铟磷共掺杂p型氧化锌薄膜形成机理和性质

利用射频磁控溅射在石英衬底上生长出铟磷共掺氧化锌薄膜(ZnO ∶ In,P),所用靶材为掺杂五氧化二磷(P₂O₅)和氧化铟(In₂O₃)的氧化锌(ZnO)陶瓷靶,掺杂质量分数分别为1.5%和0.3%,溅射气体为Ar和O₂的混合气体。原生ZnO薄膜是绝缘的, 600 ℃退火5 min后导电类型为n型,而800 ℃退火5 min后为p型。p型ZnO薄膜的电阻率、载流子浓度和霍尔迁移率分别为12.4 Ω·cm, 1.6×10¹⁷ cm^-3 和3.29 cm²·V^-1·s^-1。X射线衍射测量结果表明所有样品都只有(002)衍射峰,并与相同条件下生长的未掺杂ZnO相比向大角度方向偏移,意味着In和P都占据Zn位。XPS测试结果表明在共掺ZnO薄膜中P不是取代O而是取代Zn。因此,铟磷共掺ZnO薄膜中,In和P都取代Zn,并且P_Zn与2个锌空位(V_Zn)形成P_Zn-2V_Zn复合受主,薄膜表现为p型。     

Photoluminescence and positron annihilation spectroscopic investigation on a H(+) irradiated ZnO single crystal

Low temperature photoluminescence and room temperature positron annihilation spectroscopy have been employed to investigate the defects incorporated by 6?MeV H(+) ions in a hydrothermally grown ZnO single crystal. Prior to irradiation, the emission from donor bound excitons is at 3.378?eV (10?K). The irradiation creates an intense and narrow emission at 3.368?eV (10?K). The intensity of this peak is nearly four times that of the dominant near band edge peak of the pristine crystal. The characteristic features of the 3.368?eV emission indicate its origin as a 'hydrogen at oxygen vacancy' type defect. The positron annihilation lifetime measurement reveals a single component lifetime spectrum for both the unirradiated (164?±?1?ps) and irradiated crystal (175?±?1?ps). It reflects the fact that the positron lifetime and intensity of the new irradiation driven defect species are a little higher compared to those in the unirradiated crystal. However, the estimated defect concentration, even considering the high dynamic defect annihilation rate in ZnO, comes out to be ～4?×?10(17)?cm(-3) (using SRIM software). This is a very high defect concentration compared to the defect sensitivity of positron annihilation spectroscopy. A probable reason is the partial filling of the incorporated vacancies (positron traps), which in ZnO are zinc vacancies. The positron lifetime of ～175?ps (in irradiated ZnO) is consistent with recent theoretical calculations for partially hydrogen-filled zinc vacancies in ZnO. Passivation of oxygen vacancies by hydrogen is also reflected in the photoluminescence results. A possible reason for such vacancy filling (at both Zn and O sites) due to irradiation has also been discussed.     

Nature of native defects in ZnO

This study revealed the nature of native defects and their roles in ZnO through positron annihilation and optical transmission measurements. It showed oxygen vacancies are the origin for the shift in the optical absorption band that causes the red or orange coloration. It also revealed experimental evidence that the donor nature of oxygen vacancy is approximately 0.7 eV. In addition, this work showed the Zn interstitial was not the donor in the as-grown ZnO and supported recent calculations that predicted hydrogen in an oxygen vacancy forms multicenter bonds and acts as a shallow donor.     

Vacancy defects in (Zn, Mn)O

We have used positron annihilation spectroscopy to study the vacancy defects in (Zn, Mn)O crystals grown by chemical vapor transport (CVT). Our results show that Zn vacancies are present in both as-grown and high temperature annealed ZnO and Zn_0.985Mn_0.015O. In addition, we observe O vacancies in ZnO with no Mn. After annealing in O₂ at 1000 C, there is no change in the vacancy distribution in ZnO, while the Zn vacancy concentration increases by an order of magnitude in Zn_0.985Mn_0.015O.     

Enhanced pressure dependence of magnetic exchange in A2+[V2]O4 spinels approaching the itinerant electron limit

We report a systematic enhancement of the pressure dependence of T(N) in A(2+)[V(2)]O(4) spinels as the V-V separation approaches the critical separation for a transition to itinerant-electron behavior. An intermediate phase between localized and itinerant-electron behavior is identified in Zn[V(2)]O(4) and Mg[V(2)]O(4) exhibiting mobile holes as large polarons. Partial electronic delocalization, cooperative ordering of V-V pairs in Zn[V(2)]O(4) below T(s) approximately T(N) and dT(N)/dP<0, signals that lattice instabilities associated with the electronic crossover are a universal phenomenon.     

Photoluminescence of ZnO nanowires dependent on O2 and Ar annealing

High-purity ZnO nanowires have been synthesized on Si substrates without the presence of a catalyst at 600 °C by a simple thermal vapor technique. Photoluminescence (PL) spectra of the annealed samples at 900 °C under oxygen and argon gases have been investigated. After O₂ or Ar annealing, the PL visible-emission intensity that is related to intrinsic defects (oxygen vacancies) is greatly reduced compared with as-grown ZnO nanowires because the oxygen-gas ions or oxygen interstitials diffuse into the oxygen vacancies during annealing process. The blue-band peak of the O₂- or Ar-annealed ZnO naonowires is also smaller than the green-band peak in the visible broadband because of the reduction of oxygen vacancies. Therefore, the main intrinsic defects (oxygen vacancies) of as-grown ZnO nanowires can be reduced by O₂ or Ar annealing, which is an important procedure for the development of advanced optoelectronic ZnO nanowire devices.     

Doping by large-size-mismatched impurities: the microscopic origin of arsenic- or antimony-doped p-type zinc oxide

Based on first-principles calculations, a model for large-size-mismatched group-V dopants in ZnO is proposed. The dopants do not occupy the O sites as is widely perceived, but rather the Zn sites: each forms a complex with two spontaneously induced Zn vacancies in a process that involves fivefold As coordination. Moreover, an As(Zn)-2V(Zn) complex may have lower formation energy than any of the parent defects. Our model agrees with the recent observations that both As and Sb have low acceptor-ionization energies and that to obtain p-type ZnO requires O-rich growth or annealing conditions.     

Defects in room-temperature ferromagnetic Cu-doped ZnO films probed by x-ray absorption spectroscopy

We report a comprehensive study of the defects in room-temperature ferromagnetic (RTFM) Cu-doped ZnO thin films using x-ray absorption spectroscopy. The films are doped with 2 at.% Cu, and are prepared by reactive magnetron sputtering (RMS) and pulsed laser deposition (PLD), respectively. The results reveal unambiguously that atomic point defects exist in these RTFM thin films. The valence states of the Cu ions in both films are 2(+). In the film prepared by PLD, the oxygen vacancies (V(O)) form around both Zn ions and Cu ions in the hexagonal wurtzite structure. Upon annealing of the film in O(2), the V(O) population reduces and so does the RTFM. In the film prepared by RMS, the V(O)s around Cu ions are not detected, and the V(O) population around Zn ions is also smaller than in the PLD-prepared film. However, zinc vacancies (V(Zn)) are evidenced. Given the low doping level of spin-carrying Cu ions, these results provide strong support for defect-mediated ferromagnetism in Cu-doped ZnO thin films.     

Influence of reducing anneal on the ferromagnetism in single crystalline Co-doped ZnO thin films

This paper reports that the high-quality Co-doped ZnO single crystalline films have been grown on $a$-plane sapphire substrates by using molecular-beam epitaxy. The as-grown films show high resistivity and non-ferromagnetism at room temperature, while they become good conductive and ferromagnetic after annealing in the reducing atmosphere either in the presence or absence of Zn vapour. The x-ray absorption studies indicate that all Co ions in these samples actually substituted into the ZnO lattice without formatting any detectable secondary phase. Compared with weak ferromagnetism (0.16~$\mu _{\rm B}$/Co$^{2 + })$ in the Zn6110M, 7550P, 7280E, 7870Dhttp://cpb.iphy.ac.cn/CN/10.1088/1674-1056/19/5/056101https://cpb.iphy.ac.cn/CN/article/downloadArticleFile.do?attachType=PDF&id=111756Co-doped ZnO, diluted magnetic semiconductors, x-ray absorption fine structure, single crystalline thin filmsProject partially supported by National Science Foundation of China (Grant No.~10804017), National Science Foundation of Jiangsu Province of China (Grant No.~BK2007118), Research Fund for the Doctoral Program of Higher Education of China (Grant No.~20070286037), Cyanine-Project Foundation of Jiangsu Province of China (Grant No.~1107020060), Foundation for Climax Talents Plan in Six-Big Fields of Jiangsu Province of China (Grant No.~1107020070) and New Century Excellent Talents in University (NCET-05-0452).This paper reports that the high-quality Co-doped ZnO single crystalline films have been grown on $a$-plane sapphire substrates by using molecular-beam epitaxy. The as-grown films show high resistivity and non-ferromagnetism at room temperature, while they become good conductive and ferromagnetic after annealing in the reducing atmosphere either in the presence or absence of Zn vapour. The x-ray absorption studies indicate that all Co ions in these samples actually substituted into the ZnO lattice without formatting any detectable secondary phase. Compared with weak ferromagnetism (0.16~$\mu _{\rm B}$/Co$^{2 + })$ in the Zn$_{0.95}$Co$_{0.05}$O single crystalline film with reducing annealing in the absence of Zn vapour, the films annealed in the reducing atmosphere with Zn vapour are found to have much stronger ferromagnetism (0.65~$\mu _{\rm B}$/Co$^{2 + })$ at room temperature. This experimental studies clearly indicate that Zn interstitials are more effective than oxygen vacancies to activate the high-temperature ferromagnetism in Co-doped ZnO films, and the corresponding ferromagnetic mechanism is discussed.Co-doped;ZnO;diluted;magnetic;semiconductors;x-ray;absorption;fine;structure;single;crystalline;thin;filmsThis paper reports that the high-quality Co-doped ZnO single crystalline films have been grown on a-plane sapphire substrates by using molecular-beam epitaxy.The as-grown films show high resistivity and non-ferromagnetism at room temperature,while they become more conductive and ferromagnetic after annealing in the reducing atmosphere either in the presence or absence of Zn vapour.The x-ray absorption studies indicate that all Co ions in these samples actually substituted into the ZnO lattice without formatting any detectable secondary phase.Compared with weak ferromagnetism(0.16 μB/Co2+) in the Zn0.95Co0.05O single crystalline film with reducing annealing in the absence of Zn vapour,the films annealed in the reducing atmosphere with Zn vapour are found to have much stronger ferromagnetism(0.65 μB/Co2+) at room temperature.This experimental studies clearly indicate that Zn interstitials are more effective than oxygen vacancies to activate the high-temperature ferromagnetism in Co-doped ZnO films,and the corresponding ferromagnetic mechanism is discussed.     

Magnetism without magnetic ions: percolation, exchange, and formation energies of magnetism-promoting intrinsic defects in CaO

We investigate theoretically the prospects of ferromagnetism being induced by cation vacancies in nonmagnetic oxides. A single Ca vacancy V(0)(Ca) has a magnetic moment due to its open-shell structure but the ferromagnetic interaction between two vacancies extends only to four neighbors or less. To achieve magnetic percolation on a fcc lattice with such an interaction range one needs a minimum of 4.9% vacancies, or a concentration 1.8 x 10(21) cm(-3). Total-energy calculations for CaO show, however, that due to the high vacancy formation energy even under the most favorable growth conditions one can not obtain more than 0.003% or 10(18) cm(-3) vacancies at equilibrium, showing that a nonequilibrium vacancy-enhancement factor of 10(3) is needed to achieve magnetism in such systems.     

Large-quantity synthesis of ZnO hollow objects by thermal evaporation: Growth mechanism, structural and optical properties

Synthesis of large-quantity uniformly distributed ZnO hollow objects, i.e. cages and spheres have been performed on Si(1 0 0) and steel alloy substrates by the direct heating of metallic zinc powder in the presence of oxygen. Extensive structural observations revealed that the formed products are crystalline ZnO with the wurtzite hexagonal phases. The Raman-active optical phonon E₂ modes, attributed to wurtzite hexagonal phase of ZnO, were observed at 437 cm⁻¹ for the products grown on both the substrates. The room-temperature photoluminescence spectra showed a broad band in the visible region with a suppressed UV emission, indicating the presence of oxygen vacancies and structural defects in the as-grown structures. Additionally, post growth annealing was also carried out to further investigate the photoluminescence properties of the as-grown products. It was observed that the formation of hollow objects consists of several stages which include the formation of Zn clusters, oxidation on the sheath and sublimation/evaporation of the Zn from the interiors, resulted in the formation of hollow objects.     

Collision-induced vibrational energy transfer: K2[1(1) sigmau+ (nu'=2)]+He, H2-->K2[1(1) sigmau+(nu'=1,3)]+He, H2

Collisional energy transfer processes K2[1(1) sigmau+ (nu'=2)]+He, H2-->K2[1(1) sigmau+(nu'=1,3)]+He, H2 were studied by laser induced fluorescence under gas cell conditions. During the experiments, the cell temperature was kept constant at 420K. The buffer gas pressure was varied over the range from 40 to 250 Pa, Kz molecules were irradiated with pulses of radiation from an OPO laser, populating K2[1(1) sigmau+ (nu'=2)] by photon absorption. The resulting fluorescence included the direct component emitted in the decay of the optically excited state and the sensitized components arising from collisionally populated states. The decay signal of time-resolved fluorescence from 1(1) sigmau+ (nu'=2)]-->1(1) sigmag+(nu"=0) transition was monitored. In the early period after excitation, only very little population in states v'= 1 or 3 had yet accumulated, the rate of collisional activation to the state nu'=2 was negligible. The decay curve of the nu' = 2-->nu" = 0 was treated as a single exponential function. From the measurement of the time-resolved fluorescence, the semilog plot was shown. The slope yielded the effective lifetime of the nu' = 2--> nu' = 0 transition. Based on the Stern-Volmer equation, the radiative lifetime (36 +/- 7) ns was obtained. The total cross sections for deactivation of 1(1) sigmau1 (nu'=2) state by means of collisions with He and H2 are (3.0 +/- 0.5) x 10(-16) cm2 and (6.4 +/- 1.2) x 10(-15) cm2, respectively. The radiative lifetimes of 1(1) sigmau+(nu' = 1,3) states can also be determined through time-resolved fluorescence in pure K vapor. The time-integrated intensities of 1(1)sigmau+(nu' = 1,2,3)-->1(1) sigmag+(nu"=0) transition at different He or Hz pressure were measured. The ratio of fluorescence intensities versus 1/P(He, H2) can be fitted by a straight line. The slopes yield the cross sections sigma(nu'=2-->nu'=1) = (1.4 +/- 0.5) x 10(-16) cm2 and (3.2 +/- 1.0) x 10(-15) cm2; sigma(nu'=2-->nu'=3)= (1.2 +/- 0.4) x 10(-16) cm2 and (2.6 +/- 0.9) x 10(-15) cm2 for He and H2, respectively. Cross sections for the effective quenching of the nu' = 1,2,3 states were also determined. To our knowledge, the cross-sections for these processes are reported for first time.     

ZnO对Eu∶LiNbO3晶体的性能及光谱性质影响

应用坩埚下降法技术,以同成份化学摩尔分数[x(Li2O)=48.6%,x(Nb2O5)=51.4%]为原料,生长出了以不同Zn,Eu双掺杂的LiNbO3晶体。测定了晶体下部与上部的X射线衍射图(XRD)、激发光谱、荧光光谱以及声子边带谱。Zn的掺杂量对Eu3+离子在晶体中的分布产生很大的影响。Zn掺杂摩尔分数为3%时,Eu3+离子在进入晶格时受到有效的压制。随着Zn掺杂摩尔分数提高,达到6%时,压制作用减弱。从Zn2+离子在LiNbO3中随浓度变化的分凝情况以及对Eu3+离子的排斥作用解释了Eu3+离子分布的原因。同时测定了Zn掺杂样品的声子边带谱。     

Zn2+掺杂对GdTaO4:Eu3+荧光粉结构和发光性能的影响

采用高温固相反应法制备了掺杂不同浓度Zn2 的GdTaO4:Eu0.1荧光粉,研究了Zn2 掺杂对GdTaO4:Eu3 的结晶性能,晶粒形貌和光致发光特性的影响.以X射线衍射(XRD)、扫描电子显微镜(SEM)、激发-发射谱、衰减时间谱等方法对其性能进行了表征.结果表明,Zn2 掺杂可显著提高GdTaO4:Eu3 的光致发光强度,当掺杂浓度x=0.01时,光强被提高至2.7倍,可归因于的Zn2 进入了GdTaO4:Eu3 基质晶格,产生了一定浓度的氧空位以达到电荷平衡,并导致发光中心Eu3 的晶格场发生畸变;当x=0.13时,光强提高至3.2倍,且其衰减时间被缩短至40%,可归因于Zn2 的助熔剂效果;但当x＞0.13时,ZnO和GdTa7O19杂相的出现将导致发光强度减弱和衰减时间延长.另外,初步探索表明,Li2CO3和.KCl的共掺杂能进一步提高G.dTaO4:Eu0.1,Zn0.13的发光强度.     

In-plane magnetic field-induced spin polarization and transition to insulating behavior in two-dimensional hole systems

Using a novel technique, we make quantitative measurements of the spin polarization of dilute [ (3.4-6.8)x10(10) cm(-2)] GaAs (311)A two-dimensional holes as a function of an in-plane magnetic field. As the field is increased the system gradually becomes spin polarized, with the degree of spin polarization depending on the orientation of the field relative to the crystal axes. Moreover, the behavior of the system turns from metallic to insulating before it is fully spin polarized. The minority-spin population at the transition is approximately 8x10(9) cm(-2), close to the density below which the system makes a transition to an insulating state in the absence of a magnetic field.     

Rb(5PJ)与He,N2的碰撞精细结构混合和猝灭

在气体样品池条件下,研究了Rb(5PJ) (He,N2)碰撞能量转移过程.用调频半导体激光器激发Rb原子至Rb(5P3/2)态,在不同的He或N2气压下,测量了直接5P3/2→5S1/2荧光和转移5P1/2→5S1/2荧光.对于Rb(5PJ)与He的碰撞,只发生精细结构转移(略去碰撞猝灭效应),电子态能量仅能转移为He原子的平动能.在与N2的碰撞中,向分子振转态的转移是重要的.本实验中,Rb的密度为4.5×1011 cm-3,由辐射陷获理论得到5P1/2→5S1/2的有效辐射率为2.47×107 s-1.利用速率方程分析,可以得到碰撞转移速率系数,对于He,5P3/2→5S1/2转移速率系数kHe21=2.61×10 12 cm3·s.对于N2,测量5PJ He和5PJ N2两种情况下直接荧光与敏化荧光的相对强度比,利用最小二乘法确定5Pa/2→5S1/2转移速率系数kN212=2.36×10-11 cm3·s,5PJ态猝灭速率系数kN2=1.44×10-11 cm3·s-1.由实验结果证实了Cs-N2主要是直线式碰撞传能机制,与其他实验结果进行了比较.     

Cs2分子的光解光谱

利用He-Cd激光器的441.6 nm线光解Cs2分子, 使Cs(n2L)(nL=7P, 6D)态得到布居, 在Cs密度1到9×1015 cm-3范围内测量原子荧光对分子荧光强度比, 得到碰撞转移率系数对解离率之比分别为2.9×10-17和7.4×10-18 cm3. 测定Cs nLJ对nLJ'荧光分支比, 得到72P, 62D态精细结构解离率之比分别为0.53和0.43. 从远翼激发得到的精细结构转移截面与从其他激发过程得到的截面结果相符, 给出了碰撞转移到6D态外(即Cs(6D)+Cs(6S)→Cs(6D)以外的态)的截面为1.9×10-14 cm2.     

Influence of polarity inversion on the electrical properties of Ga‐doped ZnO thin films

This study investigates how polarity inversion influences the relationship between the electrical properties of heavily Ga‐doped ZnO (GZO) films deposited by RF magnetron sputtering and their thickness. The electrical properties observed in very thin films are correlated with a change of polarity from O‐polar to Zn‐polar face upon increasing the film thickness based on results of valence band spectra measured by X‐ray photoelectron spectroscopy. It is found that the electrical properties of very thin GZO films deposited on Zn‐polar ZnO templates are significantly improved compared to those deposited on O‐polar face. A low resistivity of 2.62 × 10^–4 Ω cm, high Hall mobility of 26.9 cm²/V s, and high carrier concentration of 8.87 × 10²⁰ cm^–3 being achieved with 30 nm‐thick GZO films using Zn‐polar ZnO templates on a glass substrate. In contrast, the resistivity of 30 nm‐thick GZO films on bare glass that shows more likely O‐polar is very poor about 1.44 × 10^–3 Ω cm with mobility and carrier concentration are only 11.9 cm²/V s and 3.64 × 10²⁰ cm^–3, respectively. It is therefore proposed that polarity inversion plays an important role in determining the electrical properties of extremely thin GZO films. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Competition between ferromagnetic and anti-ferromagnetic couplings in Co doped ZnO with vacancies and Ga co-dopants

Spin-polarized first-principles electronic structure and total energy calculations have been performed to better understand the magnetic properties of Co doped ZnO (ZnO:Co) with vacancies and Ga co-dopants. The paramagnetic state of ZnO:Co, in which Co ions lose their magnetic moments, has been found to be unstable. The total energy results show that acceptor-like Zn vacancies and donor-like Ga co-dopants render the anti-ferromagnetic (AFM) and ferromagnetic (FM) states to be more favorable, respectively. With O vacancies, ZnO:Co has been found to be in the weak FM state. These magnetic properties can be understood by the calculated O- and Zn-vacancies and Ga co-dopant induced changes of the electronic structure, which suggest that AFM and FM Co-Co couplings are mediated by O 2p-Co majority (↑)-spin 3d hybridized states in the valence band of ZnO and O-vacancy-derived p states or Ga sp states in the ZnO band gap, respectively. For ZnO:Co with Zn vacancies (Ga co-dopants) the AFM (FM) coupling outweighs the FM (AFM) coupling and results in the AFM (FM) state, while for ZnO:Co with O vacancies, both the FM and AFM couplings are enhanced by similar degrees and result in the weak FM state. This study reveals a competition between FM and AFM couplings in ZnO:Co with vacancies and Ga co-dopants, the detailed balancing between which determines the magnetic properties of these materials.     

高压下Li掺杂p型ZnO固溶体的表征

报道了利用ZnO和Li₂O混合物在5GPa, 1200 ℃—1500 ℃条件下, 制备Li掺杂p型ZnO(记作ZnO: Li)固溶体的过程. 研究发现, 高压下温度对于ZnO: Li固溶体的导电类型以及结构具有较大的影响. 其中在1500 ℃条件下烧结的ZnO: Li(Li的掺杂量4.5%)表现出良好的p型电学性能, 其电阻率为3.1× 10^-1Ω·cm, 载流子浓度为3.3× 10¹⁹cm^-3, 迁移率为27.7cm²·V^-1·s^-1. 通过实验及理论计算确定了其受主能级为110meV, 讨论了压力对p型ZnO的形成和电学性能的影响.