Strain-assisted spin manipulation in a quantum well

We show that the efficiency of manipulating electron spins in semiconductor quantum wells can be enhanced by tuning strain strengths. The combined effects of intrinsic and strain-induced spinorbit couplings vary for different quantum wells, which provide an alternative route to understand the experimental phenomena brought in by the strain. The contribution to the electron-dipole-spin-resonance intensity induced by the strain can be changed through adjusting the direction of the ac electric field in the x-y plane of the quantum well and tuning the strain strengths.     

Anisotropic spin diffusion in a semiconductor quantum well

We show that spin diffusion of an inhomogeneous spin-density distribution in an asymmetric zinc-blende semiconductor quantum well is anisotropic in coordinate space, if the D’yakonov–Perel’spin-relaxation mechanism is dominant. This anisotropy depends on the relation between the Dresselhaus and Rashba contributions to the spin splitting and reaches its maximum when both contributions are equal in magnitude. Under this condition, the temporal behavior of spin density strongly depends on the relation between the initial spatial extent of the spin packet and spin diffusion length.     

Polariton spin beats in semiconductor quantum well microcavities

Time-resolved Kerr (Faraday) rotation experiments allow for the observation of polariton spin beats in both InGaAs and CdMnTe quantum well (QW) microcavities. The existence of these beats is an unambiguous manifestation of the coherent energy exchange between exciton and photon components of polariton states created by a circularly polarized and spectrally wide femtosecond laser pulse. The polariton states are also shown to be split into a linearly polarized doublet. This splitting is responsible for the polarization transfer between linearly and circularly polarized states. In a highest-quality sample, the resulting spin dynamics could be detected.     

Laser-induced quantum coherence in a semiconductor quantum well

The phenomenon of electromagnetically induced quantum coherence is demonstrated between three confined electron subband levels in a quantum well which are almost equally spaced in energy. Applying a strong coupling field, two-photon resonant with the 1-3 intersubband transition, produces a pronounced narrow transparency feature in the 1-2 absorption line. This result can be understood in terms of all three states being simultaneously driven into "phase-locked" quantum coherence by a single coupling field. We describe the effect theoretically with a density matrix method and an adapted linear response theory.     

Carrier collection in a semiconductor quantum well

Data are presented showing that a GaAs quantum well, sandwiched between two epitaxial Al_xGa_1-xAs(x ～ 0.4) confining layers, loses its effectiveness as a collector of excess carriers and as a source of recombination radiation for well dimensions L_z < 100 Å. It is shown that this behavior is expected because of the difficulty in scattering carriers to the bottom of the quantum well as L_z → l_p, the path length for scattering (LO phonon).     

Optical pump-probe measurements of local nuclear spin coherence in semiconductor quantum wells

We demonstrate local manipulation and detection of nuclear spin coherence in semiconductor quantum wells by an optical pump-probe technique combined with pulse rf NMR. The Larmor precession of photoexcited electron spins is monitored by time-resolved Kerr rotation (TRKR) as a measure of nuclear magnetic field. Under the irradiation of resonant pulsed rf magnetic fields, Rabi oscillations of nuclear spins are traced by TRKR signals. The intrinsic coherence time evaluated by a spin-echo technique reveals the dependence on the orientation of the magnetic field with respect to the crystalline axis as expected by the nearest neighbor dipole-dipole interaction.     

Spin manipulation in semiconductor quantum dots qubit

Thirty years of effort in semiconductor quantum dots has resulted in significant developments in the control of spin quantum bits(qubits). The natural two-energy level of spin states provides a path toward quantum information processing. In particular, the experimental implementation of spin control with high fidelity provides the possibility of realizing quantum computing. In this review, we will discuss the basic elements of spin qubits in semiconductor quantum dots and summarize some important experiments that have demonstrated the direct manipulation of spin states with an applied electric field and/or magnetic field. The results of recent experiments on spin qubits reveal a bright future for quantum information processing.     

Slow light propagation via quantum coherence in a semiconductor quantum well

With the Schrödinger equations, we investigate the low-intensity light pulse propagation through a semiconductor quantum wells. Through studying the dispersion and absorption properties of the weak probe field, it is shown that slow light propagation is observed in this system. From the view point of practical purpose, it is more advantageous than its corresponding atomic system. Such investigation of slow light propagation may lead to important practical applications in semiconductor quantum information.     

Coherence length of excitons in a semiconductor quantum well

We report on the first experimental determination of the coherence length of excitons in semiconductors using the combination of spatially resolved photoluminescence with phonon sideband spectroscopy. The coherence length of excitons in ZnSe quantum wells is determined to be 300-400 nm, about 25-30 times the exciton de Broglie wavelength. With increasing exciton kinetic energy, the coherence length decreases slowly. The discrepancy between the coherence lengths measured and calculated by considering only the acoustic-phonon scattering suggests an important influence of static disorder.     

Photocurrent and spin manipulation in quantum dots

In this paper we use a density matrix formalism to model the spin photocurrent obtained from a single self-assembled quantum dot photodiode under the influence of an applied strong polarized electromagnetic pulse and a gate voltage. We show that the degree of polarization of the output photocurrent generated by a circularly polarized pulse in a strongly anisotropic quantum dot can be switched as we increase the pulse intensity. A similar effect is observed in a quantum dot with weak anisotropic electron–hole exchange interaction by using an elliptically polarized pulse. In the latter, a shorter pulse is needed, which creates an effective exchange channel through the biexciton. This phenomenon can be used as a dynamical switch to invert the spin-polarization of the extracted current.     

Andreev quantum dots for spin manipulation

We investigate the feasibility of manipulating individual spin in a superconducting junction where Bogoliubov quasiparticles can be trapped in discrete Andreev levels. We call this system an Andreev quantum dot (AQD) to be contrasted with a common semiconductor quantum dot. We show that the AQD can be brought into a spin-1/2 state. The coupling between the spin and superconducting current facilitates manipulation and measurement of this state. We demonstrate that one can operate two inductively coupled AQDs as a XOR gate; this enables quantum computing applications.     

Optical nutation in a magnetized semiconductor quantum well structure

Using the semiclassical coherent radiation—semiconductor interaction model, optical nutation has been analysed in aGaAs / Al_xGa_1 − xAs quantum well structure (QWS) assumed to be immersed in a moderately strong magnetic field and irradiated by a not-too-strong near band gap resonant femtosecond pulsed Ti–sapphire laser. The finite potential well depth of the QWS and the Wannier–Mott excitonic structure of the crystal absorption edge is taken into account. The excitation intensity is assumed to be below the Mott transition where the various many-body effects have been neglected with adequate reasoning. Numerical analysis made for a GaAs quantum well of thickness  ∼  100 Åand the confining layers ofAl_xGa_1 − xAs withx =  0.3 at intensity I ≤  5  ×  10⁶Wcm ^− 2reveals that the real and imaginary parts of the transient complex-induced polarization are enhanced with an increase in the magnetic field and their ringing behaviour confirms the occurrence of optical nutation in the QWS.     

Two-dimensional probe absorption spectrum in a semiconductor quantum well

We investigate the two-dimensional (2D) probe absorption spectrum in a semiconductor quantum well driven by two orthogonal standing-wave lasers. It is found that, due to the position-dependent quantum interference, the 2D spatial distribution of probe absorption spectrum can be easily controlled via adjusting the system parameters. Thus, our scheme shows the underlying probability for the applications in solid-state optic communication and transmission.     

Nuclear spin switch in semiconductor quantum dots

We show that by illuminating an InGaAs/GaAs self-assembled quantum dot with circularly polarized light, the nuclei of atoms constituting the dot can be driven into a bistable regime, in which either a thresholdlike enhancement or reduction of the local nuclear field by up to 3 T can be generated by varying the pumping intensity. The excitation power threshold for such a nuclear spin "switch" is found to depend on both the external magnetic and electric fields. The switch is shown to arise from the strong feedback of the nuclear spin polarization on the dynamics of the spin transfer from electrons to the nuclei of the dot.     

Control of two-dimensional electron population in a semiconductor quantum well

We investigate the two-dimensional (2D) electron population in a semiconductor quantum well. It is found that, due to the position-dependent quantum interference, the 2D spatial distribution of electron population can be easily controlled via adjusting the system parameters. Thus, our scheme shows the underlying probability for the applications in solid-state optoelectronics.     

Optical manipulation of a single Mn spin in a CdTe quantum dot

In this paper we demonstrate optical writing of information on the spin state of a single Mn ion embedded in a CdTe/ZnTe quantum dot. As a tool for Mn spin orientation we use a spin-conserving transfer of excitation between two coupled quantum dots, one of them containing the Mn ion. Excitons created by circularly polarized light act on the Mn ion via the sp–d exchange interaction and orient its spin. The magnetic field of 1 T strongly enhances the orientation efficiency due to suppression of fast Mn spin relaxation mechanisms. Dynamics of the Mn spin under polarized excitation was measured in a time-resolved experiment, in which the intensity and polarization of excitation were modulated. Observed dynamics of the Mn spin can be described with a simple rate equation model.     

Electron paramagnetic resonance study of the nuclear spin dynamics in an AlAs quantum well

The nuclear spin dynamics in an asymmetrically doped 16-nm AlAs quantum well grown along the [001] direction has been studied experimentally using the time decay of the Overhauser shift of paramagnetic resonance of conduction electrons. The nonzero spin polarization of nuclei causing the initial observed Overhauser shift is due the relaxation of the nonequilibrium spin polarization of electrons into the nuclear subsystem near electron paramagnetic resonance owing to the hyperfine interaction. The measured relaxation time of nuclear spins near the unity filling factor is (530 ± 30) min at the temperature T = 0.5 K. This value exceeds the characteristic spin relaxation times of nuclei in GaAs/AlGaAs heterostructures by more than an order of magnitude. This fact indicates the decrease in the strength of the hyperfine interaction in the AlAs quantum well in comparison with GaAs/AlGaAs heterostructures.