Photoionization and detection of ultracold Cs<Subscript><Emphasis Type="Bold">2</Emphasis></Subscript> molecules through diffuse bands

We present the results of absorption measurements in a cesium vapor around 630 K, together with photoionization spectra through a resonance-enhanced two-photon absorption of ultracold cesium dimers created after photoassociation of ultracold cesium atoms. The maximum efficiency of the ultracold molecule ionization is found for wavelengths where absorption at thermal energies is the strongest, in agreement with our theoretical simulations of both processes, involving the so-called Cs₂ diffuse bands. This result will be helpful for further optimization of such a direct way of detection of ultracold molecules. Received 13 September 2001     

Comparative analysis of cesium and potassium uptake in onion <Emphasis Type="Italic">Allium cepa</Emphasis> L.

Cesium uptake in onion (from 0.3 mM CsCl solution traced with ¹³⁷CsCl) has been examined. The highest uptake occurred at pH 4–5 and it decreased with increasing pH. The intensity of Cs translocation depended on acidity of the solution. For acidic solutions, translocation of cesium into bulbs and leaves was greater than in case of alkaline solutions, where most of the cesium remained in the roots. Addition of potassium into the solutions (millimolar K concentrations) inhibits Cs uptake. The potassium pH-influx/efflux characteristic does not coincide with the Cs uptake.     

Electronic surface structure of <Emphasis Type="Italic">n</Emphasis>-ML Ag/Cu(111) and Cs/<Emphasis Type="Italic">n</Emphasis>-ML Ag/Cu(111) as investigated by 2PPE and STS

We investigated the electronic structure of epitaxially grown silver films on Cu(111) with and without adsorption of cesium by means of scanning tunneling spectroscopy and two-photon photoemission. This system has been chosen as a model system to engineer and measure the dynamics of charge-transfer processes between an adsorbate and a heterogeneous substrate. Special emphasis has been laid on the investigation of the energy shift of the Shockley-type surface state and an excited cesium resonance as a function of Ag film thickness. For the cesium resonance we observe an increase in line width with increasing layer thickness. PACS 68.37.Ef; 68.43.-h; 68.55.Jk; 73.20.-r     

Anomalous dependence of the magnetic resonance signal of cesium atoms in the afterglow in an N<Subscript>2</Subscript>-Ar mixture

The investigation of spin-exchange collisions between optically oriented cesium atoms in the ground ² S _1/2 state and nitrogen atoms in the ground ⁴ S _3/2 state reveals an anomalous behavior of the magnetic resonance signal of cesium atoms in the afterglow in an N₂-Ar mixture, namely, the magnetic resonance signal is slowly enhanced during the time interval between the high-frequency pulses exciting a discharge in the absorption cell. It is found that such a behavior of the magnetic resonance signal is explained by a slow change in the concentration of nitrogen atoms in the absorption cell, which affects the magnetic resonance of cesium atoms via efficient spin exchange.     

Frequency shift of the magnetic resonance in 5<Emphasis Type="Italic">s</Emphasis><Superscript>2</Superscript><Emphasis Type="Italic">S</Emphasis><Subscript>1/2</Subscript> rubidium atoms due to spin-exchange collisions with optically oriented cesium atoms

For the case of cesium atoms optically oriented in a mixture of cesium and rubidium vapors, the temperature dependence of the frequency shift of a magnetic resonance excited in a set of Zeeman sublevels for two hyperfine states of ⁸⁷Rb 5s ² S _1/2 atoms. It is shown that, in a weak magnetic field of about 2 × 10^?6 T, this shift is determined by the spin-exchange interaction of rubidium atoms with optically oriented ¹³³Cs atoms.     

Variation du travail de sortie du W (100) par adsorption d'oxyge`ne,de ce´sium et co-adsorption d'oxyge`ne et de ce´sium

The work-function determination by the Kelvin method is used to study the adsorption of oxygen, cesium and co-adsorption of oxygen and cesium on a (100) tungsten surface, at room temperature. The work-function change of the clean surface with the oxygen exposure is used to estimate the sticking coefficient and the dipole moment of adsorbed oxygen. During cesium deposition on the clean surface, a minimum at 1.58 eV and a plateau at 1.80 eV are obtained. Starting from the minimum obtained with cesium, oxygen adsorption leads to a decrease of the work function down to 1.17 eV, when cesium adsorption on a previously oxygenated surface gives a 1.12 eV minimum and an increase of the plateau up to 2.20 eV. This last variation is shown to be consistent with the observed increase of the dipole moment of cesium adsorbed on a partially oxygenated surface, which accounts also for the lowering of the work function minimum.     

Parity nonconservation in atoms; past work and trapped atom future

Parity nonconservation has now been measured in atomic cesium with a fractional uncertainty of 2%. This was done by observing the 6S–7S laser excited transition rate in a handed apparatus. When combined with recent precise calculations of the cesium atomic structure, this provides an important test of the Standard Model. Efforts are under way to achieve a more sensitive test by measuring parity nonconservation in a series of radioactive cesium isotopes which have been trapped using laser light.     

Steady State and Time Resolved Fluorescence Quenching and Chemical Modification Studies of a Lectin from Endophytic Fungus <Emphasis Type="Italic">Fusarium solani</Emphasis>

The solute quenching studies of a lectin from endophytic fungus Fusarium solani were carried out using different quenchers such as acrylamide, succinimide, potassium iodide and cesium chloride. The lectin showed emission maximum at 348 nm indicating relative exposure of tryptophan. The quenchable fraction of the fluorophore was 100% with acrylamide, whereas it was only 50% with succinimide. The ionic quenchers iodide and cesium showed opposite effects at different pH. In the case of cesium, raising the pH resulted in increased quenching and accessibility of typtophan residue, while the iodide showed just opposite effect. These studies showed that the single tryptophan residue of the lectin (per monomer) is relatively exposed, and might be in the vicinity of positively charged amino acid residues. Various amino acids of the F. solani lectin were modified using different reagents to obtain information about the hemagglutinating site. The chemical modification studies suggested tyrosine residues can be modified using N-acetylimidazole, which results in complete loss of hemagglutination activity of the lectin. Kinetics of chemical modification suggested involvement of only 2 tyrosine residues. Modification of arginine, cysteine, histidine, lysine, aspartate, glutamate and tryptophan did not result in loss of hemagglutinating activity of the lectin.     

Étude théorique par la méthode des orbitales moléculaires de l'adsorption du césium sur la face (110) de l'arséniure de gallium

The adsorption of one cesium atom on a (110) gallium arsenide surface is investigated by means of a molecular-orbital method. Several surface deformations are considered. The values obtained for the extraction energy of one electron, the net charge of cesium atom, and the adsorption energy, allow to infer that the cesium atom is placed above the surface in neighbourhood of a gallium atom.     

Transport cross sections for charged particle scattering in (dense-) cesium plasma; electrical conductivity

Transport cross sections for the electron-ion and electron-electron scattering in (dense) cesium plasmas is determined with the partial wave method. The scattering phase shifts δ_l(k) are calculated numerically by means of the usual Numerov method and the advantageous amplitude — phase method for energies E = 10^-4··· 5 ryd and for Debye screening lengths R_D = (10···10³)a₀. Besides the usual Debye potential, also a Thomas-Fermi potential is applied for the cesium electron-ion interaction. The resulting transport cross sections are compared with the Born and quasi-classical approximations. Furthermore, the electrical conductivity of fully ionized cesium plasmas is determined and compared with respective Spitzer results.     

Quasi-reversible solid-phase reaction in the superprotonic conductor Cs<Subscript>5</Subscript>H<Subscript>3</Subscript>(SO<Subscript>4</Subscript>)<Subscript>4</Subscript>·<Emphasis Type="Italic">x</Emphasis>H<Subscript>2</Subscript>O

The thermal effect and heat capacity in a single crystal of nonstoichiometric cesium sulfate hydrate were measured. It was established that superprotonic conduction in this material is caused by an isothermal solid-phase transformation in the bulk of the single crystal. The results of thermal measurements were compared with experimental data on the electrical conductivity.     

The adsorption of caesium—137 on bentonites from the Carpathian basin

The adsorption of cesium was studied on the surface of bentonite rocks from the Carpathian basin. The adsorbed quantity at carrier-free concentration was measured using ¹³⁷Cs, the adsorption capacity of bentonites for cesium ions was determined by X-ray fluorescence analysis. The relation of the cesium adsorption and mineral composition as well as the structural modifications of crystal structure was studied by X-ray diffraction spectrometry and thermoanalysis. The results show that the adsorbed quantity of cesium primarily depends on the montmorillonite content of bentonites.     

Electron-stimulated cesium atom desorption from the Cs/CsAu/Au/W system

This paper reports on a continuation of the investigation of electron-stimulated Cs-atom desorption from a tungsten surface on which cesium and gold films had been adsorbed at T = 300 K. Earlier studies revealed that Cs atoms start to desorb only after more than one monolayer of gold and more than one monolayer of cesium had been deposited on the tungsten surface. In this case, a coating consisting of a gold adlayer on tungsten, a CsAu compound possessing semiconducting properties, and a cesium monolayer capping CsAu (Cs/CsAu/Au/W) is formed on the tungsten surface at 300 K. The yield of atoms from this system exhibits a resonant dependence on the incident electron energy E _e , with an appearance threshold of 57 eV and a maximum at 64 eV. In this case, Cs atoms desorb in two channels, with one of them involving Cs desorption out of the cesium monolayer, and the other, from the CsAu monolayer. The Cs yield at E _e = 64 eV has been investigated in both desorption channels, with an additional cesium coating deposited on the already formed Cs/CsAu/Au/W layered system, as well as of the effect annealing produces on the yield and energy distributions of Cs atoms. It has been demonstrated that Cs atoms evaporated at 300 K on a layered coating with a cesium monolayer atop the CsAu layer on tungsten capped with a gold adlayer, rather than reflected from the cesium monolayer or adsorbing on it, penetrate through the cesium monolayer into the bulk of CsAu even with one CsAu layer present. The desorption yield does not vary with increasing cesium concentration at 300 K, but falls off gradually at 160 K. Annealing within the temperature range 320 K ≤ T _H ≤ 400 K destroys the cesium monolayer and the one-layer CsAu coating, but the multilayer CsAu compound does not break up in this temperature range even after evaporation of the cesium monolayer. It is shown that Cs atoms escape from the multilayer CsAu compound primarily out of the top CsAu layer.     

Measurement and modeling of work function changes during low energy cesium sputtering

In this paper, a H-terminated silicon wafer was bombarded by low energy cesium ions during ToF-SIMS analysis and work function variations of the target were measured for different analysis conditions. This measurement was performed by measuring the shift of the secondary ions energy distributions with a reflectron type analyzer. At first, the silicon’s work function change was found to be −2.3 eV during 500 eV Cs⁺ bombardment at 45°. This effect is due to the creation of a dipolar layer at the surface of the silicon by the implanted cesium. Then the work function variation was measured at 300 eV for varying cesium surface concentrations. The work function was found to decrease monotonously with the increasing cesium surface concentration, as during cesium adsorption experiments. The results were modeled following three different approaches and the value of the effective polarizability α of cesium was found to be equal to 1.9 × 10⁻³⁹ C m²/V. Finally, the effect of the bombardment energy on the work function variation was studied for beams with energies ranging from 250 to 2000 eV. The effective polarizability of cesium was found to increase with increasing Cs beam energy.     

Cesium 6S(1/2) --> 8S(1/2) two-photon-transition-stabilized 822.5 nm diode laser

A cesium 6S(1/2) --> 8S(1/2) two-photon-transition (TPT)-stabilized 822.5 nm diode laser is reported for the first time to our knowledge. Allan deviation of 4.4 x 10(-13) (60 s) was achieved, and the possible systematic errors were evaluated as smaller than 2 kHz. We demonstrate that the cesium TPT-stabilized diode laser could be a reliable frequency reference at 822.5 nm wavelength.     

Room temperature deposition of crystalline indium tin oxide films by cesium-assisted magnetron sputtering

Indium tin oxide (ITO) films were deposited on a Si (1 0 0) substrate at room temperature by cesium-assisted magnetron sputtering. Including plasma characteristics, the structural, electrical, and optical properties of deposited films were investigated as a function of cesium partial vapor pressure controlled by cesium reservoir temperature. We calculated the cesium coverage on the target surface showing maximum formation efficiency of negative ions by means of the theoretical model. Cesium addition promotes the formation efficiency of negative ions, which plays important role in enhancing the crystallinity of ITO films. In particular, the plasma density was linearly increased with cesium concentrations. The resultant decrease in specific resistivity and increase in transmittance (82% in the visible region) at optimum cesium concentration (4.24 × 10⁻⁴ Ω cm at 80 °C of reservoir temperature) may be due to enhanced crystallinity of ITO films. Excess cesium incorporation into ITO films resulted in amorphization of its microstructure leading to degradation of ITO crystallinity. We discuss the cesium effects based on the growth mechanism of ITO films and the plasma density.     

Stage structure in cesium doped pentacene

We have prepared the cesium doped pentacene film and have investigated the electrical properties, in order to investigate a new molecular conductive film based on pentacene. It was found that cesium is doped in the pentacene film and that electrical resistivity decreases drastically below 10 Ω cm. Moreover, in the doping process, we found the step-wise decrease of electrical resistivity. It is deduced from this result that the cesium doped pentacene forms stage structures. In addition, we have carried out the measurements of the X-ray diffraction pattern in the cesium doped pentacene film. It was found from these results that the cesium doped pentacene becomes a highly orientated intercalated conductive film. Furthermore, in the cesium doped pentacene we have observed the shift of (00l) diffraction peak to low diffraction angle. This result indicates that by doping of pentacene the c-axis lattice constant which is the length of the interval between the (001) planes becomes 1.59 nm in the stage-1 structure of the cesium doped pentacene.     

The effect of cesium metal clusters on the optical properties of cesium iodide thin films

Cesium metal clusters strongly affect the optical properties of cesium iodide thin films. The metal clusters are formed during film formation by thermal evaporation. The cesium cluster of 30–40 nm in the matrix of cesium iodide insulating thin films results in Surface Plasmon Resonance (SPR). The peak position of these SPR peaks showed a red shift. This was shown to be due to changes in the dielectric constant of CsI resulting from the strains in the films caused by the metal clusters themselves.     

Codeposition of SiC particles with electrolytic cobalt in the presence of Cs ions

Electrodeposition of SiC particles with cobalt matrix in the presence of cesium ions was studied. The influence of Cs⁺ concentration (0-37.6 mM) on the cathodic polarization curves was determined in galvanostatic and potentiodynamic measurements. It was found that the presence of Cs⁺ in the solution enhanced adsorption of Co²⁺ ions on SiC, but preferential cesium adsorption occurred simultaneously. The last phenomena resulted in cesium incorporation in the composite coating. Surface charge of SiC powder and amounts of functional groups on SiC surface were determined. The particles incorporation into deposits was only little dependent on cesium concentration in the bath. Structure of the composite coatings was studied by microscopic observations. Microhardness of the deposits was also determined.     

Effect of the cesium and potassium doping of multiwalled carbon nanotubes grown in an electrical arc on their emission characteristics

The effect of cesium and potassium atoms deposited onto multiwalled carbon nanotubes grown in an electrical arc on their emission characteristics was studied. The current–voltage characteristics of the field electron emission of specimens with cesium or potassium doped multiwalled carbon nanotubes of this type were revealed to retain their linear character in the Fowler–Nordheim coordinates within several orders of magnitude of change in the emission current. The deposition of cesium and potassium atoms was shown to lead to a considerable increase in the emission current and a decrease in the work function φ of studied emitters with multiwalled nanotubes. The work function was established to decrease to φ ~ 3.1 eV at an optimal thickness of coating with cesium atoms and to φ ~ 2.9 eV in the case of doping with potassium atoms. Cesium and potassium deposition conditions optimal for the attainment of a maximum emission current were found.