Conversion of VUV to UV and visible in K5Li2LnF10 containing rare-earth from cerium group (Ln=La, Ce, Pr, Nd)

The potential of single crystals K₅Li₂LnF₁₀, for applications as VUV excited phosphors has been examined. The crystals were doped with lanthanide ions (Ce³⁺–Nd³⁺) with concentrations up to 100 at%. The self-quenching of luminescence is strongly reduced in this material. Luminescence spectra in the 50,000–10,000 cm⁻¹ range and excitation spectra in the 40,000–250,000 cm⁻¹ spectral range have been recorded at room and low temperature. Intense visible emission has been observed for Nd³⁺ and Pr³⁺. For the Pr³⁺ ions strong the ¹S₀–¹I₆ transition has been recorded only for concentrated crystals. Efficient conversion of VUV excitation to UV–VIS emission was observed in crystals doped with 3 and 100 at% of cerium. In both cerium-activated crystals the lifetimes of f–d transitions were equal to 32 ns.     

Optical absorption of isotopically enriched Li2B4O7 single crystals irradiated by thermal neutrons

Induced absorption spectra in the range 200–900 nm at 77 and 290 K for Li₂B₄O₇ single crystals, isotopically Li and B enriched are presented after irradiation of these crystals by thermal neutrons with fluence 1.8×10¹⁶ cm⁻². The dependence of induced absorption spectra on the isotope composition was revealed: for ⁶Li₂¹⁰B₄O₇ and ⁷Li₂¹⁰B₄O₇ crystals intensive band in the region of 280–294 nm was observed. Under substitution of ⁷Li isotope by ⁶Li in the lithium tetraborate lattice no changes in the absorption spectra were observed. The nuclear reaction ¹⁰B(n,)⁷Li is proposed to be the main mechanism of formation of the radiation defects.     

Defect versus nanocrystal luminescence emitted from room temperature and hot-implanted SiO2 layers

Silicon nanocrystals have been synthesized in SiO₂ matrix using Si ion implantation. Si ions were implanted into 300-nm-thick SiO₂ films grown on crystalline Si at energies of 30–55 keV, and with doses of 5×10¹⁵, 3×10¹⁶, and 1×10¹⁷ cm⁻². Implanted samples were subsequently annealed in an N₂ ambient at 500–1100°C during various periods. Photoluminescence spectra for the sample implanted with 1×10¹⁷ cm⁻² at 55 keV show that red luminescence (750 nm) related to Si-nanocrystals clearly increases with annealing temperature and time in intensity, and that weak orange luminescence (600 nm) is observed after annealing at low temperatures of 500°C and 800°C. The luminescence around 600 nm becomes very intense when a thin SiO₂ sample is implanted at a substrate temperature of 400°C with an energy of 30 keV and a low dose of 5×10¹⁵ cm⁻². It vanishes after annealing at 800°C for 30 min. We conclude that this luminescence observed around 600 nm is caused by some radiative defects formed in Si-implanted SiO₂.     

On the luminescence of LiBaF3:Eu

From the temperature dependence of the line—band luminescence intensity ratio of LiBaF₃:Eu²⁺ a 4f−5d activation energy (Δ) of 800 cm⁻¹ is derived, being much higher than the value reported in the literature (100 cm⁻¹). The temperature dependence of the luminescence decay can be well described with Δ = 800 cm⁻¹ and with 4f−4f and 5d−4f radiative probabilities of 4×10²s⁻¹ and 6×10⁵s⁻¹, respectively.     

The effect of boron ion implantation and annealing on the microstructure and electrical characteristics of the diamond films

Diamond films were doped by boron ion-implantation with the energy of 120 keV. The implantation dose ranged from 10¹⁴ to 10¹⁷ cm⁻². After the implantation, the diamond films were annealed at different temperatures (600–750°C) for different times (2–15 min). Scanning Electronic Microscope, Raman and Secondary Ion Mass-spectrum were used to investigate the effect of boron ion implantation and annealing on the microstructure of the diamond films. The electrical resistivities of the diamond films were also measured. It was found that the best dose of boron ion-implantation into the diamond film was around 10¹⁶ cm⁻². The appropriate annealing temperature and time was 700°C and 2–5 min, respectively. After implantation, the resistivities were reduced to 0.1 Ω cm (almost nine orders lower than the unimplanted diamond films). These results show that boron ion implantation can be an effective way to fabricate P-type diamond films.     

NIR-FT-SERS of 4″-trimethylsilylethylsulfanyl-4,4′-di(phenyleneethynylene)benzenethiol on Au nanospheres

Oligo(phenyleneethynylene) (OPE) compounds have been identified as promising molecular electronic bridges. Self-assembled monolayers of 4″-trimethylsilylethylsulfanyl-4,4′-phenyleneethynylenebenzene thiol (OPE′) on Au were characterized by surface-enhanced Raman scattering (SERS). The FT-Raman spectrum of OPE′ shows three C–S bands at 834, 1086, and 1131 cm⁻¹. From the FT-Raman to the SERS spectra, the 1086 cm⁻¹ band exhibits a 9 cm⁻¹ red shift. Chemisorption of OPE′ to the gold surface occurs via oxidative cleavage of the disulfide bond and the formation of the Au–S bond. The Au–S vibration is visible in the SERS spectra at 257 cm⁻¹. Peaks due to the S–S and S–H stretch are observed at 544 and 2519 cm⁻¹, respectively, in the FT spectrum, but are unobserved in the surface-enhanced spectra. The C–H stretching region (2700–3350 cm⁻¹) in the spectrum of neat OPE′ shows three distinct bands, whereas the SERS spectra show a single broad band. Assignments of vibrational bands were based on DFT calculations performed at the B3LYP level with good agreement between theoretical and experimental values. An average percent difference of 2.52 was obtained for the non-CH stretching frequencies.     

Electron irradiation of polyesterurethane: study of chemical and structural modifications using FTIR, UV spectroscopy and GPC

To understand the electron irradiation effects on polymers, a polyesterurethane (ESPU) was irradiated by a 200 keV electron beam perpendicular to the surface under a vacuum of 0.04 Torr with electron fluxes of 0.25–1.25×10¹³ s⁻¹ on the irradiated zone. To perform a study of ESPU degradation versus the electron's penetration depth, a stratified structure was made with seventeen 30-μm-thick films. The irradiation was performed at both room temperature (293 K) and 77 K. The applied fluence was in the range of 10¹⁴–10¹⁷ cm⁻². Chemical transformations, such as degradation and oxidation, are studied by FTIR, by following NH and OH bond evolution, and by UV spectroscopy, by following the absorbance shift towards the visible region. These effects are analyzed versus depth, fluence and electron flux. Structural transformations are also characterized by GPC for soluble samples. An increase of crosslinking rate of the polymer is observed and analyzed.     

TEA-CO2 laser generation of ultrasound in non-metals

An industrial TEA-CO₂ laser, operating at a wavelength of 10.6 μm, has been used to produced broadband ultrasonic pulses in polymers. The generation mechanism falls into three categories. At low power densities ≤ 10⁷ W cm⁻² a thermoelastic regime predominates. As the power density is increased in the range (1–5) × 10⁷ W cm⁻² ablation of the material surface plays an increasingly important role in the acoustic generation. Thirdly, at greater power densities, plasma breakdown just above the material surface serves as the means of generation. This paper describes the acoustic sources for these types of generation mechanism and presents theoretically calculated acoustic waveforms to match those recorded experimentally.     

Influence of the Sb dopant distribution on far infrared photoconductivity in Ge:Sb blocked impurity band detectors

Extended long wavelength response to 200 μm (50 cm⁻¹) has been observed in Ge:Sb blocked impurity band (BIB) detectors with N_D1×10¹⁶ cm⁻³. The cut-off wavelength increases from 150 μm (65 cm⁻¹) to 200 μm (50 cm⁻¹) with increasing bias. The responsivity at long wavelengths was lower than expected. This can be explained by considering the observed Sb diffusion profile in a transition region between the blocking layer and active layer. BIB modeling is presented which indicates that this Sb concentration profile increases the electric field in the transition region and reduces the field in the blocking layer. The depletion region consists partially of the transition region between the active and blocking layer, which could contribute to the reduced long wavelength response. The field spike at the interface is the likely cause of breakdown at a lower bias than expected.     

Effect of oxide thickness on the capacitance and conductance characteristics of MOS structures

In this work, the investigation of the interface states density and series resistance from capacitance–voltage (C–V) and conductance–voltage (G–V) characteristics in Au/SnO₂/n-Si (MOS) structures prepared at various SnO₂ layer thicknesses by spray deposition technique have been reported. It is fabricated five samples depending on deposition time. The thicknesses of SnO₂ films obtained from the measurement of the oxide capacitance in the strong accumulation region for MOS Schottky diodes are 37, 79, 274, 401, and 446 Å, for D1, D2, D3, D4, and D5 samples, respectively. The C–V and G–V measurements of Au/SnO₂/n-Si MOS structures are performed in the voltage range from −6 to +10 V and the frequency range from 500 Hz to 10 MHz at room temperature. It is observed that peaks in the forward C–V characteristics appeared because of the series resistance. It has been seen that the value of the series resistance R_s of samples D1 (47 Ω), D2 (64 Ω), D3 (98 Ω), D4 (151 Ω), and D5 (163 Ω) increases with increasing the oxide layer thickness. The interface state density D_it ranges from 2.40×10¹³ cm⁻² eV⁻¹ for D1 sample to 2.73×10¹² cm⁻² eV⁻¹ for D5 sample and increases with increasing the oxide layer thickness.     

Study of fossil tracks due to VH and VVH groups of cosmic ray nuclei in olivine crystals from Luna-16 and Luna-24

The olivine crystals from lunar regolith samples taken by the Soviet unmanned spacecrafts Luna-16 and Luna-24 were investigated. Eleven 0.5 –1.0 mm size olivine crystals were mounted in epoxy, polished and then etched in modified WO₄ solution. The Fe-group track densities up to 10⁸ tracks.cm⁻² (Fe-group) were measured under optical microscope. The tracks of length greater than 30 microns due to Z ≥ 36 cosmic ray nuclei are counted for VVH tracks density for all the crystals. The VVH / VH track densities ratio for these lunar olivine crystals varies from 1.25×10⁻⁴ to 2×10⁻³. It corresponds to the averaged depth of these crystals in lunar soil of 2–8 cm during galactic cosmic ray exposure. Lunar crystals are well suited for VVH track studies due to a very high track density. Two crystals were annealed at 430°C for 32 hrs. This procedure eliminates iron group tracks completely and leaves etchable tracks of nuclei with Z 50 even in the olivine crystals with Fe-group tracks up to 1–2×10⁸ tracks cm⁻². We were able to measure two tracks with the length 195 and 210μm which were produced by Th---U group of Galactic cosmic ray nuclei.     

Adsorption of carbon monoxide on Pt{100} surfaces: dependence of the CO stretching vibrational frequency on surface coverage

We have used the ab initio cluster model approach to study the dependence of the CO stretching frequency on CO surface coverage. We have also investigated the relative importance of the various factors that can affect the position of the CO stretching band as coverage increases. Two effects can change the CO stretching frequency: the adsorbate–adsorbate dipole coupling, which is a purely physical effect, and the changes in the 2π^* CO molecular orbitals, due to the different chemical environment at higher coverages. From our vibrational analysis, we conclude that CO–CO dipole coupling is the main cause of the upward shift of the CO stretching band when the CO coverage is increased. The population of the 2π^* CO molecular orbitals does not change at any coverage within the region considered. We have also estimated the ¹²CO–¹³CO dipole coupling, which previous studies have assumed to be weak. Our results demonstrate that the ¹²CO–¹³CO dipole coupling is indeed weak compared with the ¹²CO–¹²CO dipole coupling. At a CO surface coverage of 0.5 monolayers (ML), we have calculated a band shift of 40 cm⁻¹ to higher frequency. However, we should point out that when one ¹²CO molecule is surrounded by a ¹³CO environment, the ¹²CO stretching band shifts 10 cm⁻¹ upwards. We have also computed the heat of adsorption of CO on Pt{100}-(1×1) as a function of CO coverage. The initial heat of adsorption is calculated to be about 192 kJ mol⁻¹ and then drops to 180 kJ mol⁻¹ at 0.5 ML. These results agree quite well with recent calorimetric measurements. Besides that, we have estimated that the CO–CO interaction energy at 0.5 ML is repulsive and has a value of 5 kJ mol⁻¹.     

Electrical characterization of low temperature deposited TiO2 films on strained-SiGe layers

Thin films of titanium dioxide have been deposited on strained Si_0.82Ge_0.18 epitaxial layers using titanium tetrakis-isopropoxide [TTIP, Ti(O-i-C₃H₇)₄] and oxygen by microwave plasma enhanced chemical vapor deposition (PECVD). The films have been characterized by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). Dielectric constant, equivalent oxide thickness (EOT), interface state density (D_it), fixed oxide charge density (Q_f/q) and flat-band voltage (V_FB) of as-deposited films were found to be 13.2, 40.6 Å, 6×10¹¹ eV⁻¹ cm⁻², 3.1×10¹¹ cm⁻² and −1.4 V, respectively. The capacitance–voltage (C–V), current–voltage (I–V) characteristics and charge trapping behavior of the films under constant current stressing exhibit an excellent interface quality and high dielectric reliability making the films suitable for microelectronic applications.     

Measurement of the absolute oscillator strengths of gadolinium using an atomic vapor produced by electron beam heating

The absolute values of the oscillator strength ƒ were measured for the six spectral lines of Gd by means of laser absorption spectroscopy with the atomic vapor produced by electron beam heating. The ƒ values obtained for the transition are 0–17381 cm⁻¹, 215–17750 cm⁻¹, 533–17795 cm⁻¹, 999–18070 cm⁻¹, 999–17931 cm⁻¹, 1719–18070 cm⁻¹ were obtained to be 0.0036, 0.012, 0.014, 0.019, 0.0075 and 0.039, respectively. The error of ƒ values was 24% due to uncertainty of metastable states' density.     

Structural and compositional analysis of InBixAsySb(1−x−y) films grown on GaAs(0 0 1) substrates by liquid phase epitaxy

The growth of epitaxial InBi_xAs_ySb_(1−x−y) layers on highly lattice mis-matched semi-insulating GaAs substrates has been successfully achieved via the traditional liquid phase epitaxy. Orientation and single crystalline nature of the film have been confirmed by X-ray diffraction. Scanning electron micrograph shows abrupt interface at micrometer resolution. Surface composition of Bi(x) and As(y) in the InBi_xAs_ySb_(1−x−y) film was measured using energy dispersive X-ray analysis and found to be 2.5 and 10.5 at.%, respectively, and was further confirmed with X-ray photoelectron spectroscopy. Variation of the composition with depth of the film was studied by removing the layers with low current (20 μA) Ar⁺ etching. It was observed that with successive Ar⁺ etching, In/Sb ratio remained the same, while the As/Sb and Bi/Sb ratios changed slightly with etching time. However after about 5 min etching the As/Sb and Bi/Sb ratios reached constant values. The room temperature band gap of InBi_0.025As_0.105Sb_0.870 was found to be in the range of 0.113–0.120 eV. The measured values of mobility and carrier density at room temperature are 3.1×10⁴ cm² V⁻¹ s⁻¹ and 8.07×10¹⁶ cm⁻³, respectively.     

Cross section of the charged current reaction C(ve, e)Ng.s.

The charged current nuclear transition ¹²C(v_e, e⁻)¹²N_g.s. has been observed in the KARMEN experiment. The flux average cross section for v_e from μ⁺ decay at rest is determined to be σ = [8.1±0.9(stat.)±0.75 (syst.)]×10⁻⁴²cm². For the first time also the energy dependence of the cross section has been measured for neutrino energies up to 50 MeV.     

Structural and electrical properties of crystalline (1−x)Ta2O5−xTiO2 thin films fabricated by metalorganic decomposition

Polycrystalline (1−x)Ta₂O₅−xTiO₂ thin films were formed on Si by metalorganic decomposition (MOD) and annealed at various temperatures. As-deposited films were in the amorphous state and were completely transformed to crystalline after annealing above 600 °C. During crystallization, a thin interfacial SiO₂ layer was formed at the (1−x)Ta₂O₅−xTiO₂/Si interface. Thin films with 0.92Ta₂O₅–0.08TiO₂ composition exhibited superior insulating properties. The measured dielectric constant and dissipation factor at 1 MHz were 9 and 0.015, respectively, for films annealed at 900 °C. The interface trap density was 2.5×10¹¹ cm⁻² eV⁻¹, and flatband voltage was −0.38 V. A charge storage density of 22.8 fC/μm² was obtained at an applied electric field of 3 MV/cm. The leakage current density was lower than 4×10⁻⁹ A/cm² up to an applied electric field of 6 MV/cm.     

Study of the ferroelectric–paraelectric phase transition of NaH3(SeO3)2 single crystals by H and Na NMR

The ¹H and ²³Na spin–lattice and spin–spin relaxation times of NaH₃(SeO₃)₂ single crystals grown using the slow-evaporation method were measured as functions of temperature and frequency in the ferroelectric and paraelectric phases. The changes in the symmetry of the (SeO₃)²⁻ dimers as a result of the ferroelectric–paraelectric phase transition are associated with large changes in the spin–lattice and spin–spin relaxation times, and in the number of resonance lines. The large changes in the relaxation times at 195 K indicate that the H and Na ions are significantly affected by this transition. The change in the number of resonance lines for the ¹H and ²³Na nuclei means that the orientations of the (SeO₃)²⁻ dimers and the environments of the Na ions change at T_C. Therefore, the orientations of the (SeO₃)²⁻ dimers and the environments of the Na ions play important roles in the phase transitions. In conclusion, the ferroelectric–paraelectric phase transition of NaH₃(SeO₃)₂ is accompanied by changes in hydrogen-bond structure and distortions of the (SeO₃)²⁻ and Na⁺ ion lattices, which form a slightly distorted octahedron.     

The IR spectra of Mg5C(CO) complexes on the (0 0 1) surfaces of polycrystalline and single crystal MgO

The FTIR spectroscopy of carbon monoxide adsorbed on polycrystalline MgO smoke has been investigated as a function of the CO equilibrium pressure at constant temperature (60 K) (optical isotherm) and of the temperature (in the 300–60 K range) at constant CO pressure (optical isobar). In both cases the spectra fully reproduce those of CO adsorbed on the (0 0 1) surface of UHV cleaved single crystals [Heidberg et al., Surf. Sci. 331–333 (1995) 1467]. This result, never attained in previous investigations on dispersed MgO, contribute to bridging the gap which is commonly supposed to exist between surface science and the study of “real” (defective) systems. Depending on the surface coverage θ the main spectral features due to the CO/MgO smoke interaction are a single band shifting from 2157.5 (at θ→0) to 2150.2 cm⁻¹ (at θ=1/4) or a triplet, at 2151.5, 2137.2 and 2132.4 cm⁻¹ (at θ>1/4). These manifestations are due to the ν(CO) modes of Mg_5C²⁺· · · CO adducts formed on the (0 0 1) terminations of the cubic MgO smoke microcrystals. The formation of the CO monolayer is occurring in two different phases: (i) a first phase with CO oscillators perpendicularly oriented to the surface (2157–2150 cm⁻¹) and (ii) a second phase constituted by an array of coexisting perpendicular and tilted species (triplet at 2151.5, 2137.2 and 2132.4 cm⁻¹). A much weaker feature at 2167.5–2164 cm⁻¹ is assigned to Mg_4C²⁺· · · CO adducts at the edges of the microcrystals. The heat of adsorption of the perpendicular Mg_5C²⁺· · · CO complex in the first phase has been estimated from the optical isobar and results to be 11 kJ mol⁻¹.     

Conductivity of two-dimensional crystals over liquid helium for different holding fields

The results are presented of the experimental study of electron crystals over liquid helium with surface electron density of 3.2×10⁸ and 6.4×10⁸ cm⁻² (melting temperatures 0.4 and 0.58 K) at temperature 83 mK and for holding electric fields 300–1200 V/cm. The measurements are performed in the frequency range 1–14 MHz where the coupled phonon–ripplon resonances are observed in the experimental cell. The real and imaginary parts of the complex conductivity of the crystal have been obtained as a result of analysis of an electron layer response on exciting ac voltage with frequency corresponding to the mode (0,1) of the coupled phonon–ripplon oscillations. An analysis of the results allows us to suppose that structural defects of the electron crystal play an essential role in dissipation processes.