Photo-excited zero-resistance states in quasi-two-dimensional GaAs / AlxGa1−xAs devices

We illustrate some experimental features of the recently discovered radiation-induced zero-resistance states in the high-mobility GaAs/AlGaAs system, with a special emphasis on the interplay between the radiation-induced changes in the diagonal resistance and the Hall effect. We show that, quantum Hall effects, i.e., quantum Hall plateaus, disappear under photoexcitation, at the minima of the radiation-induced magnetoresistance oscillations.     

From semiclassical transport to quantum Hall effect under low-field Landau quantization

The crossover from the semiclassical transport to the quantum Hall effect is studied by examining a two-dimensional electron system in an AlGaAs/GaAs heterostructure. By probing the magneto-oscillations, it is shown that the semiclassical Shubnikov-de Haas (SdH) formulation can be valid even when the minima of the longitudinal resistivity approach zero. The extension of the applicable range of the SdH theory could be due to the damping effects resulting from disorder and temperature. Moreover, we observed plateau-plateau transition-like behavior with such an extension. From our study, it is important to include positive magnetoresistance to refine the SdH theory.     

Phonon-assisted tunneling and shot noise in double barrier structures in a longitudinal magnetic field

The phonon-assisted resonant tunneling is studied for the double barrier structures in a longitudinal magnetic field. Using the scattering matrix approach with an appropriate one-particle Green's function we are able to calculate the current and the zero frequency shot noise power spectrum in a large range of the magnetic field and to any order of the electron-phonon interaction. Obtained results describe well the relevant experimental data and provide new suggestions for further examinations.     

Electrical Characteristics of Co/n-Si Schottky Barrier Diodes Using I-V and C-V Measurements

Electrical characteristics of Co/n-Si Schottky barrier diodes are analysed by current- voltage （I- V） and capacitancevoltage （C- V） techniques at room temperature. The electronic parameters such as ideality factor, barrier height and average series resistance are determined. The barrier height 0. 76 eV obtained from the C - V measurements is higher than that of the value 0. 70 eV obtained from the I - V measurements. The series resistance Rs and the ideality factor n are determined from the d ln（ I） /dV plot and are found to be 193.62 Ω and 1.34, respectively. The barrier height and the Rs value are calculated from the H（I） - I plot and are found to be 0.71 eV and 205.95Ω. Furthermore, the energy distribution of the interface state density is determined from the forward bias I - V characteristics by taking into account the bias dependence of the effective barrier height. The interface state density Nss ranges from 6.484×10^11 cm^-2eV^-1 in （Ec - 0.446） eV to 2.801×10^10 cm^-2eV^-1 in （Ec - 0.631） eV, of the Co/n-Si Schottky barrier diode. The results show the presence of a thin interracial layer between the metal and the semiconductor.     

Quantum self-consistent approach to the charge gap of the quasi-one-dimensional organic conductors

We apply an extended quantum self-consistent method, in which quantum fluctuations are taken into account, to the bosonization Hamiltonian to investigate analytically the charge gap in the quasi-one-dimensional (1D) organic conductors at quarter-filling described by the 1D Hubbard model with dimerization and alternate potential on site. It is shown that either dimerization or alternate potential gives rise to the enhancement of the charge gap. Our results are compared with those of the numerical and the other analytical theories. Our results are also consistent with the experimental data of the actual organic materials when the effect of nearest-neighbor Coulomb interaction is taken into account.     

EPR study of the low temperature charge density wave state of o-TaS3

We report an EPR study of the chain conductor o-TaS₃ in the low temperature charge density wave (CDW) state. The EPR spectrum is attributed to Fe³⁺ (S=5/2) impurities. A power law for the temperature dependence of the EPR intensity, (T^−α with an exponent α∼0.8) found below ∼30 K is very close to that previously found in magnetic susceptibility measurements. The possible role of these impurities in the susceptibility data are discussed.     

Numerical analysis of gate leakage current in AlGaN Schottky diodes

We studied theoretically the influence of the tunneling current on the leakage current in AlGaN Schottky diodes. It is shown that the most important conductance mechanism in these structures is the tunneling. The thermionic emission has lower influence on the total current practically throughout the whole reverse bias range and doping concentrations studied. For high doping concentrations we found very slow temperature dependence of the diode current.     

The effect of interface states, excess capacitance and series resistance in the Al/SiO2/p-Si Schottky diodes

The current-voltage (I-V) characteristics of Al/SiO₂/p-Si metal-insulator-semiconductor (MIS) Schottky diodes were measured at room temperature. In addition the capacitance-voltage (C-V) and conductance-voltage (G-V) measurements are studied at frequency range of 10 kHz-1 MHz. The higher value of ideality factor of 3.25 was attributed to the presence of an interfacial insulator layer between metal and semiconductor and the high density of interface states localized at Si/SiO₂ interface. The density of interface states (N_ss) distribution profile as a function of (E_ss − E_v) was extracted from the forward bias I-V measurements by taking into account the bias dependence of the effective barrier height (Φ_e) at room temperature for the Schottky diode on the order of ≅4 × 10¹³ eV⁻¹ cm⁻²_. These high values of N_ss were responsible for the non-ideal behaviour of I-V and C-V characteristics. Frequency dispersion in C-V and G-V can be interpreted only in terms of interface states. The N_ss can follow the ac signal especially at low frequencies and yield an excess capacitance. Experimental results show that the I-V, C-V and G-V characteristics of SD are affected not only in N_ss but also in series resistance (R_s), and the location of N_ss and R_s has a significant on electrical characteristics of Schottky diodes.     

Energy scales and magnetoresistance at a quantum critical point

The magnetoresistance (MR) of CeCoIn₅ is notably different from that in many conventional metals. We show that a pronounced crossover from negative to positive MR at elevated temperatures and fixed magnetic fields is determined by the scaling behavior of quasiparticle effective mass. At a quantum critical point (QCP) this dependence generates kinks (crossover points from fast to slow growth) in thermodynamic characteristics (like specific heat, magnetization, etc.) at some temperatures when a strongly correlated electron system transits from the magnetic field induced Landau-Fermi liquid (LFL) regime to the non-Fermi liquid (NFL) one taking place at rising temperatures. We show that the above kink-like peculiarity separates two distinct energy scales in QCP vicinity - low temperature LFL scale and high temperature one related to NFL regime. Our comprehensive theoretical analysis of experimental data permits to reveal for the first time new MR and kinks scaling behavior as well as to identify the physical reasons for above energy scales.     

Modification of the charge ordering transition in the quasi-one-dimensional conductor (TMTTF)2SbF6 under pressure

We have measured the temperature dependences of the conductance G and the dielectric permittivity ε′ of the (TMTTF)₂SbF₆ compound under a moderate pressure. The maximum of G(T) associated with the Mott-Hubbard localization disappears under pressure. With increasing pressure the peak in ε′(T), corresponding to the charge ordering (CO) phase transition, shifts to lower temperatures and broadens. At pressures above 0.24 GPa, ε′(T) becomes strongly frequency dependent. These modifications are explained in the frame of the extended Hubbard model and a slowing down behavior.     

Strongly correlated Fermi-systems: Non-Fermi liquid behavior, quasiparticle effective mass and their interplay

Basing on the density functional theory of fermion condensation, we analyze the non-Fermi liquid behavior of strongly correlated Fermi-systems such as heavy-fermion metals. When deriving equations for the effective mass of quasiparticles, we consider solids with a lattice and homogeneous systems. We show that the low-temperature thermodynamic and transport properties are formed by quasiparticles, while the dependence of the effective mass on temperature, number density, magnetic fields, etc., gives rise to the non-Fermi liquid behavior. Our theoretical study of the heat capacity, magnetization, energy scales, the longitudinal magnetoresistance and magnetic entropy are in good agreement with the remarkable recent facts collected on the heavy-fermion metal YbRh₂Si₂.     

1/d corrections for interacting spinless fermions: One-particle properties

One-particle properties of the spinless fermion model with repulsion at half filling are calculated within an approach correct to first order in the inverse of the lattice dimensiond. Continuity of the limitd requires a scaling of the nearest-neighbour hopping proportional to and of the nearest-neighbour interaction proportional to 1/d. Due to this scaling the Hartree approximation becomes exact in infinite dimensions. We show that 1/d corrections comprise the Fock diagram and the local correlation diagram in the self-consistent Dyson equation. This approach is applied to simple-cubic systems in dimensiond=1, 2 and 3. Ground state properties and the charge-density wave phase diagram are calculated. AtT=0 the inclusion of 1/d terms gives only small corrections to the leading Hartree contribution ind=2, 3. ForT>0, however, the 1/d corrections are important. They lead to a non-negligible reduction of the critical temperature. Ind=1 the 1/d corrections are very large, but they do not succeed in removing the spurious phase transition atT>0. The 1/d approach provides a good and tractable approximation ind=3 and probably ind=2, which allows also further systematic improvement.     

Analysis of self-organized criticality in weighted coupled systems

A weighted Olami, Feder, and Christensen (OFC) model, improving the redistribution rule of the original model, has been introduced. It can be seen as a generalization of the OFC model and exhibits Self-organized criticality (SOC) behavior, too. The stress evolution process has been accelerated and the nontrivial relationship between the exponent of 1/f and the control parameter has been reported. Although our model is simple, we obtained more reasonable avalanche dimensions than with the previous model.     

Flocking of Multi-agent Systems Following Virtual Leader with Time-Varying Velocity

We consider the collective dynamics for a multi-agent system with a virtual leader. The velocity of the leader is time-varying and the interconnection topology of position network is switching based on the distances between agents. To track the leader in flocking, a neighbour-based local piecewise smooth controller is proposed for each agent. Using the control method, all agent velocities asymptotically approach the desired velocity while collisions can be avoided between agents. Some simulation results are provided to demonstrate the theoretical results.     

Magnetic and transport properties in double-doping La(2+4x)/3Sr(1−4x)/3Mn1–xCuxO3 (0⩽x⩽0.20) systems

A series of the double-doping samples La_(2+4x)/3Sr_(1−4x)/3Mn_1–xCu_xO₃(0?x?0.2)$(0?x?0.2)$with the Mn³⁺/Mn⁴⁺ ratio fixed at 2:1 and the single-doping samples La_2/3Sr_1/3Mn_1–xCu_xO₃(0?x?0.2)$(0?x?0.2)$ have been investigated. For the double-doping samples, though the ratio Mn³⁺/Mn⁴⁺=2:1 has been generally recognized the optimum ratio, the Curie temperature _TC$T_{\mathrm{C}}$ and metallic–insulator transition temperature _Tp1$T_{\mathrm{p}1}$ are more rapidly decreased by Cu substitution than that corresponding to single-doping samples. And the resistivity ρ$\rho$ value for the double doping is larger about two or three orders of magnitude than that corresponding to single doping. At the same time, two resistivity peaks and two magnetoresistance (MR) peaks appear. We suggest that for the double-doping samples the A-site cation size 〈r_A〉 and the A-site mismatch factor σ²${\sigma }^2$ decreases with increasing doping level, which leads to the system microstructural distortion. This microstructural distortion makes the Mn³⁺–O–Mn⁴⁺ cut off more cluster-spin except for the clusters induced by Cu. These cluster interfaces contribute to ρ$\rho$, which exceeds far the contribution of e_g electron decreasing with doping increasing in the single doping. At the same time, such interface scattering also gives rise to the appearance of second peak for the double-doping samples. The experimental results shows that double doping could be also a potential way in tuning colossal MR (CMR), which can give a guide for the adequate selection of CMR materials.     

Self-organized partially synchronous dynamics in populations of nonlinearly coupled oscillators

We analyze a minimal model of a population of identical oscillators with a nonlinear coupling—a generalization of the popular Kuramoto model. In addition to well-known for the Kuramoto model regimes of full synchrony, full asynchrony, and integrable neutral quasiperiodic states, ensembles of nonlinearly coupled oscillators demonstrate two novel nontrivial types of partially synchronized dynamics: self-organized bunch states and self-organized quasiperiodic dynamics. The analysis based on the Watanabe-Strogatz ansatz allows us to describe the self-organized bunch states in any finite ensemble as a set of equilibria, and the self-organized quasiperiodicity as a two-frequency quasiperiodic regime. An analytic solution in the thermodynamic limit of infinitely many oscillators is also discussed.     

Self-organization of quasi-equilibrium steady-state condensation in accumulative ion-plasma devices

We consider both theoretically and experimentally self-organization process of quasi-equilibrium steady-state condensation of sputtered substance in accumulative ion-plasma devices. It has been shown that the self-organization effect is caused by self-consistent variations of the condensate temperature and the supersaturation of depositing atoms. Two possible types of self-organization process have been found out on the basis of the phase-plane method. The aluminium condensation experimental data confirming the self-organization nature of quasi-equilibrium steady-state condensation are discussed.     

Enhanced magnetoresistance and surface state of CrO2 particles improved by chemical process

The paper presents an approach to enhance a magnetoresistance (MR) effect in CrO₂ powder compact by an oxidization reaction process. An aqueous potassium permanganate (KMnO₄) was used to react with the CrO₂ particles coated naturally with Cr₂O₃ layer. The experiment indicates that the strong oxidant can effectively adjust thickness of the natural Cr₂O₃ layer, and thereby change the surface state of the CrO₂ particles. Structural and magnetic properties for the improved CrO₂ particles have been characterized by X-ray diffractometer (XRD), X-ray photoelectron spectroscopy (XPS) and SQUID magnetometer. The results exhibit that the magnetotransport behavior of CrO₂ particles depends sensitively on the chemical reaction time. An optimal reaction process yields an obvious increase up to −33% in magnetoresistance at a temperature of 5 K for the chemical treated CrO₂ powder, compared to MR=-27% for the original CrO₂ powder. The mechanism of magnetotransport is assumed to originate from the spin-dependent tunneling in the granular system, which is consistent with our experimental results. The simple chemical approach has a potential to achieve an enhanced magnetoresistance in a metallic particle system by adjusting the surface state of the magnetic nanoparticle.     

The effect of carrier density gradients on magnetotransport data measured in Hall bar geometry

We have measured magnetotransport of the two-dimensional electron gas in a Hall bar geometry in the presence of small carrier density gradients. We find that the longitudinal resistances measured at both sides of the Hall bar interchange by reversing the polarity of the magnetic field. We offer a simple explanation for this effect and discuss implications for extracting conductivity flow diagrams of the integer quantum Hall effect.     

Improvement of interface properties of AlGaN/GaN heterostructures under gamma-radiation

The cathodoluminescence (CL) spectra of AlGaN/GaN heterostructures grown on sapphire substrate were studied before and after gamma irradiation treatment. The CL spectroscopy results reveal strong yellow and blue luminescence transformation under gamma radiation treatment. The changes in CL spectra are compared with changes in the electrical characteristics of two-dimensional gas in AlGaN/GaN heterostructures. The origins of the observed improvement in properties of AlGaN/GaN heterostructures after gamma radiation treatment with 1 × 10⁶ rad are discussed on the basis of compensation and structural ordering of native defects.