Magnetic field-induced charge transfer to a GaAs/(Ga,Al)As quantum well interface studied by C(e,A0i) photoluminescence

The photoluminescence (PL) from a 300 Å GaAs((Ga,Al)As quantum well (QW) has been studied for a range of excitation powers, in magnetic fields up to 16 T applied both perpendicular to and in the plane of the QW. Particular attention was paid to the intensity of the (e,A₀ⁱ) transition due to Carbon acceptors located at one interface of the QW, in the presence of in-plane fields. The low power in-plane field dependence of the PL is a competition between two effects. At fields up to 12 T charge transfer is observed to and from the interface of the QW, resulting in an increase and subsequent decrease of the acceptor PL intensity. For field values exceeding 12 T the acceptor PL intensity is found to increase again. Whereas the first effect is well described by a composite oscillator model, the latter is suggested to be due to the decreased efficiency of electronic traps, located at the QW interface, for in-plane magnetic fields. These suggestions are confirmed by the excitation power dependence of the PL intensity for in-plane fields.     

Influence of exciton energy on intersubband transition of chirped superlattice GaAs/AlGaAs quantum cascade laser

The influence of exciton energy on intersubband transition was simulated for a chirped supperlattice quantum cascade laser of GaAs/Al_xGa_1-xAs. Exciton energy was modelled as a function of QW width for alloys of various percentages of constituent elements. The results showed that the exciton energy decreased proportionally with increasing QW width. Models were also generated to study exciton energy as a function of the percent alloy contents of Al_xGa_1-xAs barriers for QWs of various widths. Exciton energy showed characteristics of higher discrete energy when QW width was narrower. Transition energy was also simulated from e₁ and e₂ to the 1s exciton state as functions of applied electric field at various QW widths. Our simulation results showed that the transition energy from e₂ to the 1s exciton state increased proportionally to the increasing strength of the electric field. This transition energy was indicative of THz range radiation.     

An exciton in a quantum well in the presence of crossed electric and magnetic fields

An analytical approach to the problem of the Wannier–Mott exciton in a semiconductor quantum well (QW) in the presence of external magnetic and electric fields is developed. The magnetic field is taken to lie in the heteroplanes while the electric field is directed perpendicular to the heteroplanes. Explicit dependencies of the energy levels and wave-functions of the exciton on the magnitudes of the fields for a wide range of the width of the QW are obtained. For the narrow QW, the results are valid for arbitrary electron and hole effective masses. In the case of intermediate and wide QWs, the adiabatic approximation implying the extreme difference of the electron and hole masses is used. In the intermediate QW, the states of the relative motion are the standard Coulomb states affected by the external fields while the states of the centre of mass are the size-quantized states in the QW. We focus particularly on the delocalized states caused by the external electric field and the motion of the excitons centre of mass in the magnetic field. These states are localized far away from the Coulomb centre. A strong influence of the boundaries of the wide QW on the delocalized exciton states is found to occur. Estimates of the expected values are made using typical parameters associated with GaAs QW.     

Multiband calculation of exciton diamagnetic shift in InP/InGaP self-assembled quantum dots

Exciton states in self-assembled InP/In_0.49Ga_0.51P quantum dots subject to magnetic fields up to 50 T are calculated. Strain and band mixing are explicitly taken into account in the single-particle models of the electronic structure, while an exact diagonalization approach is adopted to compute the exciton states. Reasonably good agreement with magneto-photoluminescence measurements on InP self-assembled quantum dots is found. As a result of the polarization and angular momentum sensitive selection rules, the exciton ground state is dark. For in-plane polarized light, the magnetic field barely affects the exciton spatial localization, and consequently the exciton oscillator strength for recombination increases only slightly with increasing field. For z polarized light, a sharp increase of the oscillator strength beyond 30 T is found which is attributed to the enhanced s character of the relevant portion of the exciton wave function.     

Exciton effects on the refractive index and optical absorption in wurtzite quantum wells via a fractional-dimensional space approach

The optical refractive index changes and absorption coefficients of quantum wells (QWs) are theoretically investigated with considering exciton effects within the framework of the fractional-dimensional space approach. The exciton wave functions and bound energies are obtained as a function of spatial dimensionality, and the dimension increases with the well width increasing. Then optical properties are obtained by using the compact-density matrix approach and an iterative method. Numerical results are presented for wurtzite ZnO/Mg_xZn_1−xO QWs. The calculated results show that the changes of refractive index and absorption coefficients are greatly enhanced due to the quantum confinement of exciton. And the smaller the QW width (dimension) is, the larger influence of exciton on the optical properties will be. Furthermore, the exciton effects make the resonant peaks move to a lower energy. In addition, the optical properties are related to the QW width, the incident optical intensity and carrier density.     

Exciton tunnelling in ZnCdSe quantum well/CdSe quantum dots

Exciton tunnelling through a ZnSe barrier layer of various thicknesses is investigated in a Zn_0.72Cd_0.28Se/CdSe coupled quantum well/quantum dots (QW/QDs) structure using photoluminescence (PL) spectra and near resonant pump-probe technique. Fast exciton tunnelling from quantum well to quantum dots is observed by transient differential transmission. The tunnelling time is 1.8, 4.4 and 39 ps for barrier thickness of 10, 15 and 20 nm, respectively.     

Photoluminescence of “dark” excitons in CdMnTe quantum well, embedded in a microcavity

A diluted magnetic semiconductor (DMS) quantum well (QW) microcavity operating in the limit of the strong coupling regime is studied by magnetoptical experiments. The interest of DMS QW relies on the possibility to vary the excitonic resonance over a wide range of energies by applying an external magnetic field, typically about 30 meV for 5 T in our sample. In particular, the anticrossing between the QW exciton and the cavity mode can be tuned by the external field. We observe the anticrossing and formation of exciton polaritons in magneto-reflectivity experiments. In contrast, magneto-luminescence exhibits purely excitonic character. Under resonant excitation conditions an additional emission line is observed at the energy of the dark exciton. The creation of dark excitons is made possible due to heavy hole–light hole mixing in the QW. The emission at this energy could be due to a combined spin flip of an electron and a bright exciton recombination.     

Exciton lifetime in quantum well with vicinal high-density excitons

Radiative lifetime of an exciton in a GaAs quantum well (QW) is controlled by high-density excitons, which restrict the exciton coherence through scattering. In order to circumvent the phase space filling effect of high-density excitons, we have prepared a QW structure in such a way that a reservoir for high-density excitons is separated from the QW. The lifetime increases (up to 30%) with the exciton density in the reservoir and saturates at 1×10¹⁷/cm³. The upper bound lifetime is determined by the excitonic relative motion.     

Strongly confined quantum wire states in strained T-shaped GaAs/InAlAs structures

The confinement energy of T-shaped quantum wires (QWRs), which were fabricated by the cleaved edge overgrowth technique in a way that the QWRs form at the intersection of In_0.2Al_0.8As stressor layers and the overgrown (1 1 0) GaAs quantum well (QW), is examined using micro-photoluminescence spectroscopy. Photoluminescence (PL) signals from individual QWRs can be spatially resolved, since the strained films are separated by 1 μm wide Al_0.3Ga_0.7As layers. We find that due to the tensile strain being transmitted to the QW, the confinement energy of the QWRs rises systematically up to 40 meV with increasing thickness of the stressor layers. By reducing the excitation power to 0.1 μW the QWR PL emission occurs 48 meV redshifted with respect to the QW. All QWR peaks exhibit smooth lineshapes, indicating the absence of pronounced exciton localization.     

Spatial condensation of trapped polaritons in graphene and semiconductor structures

The theoretical and experimental status of the Bose–Einstein Condensation (BEC) of trapped quantum well (QW) polaritons in a microcavity is presented. The results of recent experiments that have shown the possibility to create an in-plane harmonic potential trap for a two-dimensional (2D) exciton polaritons in a cavity are discussed. We report the theory of BEC and of the trapped QW exciton polaritons in a microcavity. In addition, we study the BEC of trapped magnetoexciton polaritons in a graphene layer (GL) embedded in an optical microcavity in high magnetic field. In both cases the polaritons are considered to be in a harmonic potential trap. We compare the theoretical results with the existing experiments and discuss the experimental observation of predicted phenomena.     

Exciton and intracenter luminescence in Cd<Subscript>0.6</Subscript>Mn<Subscript>0.4</Subscript>Te/Cd<Subscript>0.5</Subscript>Mg<Subscript>0.5</Subscript>Te quantum-well structures

Exciton luminescence and intracenter luminescence (IL) of Mn²⁺ ions in Cd_0.6Mn_0.4Te/Cd_0.5Mg_0.5Te structures with quantum wells (QWs) 7, 13, and 26 monolayers thick were studied. It was established that in QWs the intensity of exciton luminescence with respect to that of IL is a few orders of magnitude higher than that in bulk crystals. The spectral position of manganese IL profile changes noticeably in going from a bulk crystal to a QW of the same composition. The nonexponential parts of the IL decay curves are determined by excitation migration and the cooperative upconversion process, whose contribution is high under strong excitation and efficient migration. At 77 K, the IL decay constant τ within the exponential region increases with decreasing QW thickness. The decay constant τ in a QW, unlike in a bulk Cd_0.5Mn_0.5Te crystal, decreases substantially under cooling from 77 to 4 K.     

Photoluminescence linewidth broadening due to alloy/thickness fluctuation of CdxZn1 − xSe/ZnSe triple quantum wells

Photoluminescence (PL) linewidth broadening of Cd_xZn_{1 − x}Se/ZnSe triple quantum wells, grown on GaAs substrates by molecular beam epitaxy (MBE), has been investigated. Various quantum well (QW) samples have been prepared with different QW thickness and composition (Cd-composition). Measured and calculated PL linewidth are compared. Both composition and thickness fluctuations are considered for the calculation with the parameters such as the volume of exciton, nominal thickness and composition of QWs. Surface roughness measured by atomic force microscopy (AFM) is used to estimate the interface roughness. Results show that when Cd-composition increases additional linewidth broadening due to Zn/Cd interdiffusion is enhanced.     

Optical and magnetic properties of (Ga1−xMnx)N/GaN digital ferromagnetic heterostructures

(Ga_1−xMn_x)N/GaN digital ferromagnetic heterostructures (DFHs) and (Ga_1−xMn_x)N/GaN grown on GaN buffer layers by using molecular beam epitaxy have been investigated. The photoluminescence (PL) spectra showed band-edge exciton transitions. They also showed peaks corresponding to the neutral donor-bound exciton and the exciton transitions between the conduction band and the Mn acceptor, indicative of the Mn atoms acting as substitution. The magnetization curves as functions of the magnetic field at 5 K indicated that the saturation magnetic moment in the (Ga_1−xMn_x)N/GaN DFHs decreased with increasing Mn mole fraction and that the saturation magnetic moment and the coercive field in the (Ga_1−xMn_x)N/GaN DFHs were much larger than those in (Ga_1−xMn_x)N thin films. These results indicate that the (Ga_1−xMn_x)N/GaN DFHs hold promise for potential applications in spintronic devices.     

Optical properties of Cd<Subscript>0.6</Subscript>Mn<Subscript>0.4</Subscript>Te/Cd<Subscript>0.5</Subscript>Mg<Subscript>0.5</Subscript>Te quantum-well structures

Emission spectra of three Cd_0.6Mn_0.4Te/Cd_0.5Mg_0.5Te superlattices with Cd_0.6Mn_0.4Te quantum-well (QW) widths of 7, 13, and 26 monolayers, respectively, and the same thickness (46 monolayers) of the Cd_0.5Mg_0.5Te barriers have been studied. The QW width affects the shape and spectral position of the Mn²⁺ intracenter luminescence (IL) band as a result of the crystal field being dependent on the position of the manganese ion with respect to the interface. Measured in identical experimental conditions, the exciton luminescence as compared to the IL is substantially higher in intensity in a QW than in a bulk CdMnTe crystal. Some samples of superlattices and bulk crystals exhibit, in addition to the conventional IL band near 2.0 eV, a weaker band at about 1.45 eV. This band apparently derives from intracenter transitions in the Mn²⁺ ions in the regions where the crystal lattice has the rock-salt rather than the conventional zinc blende structure.     

Anisotropy and dynamic properties of Co2MnGe Heusler thin films

Co₂MnGe films of 30 and 50 nm in thickness were grown by RF-sputtering. Their magnetic anisotropies, dynamic properties and the different excited spin wave modes have been studied using conventional ferromagnetic resonance (FMR) and Microstrip line FMR (MS-FMR). From the in-plane and the out-of-plane resonance field values, the effective magnetization (4πM_eff) and the g-factor are deduced. These values are then used to fit the in-plane angular-dependence of the uniform precession mode and the field-dependence of the resonance frequency of the uniform mode and the first perpendicular standing spin wave to determine the in-plane uniaxial, the four-fold anisotropy fields, the exchange stiffness constant and the magnetization at saturation. The samples exhibit a clear predominant four-fold magnetic anisotropy besides a smaller uniaxial anisotropy. This uniaxial anisotropy is most probably induced by the growth conditions.     

In-plane magnetic anisotropies in Ni/FeMn and Ni90Fe10/FeMn exchange biased bilayers

The in-plane magnetic anisotropy in Ni/FeMn and Ni₉₀Fe₁₀/FeMn exchange-biased bilayers prepared by co-evaporation under molecular beam epitaxy conditions is investigated employing longitudinal magneto-optical Kerr effect (MOKE) and ferromagnetic resonance (FMR). The exchange anisotropy was induced by a magnetic field cooling immediately after the deposition of the bilayers. Besides the induced term, the presence of an additional uniaxial anisotropy in the FM layers was detected both by MOKE and FMR, and the characteristic directions of these two anisotropy terms are not coincident. The interplay between the anisotropy contributions is discussed considering micromagnetic simulations and the in-plane resonance condition for different magnetic field orientation. X-ray diffraction, X-ray photoelectron spectroscopy, and Mössbauer spectroscopy were used to complement the characterization of the samples.     

Band-edge exciton transitions in (Ga1−xMnx)N diluted magnetic semiconductor films with above room temperature ferromagnetic transition

(Ga_1−xMn_x)N thin films grown on GaN buffer layers by using molecular beam epitaxy were investigated with the goal of producing diluted magnetic semiconductors (DMSs) with band-edge exciton transitions for applications in optomagnetic devices. The magnetization curve as a function of the magnetic field at 5 K indicated that ferromagnetism existed in the (Ga_1−xMn_x)N thin films, and the magnetization curve as a function of the temperature showed that the ferromagnetic transition temperature of the (Ga_1−xMn_x)N thin film was above room temperature. Photoluminescence and photoluminescence excitation spectra showed that band-edge exciton transitions in (Ga_1−xMn_x)N thin films appeared. These results indicate that the (Ga_1−xMn_x)N DMSs with a magnetic single phase hold promise for potential applications in spin optoelectronic devices in the blue region of the spectrum.     

Microstructure and magnetic properties of nanocomposite FePt/MgO and FePt/Ag films

An in-plane magnetic anisotropy of FePt film is obtained in the MgO 5 nm/FePt t nm/MgO 5 nm films (where t=5, 10 and 20 nm). Both the in-plane coercivity (H_c∥) and the perpendicular magnetic anisotropy of FePt films are increased when introducing an Ag-capped layer instead of MgO-capped layer. An in-plane coercivity is 3154 Oe for the MgO 5 nm/FePt 10 nm/MgO 5 nm film, and it can be increased to 4846 Oe as a 5 nm Ag-capped layer instead of MgO-capped layer. The transmission electron microscopy (TEM)-energy disperse spectrum (EDS) analysis shows that the Ag mainly distributed at the grain boundary of FePt, that leads the increase of the grain boundary energy, which will enhance coercivity and perpendicular magnetic anisotropy of FePt film.     

Sasers: resonant transitions in narrow-gap semiconductors and in exciton system in coupled quantum wells

Two schemes for steady stimulated phonon generation (saser, i.e., phonon laser) are proposed. The first scheme exploits a narrow-gap indirect semiconductor or analogous indirect gap semiconductor heterostructure where the tuning into resonance of one-phonon transition of electron–hole recombination can be carried out by external pressure, magnetic or electric fields. The second scheme uses one-phonon transition between direct and indirect exciton levels in coupled quantum wells. The tuning into the resonance of this transition can be accomplished by engineering of dispersion of indirect exciton by external in-plane magnetic and normal electric fields. In the second scheme the magnitude of phonon wave vector is determined by magnitude of in-plane magnetic field and, therefore, such a saser is tunable. Both schemes are analyzed and estimated numerically.