Red top-emitting organic light-emitting device using 6, 13-di-(3, 5-diphenyl)phenylpentacene doped emitting system

Fluorescent red organic light-emitting devices (OLEDs) with narrow emission and negligible current-induced quenching by using a pentacene derivative of 6,13-di-(3,5-diphenyl)phenylpentacene (PDT) doped emitting system were demonstrated. With the incorporation of C₆₀ outcoupling layer, the PDT-based top-emitting OLED showed superior electroluminescence performances with Commission Internationale d’Eclairage color coordinates of (0.64, 0.36) and luminous efficiency of ～3 cd/A. To clarify the actual energy transfer process in PDT-doped emitting system, the Förster’s radius was calculated. The results indicated that the energy transfer process is predominantly from the host of tris(8-hydroquinoline) aluminum to guest of PDT via the assistant dopant of 5,6,11,12-tetraphenylnaphthacene.     

Lighting object-based nondoped-type white organic light-emitting diode with N,N'-diphenyl-N,N'-bis(1-naphthyl)-(1,1'-benzidine)-4,4'-diamine as the chromaticity-tuning layer

We demonstrate a nondoped white organic light-emitting diode in which the blue, green, and red emissions are generated from 4,4(')-bis(2,2(')-diphenylvinyl)-1,1(')-biphenyl, tris(8-hydroxyquinoline)aluminum, and a submonolayer of 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7- tetramethyl-julolidyl 9-enyl)-4H-pyran layers, respectively. A thin layer of N,N(')-diphenyl-N,N(')-bis(1-naphthyl)(1,1(')-benzidine)-4,4(')-diamine (NPB), which differed from the traditional hole-transporting layer, was introduced into the device. The thickness of this thin NPB layer was changed to tune the chromaticity and optimize the white color quality. The white device with a 3 nm chromaticity-tuning NPB layer gives the Commission Internationale de l'Eclairage-1931 xy coordinate of (0.327, 0.336), a color rendering index of 90.2, a maximum luminance of 19,096 cd/m(2), and a maximum current efficiency of 4.12 cd/A. The electroluminescence mechanism of the white device was also discussed.     

Study of the interface formed between poly(2-methoxy-5-(2′-ethyl-hexyloxyl)-p-phenylene vinylene) and indium tin oxide in top emission organic light emitting diodes

X-ray photoelectron spectroscopy (XPS) technique have been used to investigate the interface formed between poly(2-methoxy-5-(2′-ethyl-hexyloxyl)-p-phenylene vinylene) (MEH-PPV) and indium tin oxide (ITO) layer in top emission organic light emitting diodes. A weak but noticeable diffusion of indium into the polymer film was observed. Interactions between the diffused metallic atoms with the polymer resulted in the formation of carbon-metal complexes at the interface region. Compared to the ITO/MEH-PPV interface, the penetration of indium into the polymer layer was less important and may be explained by the surface morphology of the polymer film. It was however, a probable factor for fast degradation of devices using this structure.     

Color-tunable organic light-emitting devices using a thin N,N′-bis-(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine layer at heterojunction interface

Novel types of multilayer color-tunable organic light-emitting devices (OLEDs) with the structure of indium tin oxide (ITO)/N,N′-bis-(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB)/aluminum (III)bis(2-methyl-8-quinolinato)4-phenylphenolato (BAlq)/tris-(8-hydroxyquinolate)-aluminum (Alq₃)/Mg:Ag were fabricated. By inserting a thin layer with different thickness of a second NPB layer at the heterojunction interface of BAlq/Alq₃, the emission zone of devices shifted greatly and optoelectronic characteristics underwent large variation. Although BAlq was reported as a very good hole-blocking and blue-light-emission material, results of measurements in this paper suggested that a certain thickness of NPB layer between BAlq and Alq₃ plays an important role to modify device characteristics, which can act as recombination-controlling layer in the multilayer devices. It also provides a simple way to fabricate color-tunable OLEDs by just changing the thickness of this “recombination-controlling” layer rather than doping by co-evaporation.