Photo-excited zero-resistance states in quasi-two-dimensional GaAs / AlxGa1−xAs devices

We illustrate some experimental features of the recently discovered radiation-induced zero-resistance states in the high-mobility GaAs/AlGaAs system, with a special emphasis on the interplay between the radiation-induced changes in the diagonal resistance and the Hall effect. We show that, quantum Hall effects, i.e., quantum Hall plateaus, disappear under photoexcitation, at the minima of the radiation-induced magnetoresistance oscillations.     

From semiclassical transport to quantum Hall effect under low-field Landau quantization

The crossover from the semiclassical transport to the quantum Hall effect is studied by examining a two-dimensional electron system in an AlGaAs/GaAs heterostructure. By probing the magneto-oscillations, it is shown that the semiclassical Shubnikov-de Haas (SdH) formulation can be valid even when the minima of the longitudinal resistivity approach zero. The extension of the applicable range of the SdH theory could be due to the damping effects resulting from disorder and temperature. Moreover, we observed plateau-plateau transition-like behavior with such an extension. From our study, it is important to include positive magnetoresistance to refine the SdH theory.     

Phonon-assisted tunneling and shot noise in double barrier structures in a longitudinal magnetic field

The phonon-assisted resonant tunneling is studied for the double barrier structures in a longitudinal magnetic field. Using the scattering matrix approach with an appropriate one-particle Green's function we are able to calculate the current and the zero frequency shot noise power spectrum in a large range of the magnetic field and to any order of the electron-phonon interaction. Obtained results describe well the relevant experimental data and provide new suggestions for further examinations.     

Electrical Characteristics of Co/n-Si Schottky Barrier Diodes Using I-V and C-V Measurements

Electrical characteristics of Co/n-Si Schottky barrier diodes are analysed by current- voltage （I- V） and capacitancevoltage （C- V） techniques at room temperature. The electronic parameters such as ideality factor, barrier height and average series resistance are determined. The barrier height 0. 76 eV obtained from the C - V measurements is higher than that of the value 0. 70 eV obtained from the I - V measurements. The series resistance Rs and the ideality factor n are determined from the d ln（ I） /dV plot and are found to be 193.62 Ω and 1.34, respectively. The barrier height and the Rs value are calculated from the H（I） - I plot and are found to be 0.71 eV and 205.95Ω. Furthermore, the energy distribution of the interface state density is determined from the forward bias I - V characteristics by taking into account the bias dependence of the effective barrier height. The interface state density Nss ranges from 6.484×10^11 cm^-2eV^-1 in （Ec - 0.446） eV to 2.801×10^10 cm^-2eV^-1 in （Ec - 0.631） eV, of the Co/n-Si Schottky barrier diode. The results show the presence of a thin interracial layer between the metal and the semiconductor.     

Quantum self-consistent approach to the charge gap of the quasi-one-dimensional organic conductors

We apply an extended quantum self-consistent method, in which quantum fluctuations are taken into account, to the bosonization Hamiltonian to investigate analytically the charge gap in the quasi-one-dimensional (1D) organic conductors at quarter-filling described by the 1D Hubbard model with dimerization and alternate potential on site. It is shown that either dimerization or alternate potential gives rise to the enhancement of the charge gap. Our results are compared with those of the numerical and the other analytical theories. Our results are also consistent with the experimental data of the actual organic materials when the effect of nearest-neighbor Coulomb interaction is taken into account.     

EPR study of the low temperature charge density wave state of o-TaS3

We report an EPR study of the chain conductor o-TaS₃ in the low temperature charge density wave (CDW) state. The EPR spectrum is attributed to Fe³⁺ (S=5/2) impurities. A power law for the temperature dependence of the EPR intensity, (T^−α with an exponent α∼0.8) found below ∼30 K is very close to that previously found in magnetic susceptibility measurements. The possible role of these impurities in the susceptibility data are discussed.     

Numerical analysis of gate leakage current in AlGaN Schottky diodes

We studied theoretically the influence of the tunneling current on the leakage current in AlGaN Schottky diodes. It is shown that the most important conductance mechanism in these structures is the tunneling. The thermionic emission has lower influence on the total current practically throughout the whole reverse bias range and doping concentrations studied. For high doping concentrations we found very slow temperature dependence of the diode current.     

Energy scales and magnetoresistance at a quantum critical point

The magnetoresistance (MR) of CeCoIn₅ is notably different from that in many conventional metals. We show that a pronounced crossover from negative to positive MR at elevated temperatures and fixed magnetic fields is determined by the scaling behavior of quasiparticle effective mass. At a quantum critical point (QCP) this dependence generates kinks (crossover points from fast to slow growth) in thermodynamic characteristics (like specific heat, magnetization, etc.) at some temperatures when a strongly correlated electron system transits from the magnetic field induced Landau-Fermi liquid (LFL) regime to the non-Fermi liquid (NFL) one taking place at rising temperatures. We show that the above kink-like peculiarity separates two distinct energy scales in QCP vicinity - low temperature LFL scale and high temperature one related to NFL regime. Our comprehensive theoretical analysis of experimental data permits to reveal for the first time new MR and kinks scaling behavior as well as to identify the physical reasons for above energy scales.     

Modification of the charge ordering transition in the quasi-one-dimensional conductor (TMTTF)2SbF6 under pressure

We have measured the temperature dependences of the conductance G and the dielectric permittivity ε′ of the (TMTTF)₂SbF₆ compound under a moderate pressure. The maximum of G(T) associated with the Mott-Hubbard localization disappears under pressure. With increasing pressure the peak in ε′(T), corresponding to the charge ordering (CO) phase transition, shifts to lower temperatures and broadens. At pressures above 0.24 GPa, ε′(T) becomes strongly frequency dependent. These modifications are explained in the frame of the extended Hubbard model and a slowing down behavior.     

The effect of interface states, excess capacitance and series resistance in the Al/SiO2/p-Si Schottky diodes

The current-voltage (I-V) characteristics of Al/SiO₂/p-Si metal-insulator-semiconductor (MIS) Schottky diodes were measured at room temperature. In addition the capacitance-voltage (C-V) and conductance-voltage (G-V) measurements are studied at frequency range of 10 kHz-1 MHz. The higher value of ideality factor of 3.25 was attributed to the presence of an interfacial insulator layer between metal and semiconductor and the high density of interface states localized at Si/SiO₂ interface. The density of interface states (N_ss) distribution profile as a function of (E_ss − E_v) was extracted from the forward bias I-V measurements by taking into account the bias dependence of the effective barrier height (Φ_e) at room temperature for the Schottky diode on the order of ≅4 × 10¹³ eV⁻¹ cm⁻²_. These high values of N_ss were responsible for the non-ideal behaviour of I-V and C-V characteristics. Frequency dispersion in C-V and G-V can be interpreted only in terms of interface states. The N_ss can follow the ac signal especially at low frequencies and yield an excess capacitance. Experimental results show that the I-V, C-V and G-V characteristics of SD are affected not only in N_ss but also in series resistance (R_s), and the location of N_ss and R_s has a significant on electrical characteristics of Schottky diodes.     

Strongly correlated Fermi-systems: Non-Fermi liquid behavior, quasiparticle effective mass and their interplay

Basing on the density functional theory of fermion condensation, we analyze the non-Fermi liquid behavior of strongly correlated Fermi-systems such as heavy-fermion metals. When deriving equations for the effective mass of quasiparticles, we consider solids with a lattice and homogeneous systems. We show that the low-temperature thermodynamic and transport properties are formed by quasiparticles, while the dependence of the effective mass on temperature, number density, magnetic fields, etc., gives rise to the non-Fermi liquid behavior. Our theoretical study of the heat capacity, magnetization, energy scales, the longitudinal magnetoresistance and magnetic entropy are in good agreement with the remarkable recent facts collected on the heavy-fermion metal YbRh₂Si₂.