孔洞缺陷对二维石墨烯/氮化硼横向异质结热传导的调控

本文采用孔洞缺陷来实现对二维石墨烯/氮化硼横向异质结热导率的调控.平衡态分子动力学(EMD)计算结果表明,界面孔洞的引入会降低二维石墨烯/氮化硼横向异质结的热导率.相较于有序的孔洞分布,无序的孔洞分布能够更有效地降低异质结的热导率,这一现象可通过声子安德森局域化来解释.孔洞缺陷的存在导致声子的频率和波失发生变化,从而使声子散射变得更加频繁,孔洞随机分布时,则导致声子波在材料中发生多次反射和散射,最终形成局域振动模式.本研究揭示了孔洞缺陷降低二维石墨烯/氮化硼横向异质结热导率的物理机制,对二维热电材料的结构设计有一定的指导意义.     

Real-space pseudopotential calculations for graphene dots embedded in hexagonal boron nitride

A major challenge for graphene-based applications is the creation of a tunable electronic band gap as would be present for traditional semiconductor alloys. Since hexagonal boron nitride has a very similar lattice structure to graphene, it is a natural candidate for modifying the electronic structure of graphene by forming a hybrid phase sheet containing domains of graphene and hexagonal boron nitride, as has been done experimentally. Here we investigate the properties of such hybrid sheets using pseudopotential-density functional theory implemented in real space. We find for a graphene dot comparable in size to those observed in experiment, the band gap of the sheet is not significantly modified.     

Energetics and structural properties of carbon and oxygen doped hexagonal boron nitride sheets

Energetics and structural properties of carbon and oxygen doped hexagonal boron nitride sheets have been investigated by performing density functional theory calculations. Substitutional doping model has been considered in the neutral charge state. C and O atoms replaced either B or N site in the system as impurities. A systematic study has been performed to see the effect of cell size on the calculated quantities, such as formation energy, relaxation energy, charge and bond length. It has been found that substitution of O atom on the N site in the hexagonal BN sheet is more favorable.     

Magnetic-like field inducing negative Dirac mass in graphene on hexagonal boron nitride

The tight-binding electrons in graphene grown on top of hexagonal boron nitride (h-BN) substrate are studied. The two types of surfaces on the h-BN substrate give rise to Dirac fermions having positive and negative masses. The positive and negative masses of the Dirac fermions lead to the gapped graphene to behave as a “pseudo” ferromagnet. A very large (pseudo) tunneling magnetoresistance is predicted when the Fermi level approaches the gap region. The energy gap due to the breaking of sublattice symmetry in graphene on h-BN substrate is analogous to magnetic-induced energy gap on surface of topological insulators. We point out that positive and negative masses may correspond to signs of magnetic-like field perpendicular to graphene sheet acting on pseudo magnetic dipole moment of electrons, leading to pseudo-Larmor precession and Stern–Gerlach magnetic force.     

Charge distribution of a potassium-doped combined system of graphene and hexagonal boron nitride

By using first-principles density functional theory, we investigate the charge distribution of a potassium-doped layered combined system of graphene and hexagonal boron nitride. Two configurations of potassium-doped hexagonal boron nitride layers on graphenes and the reverse geometry of graphenes on hexagonal boron nitride layers are considered. We find that the charge distribution exhibits different features in these two situations. In the former case, the outmost hexagonal boron nitride layer cannot screen the external charges offered by potassium atom completely and most of the transferred charges reside on the two bounding layers. In contrary, the outmost graphene layer near the potassium atom can accept almost all of the transferred charges and only a few of them stay at interior layers in the latter case. A more amazing result is that the characteristics of charge transfer are independent of the number of hexagonal boron nitride layers and graphenes.     

Effects of defects on heat conduction of graphene/hexagonal boron nitride heterointerface

We investigate the effects of point defects on the Interface Thermal Resistance (ITR) of graphene/hexagonal boron nitride (G/h-BN) heterointerface with various stacking forms by ultrafast thermal pulse method. The results reveal that the ITR of different stacking forms presents a significant downward trend with the existence of point defects. This counterintuitive behavior is attributed to the defects increase the vibration intensity of out-of-plane phonons of graphene in low-frequency region, thus enhancing the phonons coupling between graphene and h-BN layer. ITR of G/h-BN is further reduced by 50% with the defect rate increases from 0% to 5% and that is reduced by 65% with the temperature rises from 200 K to 700 K. Besides, it is found that the defective G/h-BN has thermal rectification characteristic and that is positively related to temperature and defect rate. Our study provides a practical way for the application of defects in graphene and a new approach for the design of thermal rectifier devices.     

Thermoelastic behaviour of hexagonal graphite-like boron nitride

Abstract

A synchrotron X-ray diffraction study on hexagonal graphite-like boron nitride (h-BN) was performed under high pressures and temperatures. From the measured P-V-Trelation for h-BN (with a three-dimensional ordering parameter P₃ = 0.9) in the temperature range from 298 to 1273 K and up to 6.7 GPa, the thermoelastic parameters are derived by fitting a modified high temperature Birch-Murnaghan equation of state. The results are: bulk modulus B₀[GPa] = 27.6-0.0081(T[K]-298) and its pressure derivative B¹ = 10.5 + 0.0016(T [K] - 298). These values are for samples with P₃ = 0.9 and are quite different for samples with different values of the order parameter. This parameter is shown to have a leading role in the determination of the thermoelastic properties of h-BN, which explains and reconciles the differences between previous results.     

Inelastic electron irradiation damage in hexagonal boron nitride

We present a study of the inelastic effects caused by electron irradiation in monolayer hexagonal boron nitride (h-BN). The data was obtained through in situ experiments performed inside a low-voltage aberration-corrected transmission electron microscope (TEM). By using various specialized sample holders, we study defect formation and evolution with sub-nanometer resolution over a wide range of temperatures, between −196 and 1200 °C, highlighting significant differences in the geometry of the structures that form. The data is then quantified, allowing insight into the defect formation mechanism, which is discussed in comparison with the potential candidate damage processes. We show that the defect shapes are determined by an interplay between electron damage, which we assign to charging, and thermal effects. We additionally show that this damage can be avoided altogether by overlapping the samples with a monolayer of graphene, confirming this for h-BN and providing a way to overcome the well-known fragility of h-BN under the electron beam.     

Huge excitonic effects in layered hexagonal boron nitride

The all-electron GW approximation energy band gap of bulk hexagonal boron nitride is shown to be of indirect type. The resulting computed in-plane polarized optical spectrum, obtained by solving the Bethe-Salpeter equation for the electron-hole two-particle Green function, is in excellent agreement with experiment and has a strong anisotropy compared to out-of-plane polarized spectrum. A detailed analysis of the excitonic structures within the band gap shows that the low-lying excitons belong to the Frenkel class and are tightly confined within the layers. The calculated exciton binding energy is much larger than that obtained by Watanabe et al. [Nat. Mater. 3, 404 (2004).] based on a Wannier model assuming h-BN to be a direct-band-gap semiconductor.     

Room-temperature phonon-coupled single-photon emission in hexagonal boron nitride

Photon-lattice(phonon) coupling is fundamental to light-matter interaction,particularly when it reaches the quantum limit of the phonon-coupled single-photon emission,which holds great potential for quantum manipulation and quantum information transduction.Here,we report single defect state-phonon coupling in hexagonal boron nitride(h BN) at room temperature.An ultrabroad spectrum of single-photon emissions can be achieved by selecting the excitation energies.Using photoluminescence excitation s...     

基于二维六方氮化硼材料的光子晶体非对称传输异质结构设计

二维六方氮化硼(hexagonal boron nitride,hBN)材料在产生光学稳定的超亮量子单光子光源领域有着潜在应用,有望用于量子计算和信息处理平台,已成为研究热点.而光学非对称传输设备是集成量子计算芯片中的关键器件之一.本文从理论上提出了一种基于hBN材料光子晶体异质结构的纳米光子学非对称光传输器件.运用平...     

含空位二维六角氮化硼电子和磁性质的密度泛函研究

基于密度泛函理论的第一性原理计算, 研究了含B原子空位(V_B), N原子空位(V_N), 以及含B–N键空位 (V_B+N)缺陷的二维氮化硼(h-BN)的电子和磁性质. 在微观结构上, V_B体系表现为在空位附近的N原子重构成等腰三角形, V_N体系靠近空穴的B 原子形成等边三角形, V_B+N体系靠近空穴处的B和N原子在h-BN平面上重构为梯形. 三种空位缺陷都使h-BN的带隙类型从直接带隙转变为间接带隙. V_B体系的总磁矩为1.0 μ_B, 磁矩全部由N原子贡献. 其中空穴周围的三个N原子磁矩方向不完全一致, 存在着铁磁性和反铁磁性两种耦合方式. 对于V_N 体系, 整个晶胞内的总磁矩也为1.0 μ_B, 磁矩在空穴周围区域呈现一定的分布. 关键词： 二维h-BN 空位 电子结构 磁性     

Intercalation of graphite and hexagonal boron nitride by lithium

Although graphite and hexagonal form of BN (h-BN) are isoelectronic and have very similar lattice structures, it has been very difficult to intercalate h-BN while there are hundreds of intercalation compounds of graphite. We have done a comparative first principles investigation of lithium intercalation of graphite and hexagonal boron nitride to provide clues for the difficulty of h-BN intercalation. In particular lattice structure, cohesive energy, formation enthalpy, charge transfer and electronic structure of both intercalation compounds are calculated in the density functional theory framework with local density approximation to the exchange-correlation energy. The calculated formation enthalpy of the considered forms of Li intercalated h-BN is found to be positive which rules out h-BN intercalation without externally supplied energy. Also, the Li(BN)₃ form of Li-intercalated h-BN is found to have a large electronic density of states at the Fermi level and an interlayer state that crosses Fermi level at the zone center; these properties make it an interesting material to investigate the role of interlayer states in the superconductivity of alkali intercalated layered structures. The most pronounced change in the charge distribution of the intercalated compounds is found to be charge transfer from the planar σ states to the π states.     

Pulsed laser deposition of hexagonal and cubic boron nitride films

Hexagonal and cubic boron nitride films are deposited by pulsed laser ablation from a boron nitride and a boron target using a KrF excimer laser. Hexagonal films are deposited in nitrogen as background gas or with nitrogen/argon ion bombardment at ion-to-arriving-target-atom (I/A) ratios at the substrate below 0.5. Nucleation of the cubic phase takes place exclusively with ion bombardment at I/A ratios above 1.0, which may be reduced down to 0.6 after the completion of the nucleation process. The influence of the parameters of the laser and ion beams on the properties of the hexagonal films are presented. The Vickers microhardness and the intrinsic stress of those films vary in wide ranges of 5 to 25 GPa and 1 to 16 GPa, respectively. Pulsed laser deposited hexagonal boron nitride films show good adhesion to silicon and stainless steel if they are deposited at I/A ratios below 0.5, and can be used as intermediate layers for improving the adhesion of cubic boron nitride films. So far, 0.5 7m thick, nearly phase-pure cubic boron nitride films with good adhesion have been deposited. The microstructural, mechanical, and optical properties of those layer systems are presented and discussed.     

Magnetic behavior and clustering effects in Mn-doped boron nitride sheets

Ab initio calculations are performed in the framework of density functional theory on Mn-doped boron nitride sheets, which are candidates for two-dimensional diluted magnetic semiconductors (DMSs). Each type of substitution reveals a qualitatively different magnetic behavior encompassing ferromagnetic, anti-ferromagnetic and spin glass ordering. The ability of formation of these defects is also discussed. We analyze the dependence of the exchange couplings on the distance between impurities and the typical range and distribution are extracted. Multiple-impurity configurations are considered and the results are mapped on an Ising-type Hamiltonian with higher order exchange interactions, revealing deviations from the standard two-spin models. The percolation of interacting magnetic moments is discussed and the critical concentration is determined for the underlying transition from a ferromagnetic to a super-paramagnetic state. We conclude our study by providing the optimal conditions for doping in order to obtain a ferromagnetic DMS.     

Magnetism and piezoelectricity of hexagonal boron nitride with triangular vacancy

First-principle calculations reveal that the configuration system of hexagonal boron nitride(h-BN) monolayer with triangular vacancy can induce obvious magnetism, contrary to that of the nonmagnetic pristine boron nitride monolayer.Interestingly, the h-BN with boron atom vacancy(VB-BN) displays metallic behavior with a total magnetic moment being 0.46μ_B per cell, while the h-BN with nitrogen atom vacancy(VN-BN) presents a half-metallic characteristic with a total magnetic moment being 1.0μ_B per cell. Remarkably, piezoelectric stress coefficient e_(11) of the VN-BN is about 1.5 times larger than that of pristine h-BN. Furthermore, piezoelectric strain coefficient d_(11)(12.42 pm/V) of the VN-BN is 20 times larger than that of pristine h-BN and also one order of magnitude larger than the value for the h-MoS_2 monolayer, which is mainly due to the spin-down electronic state in the V_N-BN system. Our study demonstrates that the nitrogen atom vacancies can be an efficient route to tailoring the magnetic and piezoelectric properties of h-BN monolayer, which have promising performances for potential applications in nano-electromechanical systems(NEMS) and nanoscale electronics devices.     

六方氮化硼层间气泡制备与压强研究

六方氮化硼(h-BN)具有六角网状晶格结构和高化学机械稳定性,可以用来封装气体并长期保持稳定,适合用作新型信息器件及微纳机电器件的衬底材料,具有巨大的应用前景.近期,科研人员发现氢原子可以无损穿透多层h-BN,在层间形成气泡,可用作微纳机电器件.本文研究了氢等离子体处理时间对h-BN气泡尺寸的影响.发现随着处理时间的延长,气泡尺寸整体变大且分布密集程度会降低.原子力显微镜的测量发现所制备的h-BN气泡具有相似的形貌特征,该特征与h-BN的杨氏模量和层间范德瓦耳斯作用相关.此外,发现微米尺寸气泡的内部压强约为1—2 MPa,纳米尺寸气泡的内部压强可达到GPa量级.     

A low frequency Raman-active vibration of hexagonal boron nitride

Raman spectra of single crystals and powder of hexagonal boron nitride have been measured at room temperature. Two Raman lines due to phonons of 52.5 and 1366 cm^-1 were observed. The 52.5 cm^-1 line, observed for the first time, has been attributed to the shear-type rigid layer mode of the crystal. The force constants related with the vibrations of these modes and their anisotropy are compared with those of graphite.