Thermal transport properties in the normal state of CaAlxSi2−x superconductors

Normal state electrical and thermal properties, including electrical resistivity (ρ), Seebeck coefficient (S), and thermal conductivity (κ) of the CaAl_xSi_2−x (x=0.9-1.2) system were investigated. It is found that the electrical resistivity and Seebeck coefficient exhibit a typical metallic character throughout the temperature range investigated, and the metallicity of this series is enhanced with increase in Al/Si ratio. On the other hand, the thermal conductivity shows a weak temperature variation at low temperatures, whereas κ follows a T²-dependence for T>150 K. Analysis of the electronic thermal resistivity based on Klemen’s model reveals that the scattering of electrons from the defects and static imperfections becomes dominant as the temperature approaches T_c. These results are discussed in the light of simultaneous existence of various crystal structures and development of ultra-soft phonon mode recently observed in the CaAlSi system.     

Electrical properties and spin fluctuations studies of Y(Co1−xNix)2 compounds

Synthesis by arc melting, the structural and the electric properties of Y(Co_1−xNi_x)₂ alloys were studied by X-ray diffraction (XRD) and four probe dc electrical measurements. XRD analysis (300 K) shows that all samples crystallize in a cubic MgCu₂-type structure. The lattice parameters linearly decrease with Ni content. Electrical resistivity for the Y(Co_1−xNi_x)₂ intermetallic series was measured in a temperature range of 15-1100 K. The parameters involved in the dependence of resistivity on temperature were determined. Residual, phonon and spin fluctuations resistivity were separated from electrical resistivity using both the Matthiesen formula and the Bloch-Gruneisen formula. The spin fluctuations resistivity of the Y(Co_1−xNi_x)₂ series are compared to the mean square amplitudes of spin fluctuations previously calculated by the Linear Muffin Tin Orbital-Tight Binding Approach method for these series in the literature. The contribution of spin fluctuations to total resistivity ρ_sf is proportional to T² at low temperatures. The proportionality parameter strongly reduces across the Y(Co_1−xNi_x)₂ series.     

Structural and electrical characterization of SxSe100−x thin films

Thin films of samples of the glassy S_xSe_100−x system with 0 ≤ x ≤ 7.28 have been prepared by thermal evaporation technique at room temperature (300 K). X-ray investigations show that the structure of pure selenium (Se) does change seriously by the addition of small amount of sulphur S ≤7.28%. The lattice parameters were determined as a function of sulphur content. Results of differential thermal analysis (DTA) of the glassy compositions of the system S_xSe_100−x were discussed. The characteristic temperatures (T_g, T_c and T_m) were evaluated. Dark electrical resistivities, ρ, of S_xSe_100−x thin films with different thicknesses from 100 to 500 nm, were measured in the temperature range from 300 to 423 K. Two distinct linear parts with different activation energies were observed. The variation of electrical resistivity of examined compositions has been discussed as a function of the film thickness, temperature and the sulphur content. The application of Mott model for the phonon assisted hopping of small polarons gave the same two activation energies obtained from the resistivity temperature calculations.     

Effects of uniaxial pressure and annealing on the resistivity of Ba(Fe1−xCox)2As2

Single crystals of underdoped Ba(Fe_1−xCo_x)₂As₂ were detwinned by applying uniaxial pressure. The anisotropic in-plane resistivity was measured using the Montgomery method without releasing pressure. The resistivity along the a-axis shows metallic behavior down to 5 K, while the resistivity along the b-axis shows an insulator-like behavior in some temperature range. Annealing the sample radically reduces the residual resistivity for x=0, and at the same time the anisotropy becomes much smaller at low temperatures.     

Long period helimagnetism in the cubic B20 FexCo1−xSi and CoxMn1−x Si alloys

We report magnetization, resistivity and small angle neutron scattering experiments on cubic B20 Fe_xCo_1?x SI alloys (0.3 ? x ? 0.9) and Co_xMn_1?xSi allpys (x = 0.02, 0.04 and 0.06). The magnetically ordered Fe_xCo_1?xSi alloys and the Co_xMn_1?xSi alloys with x = 0.02 and 0.04 are found to be helimagnetic with very long period. The low temperature resistivity of the magnetically ordered Fe_xCo_1?xSi alloys exhibits an anomalous positive magnetic contribution. The occurence of the Dzyalosyinsky-Moriya spin-orbit type interaction in these non-centrosymmetric alloys is given as a possible explanation of the helimagnetic order.     

Electrical resistivity and thermal conductivity of UP1−xSx

UP, US, and their solid solutions of several compositions were prepared, and the electrical resistivities of these samples were measured from liquid nitrogen temperature to 1000 K and the thermal diffusivities from 300 to 1000 K. It was shown that the resistivity of UP_1?xS_x at the paramagnetic region arose mainly from the scattering of conduction electrons by disordered spins localized at uranium ion sites. The resistivity of UP_0.4S_0.6 showed another anomaly below the transition temperature. A gentle hump of the thermal diffusivity of UP was observed at about 650 K. This was concluded to be due to the anomalous negative temperature coefficient of electrical resistivity observed above the Néel temperature up to about 550 K. The composition dependence of thermal conductivity of UP_1?xS_x was compared with that of UC_1?xN_x by separating the total conductivity into electronic and phonon contributions.     

Scattering of charge carriers on a high spin-low spin mixture in MnAs1−xPx crystals

The specific resistivity anomaly between the magnetic ordering temperature T_N and the displacive phase transition temperature T_t of MnAs_1?xP_x crystals with 0.03 < x < 0.15 seems to be connected with the existence of a high spin-low spin mixture which has been inferred recently from specific heat data.     

Structural and surface properties of Si1−xGex thin films obtained by reduced pressure CVD

This paper investigates the structure and surface characteristics, and electrical properties of the polycrystalline silicon-germanium (poly-Si_1−xGe_x) alloy thin films, deposited by vertical reduced pressure CVD (RPCVD) in the temperature range between 500 and 750 °C and a total pressure of 5 or 10 Torr. The samples exhibited a very uniform good quality films formation, with smooth surface with rms roughness as low as 7 nm for all temperature range, Ge mole fraction up to 32% (at 600 °C), textures of 〈2 2 0〉 preferred orientation at lower temperatures and strong 〈1 1 1〉 at 750 °C, for both 5 and 10 Torr deposition pressures. The ³¹P⁺ and ¹¹B⁺ doped poly-Si_1−xGe_x films exhibited always lower electrical resistivity values in comparison to similar poly-Si films, regardless of the employed anneal temperature or implantat dose. The results indicated also that poly-Si_1−xGe_x films require much lower temperature and ion implant dose than poly-Si to achieve the same film resistivity. These characteristics indicate a high quality of obtained poly-Si_1−xGe_x films, suitable as a gate electrode material for submicron CMOS devices.     

Effect of Si/Ge ratio on resistivity and thermopower in Gd5SixGe4−x magnetocaloric compounds

The effect of Si/Ge ratio on resistivity and thermopower behavior has been investigated in the magnetocaloric ferromagnetic Gd₅Si_xGe_4−x compounds with x=1.7-2.3. Microstructural studies reveal the presence of Gd₅(Si,Ge)₄-matrix phase (5:4-type) along with traces of secondary phases (5:5 or 5:3-type). The x=1.7 and 2.0 samples display the presence of a first order structural transition from orthorhombic to monoclinic phase followed by a magnetic transition of the monoclinic phase. The alloys with x=2.2 and 2.3 display only magnetic transitions of the orthorhombic phase. A low temperature feature apparent in the AC susceptibility and resistivity data below 100 K reflects an antiferromagnetic transition of secondary phase(s) present in these compounds. The resistivity behavior study correlates with microstructural studies. A large change in thermopower of −8 μV/K was obtained at the magneto-structural transition for the x=2 compound.     

Structure and superconductivity of Mg1−xPbxB2

A series of polycrystalline samples of Mg_1−xPb_xB₂ (0≤x≤0.10) were prepared by a solid state reaction method and their structure, superconducting transition temperature and transport properties were investigated by means of X-ray diffraction (XRD) and resistivity measurements. Mg_1−xPb_xB₂ compounds were shown to adopt an isostructural AlB2-type hexagonal structure in a relatively small range of lead concentration, x≤0.01. The crystalline lattice constants were evaluated and were found to exhibit slight length compression as x increases. The superconducting transition temperature (T_c) steadily decreases with Pb doping. It is suggested that the mechanism of superconductivity reduction by lead doping can be attributed to the chemical pressure effect.     

Electrical transport properties of Fe3−xCrxO4 ferrite films on MgO (0 0 1) grown by molecular beam epitaxy

In this report, we fabricated a series of Fe_3−xCr_xO₄(0≦x≦2) films by plasma-oxygen-assisted molecular beam epitaxy (MBE) and did structural and electrical characterizations of these films. These films show textured single phase quality and the lattice parameters are consistent with those of the bulk at low Cr composition (x<0.9). However, the lattice parameters show severe deviation from the bulk value in the intermediate region of 0.9≦x≦1.5 and no diffraction can be resolved at x∼2. These discrepancies may be attributed to the cation distributions and the instability of spinal structure as Cr concentration becomes dominant. The resistivity presents a typical Arrhenius temperature dependence with ρ=ρ₀ exp (E_p/k_BT) indicating that the transport is due to a hopping mechanism. The prefactor ρ₀ increases in Fe_3−xCr_xO₄, at smaller x but tends to level out for x>1, suggesting that Cr³⁺ ions may start to replace Fe³⁺ ions at the A site in the high x region. The activation energy of electrical hopping gradually increases at low Cr concentration but abruptly rises to ∼110 meV at x>0.9, suggesting a crossover from electron-hopping mediated transport to a thermally activated band gap excitation.     

Low temperature resistivities of FexNi80-xP14B6 metallic glasses

The resistivities of six Fe_xNi_80-xP₁₄B₆ alloys have been measured between 1.5 and 50 K. It is found that the resistivity variations both below and above the resistivity minima depend on the transition metal composition. The room temperature coefficients of the resistivity indicate the existence of the magnetic contribution to the resistivity.     

Magnetic and related properties of the solid solution CeCuxGa4−x

Physical properties of polycrystalline samples of CeCu_xGa_4−x (x = 0.2–1.4), crystallizing in the tetragonal BaAl₄-type structure (space group I 4/mmm), were studied by means of X-ray powder diffraction, magnetization, specific heat, electrical resistivity and magnetoresistivity measurements in wide temperature and magnetic fields ranges. The unit-cell volume of the system was found to decrease with increasing x (in total by about 4%) but the magnetic moments of Ce³⁺ ions remain localized in the whole x-range studied. The alloys exhibit ferromagnetic order at low temperatures, which manifests itself as distinct and relatively sharp anomalies in all the temperature characteristics measured. The ordering temperature decreases with increasing the Cu content from 5.5(1) K for x = 0.2 down to 1.35(5) K for x = 1.4, and the electrical transport properties of the system show some features characteristic of Kondo lattices.     

Resistivity and susceptibility near the QCP in disordered UCu5−xNix

The question of whether the temperature dependences of the magnetic susceptibility and the electrical resistivity of UCu_5−xNi_x near, and away from, the QCP where T_N is suppressed to T = 0 are due to intrinsic fluctuations or are dominated by disorder effects is addressed. The interesting ρ ∝ log T behavior below 2 K present for 0.75 ? x ? 1.1 is analyzed and discussed.     

Non-Fermi-liquid behavior in UCu4+xAl8−x compounds

We report on experimental studies of the Kondo physics and the development of non-Fermi-liquid scaling in UCu_4+xAl_8−x family. We studied 7 different compounds with compositions between x=0 and 2. We measured electrical transport (down to 65 mK) and thermoelectric power (down to 1.8 K) as a function of temperature, hydrostatic pressure, and/or magnetic field.Compounds with Cu content below x=1.25 exhibit long-range antiferromagnetic order at low temperatures. Magnetic order is suppressed with increasing Cu content and our data indicate a possible quantum critical point at x_cr≈1.15. For compounds with higher Cu content, non-Fermi-liquid behavior is observed. Non-Fermi-liquid scaling is inferred from electrical resistivity results for the x=1.25 and 1.5 compounds. For compounds with even higher Cu content, a sharp kink occurs in the resistivity data at low temperatures, and this may be indicative of another quantum critical point that occurs at higher Cu compositions.For the magnetically ordered compounds, hydrostatic pressure is found to increase the Néel temperature, which can be understood in terms of the Kondo physics. For the non-magnetic compounds, application of a magnetic field promotes a tendency toward Fermi-liquid behavior. Thermoelectric power was analyzed using a two-band Lorentzian model, and the results indicate one fairly narrow band (10 meV and below) and a second broad band (around hundred meV). The results imply that there are two relevant energy scales that need to be considered for the physics in this family of compounds.     

Optoelectronic properties of Cu1−xPtxFeO2 (0 ≤ x ≤ 0.05) delafossite for p-type transparent conducting oxide

The samples of Cu_1−xPt_xFeO₂ (0 ≤ x ≤ 0.05) delafossite have been synthesized by solid-state reaction method to investigate their optical and electrical properties. The properties of electrical resistivity and Seebeck coefficient were measured in the high temperature ranging from 300 to 960 K, and the Hall effect and the optical properties were measured at room temperature. The obtained results of Seebeck showed the samples are p-type conductor. The optical properties at room temperature exhibited the samples are transparent visible light material with optical direct gap 3.45 eV. The low electrical resistivity, hole mobility and carrier density at room temperature displayed value ranging from 0.29 to 0.08 Ω cm, 1.8 to 8.6 cm²/V s and 1.56 × 10¹⁸ to 4.04 × 10¹⁹ cm⁻³, respectively. The temperature range for transparent visible light is below 820 K because the direct energy gap contains value above 3.1 eV. Consequently, the Cu_1−xPt_xFeO₂ delafossite enhance performance for materials of p-type transparent conducting oxide (TCO) with low electrical resistivity.     

Magnetic and charge ordering properties of Bi0.6−xEuxCa0.4MnO3 (0.0≤x≤0.6)

We have studied structure, magnetic and transport properties of polycrystalline Bi_0.6−xEu_xCa_0.4MnO₃ (x=0.0, 0.1, 0.2, 0.3, 0.4, 0.5 and 0.6) perovskite manganites. Magnetic measurements show that the charge-ordering temperature (T_CO) decreases with increasing x up to x=0.4 and then slightly increases with further increasing x up to x=0.6. Further, the antiferromagnetic (AFM) ordering temperature (T_N) decreases with increasing x. At T<T_N a transition to metamagnetic glass like state is also seen. Eu doping also leads to enhancement in the magnetic moment and a concomitant decrease in resistivity up to x=0.2 and then an increase in resistivity up to x=0.5. We propose that the local lattice distortion induced by the size mismatch between the A-site cations and 6s² character of Bi³⁺ lone pair electron are responsible for the observed variation in physical properties.     

Electrical conductivity and low field magnetoresistance in polycrystalline La1−xKxMnO3 pellets prepared by pyrophoric method

Electrical conductivity and magnetoresistance of a series of monovalent (K) doped La_1−xK_xMnO₃ polycrystalline pellets prepared by pyrophoric method have been reported. K doping increases the conductivity as well as the Curie temperature (T_C) of the system. Curie temperature increases from 260 to 309 K with increasing K content. Above the metal-insulator transition temperature (T>T_MI), the electrical resistivity is dominated by adiabatic polaronic model, while in the ferromagnetic region (50<T<T_MI), the resistivity is governed by several electron scattering processes. Based on a scenario that the doped manganites consist of phase separated ferromagnetic metallic and paramagnetic insulating regions, all the features of the temperature variation of the resistivity between ∼50 and 300 K are described very well by a single expression. All the K doped samples clearly display the existence of strongly field dependent resistivity minimum close to ∼30 K. Charge carrier tunneling between antiferromagnetically coupled grains explains fairly well the resistivity minimum in monovalent (K) doped lanthanum manganites. Field dependence of magnetoresistance at various temperatures below T_C is accounted fairly well by a phenomenological model based on spin polarized tunneling at the grain boundaries. The contributions from the intrinsic part arising from DE mechanism, as well as, the part originating from intergrannular spin polarized tunneling are also estimated.     

Quadratic temperature dependence of electron-phonon scattering in disordered V1−xPdx alloys

We report the results of a comprehensive study of weak localization and electron-electron interaction effects in disordered V_1−xPd_x alloys whose compositions are close to the (low T_c) A15 V₃Pd compound. Magnetoresistivity and zero field resistivity have been measured within the temperature range 1.5≤T≤300 K. The low-temperature resistivity obeys a law, which is explained by electron-electron interaction. We have determined the electron-phonon scattering time (τ_e-ph) for V_1−xPd_x alloys. Our results indicate an anomalous electron-phonon scattering rate obeying quadratic temperature dependence. This observation is interpreted by the existing theories of electron-phonon interactions.     

Structure, magnetic, and transport properties of the Co-doped manganites La0.9Te0.1Mn1−xCoxO3 (0≤x≤0.25)

The effect of Co doping at Mn-site on the structural, magnetic and electrical transport properties in electron-doped manganties La_0.9Te_0.1Mn_1−xCoxO₃ (0≤x≤0.25) has been investigated. The room temperature structural transition from rhombohedra to orthorhombic (Pbnm) symmetry is found in these samples with x≥0.20 by the Rietveld refinement of X-ray powder diffraction patterns. All samples undergo the paramagnetic-ferromagnetic (PM-FM) phase transition. The Curie temperature T_C of these samples decreases and the transition becomes broader with increasing Co-doping level. The magnetization magnitude of Co-doping samples increases at low temperatures with increasing Co-doping level for x≤0.15 and decreases with increasing Co-doping content further. The metal-insulator (M-I) transitions observed in the sample with x=0 are completely suppressed with Co doping, and the resistivity displays semiconducting behavior within the measured temperature region for these samples with x>0. All results are discussed according to the changes of the structure parameters and magnetic exchange interaction caused by Co-doping. In addition, the different effects between the Co doping and Cu doping in the Mn site for the electron-doped manganites are also discussed.