Searching for key parameter for determining Tc in Fe-based superconductors: Study of P/As substitution in RFe(P,As)(O,F) [R=La and Nd]

We have investigated the relation between the temperature-dependence of resistivity and superconducting transition temperature T_c in RFeP_1−xAs_xO_0.90F_0.10 (x=0-1.0) (R=La and Nd). In contrast to the linear change of the crystal structure with increasing x, the temperature dependence of resistivity and T_c show non-monotonous x-dependence. When the As concentration x is increased, the temperature-dependence of resistivity changes from T² to T-linear, and T_c distinctly increases in all the La compounds and the Nd ones with x<0.60. The results indicate that the substitution of As for P induces the spin fluctuation and resultantly enhances T_c. On the other hand, we could not find any relation between the temperature-dependence of resistivity and T_c in the Nd samples with x>0.60. This may suggest the existence of other parameters for determining T_c besides the antiferromagnetic correlation in this system.     

B and Pt NMR study of the superconductors Li2(Pd1−xPtx)3B without inversion symmetry

We report the ¹¹B and ¹⁹⁵Pt NMR measurements in non-centrosymmetric superconductors Li₂(Pd_1−xPt_x)₃B (x = 0.0, 0.2, 0.5, 1.0). From the measurements of spin–lattice relaxation time (T₁), we found that there was a coherence peak (CP) just below superconducting transition temperature (T_c) for x = 0–0.5 but no CP in x = 1. We demonstrated that the system for x = 0–0.5 were BCS superconductors but there existed line node in the superconducting gap for x = 1.0. The ¹⁹⁵Pt Knight Shift in x = 0.2 decreased below T_c, indicating spin-singlet state. The results showed that BCS superconducting state evolves into an exotic state with line-nodes in the gap function when x is increased, as the spin–orbit coupling is enhanced.     

Effect of pressure and magnetic field on bilayer La1.25Sr1.75Mn2O7 single crystal

We report the temperature dependence of susceptibility for various pressures, magnetic fields and constant magnetic field of 5 T with various pressures on La_2−2xSr_1+2xMn₂O₇ single crystal to understand the effectiveness of pressure and magnetic field in altering the magnetic properties. We find that the Curie temperature, T_c, increases under pressure (dT_c/dP=10.9 K/GPa) and it indicates the enhancement of ferromagnetic phase under pressure up to 2 GPa. The magnetic field dependence of T_c is about 26 K for 3 T. The combined effect of pressure and constant magnetic field (5 T) shows dT_c/dP=11.3 K/GPa and the peak structure is suppressed and broadened. The application of magnetic field of 5 T realizes 3D spin ordered state below T_c at atmospheric pressure. Both peak structure in χ_c and 3D spin ordered state are suppressed, and changes to 2D-like spin ordered state by increase of pressure. These results reveal that the pressure and the magnetic field are more competitive in altering the magnetic properties of bilayer manganite La_1.25Sr_1.75Mn₂O₇ single crystal.     

Superconductivity in Sr and Co co-doped PrFeAsO

Polycrystalline Sr and Co co-doped superconducting oxypnictides Pr_1−ySr_yFe_1−xCo_xAsO were synthesized by solid state reaction method, and superconductivity was investigated by measuring resistivity, magnetic susceptibility and thermopower. In the PrFe_1−xCo_xAsO samples with only Co doping, T_c reaches a maximum of 16 K at x=0.075-0.1, and the variation of T_c with Co content (x) is dome-shaped, consistent with the other Co-doped 1 1 1 1 phase systems such as LaFe_1−xCo_xAsO and SmFe_1−xCo_xAsO. In the Co and Sr co-doped Pr_0.8Sr_0.2Fe_1−xCo_xAsO system, T_c reaches a maximum of about 16 K at x=0.15, and the T_c‐x dome shifts to higher Co content in the phase diagram of T_c versus Co content (x). Our result indicates that Sr doping effectively induces hole-type charge carriers in the PrFeAsO system and the disorder caused by Sr and Co dopants has little effect on T_c. The thermopower data confirms that Sr dopant is hole-type and Co dopant is electron-type. The shift of T_c‐x dome to higher Co content caused by Sr doping implies that the Sr dopant can compensate for the Co doping effect. The results suggest that there could be a universal dependence of T_c on charge carrier density in both hole-type and electron-type oxypnictide superconductors.     

Dielectric properties of SrBi2−xPrxNb2O9 ceramics (x=0, 0.04 and 0.2)

SrBi_2−xPr_xNb₂O₉ (x=0, 0.04 and 0.2) ceramics were prepared by a solid state reaction method. X-ray diffraction analysis indicated that single-phase layered perovskite structure ferroelectrics were obtained. A relaxor behavior of frequency dispersion was observed among Pr-doped SrBi₂Nb₂O₉. The degree of frequency dispersion ΔT increased from 0 for x=0-7 °C for x=0.2, and the extent of relaxor behavior γ increased from 0.94 for x=0-1.45 for x=0.2. The substitution of Pr ions for Bi³⁺ ions in the Bi₂O₂ layers resulted in a shift of the Curie point to lower temperatures and a decrease in remanent polarization. In addition, the coercive field 2E_c reduced from 110 kV/cm for an undoped specimen to 90 kV/cm for x=0.2.     

Effect of 3d metal ion doping on the structure and superconductivity of (Tl0.5Pb0.5)Sr2CaCu2O7

(Tl_0.5Pb_0.5)Sr₂Ca(Cu_2−xM_x)O₇ (M=Co, Ni and Zn) have been synthesized and investigated by means of X-ray diffraction, scanning electron microscope, electrical resistivity and magnetic susceptibility measurements. X-ray diffraction patterns show that all studied samples contain the nearly single ‘1212’ phase. They crystallize in a tetragonal unit cell with a=3.8028-3.8040 Å and c=12.0748-12.1558 Å. In (Tl_0.5Pb_0.5)Sr₂Ca(Cu_2−xM_x)O₇ system (M=Co or Ni), the superconducting critical temperature T_c decreases linearly with both Co and Ni concentrations and the rate of T_c decrease is around −6.5 and −7.0 K/at%, respectively. For (Tl_0.5Pb_0.5)Sr₂Ca (Cu_2−xZn_x)O₇ system, the dependence of T_c on the Zn dopant concentration deviates from a linear behavior and the Zn substitution suppresses T_c much less (−2.5 K/at%) than the Co and Ni substitutions. The suppression in T_c in Co and Ni doped samples are attributed to the magnetic pair-breaking mechanism and the reduction in the carrier concentration. The suppression of T_c in Zn doped samples is not caused by the reduction in carrier concentration which should remain constant, but rather due to nonmagnetic pair-breaking mechanism induced by disorder as well as the filling of the local Cu d_x²−y² state due to the full d band of Zn ions.     

Superconductivity in the intermetallic compound YRhAl

The intermetallic compound, YRhAl, has been prepared and is found to be isomorphic with RRhAl (R=Pr, Nd, Gd, Ho and Tm) compounds crystallizing in the orthorhombic TiNiSi-type structure (space group Pnma). Heat capacity and electrical resistivity measurements in the He-3 temperature range reveal that this compound is superconducting with a transition temperature, T_c, of 0.9 K. The electronic specific heat coefficient, γ, and the Debye temperature are found to be 6.1 mJ/mol K and 197 K, respectively. The specific heat jump at the superconducting transition is found to be consistent with the BCS weak-coupling limit. This combined with the earlier observation of superconductivity in LaRhAl (T_c=2.4 K) having a different structure than that of YRhAl, suggests that the underlying structure is not very crucial for the occurrence of superconductivity in RRhAl series of compounds.     

Double metal-insulator peaks and effect of Sm substitution on magnetic and transport properties of hole-doped La0.85Ag0.15MnO3

La_0.85−xSm_xAg_0.15MnO₃ (x=0−0.2) ceramics were prepared using the conventional solid-state synthesis method to investigate the effect of Sm³⁺ substitution on magnetic and electrical transport properties. Magnetic susceptibility versus temperature measurements showed all samples exhibit ferromagnetic to paramagnetic transition with Curie temperature, T_c decreasing from 283 K (x=0) to 164 K (x=0.2) with increasing Sm³⁺. The observed slope in susceptibility, χ′ versus temperature curves below T_c indicates the possible presence of FM and AFM phases in the metallic region. In addition, a deviation from the Curie-Weiss law above T_c in 1/χ′ versus T curves indicates the existence of a Griffith's phase in the x=0.05−0.2 samples due to the Sm³⁺ ion substitution. The Griffith temperature, T_G was found to decrease from 295 K (x=0.05) to 229 K (x=0.2). Electrical resistivity measurements of the samples in zero field showed transition from metallic behavior to insulating behavior as the temperature was increased. For x=0, two metal-insulator, MI transition peaks were observed at T_p1=282 K and at T_p2=250 K. Both peaks shifted to lower temperatures with the increase in Sm³⁺. The relative resistivity of the first peak to the second peak decreases with increasing Sm³⁺ for x>0.05 while at x=0.2 the T_p1 peak was strongly suppressed. Magnetoresistance, MR was observed to weaken with Sm³⁺ substitution. The metallic region of the ρ(T) curve of the x=0−0.15 samples was fitted to the model of electron-electron and electron-magnon scattering while the insulating region was fitted to the variable range hopping, VRH model. The resistivity behavior indicated that the substitution of Sm³⁺ weakened the double exchange process and enhanced the Jahn-Teller effect. Our results indicated that the T_p1 peak is strongly related to the double-exchange mechanism while the T_p2 peak is suggested to originate from magnetic inhomogeneity.     

Effect of substrate temperature on structure and electrical resistivity of laser-ablated IrO2 thin films

IrO₂ thin films were prepared on Si(1 0 0) substrates by laser ablation. The effect of substrate temperature (T_sub) on the structure (crystal orientation and surface morphology) and property (electrical resistivity) of the laser-ablated IrO₂ thin films was investigated. Well crystallized and single-phase IrO₂ thin films were obtained at T_sub = 573-773 K in an oxygen partial pressure of 20 Pa. The preferred orientation of the laser-ablated IrO₂ thin films changed from (2 0 0) to (1 1 0) and (1 0 1) depending on T_sub. With the increasing of T_sub, both the surface roughness and crystallite size increased. The room-temperature electrical resistivity of IrO₂ thin films decreased with increasing T_sub, showing a low value of (42 ± 6) × 10⁻⁸ Ω m at T_sub = 773 K.     

Electrical behavior of some silver-doped lanthanum-based CMR materials

With a view to understand the structural, magnetic and electrical properties of La_1−xAg_xMnO₃ (x=0.05-0.3), a series of samples were prepared by polyvinyl alcohol (PVA) gel route. It has been found that both the metal-insulator and ferro- to paramagnetic transition temperatures after increasing up to the composition x=0.20, are found to remain constant thereafter. The electrical resistivity vs. temperature plot of the sample x=0.10 is found to exhibit an insulating behavior below 36 K, while the sample, x=0.20 exhibits two peaks, and the observed behavior is explained on the basis of the phase separation model. The low-temperature (T<T_P), electrical resistivity data were analyzed by a theoretical model, ρ=ρ₀+ρ₂T²+ρ_4.5T^4.5, indicating the importance of grain/domain boundary effects, electron-electron and two-magnon scattering processes. The low-temperature resistivity data (T<50 K) were fitted to an equation, which is based on the combined effect of weak localization, electron-electron and electron-phonon scattering.     

Temperature dependence of electrical resistivity for Ca-doped perovskite-type Y1−xCaxCoO3 prepared by sol-gel process

The temperature dependences of DC electrical resistivity for perovskite-type oxides Y_1−xCa_xCoO₃ (0?x?0.1), prepared by sol-gel process, were investigated in the temperature range from 20 K up to 305 K. The results indicated that with increase of doping content of Ca the resistivity of Y_1−xCa_xCoO₃ decreased remarkably, which was found to be caused mainly by increase of carrier (hole) concentration. In the whole temperature range investigated the temperature dependence of resistivity ρ(T) for the un-doped (x=0) sample decreased exponentially with decreasing temperature (i.e. ln ρ∝1/T), with a conduction activation energy ; the resisitivity of lightly doped oxide (x=0.01) possessed a similar temperature behavior but has a reduced E_a (0.155 eV). Moreover, experiments showed that the relationship ln ρ∝1/T existed only in high-temperature regime for the heavily doped samples (T?82 and ∼89 K for x=0.05 and 0.1, respectively); at low temperatures Mott's ln ρ∝T^−1/4 law was observed, indicating that heavy doping produced strong random potential, which led to formation of considerable localized states. By fitting of the experimental data to Mott's T^−1/4 law, we estimated the density of localized states N(E_F) at the Fermi level, which was found to increase with increasing doping content.     

Magnetocaloric effects in (Gd1−xTbx)Co2

The structures and magnetocaloric effects of (Gd_1−xTb_x)Co₂ (x=0, 0.25, 0.4, 0.5, 0.6, 0.7, 0.8, and 1) pseudobinary compounds were investigated by X-ray powder diffraction and magnetic properties measurement. The results show that the T_c of the alloy is near room temperature when X=0.6. The magnetic entropy changes of the compounds increase from 1.7 to 3.6 J/kg K with increasing the content of Tb under an applied field up to 2 T. All the compounds exhibit second order magnetic change. As a result, the values of their ΔS_M are lower than that of some large magnetocaloric effect materials.     

Structural, electrical and magnetic characterizations of Ni-Cu-Zn ferrite synthesized by citrate precursor method

Fine powders of NiCuZn ferrite with composition Ni_(0.7−x)Cu_xZn_0.3Fe₂O₄ (where x=0, 0.2, 0.4 and 0.6) were prepared by the citrate precursor method. X-ray diffraction measurements confirm the formation of single-phase cubic spinel structure. The grain size was estimated by SEM micrograph which increases with Cu content. Dielectric constant (?) and loss tangent (tan δ) were measured as a function of frequency. The ? and tan δ show a decreasing trend with increase of frequency for all the samples. The DC resistivity was measured as a function of temperature. The temperature-dependent DC resistivity measurements show that the room-temperature DC resistivity of NiCuZn ferrite with x=0.2 is of the order of 10⁹ Ω cm. The AC conductivity (σ_AC) was studied as a function of frequency. The hysteresis data indicate that the maximum saturation magnetization of 38.66 emu/g is obtained for the composition with x=0.2.     

Non-Fermi-liquid behavior in UCu4+xAl8−x compounds

We report on experimental studies of the Kondo physics and the development of non-Fermi-liquid scaling in UCu_4+xAl_8−x family. We studied 7 different compounds with compositions between x=0 and 2. We measured electrical transport (down to 65 mK) and thermoelectric power (down to 1.8 K) as a function of temperature, hydrostatic pressure, and/or magnetic field.Compounds with Cu content below x=1.25 exhibit long-range antiferromagnetic order at low temperatures. Magnetic order is suppressed with increasing Cu content and our data indicate a possible quantum critical point at x_cr≈1.15. For compounds with higher Cu content, non-Fermi-liquid behavior is observed. Non-Fermi-liquid scaling is inferred from electrical resistivity results for the x=1.25 and 1.5 compounds. For compounds with even higher Cu content, a sharp kink occurs in the resistivity data at low temperatures, and this may be indicative of another quantum critical point that occurs at higher Cu compositions.For the magnetically ordered compounds, hydrostatic pressure is found to increase the Néel temperature, which can be understood in terms of the Kondo physics. For the non-magnetic compounds, application of a magnetic field promotes a tendency toward Fermi-liquid behavior. Thermoelectric power was analyzed using a two-band Lorentzian model, and the results indicate one fairly narrow band (10 meV and below) and a second broad band (around hundred meV). The results imply that there are two relevant energy scales that need to be considered for the physics in this family of compounds.     

Preparation of REFeAsO1−xFx (RE=Sm and Gd) superconductors at a relatively low temperature

A series of the SmFeAsO_1−xF_x and GdFeAsO_1−xF_x (x=0.05, 0.1, 0.15, 0.2, 0.25) samples have been prepared using nano-scaled ReF₃ as the fluorine resource at a relatively low temperature. The samples have been sintered at 1100 and 1120 °C for SmFeAsO_1−xF_x and GdFeAsO_1−xF_x, respectively. These temperatures are at least 50-60° lower than other previous reports. All of the so-prepared samples possess a tetragonal ZrCuSiAs-type structure. Dramatically supression of the lattice parameters and increase in T_c proved that this low temperature process was more effective to introduce fluorine into R_EFeAsO. Superconducting transition appeared at 39.5 K for SmFeAsO_1−xF_x with x=0.05 and at 22 K for GdFeAsO_1−xF_x with x=0.1. The highest T_c was detected to be 54 K in SmFeAsO_0.8F_0.2 and 40.2 K in GdFeAsO_0.75F_0.25. The use of the nano-scaled ReF₃ compounds has improved the efficiency of the present low temperature method in synthesizing the fluorine-doped iron-based superconductors.     

Metal-insulator transition in electron-doped Ba1−x La x MnO3 compounds

Electron-doped (Ba_1−x La _x )MnO₃ compounds were prepared for x=0−0.5. Measurements of X-ray diffraction (XRD) at room temperature and temperature variation of dc electrical resistivity down to 20 K were carried out. Samples with x=0.2–0.5 exhibit metal-insulator (M-I) transition. The maximum M-I transition temperature (T _c) of 289 K was observed for 30% of La doping (x=0.3). XRD patterns of these samples (x=0.2−0.5) were analyzed using Rietveld refinement. These samples are found to be mostly in single-phase form with orthorhombic symmetry (space group Pbnm). We have found strong correlation between Mn-O-Mn bond angles and T _c of M-I transition. The resistivity data below T _c could be fitted to the expression ρ=ρ ₁+ρ ₂ T ² and this shows that double exchange interaction plays a major role even in Mn⁴⁺-rich compound. Above T _c the resistivity data were fitted to variable range hopping and small polaron models.     

Superconductivity and critical fields in undoped and Sn-doped MoSr2YCu2O8−δ

Samples with nominal compositions MoSn_xSr₂YCu₂O_8−δ (0 ? x ? 0.075) were synthesized and their superconducting and magnetotransport properties were investigated. It was established that the optimum Sn-doping (x = 0.02 and 0.03) increases the T_c of the undoped MoSr₂YCu₂O_8−δ. The upper critical fields of the samples were determined using magnetization, susceptibility and resistivity measurements. It was established that the Sn-doping weakly affects the first and the intragrain second critical field of Mo-1212 but enhances the extrapolated to T = 0 (i.e. the intergrain) upper critical field. The observed phenomena were discussed on the basis of the Josephson-junction-arrays model. A phenomenological expression describing the temperature dependency of the susceptibility of Mo-1212 was found.     

Structural and superconductivity study on α-FeSex

We have successfully synthesized the α-FeSe_x binary tetragonal superconductors with nominal composition of FeSe_x (x=0.6-1.0) via conventional solid state reactions between Fe and Se sealed in quartz tubes. Fe and β-FeSe are the most commonly seen impurities in this binary system. A low-temperature annealing at 400 °C is found to be crucial to remove β-FeSe, which is the thermodynamic stable phase with hexagonal symmetry. For all the samples of FeSe_x, superconductivity is confirmed by magnetic measurements as well as resistivity measurements with their T_c at around 8 K. We noticed that their T_c does not vary with the different nominal Se amount. High-resolution synchrotron X-ray diffraction analysis revealed that the unit cell parameters of all these samples do not change within the error range, and their structure only tolerate the same very small amount of Se deficiency. Based on this study, we concluded that the α-FeSe_x superconductor only exist in a very narrow deficiency range.     

Thermoelectric power of potassium doped lanthanum manganites at low temperatures

The temperature-dependent resistivity and thermoelectric power of monovalent (K) doped La_1−xK_xMnO₃ polycrystalline pellets (x=0.05, 0.10 and 0.15) between 50 and 300 K are reported. K substitution enhances the conductivity of this system. Curie temperature (T_C) also increases from 260 to 309 K with increasing K content. In the paramagnetic region (T>T_C), the electrical resistivity is well represented by adiabatic polaron hopping, while in the ferromagnetic region (T<T_C), the resistivity data show a nearly perfect fit for all the samples to an expression containing, the residual resistivity, spin-wave and two-magnon scattering and the term associated with small-polaron metallic conduction, which involves a relaxation time due to a soft optical phonon mode. Small polaron hopping mechanism is found to fit well to the thermoelectric power (S) data for T>T_C whereas at low temperatures (T<T_C) in ferromagnetic region (S_FM), S_FM is well explained with the spin-wave fluctuation and electron–magnon scattering. Both, resistivity and thermopower data over the entire temperature range (50–300 K) are also examined in light of a two-phase model based on an effective medium approximation.     

Effect of annealing on the magnetic and superconducting properties of single-crystalline UCoGe

Single-crystals of the new ferromagnetic superconductor UCoGe have been grown. The quality of as-grown samples can be significantly improved by a heat-treatment procedure, which increases the residual resistance ratio (RRR) from ∼5 to ∼30. Magnetization M(T) and resistivity ρ(T) measurements show the annealed samples have a sharp ferromagnetic transition with a Curie temperature T_C is 2.8 K. The ordered moment of 0.06 μ_B is directed along the orthorhombic c-axis. Superconductivity is found below a resistive transition temperature T_s=0.65 K.