Numerical results show that the donor binding energy is highly dependent on the impurity position and coupled QDs structural parameters. The donor binding energy is largest when the impurity is located at the center of quantum dot. When the impurity is located at the interdot barrier edge, the donor binding energy has a minimum value with increasing the interdot barrier width.     

Background charges and quantum effects in quantum dots transport spectroscopy

We extend a simple model of a charge trap coupled to a single-electron box to energy ranges and parameters such that it gives new insights and predictions readily observable in many experimental systems. We show that a single background charge is enough to give lines of differential conductance in the stability diagram of the quantum dot, even within undistorted Coulomb diamonds. It also suppresses the current near degeneracy of the impurity charge, and yields negative differential lines far from this degeneracy. We compare this picture to two other accepted explanations for lines in diamonds, based respectively on the excitation spectrum of a quantum dot and on fluctuations of the density-of-states in the contacts. In order to discriminate between these models, we emphasize the specific features related to environmental charge traps. Finally we show that our model accounts very well for all the anomalous features observed in silicon nanowire quantum dots.     

Shot noise in a quantum dot coupled to non-magnetic leads: effects of Coulomb interaction

We study electron transport through a quantum dot, connected to non-magnetic leads, in a magnetic field. A super-Poissonian electron noise due to the effects of both interacting localized states and dynamic channel blockade is found when the Coulomb blockade is partially lifted. This is sharp contrast to the sub-Poissonian shot noise found in the previous studies for a large bias voltage, where the Coulomb blockade is completely lifted. Moreover, we show that the super-Poissonian shot noise can be suppressed by applying an electron spin resonance (ESR) driving field. For a sufficiently strong ESR driving field strength, the super-Poissonian shot noise will change to be sub-Poissonian.     

Bound states in the continuum in two-dimensional serial structures

We investigate the occurrence of bound states in the continuum (BICs) in serial structures of quantum dots coupled to an external waveguide, when some characteristic length of the system is changed. By resorting to a multichannel scattering-matrix approach, we show that BICs do actually occur in two-dimensional serial structures, and that they are a robust effect. When a BIC is produced in a two-dot system, BICs also occur for several coupled dots. We also show that the complex dependence of the conductance upon the geometry of the multi-dot system allows for a simple picture in terms of the resonance pole motion in the multi-sheeted Riemann energy surface. Finally, we show that in correspondence to zero-width states for the open system one has a multiplet of degenerate eigenenergies for the associated closed serial system, thereby generalizing results previously obtained for single dots and two-dot structures.     

Electric field effect on the donor impurity states in zinc-blende symmetric InGaN/GaN coupled quantum dots

Based on the effective-mass approximation, the donor binding energy in a cylindrical zinc-blende (ZB) symmetric InGaN/GaN coupled quantum dots (QDs) is investigated variationally in the presence of an applied electric field. Numerical results show that the ground-state donor binding energy is highly dependent on the impurity positions, coupled QDs structure parameters and applied electric field. The applied electric field induces an asymmetric distribution of the donor binding energy with respect to the center of the coupled QDs. When the impurity is located at the center of the right dot, the donor binding energy has a maximum value with increasing the dot height. Moreover, the donor binding energy is the largest and insensitive to the large applied electric field (F?400 kV/cm) when the impurity is located at the center of the right dot in ZB symmetric In_0.1Ga_0.9N/GaN coupled QDs. In addition, if the impurity is located inside the right dot, the donor binding energy is insensitive to large middle barrier width (Lmb?2.5 nm) of ZB symmetric In_0.1Ga_0.9N/GaN coupled QDs.     

Electron and hole effective masses in self-assembled quantum dots

Electron and hole effective masses in self-assembled InAs/GaAs quantum dots are determined by fitting the energy levels calculated by a single-band model to those obtained by a more sophisticated tight-binding method. For the dots of various shapes and dimensions, the electron effective-mass is found to be much larger than that in the bulk and become anisotropic in the dots of large aspect ratio while the hole effective-mass becomes almost isotropic in the dots of small aspect ratio. For flat InAs/GaAs quantum dots, the most appropriate value for the electron and hole effective-mass is believed to be the electron effective-mass in bulk GaAs and the vertical heavy-hole effective-mass in bulk InAs, respectively.     

Hydrogenic donor states in wurtzite InGaN/GaN coupled quantum dots

The binding energies of the hydrogenic impurity in wurtzite InGaN coupled quantum dots (QDs) are calculated by means of a variational method, considering the strong built-in electric field induced by the spontaneous and piezoelectric polarizations. Numerical results show that the strong built-in electric field induces an asymmetrical distribution of the donor binding energy with respect to the center of the coupled QDs. When the impurity is located in the center of the left dot, the donor binding energy is largest and insensitive to the barrier height of the wurtzite InGaN coupled QDs.     

Binding energy of hydrogenic impurity states in an inverse parabolic quantum well under static external fields

In the present theoretical study, we investigate the influence of external fields (electric and/or magnetic) on the binding energy of hydrogenic impurities in a GaAs/Ga_1-xAl_xAs inverse parabolic quantum well, in which the parabolicity depends on the Al concentrations at the well center. Our calculations have been based on the potential morphing method in the effective mass approximation. The systematic theoretical investigation contains results with all possible combinations of the involved parameters, as quantum well width, Al concentrations at the well center, position of the impurity and magnitudes of the external fields.     

Γ-X mixing in GaAs-Ga<Subscript>1-x</Subscript>Al<Subscript>x</Subscript>As quantum wells under hydrostatic pressure

The mixing between the Γ and X conduction-band valleys in GaAs-Ga_1-xAl_xAs quantum wells is investigated by using a phenomenological model which takes into account the effects of applied hydrostatic pressure. The dependencies of the variationally calculated photoluminescence peak-energy transitions on the applied hydrostatic pressure and quantum-well width are presented. A systematic study of the Γ-X mixing parameter is also reported. In particular, it is shown that the inclusion of the Γ-X mixing explains the non-linear behavior in the photoluminescence peak of confined exciton states that has been experimentally observed for pressures above 15 kbar in GaAs-Ga_1-xAl_xAs quantum wells.     

Chain teleportation via partially entangled states

We investigate chain teleportation with some nonmaximally entangled channels. The efficiencies of two chain teleportation protocols, the separate chain teleportation protocol (SCTP) and the global chain teleportation protocol (GCTP), are calculated. In SCTP the errors are corrected between every step while in GCTP the errors are corrected only at the end. We show that GCTP is more efficient than SCTP.     

Controlling the energy transfer between near-field optically coupled ZnO quantum dots

We performed time-resolved spectroscopy of ZnO quantum dots (QD), and observed exciton energy transfer and dissipation between QD via an optical near-field interaction. Two different sizes of ZnO QD with resonant energy levels were mixed to test the energy transfer and dissipation using time-resolved photoluminescence spectroscopy. The estimated energy transfer time was 144 ps. Furthermore, we demonstrated that the ratio of energy transfer between the resonant energy states could be controlled.     

Excited states populated via nucleon transfer in the reaction32S +208Pb

The population strengths of excited states in nuclei produced via transfer reactions in the 185 MeV³²S +²⁰⁸Pb reaction have been investigated by heavy-ion- coincidence techniques. The cross sections extracted from the spectra, have been analyzed in the framework of the Complex WKB approximation theory.     

Modelocked quantum dot vertical external cavity surface emitting laser

We report the first successful modelocking of a vertical external cavity surface emitting laser (VECSEL) with a quantum dot (QD) gain region. The VECSEL has a total of 35 QD-layers with an emission wavelength of about 1060 nm. In SESAM modelocked operation, we obtain an average output power of 27.4 mW with 18-ps pulses at a repetition rate of 2.57 GHz. This QD-VECSEL is used as-grown on a 450 μm thick substrate, which limits the average output power.     

Multi-photon behaviors of shot noise in a quantum dot system under the perturbation of two microwave fields

We have investigated the shot noise affected by the perturbation of two microwave fields (MWFs) with frequencies ω₁ and ω₂, which can be classified as the commensurate and incommensurate external ac fields. The time-dependent current correlation function and the spectral density of shot noise have been obtained. They are very different compared with the single-field applied system in the nonlinear regime of the ac potentials. The different photon absorption and emission processes induce different kinds of noise spectral density. We have performed the numerical calculations for both commensurate balanced and unbalanced photon absorptions and emissions. The multi-photon procedure can be seen clearly from the resonance of shot noise. Different commensurate number q = ω₂/ω₁ contributes to different photon absorption and emission behaviors. It is found that the asymmetric configuration of shot noise is intimately associated with the commensurate number q. The differential conductance appears symmetric and asymmetric behaviors, and the channel blockade exhibits. The shot noise is large enough to surpass its saturated value for the unbalanced photon absorption case. The sensitive behaviors of Fano factor associated with different commensurate numbers and amplitudes of ac fields signify that the shot noise can be controlled by external MWFs significantly.     

Ballistic transport in bilayer nano-graphite ribbons under gate and magnetic fields

This study uses the tight-binding model to examine the ballistic transport of short and infinitely long bilayer nano-graphite ribbons for different stacked structures, AA and AB, under perpendicularly applied gate and magnetic fields. In the small bias region, the conduction of the AB-stacked ribbon is better than for the AA. Under a gate field with small bias, the AB-stacked ribbon exhibits a significant current peak at the zero gate field point, similar to the graphene ribbon. On the contrary, this current peak is not found in the AA-stacked case. Under a perpendicular magnetic field with small bias, the magnetoresistance ratio in both stacked graphene ribbons are proportional to the square of the magnetic field.     

Combined effects of electric and magnetic fields on confined donor states in a diluted magnetic semiconductor parabolic quantum dot

A variational formalism for the calculation of the binding energies of hydrogenic donors in a parabolic diluted magnetic semiconductor quantum dot is discussed. Results are obtained for Cd Mn Te/Cd Mn Te structures as a function of the dot radius in the presence of external magnetic and electric fields applied along the growth axis. The donor binding energies are computed for different field strengths and for different dot radii. While the variation of impurity binding energy with dot radii and electric field are as expected, the polarizability values enhance in a magnetic field. However, for certain values of dot radii and in intense magnetic fields the polarizability variation is anomalous. This variation of polarizability is different from non- magnetic quantum well structures. Spin polaronic shifts are estimated using a mean field theory. The results show that the spin polaronic shift increases with magnetic field and decreases as the electric field and dot radius increase.     

Mode-locked diode-pumped vanadate lasers operated with PbS quantum dots

The use of glasses doped with PbS nanocrystals as intracavity saturable absorbers for passive Q-switching and mode locking of c-cut Nd:Gd_0.7Y_0.3VO₄, Nd:YVO₄, and Nd:GdVO₄ lasers is investigated. Q-switching yields pulses as short as 35 ns with an average output power of 435 mW at a repetition rate of 6–12 kHz at a pump power of 5–6 W. Mode locking through a combination of PbS nanocrystals and a Kerr lens results in 1.4 ps long pulses with an average output power of 255 mW at a repetition rate of 100 MHz.