Nonlinear properties and stability against DC accelerated aging stress of praseodymium oxide-based ZnO varistors by Er2O3 doping

The microstructure, nonlinear properties, and stability against DC accelerated aging stress of ZnO-Pr₆O₁₁-CoO-based varistors doped with Er₂O₃ was investigated at sintering temperatures of 1300 and 1350 °C. The addition of Er₂O₃ to ZnO-Pr₆O₁₁-CoO-based varistor greatly improved the nonlinear properties and the varistor sintered at 1300 °C exhibited good nonlinearity, with nonlinear exponent of 52.8 and leakage current of 9.8 μA The increase of sintering temperature deteriorated the nonlinear properties, whereas it greatly improved the stability.     

Effect of Al2O3 on the electrical properties of ZnO-Pr6O11-based varistor ceramics

The effect of Al₂O₃ on the electrical properties of ZnO-Pr₆O₁₁-based ceramics is investigated in this work. The average grain size of ZnO increased as the Al₂O₃ content increased from 10.3 to 13.5 μm. It was found that a sample doped with Al₂O₃ of 0.005 mol% showed the highest nonlinear current-voltage characteristics with a nonlinear exponent of 43.8 and a leakage current of 0.66 μA. When the Al₂O₃ content was increased, the donor concentration was increased from 0.51×10¹⁸/cm³ to 1.59×10¹⁸/cm³, but the barrier height was decreased from 1.01 to 0.87 eV. The best electrical stability against aging stress was obtained by doping Al₂O₃ of 0.001 mol%.     

Emission analysis of Dy and Pr:Bi2O3-ZnF2-B2O3-Li2O-Na2O glasses

In this paper, we present the spectral results of Dy³⁺ and Pr³⁺ (1.0 mol%) ions doped Bi₂O₃-ZnF₂-B₂O₃-Li₂O-Na₂O glasses. Measurements of X-ray diffraction (XRD), differential scanning calorimetry (DSC) profiles of these rare-earth ions doped glasses have been carried out. From the DSC thermograms, glass transition (T_g), crystallization (T_c) and melting (T_m) temperatures have been evaluated. The direct and indirect optical band gaps have been calculated based on the glasses UV absorption spectra. The emission spectrum of Dy³⁺:glass has shown two emission transitions ⁴F_7/2→⁶H_15/2 (482 nm) and ⁴F_7/2→⁶H_13/2 (576 nm) with an excitation at 390 nm wavelength and Pr³⁺:glass has shown a strong emission transition ¹D₂→³H₄ (610 nm) with an excitation at 445 nm. Upon exposure to UV radiation, Dy³⁺ and Pr³⁺ glasses have shown bright yellow and reddish colors, respectively, from their surfaces.     

Thermoluminescence studies of LiBa2B5O10:RE (RE=Dy, Tb and Tm)

LiBa₂B₅O₁₀:RE³⁺ (RE=Dy, Tb and Tm) was synthesized by the method of high-temperature solid-state reaction and the thermoluminescence (TL) properties of the samples under the irradiation of the γ-ray were studied. The result showed that Dy³⁺ ion was the most efficient activator. When the concentration of Dy³⁺ was 2 mol%, LiBa₂B₅O₁₀:Dy³⁺ exhibited a maximum TL output. The kinetic parameter of LiBa₂B₅O₁₀:0.02Dy was estimated by the peak shape method, for which the average activation energy was 0.757 eV and the frequency factor was 1.50×10⁷ s⁻¹. By the three-dimensional (3D) TL spectrum, the TL of the sample was contributed to the characteristic f-f transition of Dy³⁺. The dose-response of LiBa₂B₅O₁₀:0.02Dy to γ-ray was linear in the range from 1 to 1000 mGy. In addition, the decay of the TL intensity of LiBa₂B₅O₁₀:0.02Dy was also investigated.     

Writing of two-dimensional crystal curved lines at the surface of Sm2O3-Bi2O3-B2O3 glass by samarium atom heat processing

Two-dimensional crystal curved lines consisting of the nonlinear optical Sm_xBi_1−xBO₃ phase are fabricated at the surface of 8Sm₂O₃·37Bi₂O₃·55B₂O₃ glass by continuous wave Nd:YAG laser (wavelength: 1064 nm) irradiation (samarium atom heat processing) with a power of ∼0.9 W and a laser scanning speed of 5 μm/s. The curved lines with bending angles of 0-90° or with sine-shapes are written by just changing the laser scanning direction. The polarized micro-Raman scattering spectra for the line after bending are the same as those for the line before bending, indicating that the crystal plane of Sm_xBi_1−xBO₃ crystals to the crystal growth direction might be maintained even after the change in the laser scanning direction. It is found from laser scanning microscope observations that the crystal lines at the surface are swelled out smoothly, giving a height of about 10 μm.     

Characterization of Y2O3 gate dielectric on n-GaAs substrates

Physical and electrical properties of sputtered deposited Y₂O₃ films on NH₄OH treated n-GaAs substrate are investigated. The as-deposited films and interfacial layer formation have been analyzed by using X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). It is found that directly deposited Y₂O₃ on n-GaAs exhibits excellent electrical properties with low frequency dispersion (<5%), hysteresis voltage (0.24 V), and interface trap density (3 × 10¹² eV⁻¹ cm⁻²). The results show that the deposition of Y₂O₃ on n-GaAs can be an effective way to improve the interface quality by the suppression on native oxides formation, especially arsenic oxide which causes Fermi level pinning at high-k/GaAs interface. The Al/Y₂O₃/n-GaAs stack with an equivalent oxide thickness (EOT) of 2.1 nm shows a leakage current density of 3.6 × 10⁻⁶ A cm⁻² at a V_FB of 1 V. While the low-field leakage current conduction mechanism has been found to be dominated by the Schottky emission, Poole-Frenkel emission takes over at high electric fields. The energy band alignment of Y₂O₃ films on n-GaAs substrate is extracted from detailed XPS measurements. The valence and conduction band offsets at Y₂O₃/n-GaAs interfaces are found to be 2.14 and 2.21 eV, respectively.     

Synthesis and ion conductivity of (Bi2O3)0.75(Dy2O3)0.25 ceramics with grain sizes from the nano to the micro scale

Using (Bi₂O₃)_0.75(Dy₂O₃)_0.25 nano-powder synthesized by reverse titration co-precipitation method as raw material, dense ceramics were sintered by both Spark Plasma Sintering (SPS) and pressureless sintering. According to the predominance area diagram of Bi-O binary system, the sintering conditions under SPS were optimized. (Bi₂O₃)_0.75(Dy₂O₃)_0.25 ceramics with relative density higher than 95% and an average grain size of 20 nm were sintered in only 10 min up to 500 °C. During the pressureless sintering process, the grain growth behavior of (Bi₂O₃)_0.75(Dy₂O₃)_0.25 followed a parabolic trend, expressed as D² − D₀² = Kt, and the apparent activation energy of grain growth was found to be 284 kJ mol^− 1. Dense (Bi₂O₃)_0.75(Dy₂O₃)_0.25 ceramics with different grain sizes were obtained, and the effect of grain size on ion conductivity was investigated by impedance spectroscopy. It was shown that the total ion conductivity was not affected by the grain size down to 100 nm, however lower conductivity was measured for the sample with the smallest grain size (20 nm). But, although only the δ phase was evidenced by X-ray diffraction for this sample, a closer inspection by Raman spectroscopy revealed traces of α-Bi₂O₃.     

Characteristics of sandwich-structured Al2O3/HfO2/Al2O3 gate dielectric films on ultra-thin silicon-on-insulator substrates

Sandwich-structure Al₂O₃/HfO₂/Al₂O₃ gate dielectric films were grown on ultra-thin silicon-on-insulator (SOI) substrates by vacuum electron beam evaporation (EB-PVD) method. AFM and TEM observations showed that the films remained amorphous even after post-annealing treatment at 950 °C with smooth surface and clean silicon interface. EDX- and XPS-analysis results revealed no silicate or silicide at the silicon interface. The equivalent oxide thickness was 3 nm and the dielectric constant was around 7.2, as determined by electrical measurements. A fixed charge density of 3 × 10¹⁰ cm⁻² and a leakage current of 5 × 10⁻⁷A/cm² at 2 V gate bias were achieved for Au/gate stack /Si/SiO₂/Si/Au MIS capacitors. Post-annealing treatment was found to effectively reduce trap density, but increase in annealing temperature did not made any significant difference in the electrical performance.     

Study of molybdenum coordination state and crystallization behavior in MoO3-La2O3-B2O3 glasses by Raman spectroscopy

The ternary MoO₃-La₂O₃-B₂O₃ glasses containing a large amount of MoO₃ (10-50 mol%) are prepared, and their structure and crystallization behavior are examined from the Raman scattering spectrum measurements and X-ray diffraction analyses. It is found that the glass transition and crystallization temperatures and the thermal stability against crystallization decrease with increasing MoO₃ content. It is suggested that the main coordination state of Mo⁶⁺ ions in the glasses is isolated (MoO₄)²⁻ tetrahedral units giving strong Raman bands at 830-860 and 930 cm⁻¹. It is found that the crystalline phases in the crystallized glasses are mainly LaMoBO₆ and LaB₃O₆, and the main crystallization mechanism in MoO₃-La₂O₃-B₂O₃ glasses is surface crystallization. LaMoBO₆ crystals are found to give strong Raman bands at 810-830 and ∼910 cm⁻¹.     

Ultrafast nonlinear optical properties of Bi2O3-B2O3-SiO2 oxide glass

The ultrafast nonlinear optical properties of Bi₂O₃-B₂O₃-SiO₂ oxide glass were investigated using a femtosecond optical Kerr shutter (OKS) at wavelength of 800 nm. The nonlinear response time of this Bi₂O₃-doped glass was measured to be <90 fs. The nonlinear refractive-index n₂ was estimated to be 1.6 × 10⁻¹⁴ cm²/W. Measurements for the dependence of Kerr signals on the polarization angle between the pump and probe beams showed that the Kerr signals induced by 30-fs pulse laser arose mainly from the photoinduced birefringence effect.     

Investigation of spectroscopic properties and thermal stability of Er/Yb-co-doped Bi2O3-B2O3-Ga2O3 glasses

A series of Er³⁺/Yb³⁺-co-doped 60Bi₂O₃-(40−x) B₂O₃ -xGa₂O₃ (BBGA x=0, 4, 8, 12, 16 mol%) glasses have been prepared. The absorption spectra, emission spectra, fluorescence lifetime of Er³⁺:⁴I_13/2 level and thermal stability were measured and investigated. Three Judd-Ofelt intensity parameters Ω_t (t=2,4,6) (Ω₂=(4.67-5.93)×10⁻²⁰ cm², Ω₄=(1.50-1.81)×10⁻²⁰ cm², Ω₆=(0.92-1.17)×10⁻²⁰ cm²) of Er³⁺ ions were calculated by Judd-Ofelt theory. It is found that the Ω₆ first increases with the increase of Ga₂O₃ content from 0 to 8 mol% and then decreases, which is mainly affected by the number of non-bridging oxygen ions of the glass network. The high peak of stimulated emission cross-section () of Er³⁺: ⁴I_13/2→⁴I_15/2 transition were obtained according to McCumber theory and broad full width at half maximum (FWHM=69-76 nm) of the ⁴I_13/2→⁴I_15/2 transition of Er³⁺ ions were measured. The results indicate that these new BBGA glasses can be used as a candidate host material for potential broadband optical amplifiers.     

Immiscibility in the NiFe2O4-NiCr2O4 spinel binary

The solid solution behavior of the Ni(Fe_1−nCr_n)₂O₄ spinel binary is investigated in the temperature range 400-1200 °C. Non-ideal solution behavior, as exhibited by non-linear changes in lattice parameter with changes in n, is observed in a series of single-phase solids air-cooled from 1200 °C. Air-annealing for 1 year at 600 °C resulted in partial phase separation in a spinel binary having n=0.5. Spinel crystals grown from NiO, Fe₂O₃ and Cr₂O₃ reactants, mixed to give NiCrFeO₄, by Ostwald ripening in a molten salt solvent, exhibited single-phase stability down to about 750 °C (the estimated consolute solution temperature, T_cs). A solvus exists below T_cs. The solvus becomes increasingly asymmetric at lower temperatures and extrapolates to n values of 0.2 and 0.7 at 300 °C. The extrapolated solvus is shown to be consistent with that predicted using a primitive regular solution model in which free energies of mixing are determined entirely from changes in configurational entropy at room temperature.     

The effect of compound addition Dy2O3 and Sn on the structure and properties of NdFeNbB magnets

NdFeNbB with the additions of Dy₂O₃ and Sn permanent magnets have been attained by means of powder-blending technique, and their magnetic properties, temperature performance and microstructure were studied in this paper. The addition of just 2.0 wt% Dy₂O₃ or 0.3 wt% Sn proved to be very effective in improving the permanent magnetic properties of NdFeNbB magnets. Dy₂O₃ additions result in the increase in the H_ci and temperature dependence due to the increase of T_c, formation of (NdDy)-rich phase and grain refinement of Φ phase. This improvement of the coercivity stability of the magnets from the addition of Sn is attributed to the smoothing effect of the Sn addition at the grain boundaries. The magnetic properties, the temperature dependence and Curie temperature of NdFeNbB with Dy₂O₃ and Sn combined addition were found to be considerably improved. From the X-ray diffraction, SEM-EDAX studies and the thermo-magnetic study, the improved properties due to the solution of Dy and Sn to the Φ phase, the reduced N_eff and the smaller Φ phase.     

Reduced dielectric loss and leakage current in CaCu3Ti4O12/SiO2/CaCu3Ti4O12 multilayered films

The CaCu₃Ti₄O₁₂/SiO₂/CaCu₃Ti₄O₁₂ (CCTO/SiO₂/CCTO) multilayered films were prepared on Pt/Ti/SiO₂/Si substrates by pulsed laser deposition method. It has been demonstrated that the dielectric loss and the leakage current density were significantly reduced with the increase of the SiO₂ layer thickness, accompanied with a decrease of the dielectric constant. The CCTO film with a 20 nm SiO₂ layer showed a dielectric loss of 0.065 at 100 kHz and the leakage current density of 6×10⁻⁷ A/cm² at 100 kV/cm, which were much lower than those of the single layer CCTO films. The improvement of the electric properties is ascribed to two reasons: one is the improved crystallinity; the other is the reduced free carriers in the multilayered films.     

Enhanced luminescence of Dy in Y3Al5O12 by Bi co-doping

In the present paper, phosphors with the composition Y_3−x−yAl₅O₁₂:Bi³⁺_x, Dy³⁺_y were synthesized with solid state reactions. The luminescence properties of Bi³⁺ and Dy³⁺ in Y₃Al₅O₁₂(YAG) and the energy transfer from Bi³⁺ to Dy³⁺ were investigated in detail. Bi³⁺ in YAG emits one broad band peaking at 304 nm which can be ascribed to the transition from excited states ³P_{0, 1} to ground state ¹S₀. Dy³⁺ in YAG emits two groups of peaks around 484 and 583 nm, respectively, which can be ascribed to the transitions from excited state ⁴F_9/2 to ground states ⁶H_15/2 and ⁶H_13/2. The co-doping of Bi³⁺ enhances the luminescent intensity of Dy³⁺ by ∼7 times because Bi³⁺ can transfer the absorbed energy to Dy³⁺ efficiently. The mechanism of energy transfer was also discussed.     

Structural properties and electrical characteristics of high-k Dy2O3 gate dielectrics

This paper describes the structural properties and electrical characteristics of thin Dy₂O₃ dielectrics deposited on silicon substrates by means of reactive sputtering. The structural and morphological features of these films after postdeposition annealing were studied by X-ray diffraction and X-ray photoelectron spectroscopy. It is found that Dy₂O₃ dielectrics annealed at 700 °C exhibit a thinner capacitance equivalent thickness and better electrical properties, including the interface trap density and the hysteresis in the capacitance-voltage curves. Under constant current stress, the Weibull slope of the charge-to-breakdown of the 700 °C-annealed films is about 1.6. These results are attributed to the formation of well-crystallized Dy₂O₃ structure and the reduction of the interfacial SiO₂ layer.     

Antiferromagnetic phase transition in garnet-type AgCa2Co2V3O12 and AgCa2Ni2V3O12

Antiferromagnetic phase transition in two vanadium garnets AgCa₂Co₂V₃O₁₂ and AgCa₂Ni₂V₃O₁₂ has been found and investigated extensively. The heat capacity exhibits sharp peak due to the antiferromagnetic order with the Néel temperature T_N=6.39 K for AgCa₂Co₂V₃O₁₂ and 7.21 K for AgCa₂Ni₂V₃O₁₂, respectively. The magnetic susceptibilities exhibit broad maximum, and these T_N correspond to the inflection points of the magnetic susceptibility χ a little lower than T(χ_max). The magnetic entropy changes from zero to 20 K per mol Co²⁺ and Ni²⁺ ions are 5.31 J K⁻¹ mol-Co²⁺-ion⁻¹ and 6.85 J K⁻¹ mol-Ni²⁺-ion⁻¹, indicating S=1/2 for Co²⁺ ion and S=1 for Ni²⁺ ion. The magnetic susceptibility of AgCa₂Ni₂V₃O₁₂ shows the Curie-Weiss behavior between 20 and 350 K with the effective magnetic moment μ_eff=3.23 μ_B Ni²⁺-ion⁻¹ and the Weiss constant θ=−16.4 K (antiferromagnetic sign). Nevertheless, the simple Curie-Weiss law cannot be applicable for AgCa₂Co₂V₃O₁₂. The complex temperature dependence of magnetic susceptibility has been interpreted within the framework of Tanabe-Sugano energy diagram, which is analyzed on the basis of crystalline electric field. The ground state is the spin doublet state ²E(t₂⁶e) and the first excited state is spin quartet state ⁴T₁(t₂⁵e²) which locates extremely close to the ground state. The low spin state S=1/2 for Co²⁺ ion is verified experimentally at least below 20 K which is in agreement with the result of the heat capacity.     

Effect of temperature on the electrical properties of (WO3·Co2O3) composite

The composite with the mole ratio of WO₃ to Co₂O₃ being 3:1 was fabricated by the conventional solid-state reaction process. The electrical properties of the sample were measured at various ambient temperatures in a low electric field (E<200 V/mm). The results demonstrated that the electrical behavior of the composite was sensitive to the variation of the ambient temperature. As the temperature increased, the composite displayed negative differential resistance characteristic within the temperature range of about 50-130 °C. When the temperature was between 140 and 300 °C the composite exhibited sublinear electrical behavior where current rose more weakly than voltage, which is sharply unlike those in varistors. An obviously superlinear property, exploited in varistors, was observed at the temperature of 500 °C. The present results also suggested that the composite did not obey the Arrhenius law. The current-voltage (I-V) properties of the composite could be explained by the double p-n junction and Joule heat.     

Trap-controlled behavior in ultrathin Lu2O3 high-k gate dielectrics

Amorphous Lu₂O₃ high-k gate dielectrics were grown directly on n-type (100) Si substrates by the pulsed laser deposition (PLD) technique. High-resolution transmission electron microscope (HRTEM) observation illustrated that the Lu₂O₃ film has amorphous structure and the interface with Si substrate is free from amorphous SiO₂. An equivalent oxide thickness (EOT) of 1.1 nm with a leakage current density of 2.6×10⁻⁵ A/cm² at 1 V accumulation bias was obtained for 4.5 nm thick Lu₂O₃ thin film deposited at room temperature followed by post-deposition anneal (PDA) at 600 °C in oxygen ambient. The effects of PDA process and light illumination were studied by capacitance-voltage (C-V) and current density-voltage (J-V) measurements. It was proposed that the net fixed charge density and leakage current density could be altered significantly depending on the post-annealing conditions and the capability of traps to trap and release charges.     

Role of WO3 in structural and optical properties of WO3-Al2O3-PbO-B2O3 glasses

Glass samples of composition xAl₂O₃-20PbO-(80−x)B₂O₃ and xWO₃-xAl₂O₃-20PbO-(80−2x)B₂O₃ with x varying from 0% to 10% mole fraction are prepared by melt quench technique. The optical band gap decreases (from 3.21 to 2.37 eV) more for WO₃-Al₂O₃-PbO-B₂O₃ glasses with an addition of WO₃ content. The FTIR spectral studies have pointed out the conversion of structural units of BO₃ to BO₄ and WO₄ to WO₆ in these glasses. The increase in density from 4.51 to 5.80 g cm⁻³ for WO₃-Al₂O₃-PbO-B₂O₃ glasses is observed with an increase in WO₃ content. This is observed that the atomic structure changes more with the incorporation of WO₃. This is due to the formation of WO₆, WO₄ and BO₄ units.