Nuclear spin diffusion effects in optically pumped quantum wells

We studied the influence of the nuclear spin diffusion on the dynamical nuclear polarization of low dimensional nanostructures subject to optical pumping. Our analysis shows that the induced nuclear spin polarization in semiconductor nanostructures will develop both a time and position dependence due to a nonuniform hyperfine interaction as a result of the geometrical confinement provided by the system. In particular, for the case of semiconductor quantum wells, nuclear spin diffusion is responsible for a nonzero nuclear spin polarization in the quantum well barriers. As an example we considered a 57 Å GaAs square quantum well and a 1000 Å Al _x Ga_1?x As parabolic quantum well both within 500 Å Al_0.4Ga_0.6As barriers. We found that the average nuclear spin polarization in the quantum well barriers depends on the strength of the geometrical confinement provided by the structure and is characterized by a saturation time of the order of few hundred seconds. Depending on the value of the nuclear spin diffusion constant, the average nuclear spin polarization in the quantum well barriers can get as high as 70% for the square quantum well and 40% for the parabolic quantum well. These results should be relevant for both time resolved Faraday rotation and optical nuclear magnetic resonance experimental techniques.     

Beyond the T1 limit: singlet nuclear spin states in low magnetic fields

Low-field nuclear spin singlet states may be used to store nuclear spin order in a room temperature liquid for a time much longer than the spin-lattice relaxation time constant T1. The low-field nuclear spin singlets are unaffected by intramolecular dipole-dipole relaxation, which is generally the predominant relaxation mechanism. We demonstrate storage of nuclear spin order for more than 10 times longer than the measured value of T1. This phenomenon may facilitate the development of nuclear spin hyperpolarization methods and may allow the study of motional processes which occur too slowly for existing NMR techniques. This is the first time that the memory of nuclear spins has been extended well beyond the T1 limit in a system lacking intrinsic magnetic equivalence.     

Optical manipulation of nuclear spin by a two-dimensional electron gas

Conduction electrons are used to optically polarize, detect, and manipulate nuclear spin in a (110) GaAs quantum well. Using optical Larmor magnetometry, we find that nuclear spin can be polarized along or against the applied magnetic field, depending on field polarity and tilting of the sample with respect to the optical pump beam. Periodic optical excitation of the quantum-confined electron spin reveals a complete spectrum of optically induced and quadrupolar-split nuclear resonances, as well as evidence for Deltam = 2 transitions.     

Scalable spin amplification with a gain over a hundred

We propose a scalable and practical implementation of spin amplification which does not require individual addressing nor a specially tailored spin network. We have demonstrated a gain of 140 in a solid-state nuclear spin system of which the spin polarization has been increased to 0.12 using dynamic nuclear polarization with photoexcited triplet electron spins. Spin amplification scalable to a higher gain opens the door to the single spin measurement for a readout of quantum computers as well as practical applications of nuclear magnetic resonance spectroscopy to infinitesimal samples which have been concealed by thermal noise.     

Quantum readout and fast initialization of nuclear spin qubits with electric currents

Nuclear spin qubits have the longest coherence times in the solid state, but their quantum readout and initialization is a great challenge. We present a theory for the interaction of an electric current with the nuclear spins of donor impurities in semiconductors. The theory yields a sensitivity criterion for quantum detection of nuclear spin states using electrically detected magnetic resonance, as well as an all-electrical method for fast nuclear spin qubit initialization.     

Effects of inversion asymmetry on electron-nuclear spin coupling in semiconductor heterostructures: possible role of spin-orbit interactions

We show that electron-nuclear spin coupling in semiconductor heterostructures is strongly modified by their potential inversion asymmetry. This is demonstrated in a GaAs quantum well, where we observe that the current-induced nuclear spin polarization at Landau-level filling factor nu=2/3 is completely suppressed when the quantum well is made largely asymmetric with gate voltages. Furthermore, we find that the nuclear spin relaxation rate is also modified by the potential asymmetry. These findings strongly suggest that even a very weak Rashba spin-orbit interaction can play a dominant role in determining the electron-nuclear spin coupling.     

Theory of the electron and nuclear spin coherence times of shallow donor spin qubits in isotopically and chemically purified zinc oxide

In this article, I present a theoretical study of the electron and nuclear spin coherence times of shallow donor spin qubits in zinc oxide (ZnO) at low temperature. The influence of different spin-phonon processes as well as different spin-spin processes on the spin coherence time of shallow donors in ZnO is considered, both in the case of an electron spin qubit and in the case of a nuclear spin qubit encoded on a shallow donor. It is estimated that the electron spin coherence time of an isolated indium shallow donor in natural quasi-intrinsic ZnO is on the order of hundreds of microseconds, limited by the nuclear spectral diffusion process. The electron spin coherence time of an isolated indium shallow donor can be extended to few milliseconds in isotopically and chemically purified quasi-intrinsic ZnO. In this optimal case, the electron spin coherence time of an isolated indium shallow donor is only limited by a spin-lattice decoherence process. It is also estimated that the nuclear spin coherence time of an isolated indium shallow donor in natural quasi-intrinsic ZnO is on the order of hundreds of milliseconds, limited by the nuclear spectral diffusion process. The nuclear spin coherence time of an isolated indium shallow donor can be extended to few seconds in isotopically and chemically purified quasi-intrinsic ZnO. In this optimal case, the nuclear spin coherence time of an isolated indium shallow donor is only limited by the cross relaxation decoherence process. This study thus shows the great potential of electron and nuclear spin qubits encoded on shallow donors in isotopically and chemically purified quasi-intrinsic ZnO for the implementation of quantum processor and/or quantum memories.     

Nonequilibrium nuclear-electron spin dynamics in semiconductor quantum dots

We study the spin dynamics in charged quantum dots in the situation where the resident electron is coupled to only about 200 nuclear spins and where the electron spin splitting induced by the Overhauser field does not exceed markedly the spectral broadening. The formation of a dynamical nuclear polarization as well as its subsequent decay by the dipole-dipole interaction is directly resolved in time. Because not limited by intrinsic nonlinearities, almost complete nuclear polarization is achieved, even at elevated temperatures. The data suggest a nonequilibrium mode of nuclear polarization, distinctly different from the spin temperature concept exploited on bulk semiconductors.     

Electrical readout of the local nuclear polarization in the quantum Hall effect: a hyperfine battery

It is demonstrated that the now well-established "flip-flop" mechanism of spin exchange between electrons and nuclei in the quantum Hall effect can be reversed. We use a sample geometry which utilizes separately contacted edge states to establish a local nuclear spin polarization--close to the maximum value achievable--by driving a current between electron states of different spin orientation. When the externally applied current is switched off, the sample exhibits an output voltage of up to a few tenths of a mV, which decays with a time constant typical for the nuclear spin relaxation. The surprising fact that a sample with a local nuclear spin polarization can act as a source of energy and that this energy is well above the nuclear Zeeman splitting is explained by a simple model which takes into account the effect of a local Overhauser shift on the edge state reconstruction.     

Persistent narrowing of nuclear-spin fluctuations in InAs quantum dots using laser excitation

We demonstrate the suppression of nuclear-spin fluctuations in an InAs quantum dot and measure the timescales of the spin narrowing effect. By initializing for tens of milliseconds with two continuous wave diode lasers, fluctuations of the nuclear spins are suppressed via the hole-assisted dynamic nuclear polarization feedback mechanism. The fluctuation narrowed state persists in the dark (absent light illumination) for well over 1 s even in the presence of a varying electron charge and spin polarization. Enhancement of the electron spin coherence time (T2*) is directly measured using coherent dark state spectroscopy. By separating the calming of the nuclear spins in time from the spin qubit operations, this method is much simpler than the spin echo coherence recovery or dynamic decoupling schemes.     

现代应用物理系的原子核结构实验研究简介

对近年来清华大学现代应用物理系开展的原子核结构实验研究的情况作了介绍,着重对所研究过的核高自旋态（包括个别核的低自旋态）结构特性进行了简述．The experimental research on nuclear structure in Department of Modern Applied Physics, Tsinghua University has been summarized. The main research results in high spin states of nuclear structure, as well as some low spin states, have been reported.     

Optical detection and ionization of donors in specific electronic and nuclear spin States

We resolve the remarkably sharp bound exciton transitions of highly enriched 28Si using a single-frequency laser and photoluminescence excitation spectroscopy, as well as photocurrent spectroscopy. Well-resolved doublets in the spectrum of the 31P donor reflect the hyperfine coupling of the electronic and nuclear donor spins. The optical detection of the nuclear spin state, and selective pumping and ionization of donors in specific electronic and nuclear spin states, suggests a number of new possibilities which could be useful for the realization of silicon-based quantum computers.     

Electron paramagnetic resonance study of the nuclear spin dynamics in an AlAs quantum well

The nuclear spin dynamics in an asymmetrically doped 16-nm AlAs quantum well grown along the [001] direction has been studied experimentally using the time decay of the Overhauser shift of paramagnetic resonance of conduction electrons. The nonzero spin polarization of nuclei causing the initial observed Overhauser shift is due the relaxation of the nonequilibrium spin polarization of electrons into the nuclear subsystem near electron paramagnetic resonance owing to the hyperfine interaction. The measured relaxation time of nuclear spins near the unity filling factor is (530 ± 30) min at the temperature T = 0.5 K. This value exceeds the characteristic spin relaxation times of nuclei in GaAs/AlGaAs heterostructures by more than an order of magnitude. This fact indicates the decrease in the strength of the hyperfine interaction in the AlAs quantum well in comparison with GaAs/AlGaAs heterostructures.     

Evidence for skyrmion crystallization from NMR relaxation experiments

A resistively detected NMR technique was used to probe the two-dimensional electron gas in a GaAs/AlGaAs quantum well. The spin-lattice relaxation rate (1/T(1)) was extracted at near complete filling of the first Landau level by electrons. The nuclear spin of (75)As is found to relax much more efficiently with T --> 0 and when a well developed quantum Hall state with R(xx) approximately 0 occurs. The data show a remarkable correlation between the nuclear spin relaxation and localization. This suggests that the magnetic ground state near complete filling of the first Landau level may contain a lattice of topological spin texture, i.e., a Skyrmion crystal.     

Generating entanglement and squeezed states of nuclear spins in quantum dots

We present a scheme for achieving coherent spin squeezing of nuclear spin states in semiconductor quantum dots. The nuclear polarization dependence of the electron spin resonance generates a unitary evolution that drives nuclear spins into a collective entangled state. The polarization dependence of the resonance generates an area-preserving, twisting dynamics that squeezes and stretches the nuclear spin Wigner distribution without the need for nuclear spin flips. Our estimates of squeezing times indicate that the entanglement threshold can be reached in current experiments.     

Nuclear and ion spins in semiconductor nanostructures

Spin interactions are studied between conduction band electrons in GaAs heterostructures and local moments, specifically the spins of constituent lattice nuclei and of partially filled electronic shells of impurity atoms. Nuclear spin polarizations are addressed through the contact hyperfine interaction resulting in the development of a method for high-field optically detected nuclear magnetic resonance sensitive to 10⁸ nuclei. This interaction is then used to generate nuclear spin polarization profiles within a single parabolic quantum well; the position of these nanometer-scale sheets of polarized nuclei can be shifted along the growth direction using an externally applied electric field. In order to directly investigate ion spin dynamics, doped GaMnAs quantum wells are fabricated in the regime of very low Mn concentrations. Measurements of coherent electron spin dynamics show an antiferromagnetic exchange between s-like conduction band electrons and electrons localized in the d-shell of the Mn impurities, which varies as a function of well width.     

Dynamic Nuclear Polarization in III–V Semiconductors

We report on electron spin resonance, nuclear magnetic resonance and Overhauser shift experiments on two of the most commonly used III–V semiconductors, GaAs and InP. Localized electron centers in these semiconductors have extended wavefunctions and exhibit strong electron–nuclear hyperfine coupling with the nuclei in their vicinity. These interactions not only play a critical role in electron and nuclear spin relaxation mechanisms, but also result in transfer of spin polarization from the electron spin system to the nuclear spin system. This transfer of polarization, known as dynamic nuclear polarization (DNP), may result in an enhancement of the nuclear spin polarization by several orders of magnitude under suitable conditions. We determine the critical range of doping concentration and temperature conducive to DNP effects by studying these semiconductors with varying doping concentration in a wide temperature range. We show that the electron spin system in undoped InP exhibits electric current-induced spin polarization. This is consistent with model predictions in zinc-blende semiconductors with strong spin–orbit effects.     

Low-energy electronic spin excitations between filling factors ν=1 and studied by optically detected nuclear magnetic resonance

We report measurements of the spin relaxation time (T_1n) for nuclei in the potential well confining a high-mobility two-dimensional electron system at a single GaAs–GaAlAs heterojunction. At low temperatures nuclear spin relaxation is dominated by electron–nuclear spin scattering: we find that T_1n displays sharp maxima at incompressible states throughout the hierarchy of the fractional quantum Hall effect. This behaviour is consistent with the existence of low-energy spin excitations only where the electron system is compressible. Our measurements also provide evidence for a gap in the spin excitation spectrum at .     

Electron spin decoherence in isotope-enriched silicon

Silicon is promising for spin-based quantum computation because nuclear spins, a source of magnetic noise, may be eliminated through isotopic enrichment. Long spin decoherence times T2 have been measured in isotope-enriched silicon but come far short of the T2=2T1 limit. The effect of nuclear spins on T2 is well established. However, the effect of background electron spins from ever present residual phosphorus impurities in silicon can also produce significant decoherence. We study spin decoherence decay as a function of donor concentration, 29Si concentration, and temperature using cluster expansion techniques specifically adapted to the problem of a sparse dipolarly coupled electron spin bath. Our results agree with the existing experimental spin echo data in Si:P and establish the importance of background dopants as the ultimate decoherence mechanism in isotope-enriched silicon.