Study of ferromagnetism–superconductivity interactions in Co/Nb multilayers

We investigate Co/Nb multilayers to explore the spontaneous π-phase shift between the superconducting (SC) layers, which is attributed for causing the non-monotonic change of the SC transition temperature (T_c) with the ferromagnetic (FM) layer thickness (t_FM) in several FM/SC multilayered systems. The issue of interfacial roughness is also explored by growing Co/Nb multilayers at various sputtering pressures. Transport measurements show a non-monotonic dependence of T_c on t_FM, and this dependence is insensitive to the structural variation present in the samples, as measured by X-ray scattering.     

Structural and superconducting properties of ion beam sputtered Nb thin films and Nb/Cu bilayers

We present the results of a study of structural and superconducting properties of polycrystalline Nb thin films (200 Å, 300 Å, 400 Å, 700 Å and 1000 Å) and Nb/Cu bilayers (300 Å/300 Å and 400 Å/300 Å) prepared on Si substrates by ion beam sputtering at room temperature. The thicknesses, roughnesses at the surfaces and interfaces were determined by X-ray reflectivity whereas the grain sizes were determined from grazing incidence X-ray diffraction and transmission electron microscopic studies. The superconducting transition temperature (T_C) of Nb thin films are smaller than T_C of bulk Nb. The Nb-200 Å sample does not show T_C down to 2.3 K. The average size of the grains varies from 42 Å for Nb-200 Å sample to 69 Å for Nb-1000 Å sample. Our results show that the T_C in these polycrystalline films is not only limited by its thickness but also by the size of the grains. The Nb films deposited in situ on the Cu layer (Nb/Cu) show a marginal increase in average sizes of the grains as compare to their respective values in Nb films of same thicknesses. As a result a marginal increase in T_C of these films is also observed. The maximum decrease in T_C due to oxygen intake during deposition should be about 0.5 K from its bulk value (9.28 K). We have attributed the large decrease in T_C in our case on the basis of decrease in the Debye temperature and density of states at the Fermi level for Nb thin films as compared to their respective values for bulk Nb.     

Magnetization modification by superconductivity in Nb/Ni80Fe20/Nb trilayers

We present experimental evidences for magnetization modification by superconductivity in a series of Nb/Ni₈₀Fe₂₀/Nb trilayers. By monitoring the magnetization in a zero field as a function of temperature, we observed an irreversibility in magnetization between the cooling and warming branches just above the superconducting transition temperature T_c. These results suggest that the magnetization of the ferromagnetic Ni₈₀Fe₂₀ layer is reduced by the mutual interactions between the ferromagnet and superconductor. Moreover, this effect diminishes with increasing thickness of the Ni₈₀Fe₂₀ layer, which indicates that the interaction between the superconducting and magnetic layers occurs mainly at the vicinity of the interfaces.     

Superconducting and magnetic properties of Nb/Pd 1-xFex/Nb triple layers

The superconducting and magnetic properties of Nb/Pd_1-xFe_x/Nb triple layers with constant Nb layer thickness d_Nb=200 ? and different interlayer thicknesses 3 ?≤ d_PdFe ≤ ? are investigated. The thickness dependence of the magnetization and of the superconducting transition temperature shows that for small iron concentration x the Pd_1-xFe_x layer is likely to be in the paramagnetic state for very thin films whereas ferromagnetic order is established for x ≥ 0.13. The parallel critical field B_c2||(T){B_{c2||}}(T) exhibits a transition from two-dimensional (2D) behavior where the Nb films are coupled across the interlayer, towards a 2D behavior of decoupled Nb films with increasing d_PdFeand/or x. This transition allows a determination of the penetration depth x_F{\xi _F} of Cooper pairs into the Pd_1-xFe_x layer as a function of x. For samples with a ferromagnetic interlayer x_F{\xi _F} is found to be independent of x.     

Accurate determination of the half-lives of95Zr and95Nb

The half-lives of⁹⁵Zr and⁹⁵Nb have been determined byγ-ray counting using a Ge(Li) detector and a NaI(Tl) crystal. Data have been recorded at regular time intervals during time periods up to nine times the respective half-life. The obtained results are T_1/2(⁹⁵Zr)= (64.05±0.06) days and T_1/2(⁹⁵Nb)=(34.97±0.03) days. A detailed discussion of the measurements and the uncertainty assignment is given.     

Superconductivity of Nb/Cu superlattices

The superconducting transition temperature T_c of Nb/Cu superlattices has been investigated as a function of layer thickness. The dependence of T_c above 300 Å layer thickness agrees well with proximity effect theory with no adjustable parameters. Below 300 Å, the data in conjunction with current proximity theory shows that T_c of Nb decreases with layer thickness. This is interpreted as changes in the electronic density of states due to a decrease in the mean-free path.     

Thermal stability,magnetic and magnetocaloric properties of Gd55Co35M10 (M = Si,Zr and Nb) melt-spun ribbons

The thermal stability, magnetic and magnetocaloric properties of Gd₅₅Co₃₅M₁₀ (M = Si, Zr and Nb) melts-pun ribbons were studied. The relatively high reduced glass transition temperature (T_x1/T_m > 0.60) and low melting point (T_m) resulted in excellent glass forming ability (GFA). The Curie temperatures (T_C) of melt-spun amorphous ribbons Gd₅₅Co₃₅M₁₀ for M = Si, Zr and Nb were 166, 148 and 173 K, respectively. For a magnetic field change of 2 T, the values of maximum magnetic entropy change (−ΔS_M)^max for Gd₅₅Co₃₅Si₁₀, Gd₅₅Co₃₅Zr₁₀ and Gd₅₅Co₃₅Nb₁₀ were found to be 2.86, 4.28 and 4.05 J kg⁻¹K⁻¹, while the refrigeration capacity (RC) values were 154, 274 and 174 J kg^–1, respectively. The RC_FWHM values of amorphous alloys Gd₅₅Co₃₅M₁₀ (M = Si, Zr and Nb) are comparable to or larger than that of LaFe_11.6Si_1.4 crystalline alloy. Large values of (−ΔS_M)^max and RC along with good thermal stability make Gd₅₅Co₃₅M₁₀ (M = Si, Zr and Nb) amorphous alloys be potential materials for magnetic cooling operating in a wide temperature range from 150 to 175 K, e.g., as part of a gas liquefaction process.     

Atomistic simulation for the phase stability, site preference and thermal expansion of YFe12−xTx (T=Ti, V, Cr, Mn, Zr, Nb, Mo, W)

The effect of the ternary element on the structural properties of YFe_12−xT_x (T=Ti, V, Cr, Mn, Zr, Nb, Mo, W) has been studied by using interatomic pair potentials based on ab initio method and lattice inversion equations. Calculated results show that adding ternary element T makes the crystal cohesive energy of YFe_12−xT_x decrease markedly, which indicates that T helps stabilize the 1:12 phases. The ternary elements T prefer to occupy the 8i sites in these compounds. The calculated results are found in good agreement with the values deduced from experiments. Furthermore, we have calculated the thermal expansion of YFe₁₁V compounds with the ThMn₁₂ structure. The method utilized in the present investigation offers a rather easy and direct way to study the structural properties of YFe_12−xT_x.     

掺杂对Ni51.5Mn25Ga23.5相变行为和磁性的影响

通过往母合金Ni_51.5Mn₂₅Ga_23.5掺入7种IVA, VA和VIA 过渡族元素得到系列掺杂合金Ni_51.5Mn₂₃M₂Ga_{23 .5}.M为掺杂元素.实验结果表明，掺杂效应一般引起马氏体相变温度的下降，其中，W 的掺杂是7种元素中唯一使相变温度升高的特例，且出现了中间马氏体相变.同时，在价电子 浓度不变的情况下，相变更敏感于原子的尺度效应.实验发现，Ti，Zr，Hf，V四种非磁性元 素的掺杂使Mn原子磁矩减小，而Nb，Ta，W三种非磁性元素的掺杂却可以明显地增大Mn原子 的磁矩.在考察掺杂效应时，不能忽略马氏体相变引起的晶格变化对材料磁性的影响. 关键词： NiMnGa 掺杂 马氏体相变 磁性     

The effect of a nonmagnetic Zr layer on the magnetic and magneto-optical properties of Fe/Zr and Fe/Zr/Fe thin-film systems

The magnetic and magneto-optical properties of nanocrystalline Fe/Zr and Fe/Zr/Fe thin-film systems have been studied using the magneto-optical method. The strong effect of Zr layer thickness t _Zr on the magnetic properties of Fe/Zr samples was discovered. It was found that the value of the saturation field of the Fe/Zr/Fe systems oscillates as a function of t _Zr, which is explained by the oscillating character of the exchange interaction between ferromagnetic layers via a Zr spacer with the change in t _Zr. It was established that the values of the transverse Kerr effect depend on the thicknesses of both magnetic and nonmagnetic layers.     

0-π oscillations in nanostructured Nb/Fe/Nb Josephson junctions

The physics of the π phase shift in ferromagnetic Josephson junctions may enable a range of applications for spin-electronic devices and quantum computing. We investigate transitions from “0” to “π” states in Nb/Fe/Nb Josephson junctions by varying the Fe barrier thickness from 0.5 nm to 5.5 nm. From magnetic measurements we estimate for Fe a magnetic dead layer of about 1.1 nm. By fitting the characteristic voltage oscillations with existing theoretical models we extrapolate an exchange energy of 256 meV, a Fermi velocity of 1.98 ×10⁵ m/s and an electron mean free path of 6.2 nm, in agreement with other reported values. From the temperature dependence of the I_CR_N product we show that its decay rate exhibits a nonmonotonic oscillatory behavior with the Fe barrier thickness.     

The decay of 31 sec98Zr, 2.9 sec98Nb and 51 min98Nb

TheΒ- andγ-radiations of⁹⁸Zr and^{98m, g} Nb have been investigated employing scintillation and semiconductor spectrometers and coincidence techniques. Sources of⁹⁸Nb were produced by the⁹⁸Mo(n, p)⁹⁸Nb reaction, sources of⁹⁸Zr by fission of²³⁵U with thermal neutrons applying chemical separations. For⁹⁸Zr, a half-life of 30.7±0.4 sec and aQ _β-value of 2.3±0.2 MeV were obtained, for the⁹⁸Nb isomers, half-lives of 2.86±0.06 sec and 51.3±0.4 min, andQ _β-values of 4.8±0.2 MeV and 4.5±0.2 MeV, respectively. Noγ-rays were observed in the decay of⁹⁸Zr. The decay of 2.9 sec⁹⁸Nb was found to involve 11γ-ray transitions. In the decay of 51 min⁹⁸Nb, 54γ-transitions were detected. Spin and parity of 1⁺ and 4^? were deduced for the isomeric states of⁹⁸Nb.     

Influence of thickness,width and temperature on critical current density of Nb thin film structures

The density of critical currents j_C in Nb thin films with thickness smaller than 15 nm and width between 100 nm and 10 μm has been measured in a wide temperature range. We have found that the temperature dependencies of j_C in sub-micrometer wide bridges at 0.7T_C < T < T_C are well described by the Ginzburg–Landau de-pairing critical current. In wider bridges already at T < 0.9T_C the j_C value is significantly reduced due to the penetration and de-pinning of magnetic vortices.     

Defects in nanocrystalline Nb films: Effect of sputtering temperature

Thin niobium (Nb) films (thickness 350-400 nm) were prepared on (1 0 0)Si substrate in a UHV chamber using the cathode beam sputtering. The sputtering temperature T_s was varied from 40 up to 500 °C and the influence of the sputtering temperature on the microstructure of thin Nb films was investigated. Defect studies of the thin Nb films sputtered at various temperatures were performed by slow positron implantation spectroscopy (SPIS) with measurement of the Doppler broadening of the annihilation line. SPIS was combined with transmission electron microscopy (TEM) and X-ray diffraction (XRD). We have found that the films sputtered at T_s = 40 °C exhibit elongated, column-like nanocrystalline grains. No significant increase of grain size with T_s (up to 500 °C) was observed by TEM. The thin Nb films sputtered at T_s = 40 °C contain a high density of defects. It is demonstrated by shortened positron diffusion length and a high value of the S parameter for Nb layer compared to the well-annealed (defect-free) bulk Nb reference sample. A drastic decrease of defect density was found in the films sputtered at T_s ≥ 300 °C. It is reflected by a significant increase of the positron diffusion length and a decrease of the S parameter for the Nb layer. The defect density in the Nb layer is, however, still substantially higher than in the well-annealed reference bulk Nb sample. Moreover, there is a layer at the interface between the Nb film and the substrate with very high density of defects comparable to that in the films sputtered at T_s < 300 °C. All the Nb films studied exhibit a strong (1 1 0) texture. The films sputtered at T_s < 300 °C are characterized by a compressive macroscopic in-plane stress due to lattice mismatch between the film and the substrate. Relaxation of the in-plane stress was observed in the films sputtered at T_s ≥ 300 °C. The width of the XRD profiles of the films sputtered at T_s ≥ 300 °C is significantly smaller compared to the films sputtered at lower temperatures. This is most probably due to a lower defect density which results in reduced microstrains in the films sputtered at higher temperatures.     

Elastic properties, thermal expansion coefficients and electronic structures of Ti0.75X0.25C carbides

Elastic properties, thermal expansion coefficients and electronic structures of Ti_0.75X_0.25C carbides (X=W, Mo, Ta, Nb, V, Hf, Zr, Cr and Al) were systematically investigated using ab initio density functional theory (DFT) calculations. The calculated elastic moduli, electronic structures and thermal expansion coefficients α(T) of pure TiC are in good agreement with experimental data and other DFT calculations. Based on a phenomenological formula, the trends of elastic properties and ductile/brittle behavior of Ti_0.75X_0.25C were analyzed. It was found that alloying elements W, Mo, Ta, Nb, V and Hf can increase elastic moduli, while Zr, Cr and Al reduce moduli. The nearly free electron model and Debye approximation were applied in the evaluation of α(T). The anharmonic effect was taken into account by including volume-dependent elastic moduli and Debye temperature. Results show that alloying additions of 3d V, 4d Zr and Mo slightly reduce α(T), while 3d Cr increases α(T), Al, 4d Nb, 5d Hf and W almost keep α(T) unchanged in Ti_0.75X_0.25C at high temperatures. The electronic structures of Ti_0.75X_0.25C were calculated and analyzed, and the electronic density of states was used to interpret variations of elastic properties and ductile/brittle behavior induced by alloying additions.     

Doped niobium superconducting nanowire single-photon detectors

We designed and fabricated a special doped niobium (Nb*) superconducting nanowire single-photon detector (SNSPD) on MgO substrate. The superconductivity of this ultra-thin Nb* film was further improved by depositing an ultra-thin aluminum nitride protective layer on top. Compared with traditional Nb films, Nb* films present higher T _C and J _C. We investigated the dependence of the characteristics of devices, such as cut-off wavelength, response bandwidth, and temperature, on their geometrical dimensions. Results indicate that reduction in both the width and thickness of Nb* nanowires extended the cut-off wavelength and improved the sensitivity. The Nb* SNSPD (50 nm width and 4.5 nm thickness) exhibited single-photon sensitivities at 1,310, 1,550, and 2,010 nm. We also demonstrated an enhancement in the detection efficiency by a factor of 10 in its count rate by lowering the working temperature from 2.26 K to 315 mK.     

Prediction study of structural and elastic properties under pressure effect of M2SnC (M=Ti, Zr, Nb, Hf)

Using first-principles calculations, we have studied the structural and elastic properties of M₂SnC, with M=Ti, Zr, Nb and Hf. Geometrical optimization of the unit cell is in good agreement with the available experimental data. The effect of high pressures, up to 20 GPa, on the lattice constants shows that the contractions along the a-axis were higher than those along the c-axis. We have observed a quadratic dependence of the lattice parameters versus the applied pressure. The elastic constants and their pressure dependence are calculated using the static finite strain technique. A linear dependence of the elastic stiffnesses on the pressure is found. We derived the bulk and shear moduli, Young's moduli and Poisson's ratio for ideal polycrystalline M₂SnC aggregates. We estimated the Debye temperature of M₂SnC from the average sound velocity. This is the first quantitative theoretical prediction of the elastic properties of Ti₂SnC, Zr₂SnC, Nb₂SnC, and Hf₂SnC compounds.     

Magnetoelectricity in the PbFe1/2Nb1/2O3 Ceramics

The magnetodielectric effect (the influence of a magnetic field H on the dielectric constant ?) and the magnetoelectric effect (the influence of an electric field E on the magnetoelectric constant ??) of the PbFe_1/2Nb_1/2O₃ ceramics have been investigated at temperatures T in the range from 50 to 200°C, including the Curie point T _C ? 98°C. It has been demonstrated that there is a correlation of these effects with the shift of the ferroelectric-paraelectric phase transition temperature in a magnetic field.     

Low-temperature phase transformations in weakly doped quantum paraelectrics: novel features and quantum reentrant dipolar glass state in KTa0.982Nb0.018O3

An unusual sequence of phase transitions (PT) and reentrant dipole glass-like phase formation at low temperatures was found recently in KTaO₃ weakly doped with Li and Nb (K_0.9986Li_0.0014Ta_0.976Nb_0.024O₃) [Phys. Rev. B 63 (2001) 172]. We report on detailed low frequency (100 Hz-1 MHz) permittivity and Raman light scattering studies of similar composition, but without Li admixture, KTa_1−xNb_xO₃ with x=0.018 (KTN1.8). The aim of the study is to answer the question if the reentrant dipole glass-like phase exists in KTN1.8 and what is the microscopic origin of this phase. A detailed study of the sharp low-temperature PT observed at T_C∼27 K revealed properties inherent to the reentrant glass-type state at lower temperatures. The substitution of Nb for Ta influences the TO₁ soft lattice mode and leads to PT with the long-range ferroelectric ordering. A crossover to an order-disorder polar microregion dynamics with a non-standard ε′(T) behaviour and dipole glass-like formation were found below T_C (at ∼15 K), which is attributed to the randomness of the Nb distribution. A crossover to the long-range order was found under a dc bias field.