Preparation and characterization of iron–molybdate thin films

Mixed Fe–Mo oxides are used in industrial catalytic processes of selective oxidation of methanol to formaldehyde. For better understanding of the structure-reactivity relationships of these catalysts we aim to prepare well-ordered iron–molybdate thin films as model catalysts. Here we have studied Mo deposition onto Fe₃O₄ (111) thin films produced on Pt(111) as a function of Mo coverage and annealing temperature using LEED, AES, STM and IRAS. At low temperatures, the iron oxide film is covered by Mo = O terminated molybdena nanoparticles. Upon oxidation at elevated temperatures (T > 900 K), Mo species migrate into the film and form new bonds with oxygen in the film. The resulting films maintain the crystal structure of Fe₃O₄, and the surface undergoes a (√3 × √3)R30° reconstruction. The structure is rationalized in terms of Fe substitution by Mo in the surface layers.     

In situ growth of sol–gel-derived nano-VO2 film and its phase transition characteristics

Fe₃O₄/C nanocomposites have been prepared by one-pot PEG-assisted co-precipitation method. The structure and morphology of the as-prepared materials were analyzed by X-ray diffraction and transmission electron microscopy. The results showed that Fe₃O₄/C nanocomposites were well crystallized. Carbon nanoparticles dispersed among Fe₃O₄ particles forming a carbon layer, which prevent Fe₃O₄ particles from contacting each other. Electrochemical performance tests showed that Fe₃O₄/C nanocomposites keep at a high discharge capacity of 902.4 mAh g^?1 at 1 C after 110 cycles. Furthermore, the samples showed much improved rate capability and better cycle stability compared with pure Fe₃O₄. The excellent electrochemical performance of Fe₃O₄/C nanocomposites can be attributed to unique nanostructure and existence of amorphous carbon in the composites. The existence of the amorphous carbon not only enhanced electric conductivity, but also buffered volume variation of Fe₃O₄/C nanocomposites during charge/discharge process.     

Characteraction of Ag-doped ZnO thin film synthesized by sol–gel method and its using in thin film solar cells

Pure 2% and 4% Ag-doped ZnO thin films have been synthesized on glass substrates by sol–gel method. The structure, morphology and optical properties of the samples have been studied by X-ray diffractometer (XRD), scanning probe microscope, UV–vis spectrophotometer, respectively. The XRD result shows that the pure ZnO has a wurtzite hexagonal structure, no phase segregation is observed. The surface morphology of pure ZnO thin film shows that the grains are growing preferentially along the c-axis orientation perpendicular to the substrates. The transmittance spectra reveal that all samples have high transmittance above 90% in visible region. With Ag doping content increase, a red shift is observed. The performance of Ag-doped ZnO films using in thin film solar cells are simulated. The results show that 4% Ag-doped ZnO thin film can greatly improve the absorption of the cells. Compare to pure ZnO, solar cell's energy conversion efficiency improvement of 2.47% is obtained with 4% Ag doped ZnO thin film.     

Preparation and characterization of CuI/PVA–PEDOT:PSS core–shell for photovoltaic application

In the present paper nano polymer composite of CuI/PVA blended with PEDOT:PSS has been prepared by growing CuI nano particles inside aqueous solution of PVA. The XRD characterization illustrated the growth of CuI nano crystals of 22–33 nm. The optical absorption showed direct transition with an energy band gap equals to 1.18 eV and 1.3 eV for colloidal and thin solid films respectively. The PL investigation illustrates a quenching with increasing PEDDOT:PSS concentration. The results are interpreted according to energy confinement enhanced by plasmon–exciton interaction of CuI–PVA/PEDOT:PSS core–shell. The frequency dependence of conductivity suggested hopping conduction where the bulk conductivity is thermally activated with an activation energy in the range varies from 0.07 to 0.46 eV by increasing PEDOT:PSS concentration. The cyclic voltammetry measurements have been performed to ascertain the position of both HOMO and LUMO levels which illustrated a movement of HOMO level toward vacuum level, with a decrease in the chemical band gap from 1.72 to 1.3 eV with increasing PEDOT:PSS concentration.     

Low-temperature processing of sol–gel-derived lead–zirconate–titanate thin films by oxygen-plasma treatment

Ferroelectric thin films of sol–gel-derived Pb(Zr_x, Ti_1−x)O₃ (lead–zirconate–titanate, PZT) were obtained by the low-temperature processing employing oxygen-plasma treatment. The as-coated PZT films were annealed in oxygen ambience at 450 °C, followed by oxygen-plasma treatment at 200 °C, which gave rise to the ferroelectric hysteresis. Annealing of the as-coated PZT films followed by oxygen-plasma teratment at 200 °C gave rise to the ferroelectric hysteresis.     

Synthesis and characterization of nanoporous silica film via non-surfactant template sol–gel technique

Nanoporous silicon dioxide has received growing interests owing to their peculiar application potentials in conservation and storage energy. Therefore, the development of novel and simple techniques is required for raising these nanoporous materials to industrial level. In this research, we report novel strategy for the synthesis of nanoporous SiO₂ via non-surfactant template sol–gel technique for the first time. The morphology and structure of the as prepared and annealed nanoporous silica films were studied using X-ray diffraction, scanning electron microscope, Fourier transform infrared spectroscopy and nitrogen absorption/desorption technique. The results showed that highly order nanoporous silica film has been obtained at annealing temperature 600 °C with average diameter 5.1 nm and average pore volume 3.6 cm³ g⁻¹.     

TEM characterization of organic nanocrystals grown in sol–gel thin films

The tetracene molecule (2,3-benzanthracene, C₈H₁₂) was used to synthesize nanocrystals grown in sol–gel thin films, ranging from 10 to 100 nm of diameter. This confined nucleation and growth was compared to microcrystallizations of the same molecule in free solution. Transmission electron microscopy (TEM) was used to characterize these two kinds of tetracene crystals. The observation was performed under low-dose illumination to avoid amorphization of the samples during electron irradiation. Spatial confinement and size distribution of micro- and nanocrystals were compared. Using electron microdiffraction and diffraction patterns simulations, we showed that free microcrystals and nanocrystals confined in gel glasses exhibit the same triclinic structure. In addition, time-resolved spectroscopy was used to record fluorescence decays, showing a monoexponential fluorescence decay for nanocrystals while microcrystals exhibit a multiexponential decay. The simple signature of nanocrystals luminescence is promising for the future development of chemical or biological sensors.     

Synthesis and characterization of nanostructured strontium hexaferrite thin films by the sol–gel method

Nanostructured single phase strontium hexaferrite, SrFe₁₂O₁₉, thin films have been synthesized on the (100) silicon substrate using a spin coating sol–gel process. The thin films with various Fe/Sr molar ratios of 8–12 were calcined at different temperatures from 500 to 900 °C. The composition, microstructure and magnetic properties of the SrFe₁₂O₁₉ thin films were characterized using Fourier transform infrared spectroscopy, differential thermal analysis, thermogravimetry, X-ray diffraction, electron microscopy and vibrating sample magnetometer. The results showed that the optimum molar ratio for Fe/Sr was 10 at which the lowest calcination temperature to obtain the single phase strontium hexaferrite thin film was 800 °C. The magnetic measurements revealed that the sample with Fe/Sr molar ratio of 10, exhibited higher saturation magnetization (267.5 emu/cm³) and coercivity (4290 Oe) in comparison with those synthesized under other Fe/Sr molar ratios.     

Preparation and characterization of low density polystyrene/TiO2 core–shell particles for electronic paper application

In order to reduce the density mismatch between TiO₂ and the low dielectric medium and improve the dispersion stability of the electrophoretic particles in the low dielectric medium for electrophoretic display application, polystyrene/titanium dioxide (PS/TiO₂) core–shell particles were prepared via in-situ sol–gel method by depositing TiO₂ on the PS particle which was positively charged with 2-(methacryloyloxy)ehyl trimethylammonium chloride (DMC). The morphology and average particle size of PS/TiO₂ core–shell particles were observed by transmission electron microscopy (TEM), scanning electron microscope (SEM) and particle size analyzer. It was found that density of PS/TiO₂ core–shell particles were reduced obviously and the particles can suspend in the low dielectric medium of low density. The PS/TiO₂ core–shell particles can endure ultrasonic treatment because of the interaction between TiO₂ and PS. Zeta potential and electrophoretic mobility of the fabricated core–shell particles in a low dielectric medium with charge control agent was measured to be −44.3 mV and −6.07 × 10⁻⁶ cm²/Vs, respectively, which presents potential in electronic paper application.     

Photopatternable and refractive-index-tunable sol–gel-derived silica–titania nanohybrid materials

Silica–titania nanohybrid materials were synthesized using functionalized organosilanes and organically chelated titanium alkoxide in a simple sol–gel process. The synthesized silica–titania nanohybrid materials exhibited good solution processability and homogeneous dispersion without any phase separation regardless of the ratio of the mixture of the two components. The silica–titania nanohybrid materials exhibited good photoinitiator solubility and effective photocurability with a high degree of degree under ultraviolet (UV) exposure. Because of their high photocurability and solution processability, the silica–titania nanohybrid materials were readily converted into silica–titania nanohybrid films and were used for direct photopatterning without requiring the developing process used in the photomask method. In particular, the refractive indices of the silica–titania nanohybrid materials could be decreased by decreasing the content of chelated titanium alkoxide in the materials. Moreover, the silica–titania nanohybrid films exhibited high transmittance in the visible wavelength range, and their surface roughnesses were very smooth, exhibiting values <1 nm. On the basis of these observations, the fabricated silica–titania nanohybrid materials can be used in solution-processable materials for producing optical and electro-optical elements.     

Fabrication and characterization of pure and Sn/Sb-doped ZnO thin films deposited by sol–gel method

Undoped and doped ZnO thin films were prepared by sol–gel method and deposited on tin-doped indium oxides (ITO) substrate using spin coating technique. The effects of Sn and Sb dopants on structural and optical properties were investigated. The starting material was zinc acetate dihydrate, 2-methoxyethanol was used as solvent and monoethanolamine (MEA) as stabilizer. ZnO films were doped with 2% and 7% Sn and Sb concentrations. Optical measurements show an important effect of Sn and Sb dopants on optical band gap.     

Preparation and characterization of polymer-supported nano-amorphous Ni–B particles

Polymer-supported nano-amorphous Ni–B particles have been prepared by an ion exchange/chemical reduction protocol. The products were characterized by inductively coupled plasma spectroscopy (ICP), X-ray powder diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The polymer-supported Ni–B particles prepared at low temperature are 60–70 nm in size with a Ni–B ratio of Ni₁₉B₁₀.The choice of temperature is a crucial factor affecting particle size.     

Investigation of current–voltage and capacitance–voltage characteristics of Ag/perylene-monoimide/n-GaAs Schottky diode

Ag/perylene-monoimide(PMI)/n-GaAs Schottky diode was fabricated and the current–voltage (I–V) characteristics at a wide temperature range between 75 and 350 K and also the capacitance–voltage (C–V) characteristics at room temperature for 1 MHz have been analyzed in detail. The measured I–V characteristics exhibit a good rectification behavior at all temperature values. By using standard analysis methods, the ideality factor and the barrier height are deduced from the experimental data and also the variations of these parameters with the temperature are analyzed. In addition, by means of the Cheung and Cheung method, the series resistance and some other electrical properties are calculated for the diode. Finally, capacitance–voltage characteristics of device have been analyzed at the room temperature. From analyzing the capacitance measurements, Schottky barrier height is determined and then compared with the value which calculated from the I–V measurements at room temperature. Also, the concentration of ionized donors, built-in potential and some other parameters of diode are found using C–V characteristics.     

Effects of Cu doping on nickel oxide thin film prepared by sol–gel solution process

We prepared nickel oxide (NiO) thin films with p-type Cu dopants (5 at%) using a sol–gel solution process and investigated their structural, optical, and electrical characteristics by X-ray diffraction (XRD), atomic force microscopy (AFM), optical transmittance and current–voltage (I–V) characteristics. The crystallinity of the NiO films improved with the addition of Cu dopants, and the grain size increased from 38 nm (non-doped) to 50 nm (Cu-doped). The transmission of the Cu-doped NiO film decreased slightly in the visible wavelength region, and the absorption edge of the film red-shifted with the addition of the Cu dopant. Therefore, the width of the optical band gap of the Cu-doped NiO film decreased as compared to that of the non-doped NiO film. The resistivity of the Cu-doped NiO film was 23 Ω m, which was significantly less than that of the non-doped NiO film (320 Ω m). Thus, the case of Cu dopants on NiO films could be a plausible method for controlling the properties of the films.     

Synthesis and characterization of highly textured Pt–Bi thin films

Pt–Bi films were synthesized on glass and thermally oxidized silicon substrates by e-beam evaporation and annealing. The structures were characterized using X-ray diffraction (XRD) and transmission electron microscopy/selected area electron diffraction (TEM/SAED) techniques. Single-phase PtBi was obtained at an annealing temperature of 300°C, whereas a higher annealing temperature of 400°C was required to obtain the highly textured γ-PtBi₂ phase. TEM/SAED analysis showed that the films annealed at 400°C contain a dominant γ-PtBi₂ phase with a small amount of β-PtBi₂ and α-PtBi₂ phases. Both the PtBi and γ-PtBi₂ phases are highly textured in these two kinds of film: the c-axis of the hexagonal PtBi phase is mostly in the film plane, whereas the c-axis of the trigonal γ-PtBi₂ phase is perpendicular to the film plane. The electrical resistivity of the film with the γ-PtBi₂ phase was smaller by one order of magnitude than that of the film with the PtBi phase.     

Preparation and characterization of PVAc–PMMA-based solid polymer blend electrolytes

In the present work, a novel blend polymer electrolyte membrane using poly(vinyl acetate) (PVAc), poly(methyl methacrylate) (PMMA), and lithium per chlorate (LiClO₄) in different compositions has been prepared by the solution-casting technique. Their chemical, structural characters, thermal behavior, surface morphology, and ionic conductivity were studied using Fourier transform infrared spectroscopy, X-ray diffraction, thermogravimetric/differential thermal analyzer, scanning electron microscopy, and AC impedance analyzer, respectively. A maximum ionic conductivity value of 1.67 × 10⁻⁴ S/cm at 303 K is obtained for PVAc–PMMA–LiClO₄ complexes in the ratio of 25 × 75, keeping LiClO₄ constant as 10 wt.% among all the compositions studied.     

Structures and local ferroelectric polarization switching properties of orthorhombic YFeO_3 thin film prepared by a sol–gel method

Orthorhombic YFeO_3 thin film was prepared on La_(0.67)Sr_(0.33)MnO_3/LaAlO_3 substrate by a sol-gel spin-coating method. The structures of the YFeO_3/La_(0.67)Sr_(0.33)MnO_3/LaAlO_3(YFO/LSMO/LAO) sample were detected by x-ray diffraction pattern, Raman spectrometer, scanning electron microscopy, and atomic force microscope. The local ferroelectric polarization switching properties of the orthorhombic YFO film were confirmed by piezoresponse force microscopy(PFM) for the first time. The results show that the YFO film deposited on LSMO/LAO possesses orthorhombic structure,with ultra-fine crystal grains and flat surface. The leakage current of the YFO film is 8.39 × 10~(-4) A·cm~(-2) at 2 V,with its leakage mechanism found to be an ohmic behavior. PFM measurements indicate that the YFO film reveals weak ferroelectricity at room temperature and the local switching behavior of ferroelectric domains has been identified. By local poling experiment, polarization reversal in the orthorhombic YFO film at room temperature was further observed.     

Spectral features of Co–Ge–Te amorphous thin film

Optical spectral features of Co_xGe_yTe_100?x?y amorphous thin films where 10≤x≤35 and 41≤y≤47 were studied for the first time. The transmittance and reflectance at normal incidence have been measured at room temperature in the spectral range 190–2500 nm. Refractive index and extinction coefficient have been evaluated in the above spectral range. Band tail width and energy gap were strongly affected by cobalt concentration in the “as prepared” amorphous thin film. Absorption band spectrum on the basis of the imaginary parts of the dielectric constant, ε₂, ε_1, refractive index, and extinction coefficient are also affected by cobalt content. On the other hand, the band edge parameter β remains almost constant.     

Fabrication and characterization of nanocrystalline Al,Co:ZnO thin films by a sol–gel dip coating

The consequence of annealing on the micro-structural and electrochemical characteristics of Al doped CoZnO thin films deposited by sol–gel dip coating technique are studied. X-ray diffraction indicates that films have a hexagonal wurtzite structure oriented towards the (100). Optical properties of films are recorded by transmission curves utilising a UV–VIS spectrophotometer. The investigation of the optical transmission spectra indicates that the band gap of the films decrease from 3.99 eV to minimum 3.83 eV upon annealing. All films show room temperature ferromagnetism whose magnetization increases with annealing. Dip coated films possess polycrystalline nanosized grains with porous morphology.     

Substrate-induced stress and transformation characteristics of a deposited Ti–Ni–Cu thin film

This article presents the investigation results on the transformation characteristics of a sputter-deposited Ti–Ni–Cu shape memory alloy thin film and its relation to the substrate-induced stress. Experimental results show that, with the substrate attachment, the transformation interval increases while the transformation hysteresis decreases in comparison with those of the same thin film in the free-standing condition. By assuming a stress distribution through the film thickness, a layer-by-layer transformation sequence in the substrate-attached film is proposed and the transformation interval and hysteresis are analysed. The analysis results show qualitative agreement with the experimental observations, suggesting that the approach taken is plausible. This approach may also be used to examine the transformation characteristics of other thin films having thermally induced phase transformations.