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本文对Hg1-xCdxTe的低频吸收带,提出另一种解释。把Hg1-xCdxTe作为具有0—25%Cd(或Hg)替位杂质的HgTe(或CdTe)晶体,用格林函数计算含有一个Cd(或Hg)的HgTe(或CdTe)双原子链振动谱,进而讨论Hg1-xCdxTe混晶振动模的特性,结果表明Hg1-xCdxTe在k→0存在频率不趋于零的声学声子,它们有条件吸收远红外波段的光子,形成低频吸收带。它能说明已报道的实验上观察到的低频吸收带的主要特征,并表明对光学声子存在双模行为的其它混晶,在远红外吸收谱中很可能存在类似的低频吸收带。
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室温300K下,由于AlxGa1-xN的带隙宽度可以从GaN的3.42eV到AlN的6.2eV之间变化,所以AlxGa1-xN是紫外光探测器和深紫外LED所必需的外延材料.高质量高铝组分AlxGa1-xN材料生长的一大困难就是AlxGa1-xN与常用的蓝宝石衬底之间大的晶格失配和热失配.因而采用MOCVD在GaN/蓝宝石上生长的AlxGa1-xN薄膜由于受张应力作用非常容易发生龟裂.GaN/AlxGa1-xN超晶格插入层技术是释放应力和减少AlxGa1-xN薄膜中缺陷的有效方法.研究了GaN/AlxGa1-xN超晶格插入层对GaN/蓝宝石上AlxGa1-xN外延薄膜应变状态和缺陷密度的影响.通过拉曼散射探测声子频率从而得到材料中的残余应力是一种简便常用的方法,AlxGa1-xN外延薄膜的应变状态可通过拉曼光谱测量得到.AlxGa1-xN外延薄膜的缺陷密度通过测量X射线衍射得到.对于具有相同阱垒厚度的超晶格,例如4nm/4nm,5nm/5nm,8nm/8nm的GaN/Al0.3Ga0.7N超晶格,研究发现随着超晶格周期厚度的增加AlxGa1-xN外延薄膜缺陷密度降低,AlxGa1-xN外延薄膜处于张应变状态,且5nm/5nmGaN/Al0.3Ga0.7N超晶格插入层AlxGa1-xN外延薄膜的张应变最小.在保持5nm阱宽不变的情况下,将垒宽增大到8nm,即十个周期的5nm/8nmGaN/Al0.3Ga0.7N超晶格插入层使AlxGa1-xN外延层应变状态由张应变变为压应变.由X射线衍射结果计算了AlxGa1-xN外延薄膜的刃型位错和螺型位错密度,结果表明超晶格插入层对螺型位错和刃型位错都有一定的抑制效果.透射电镜图像表明超晶格插入层使位错发生合并、转向或是使位错终止,且5nm/8nmGaN/Al0.3Ga0.7N超晶格插入层导致AlxGa1-xN外延薄膜中的刃型位错倾斜30°左右,释放一部分压应变. 相似文献
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用分子束外延生长了23周期的GexSi1-x/Si超晶格,用计算机控制的衍射仪(CuKa辐射)测量了X射线衍射曲线,共观察到13级超晶格结构的衍射峰。超晶格的周期和Ge平均含量可以根据考虑折射修正的布喇格定律得出。用光学多层膜反射理论分析衍射曲线可以确定超晶格的结构参数,第2级衍射峰与第一级峰的强度比对应于超晶格两种材料的相对厚度变化非常灵敏,通过比较实验和计算的I2/I1值,可以确定Si,GexSi1-x层的厚度以及合金组份x。用光学多层膜反射理谁计算得到的衍射曲线与实验曲线趋于一致。
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通过变磁场霍耳测量研究了MBE生长的Hg0.80Mg0.20Te薄膜在15 —250K温度范围内的输运特性.采用迁移率谱(MS)和多载流子拟合过程(MCF)相结合的方法对 实验数据进行了分析,由该方法获得的结果和Shubnikov de Hass(SdH)振荡测量的结果都证 明材料中存在二维(2D)电子和三维(3D)电子.其中2D电子主要来自于Hg1-xMgxTe-CdTe的界面积累层或Hg1-x 关键词:
变磁场霍耳测量
界面积累层
二维电子气
1-xMgxTe')" href="#">Hg1-xMgxTe 相似文献
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利用Raman显微镜系统对两块用MOCVD方法在Cd0.96Zn0.04Te衬底上生长的Hg0.8Cd0.2Te外延薄膜样品在光谱范围50~5000cm-1进行了测量,在其中的一块样品上首次发现了143eV至193eV范围内出现的具有周期结构的光致发光峰,该发光峰对应的能带中心位于Hg0.8Cd0.2Te外延层导带底上方173eV,在另外一块外延薄膜样品中仅观察到四个Raman散射峰,没有周期结构的发光峰。为了分析上述光致发光的起因,对两块样品进行了X射线的双晶回摆曲线样品结构分析,得出样品在143eV至193eV范围的光致发光峰是由于改进MOCVD生长工艺提高了样品的结构质量所致,通过分析指出该光致发光峰是来源于Hg0.8Cd0.2Te外延层中的阴性离子空位的共振能级。 相似文献
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利用卢瑟福背散射/沟道技术对在蓝宝石衬底上用金属有机化学气相沉积方法生长的有GaN缓冲层(>2μm)的一系列不同Al和In含量的AlInGaN薄膜进行组分及结晶品质的测量;并结合高分辨X射线衍射技术,通过对AlInGaN的对称(0002)面,及非对称(1015)面的θ—2θ扫描及倒空间扫描,可以精确测定AlInGaN外延层的晶格常数及水平和垂直方向的应变.实验结果表明AlInGaN 薄膜中不同含量Al和In对其应变有较大的影响,结合Vegard定理,对这一现象给出了理论的解释.
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AlInGaN
高分辨X射线衍射
卢瑟福背散射/沟道
弹性应变 相似文献
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采用分子束外延的方法在BaF2(111)衬底上制备出了高质量的Pb1-xMnxSe(0≤x≤0.0681)薄膜.X射线衍射结果表明,Pb1-xMnxSe薄膜为立方相NaCl型结构,没有观察到MnSe相分离现象,薄膜的取向为平行于衬底(111)晶面.晶格常数随着Mn含量的增加逐渐减小,Mn含量由Vegard公式得到.通
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1-xMnxSe外延薄膜')" href="#">Pb1-xMnxSe外延薄膜
透射光谱
带隙
折射率 相似文献
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Lorenz K Franco N Alves E Watson IM Martin RW O'Donnell KP 《Physical review letters》2006,97(8):085501
Monte Carlo simulations of anomalous ion channeling in near-lattice-matched AlInN/GaN bilayers allow an accurate determination of the strain state of AlInN by Rutherford backscattering or channeling. Although these strain estimates agree well with x-ray diffraction (XRD) results, XRD composition estimates are shown to have limited accuracy, due to a possible deviation from Vegard's law, which we quantify for this alloy. As the InN fraction increases from 13% to 19%, the strain in AlInN films changes from tensile to compressive with lattice matching predicted to occur at [InN] = 17.1%. 相似文献
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This paper carries out first principles calculation of the structure,electronic and optical properties of Be x Zn 1 x O alloys based on the density-functional theory for the compositions x = 0.0,0.25,0.5,0.75,1.0.The lattice constants deviations of alloys obey Vegard’s law well.The Be x Zn 1 x O alloys have the direct band gap(Γ-Γ) character,and the bowing coefficients are less than the available theoretical values.Moreover,it investigates in detail the optical properties(dielectric functions,absorption spectrum and refractive index) of these ternary mixed crystals.The obtained results agree well with the available theoretical and experimental values. 相似文献
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Composition-induced structural modifications in the quaternary CuIn1-xGaxSe2 thin films: bond properties versus Ga content
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In this paper the dependence of structural properties of the quaternary CuIn1-xGaxSe2 films with tetragonal structure on the Ga content has been systematically investigated by Raman scattering and x-ray diffraction spectra. The shift of the dominant A1 mode, unlike the lattice constants, does not follow the linear Vegard law with increasing Ga content x, whereas exhibits approximately polynomial change from 174 cm^-1 for CuInSe2 to 185 cm^-1 for CuGaSe2. Such behaviour should be indicative of presence of the asymmetric distribution of Ga and In on a microscopic scale in the films, due to Ga addition. The changes in the tetragonal distortion η lead to a significant variation in the anion displacement parameter U, which should be responsible for the evolution of bond parameters and resultant Raman bands with x. 相似文献
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利用X射线衍射(XRD)技术测量了MOCVD生长的InGaN薄膜中的InN分凝量.利用Vegard定理和XRD 2θ扫描测得实验的InGaN薄膜的In组分为0.1~0.34.通过测量XRD摇摆曲线的InN(0002)和InGaN(0002)的积分强度之比测得InN在InGaN中的含量为0.0684%~2.6396%.根据XRD理论,计算出InN和InGaN的理论衍射强度.InN含量在所有样品中均小于3%,这表明样品的相分离度比较低.还发现InN在InGaN薄膜中的含量与氮气载气流量和反应室气压明显相关. 相似文献
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Polycrystalline InxGa1−xN thin films were prepared by mixed source modified activated reactive evaporation (MARE) technique. The films were deposited at room temperature on glass substrates without any buffer layer. All the films crystallize in the hexagonal wurtzite structure. The indium concentration calculated from XRD peak shift using Vegard's law was found to be varying from 2% to 92%. The band gap varies from 1.72 eV to 3.2 eV for different indium compositions. The indium rich films have higher refractive indices as compared to the gallium rich films. The near infra-red absorption decreases with gallium incorporation into InN lattice which is mainly due to decrease in the free carrier concentration in the alloy system. This fact is further supported from Hall effect measurements. MARE turns out to be a promising technique to grow InxGa1−xN films over the entire composition range at room temperature. 相似文献
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基于密度泛函理论的第一性原理和特殊准随机近似方法,建立64原子的超胞并且对结构进行几何优化.计算和讨论具有闪锌矿结构的三元合金BxGa1-xAs的结构参数、电子结构和光学性质.结果表明:BxGa1-xAs的晶格常数与使用Vegard定理计算得到的值有微弱的偏离,键长存在明显的弛豫;计算得到的合金带隙弯曲参数变化较小(2.57 eV-5.01 eV)而且对组分变化的依赖很弱;最后分析硼的并入对GaAs光学参数包括介电函数、反射率、折射率、吸收系数和能量耗散函数的影响. 相似文献
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S. Labidi M. Labidi H. Meradji S. Ghemid F. El Haj Hassan 《Physica B: Condensed Matter》2009,404(21):4100-4105
The structural, electronic and thermodynamic properties of the SrS1–xOx ternary mixed crystals have been studied using the ab initio full potential linearized augmented plane wave (FP-LAPW) method within density functional theory. The effect of composition on lattice parameter, bulk modulus and band gap was investigated. The lattice constants from Vegard's law and the bulk modulus from linear concentration dependence were observed for the alloys. The microscopic origins of the gap bowing were explained by using the approach of Zunger and co-workers. The thermodynamic stability of these alloys was investigated by calculating the excess enthalpy of mixing ΔHm as well as the phase diagram. In addition to FP-LAPW method, the composition dependence of the refractive index and the dielectric constant was studied by different models. 相似文献
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本文计算了Heusler合金Li2AlGa和Li2AlIn的晶格参数、体积模量、体积模量的一阶导数、 电子能带结构、声子色散曲线和声子态密度,并与密度泛函理论中的广义梯度近似计算结果进行比较. 计算的晶格参数与文献有很好的一致性. 两个Heusler合金的电子能带结构表明它们是半金属结构. 并利用声子色散曲线和声子密度图研究Heusler合金晶格动力学. Li2AlGa和Li2AlIn Heusler合金在基态呈现动力学稳定. 相似文献