Spectroscopic properties of Er3+ : Ba0.65Sr0.35TiO nanopowders

Ba0.65Sr0.35TiO2 (BST) nanopowders doped with Er3+ were prepared by sol-gel method. The absorption spectrum and photoluminescence (PL) spectrum of Er3+ : BST nanopowders was measured at room temperature. Based on the Judd-Ofelt theory, the intensity parameters of Er3+ in BST nanopowders were determined, omega2 = 0.993 x 10(-20) cm2, omega4 = 1.665 x 10(-20) cm2 and omega = 0.540 x 10(-20) cm2, and then the values of the line strengths, radiative transition probabilities and branching ratios of Er3+ were calculated. According to the PL spectrum, the emission bands centered at about 522, 545, 654 and 851 nm corresponding to 2H(11/2)-->4S(3/2-->4I(15/2), 4F(9/2)-->4I(15/2), and 4S(3/2-->4I(13/2) transition were observed, and the emission properties were also discussed. The results show that the Er3+ : BST nanomaterials are prospective candidates for applications in new photoelectric devices.     

Structure-dependent vibrational lifetimes of hydrogen in silicon

The lifetimes of the Si-H vibrational stretch modes of the H(*)(2) ( 2062 cm(-1)) and HV.VH((110)) ( 2072.5 cm(-1)) defects in crystalline Si are measured directly by transient bleaching spectroscopy from 10 K to room temperature. The interstitial-type defect H(*)(2) has a lifetime of 4.2 ps at 10 K, whereas the lifetime of the vacancy-type complex HV.VH((110)) is 2 orders of magnitude longer, 295 ps. The temperature dependence of the lifetime of H(*)(2) is governed by TA phonons, while HV.VH((110)) is governed by LA phonons. This behavior is attributed to the distinctly different local structure of these defects and the accompanying local vibrational modes.     

掺饵氢化非晶氧化硅1.54μm发光性质的研究

采用等离子体增强化学汽相沉积技术生长不同氧含量的氢化非晶氧化硅薄膜(a-SiO_{x∶H),离子注入铒及退火后在室温观察到很强的光致发光.当材料中氧硅含量比约为1和 1.76时,分别对应77Ｋ和室温测量时最强的1.54μm光致发光.从15到250Ｋ的变温实验显示 出三个不同的强度与温度变化关系,表明氢化非晶氧化硅中铒离子的能量激发和发光是一个 复杂的过程.提出氢化非晶氧化硅薄膜中发光铒离子来自于富氧区,并对实验现象进行了解 释.氢化非晶氧化硅中铒发光的温度淬灭效应很弱.从15到250Ｋ,光致发光强度减弱约1/2. 关键词： 铒 光致发光 氧含量}     

Photoluminescence of GeO<Subscript>2</Subscript> films containing germanium nanocrystals

Germanium nanocrystals were formed in a GeO₂ film during the process of germanium monoxide gas-phase deposition onto a sapphire substrate and studied by photoluminescence (PL) and Raman scattering spectroscopy. A PL peak in this heterosystem was observed in the visible region at room temperature. The sizes of Ge nanocrystals were estimated from the position of a Raman peak corresponding to scattering by localized optical phonons in germanium. The PL peak position calculated with allowance for the electron and hole size quantization in Ge nanocrystals coincides well with the experimentally observed position of this peak.     

掺Er凝胶玻璃中Er离子发光性质的研究

用溶胶－凝胶方法合成了掺铒的二氧化硅玻璃。在室温下可产生１．５４μｍ波长的红外荧光。实验结果表明：荧光强度随掺杂浓度的不同而改变，并在０．５Ｗ％的掺杂浓度下出现最大值。当温度从４Ｋ升至３００Ｋ时，荧光强度下降了７４％。     

Temperature‐dependent Raman scattering studies of the geometrically frustrated pyrochlores Dy2Ti2O7, Gd2Ti2O7 and Er2Ti2O7

The temperature‐dependent Raman studies of A₂Ti₂O₇(A = Dy, Er, Gd) were performed on single crystals and polycrystalline samples in the 4.2–295 K temperature range. The Raman spectra showed softening of the majority of phonon modes upon cooling in the whole temperature range studied and large decrease of linewidths. These changes have been analyzed in terms of strong third‐order phonon–phonon anharmonic interactions. Moreover, the 312 and 330 cm⁻¹ modes of Er₂Ti₂O₇(Gd₂Ti₂O₇) showed hardening upon cooling down to about 130 K (100 K) and then anomalous softening below this temperature. The observed anomalous behavior of the Raman modes indicates that some important changes occur in these materials at low temperatures. However, the origin of this behavior is still not clear. Copyright © 2008 John Wiley & Sons, Ltd.     

Anomalous electronic Raman scattering in NaxCoO2.yH2O

Raman scattering experiments on NaxCoO2.yH2O single crystals show a broad electronic continuum with a pronounced peak around 100 cm(-1) and a cutoff at approximately 560 cm(-1) over a wide range of doping levels. The electronic Raman spectra in superconducting and nonsuperconducting samples are similar at room temperature, but evolve in markedly different ways with decreasing temperature. For superconducting samples, the low-energy spectral weight is depleted upon cooling below T* approximately 150 K, indicating the opening of a pseudogap that is not present in nonsuperconducting materials. Weak additional phonon modes observed below T* suggest that the pseudogap is associated with charge ordering.     

Enhanced green upconversion emission of Er(3+) through energy transfer by Dy(3+) under 800 nm femtosecond-laser excitation

Er(3+) green upconversion (UC) emission corresponding to the transition of (4)S(3/2) ((2)H(11/2))-->(4)I(15/2) is enhanced in a Er/Dy-codoped LiNbO(3) crystal compared with Er-doped LiNbO(3) under 800 nm femtosecond-laser excitation at room temperature. The upconversion mechanisms are proposed based on spectral, kinetic, and pump-power dependence analyses. The energy-transfer efficiency from Dy(3+)((4)F(9/2)) to Er(3+)((4)F(7/2)) is 33%, which results in the enhancement of green UC emission. This energy transfer is advantageous for the Er(3+) UC emission sensitized by Dy(3+), especially in a low-phonon-energy host matrix.     

Yb掺杂对Er/Yb共掺Al2O3薄膜光致荧光性能的影响

采用反应射频磁控溅射技术,通过调整溅射靶面上金属Er和Yb的面积比例制备出了不同Yb含量的Er／Yb共掺Al2O3薄膜,重点探讨了薄膜制备过程中Er、Yb成分比例控制的可靠性及Yb的掺杂浓度对Er／Yb共掺Al2O3薄膜室温光致荧光谱强度及峰型的影响。利用卢瑟福背散射谱(RBS)和电子能谱(EDX)对薄膜成分进行的分析表明：薄膜中Er、Yb成分的比例与实际的Er、Yb靶面积比基本一致。薄膜经过1000℃退火2h的室温光致发光谱表明：Yb掺杂显著提高了薄膜的光致荧光强度,当Yb／Er靶面积比为4：1时,光致荧光强度和半峰全宽最大。研究结果表明：对于Al2O3薄膜,合适的Yb／Er浓度,不仅可以显著改善薄膜的发光效率,而且可以增加频带带宽。     

Raman scattering study of delafossite magnetoelectric multiferroic compounds: CuFeO2 and CuCrO2

Ultrasonic velocity measurements on the magnetoelectric multiferroic compound CuFeO(2) reveal that the antiferromagnetic transition observed at T(N1) = 14 K might be induced by an R3m --> pseudoproper ferroelastic transition. In that case, the group theory states that the order parameter associated with the structural transition must belong to a two-dimensional irreducible representation E(g) (x(2) - y(2), xy). Since this type of transition can be driven by a Raman E(g) mode, we performed Raman scattering measurements on CuFeO(2) between 5 and 290 K. Considering that the isostructural multiferroic compound CuCrO(2) might show similar structural deformations at the antiferromagnetic transition T(N1) = 24.3 K, Raman measurements have also been performed for comparison. At ambient temperature, the Raman modes in CuFeO(2) are observed at ω(E(g)) = 352 cm(-1) and ω(A(1g)) = 692 cm(-1), while these modes are detected at ω(E(g)) = 457 cm(-1) and ω(A(1g)) = 709 cm(-1) in CuCrO(2). The analysis of the temperature dependence of the modes in both compounds shows that the frequencies of all modes increase with decreasing temperature. This typical behavior is attributed to anharmonic phonon-phonon interactions. These results clearly indicate that none of the Raman active modes observed in CuFeO(2) and CuCrO(2) drive the pseudoproper ferroelastic transitions observed at the Néel temperature T(N1). Finally, a broad band at about 550 cm(-1) observed in the magnetoelectric phase of CuCrO(2) below T(N2) could be associated with magnons.     

白硅钙石的高温高压拉曼光谱研究

利用活塞圆筒装置在1.2 GPa,1 473 K的条件下合成了白硅钙石。采用外加热装置和金刚石压腔结合拉曼光谱分析技术,采集了白硅钙石298,353,463,543,663,773以及873 K温度区间的常压及1 atm～14.36 GPa(常温)压力区间的拉曼谱图。扫描电镜下,该研究合成的样品为结构一致的单一相,颗粒大小为10～20 μm。电子探针分析结果表明,样品的组成为Ca_7.03(2)Mg_0.98(2)Si_3.94(2)O₁₆,该组分完全吻合白硅钙石理论组分。Raman分析结果表明,高温时白硅钙石的拉曼谱图中具有29个振动峰。随着温度的升高,部分振动峰出现了合并或者弱化消失的现象。该现象尤其以800～1 200 cm-1范围内的909,927和950 cm-1振动峰峰位最为明显,这些振动峰分别在873,773以及873 K时弱化消失。据此,白硅钙石的结构在实验温压范围内稳定,且随着温度和压力的升高,其拉曼振动峰峰位分别呈现往低频和高频方向线性飘移的趋势。除此之外,根据高温和高压拉曼实验的结果,分别计算了白硅钙石拉曼振动峰峰位的等压mode-Grüneisen参数和等温mode-Grüneisen参数,其算术平均值分别为1.47(2)和0.45(3)。最后结合高温和高压拉曼实验的结果,计算了白硅钙石的非谐系数,结果表明,Si-O振动模式对于非谐效应的贡献要小于其他振动模式。     

Radiative carrier recombination dependent on temperature and well width of InGaN/GaN single quantum well

Photoluminescence (PL) spectra and time-resolved PL are measured from around 10 to 300 K for the InGaN/GaN single quantum wells (SQWs) with well widths of 1.5, 2.5, 4 and 5 nm. For the SQWs with the well widths of 1.5 and 2.5 nm, the peak position of PL exhibits an S-shaped shift with increasing temperature. The radiative recombination time τ_RAD begins to increase at the temperature for the position to change from the red-shift to the blue-shift. The steep increase of τ_RAD is observed beyond the temperature from the blue-shift to the red-shift. For the SQWs with the well widths of 4 and 5 nm, the peak position of PL exhibits a monotonic red-shift. τ_RAD decreases at first and then increases with temperature. It is about 100-times longer in the low temperature region and about 10-times longer at room temperature as compared with those of the SQWs with narrower widths.     

MgB2超导薄膜的变温拉曼光谱研究

MgB₂作为迄今为止超导转变温度最高的合金超导体,由于其具有结构简单、相干长度长、晶界间不存在弱连接、上临界场很高、电-声散射时间短等特点,MgB₂超导薄膜在电子学领域有着广阔的的应用前景。拉曼光谱是研究电-声子相互作用和超导能带的一种有效方法,且已广泛用于分析MgB₂材料的电子、声子特征以及超导体能带结构,研究表明,样品质量、晶粒尺寸以及测试条件对MgB₂拉曼峰的峰位和峰形影响很大,其中拉曼光谱随温度的变化也是一个研究重点,但目前关于MgB₂变温拉曼光谱的研究,测试的温度范围相对较小,局限在83 K到室温区域或是转变温度附近。研究了大范围温度区间内MgB₂薄膜的拉曼光谱变化,采用混合物理化学沉积法在(0001)SiC衬底上制备了MgB₂多晶薄膜,薄膜的晶粒尺寸约为300 nm,超导转变温度为39.3 K,对其在10～293 K之间的拉曼光谱进行了测试,测量的波数范围为20～1 200 cm-1。变温拉曼光谱的测试结果显示,在高频620 cm-1附近以及低频80和110 cm-1附近存在MgB₂的拉曼峰。经分析,低频区域出现的两个拉曼峰的频率与超导能隙宽度相对应,表明MgB₂的双能隙特性。考虑到MgB₂中四种声子模式的拉曼活性,高频620 cm-1附近的拉曼峰应是由E_2g振动模所贡献的,且随着测试温度的降低,该拉曼峰的峰位未发生明显的偏移,但半高宽显著变小,从293 K时的380.7 cm-1减小到10 K时的155 .7 cm-1,分析表明E_2g声子与电子系统的非线性耦合所引起的非简谐效应可能是拉曼峰半高宽线性变小的主要原因。     

掺铒GaN薄膜的背散射/沟道分析和光致发光研究

采用背散射（RBS）/沟道（channeling）分析和傅里叶变换红外光谱（FT-IR）研究了掺铒G aN薄膜的晶体结构和光致发光（PL）特性.背散射/沟道分析结果表明：随退火温度的升高， 薄膜中辐照损伤减少；但当退火温度达到1000℃，薄膜中的缺陷又明显增加.Er浓度随注入 深度呈现高斯分布.通过沿GaN的<0001>轴方向的沟道分析，对于900℃，30min退火的GaN:Er 样品，Er在晶格中的替位率约76％.光谱研究表明：随退火温度的升高，室温下样品的红外P L峰强度增加；但是当退火温度达到100 关键词： GaN Er 离子束分析 光致发光     

Time-resolved photoluminescence spectra of high-density InGaAs/AlGaAs quantum wire structures

We investigated the temperature dependence of the time-resolved photoluminescence (PL) spectra of high-density InGaAs/AlGaAs quantum wire (QWR) distributed-feedback laser structure on a submicron grating. A red-shift of peak in the time-resolved PL after photo-excitation was observed due to the relaxation of the photo-generated excitons from the entire QWR to localized centers at 10 K. On the other hand, at 60 K, no red-shift in the time-resolved PL spectra was observed since the localization centers are thermally activated and the excitons are delocalized.     

Pressure-induced two-color photoluminescence in MnF(2) at room temperature

A novel two-color photoluminescence (PL) is found in MnF(2) at room temperature under high pressure. Contrary to low-temperature PL, PL at room temperature is unusual in transition-metal concentrated materials like MnF(2), since the deexcitation process at room temperature is fully governed by energy transfer to nonradiative centers. We show that room-temperature PL in MnF(2) originates from two distinct Mn(2+) emissions in the high-pressure cotunnite phase. The electronic structure and the excited-state dynamics are investigated by time-resolved emission and excitation spectroscopy at high pressure.     

Correlation of size and oxygen bonding at the interface of Si nanocrystal in Si–SiO2 nanocomposite: A Raman mapping study

Raman spectroscopy/mapping is used to investigate the variation of Si phonon wavenumbers, i.e., lower wavenumber (LW ~ 495–510 cm⁻¹) and higher wavenumber (HW ~ 515–519 cm⁻¹) phonons, observed in Si–SiO₂ multilayer nanocomposite (NCp) grown using pulsed laser deposition. Sensitivity of Raman spectroscopy as a local probe to surface/interface is effectively used to show that LW and HW phonons originate at surface (Si–SiO₂ interface) and core of Si nanocrystals, respectively. The consistent picture of this understanding is developed using Raman spectroscopy monitored laser heating/annealing and cooling experiment at the site of the desired wavenumber, chosen with the help of Raman mapping. Raman spectra calculations for Si₄₁ cluster with oxygen and hydrogen termination show strong mode at 512 cm⁻¹ for oxygen terminated cluster corresponding to the vibration of surface Si atoms. This supports our attribution of LW phonons to be originating at the Si–SiO₂ surface/interface. These results along with XPS show that nature of interface (oxygen bonding) in turn depends on the size of nanocrystals and LW phonons originate at the surface of smaller Si nanocrystals. The understanding developed can conclude the ongoing debate on large variation in Si phonon wavenumbers of Si–SiO₂ NCps in the literature. Copyright © 2015 John Wiley & Sons, Ltd.     

Enhanced emission of Er from alternately Er doped Si-rich Al2O3 multilayer film with Si nanocrystals as broadband sensitizers

Alternately Er doped Si-rich Al₂O₃ (Er:SRA) multilayer film, consisting of alternate Er-Si-codoped Al₂O₃ (Er:Si:Al₂O₃) and Si-doped Al₂O₃ (Si:Al₂O₃) sublayers, has been synthesized by co-sputtering from separated Er, Si, and Al₂O₃ targets. The dependence of Er³⁺ related photoluminescence (PL) properties on annealing temperatures over 700-1100 °C was studied. The maximum intensity of Er³⁺ PL, about 10 times higher than that of the monolayer film, was obtained from the multilayer film annealed at 950 °C. The enhancement of Er³⁺ PL intensity is attributed to the energy transfer from the silicon nanocrystals in the Si:Al₂O₃ sublayers to the neighboring Er³⁺ ions in the Er:Si:Al₂O₃ sublayers. The PL intensity exhibits a nonmonotonic temperature dependence: with increasing temperature, the integrated intensity almost remains constant from 14 to 50 K, then reaches maximum at 225 K, and slightly increases again at higher temperatures. Meanwhile, the PL integrated intensity at room temperature is about 30% higher than that at 14 K.     

Phonon spectra of stoichiometric rare-earth compound of EuGa2S4

Investigations of EuGa₂S₄ have been done on the photoluminescence (PL) related to the transition between 4f⁶5d and 4f⁷ configuration of the Eu²⁺ ion and its excitation (PLE) spectra, Raman scattering and infrared absorption. The energies of phonons coupled to the ground and the excited states of the transition are analyzed to be 34 and 19 meV from the shapes of the PL and PLE bands, respectively. The former corresponds to the energy of the Raman line showing the highest intensity. The latter is close to the value obtained from analysis of the temperature dependence of the half width of the PL band. These correspondences indicate that the relevant emission of EuGa₂S₄ surely has phonon-terminated character.     

First and second order Raman scattering in GaP to 128 kbar

One- and two-phonon room temperature Raman spectra of GaP were measured to 128 kbar using a diamond-anvil pressure cell. Linear and quadratic pressure coefficients were determined for phonons at Γ, L, (X→K), and Σ. The results suggest possible “soft” mode behavior for TA(L) and TA(X→K) phonons.