ZnO nanowalls

Wurtzite ZnO nanowall structures have been synthesized on a (110) Al₂O₃ substrate by a thermal evaporation and condensation method. The nanowalls are connected to each other and have a thickness of about 20–100 nm. An excellent epitaxial relationship with the substrate has been observed by X-ray diffraction. Edge-dislocation dipoles were observed by transmission electron microscopy. Photoluminescence measurements show strong UV emission at 390 nm for the white-gray nanowalls grown at high temperature, and very weak UV emission for the reddish nanowalls grown at low temperature. PACS 78.55.-m; 81.05.Je; 81.10.Bk; 81.15.Ef     

ZnO/Ag/ZnO多层结构薄膜的光电性质

通过磁控溅射方法生长了不同银层厚度的ZnO/Ag/ZnO多层结构的薄膜,并对其形貌、光吸收谱、光致发光和光响应特性进行了比较研究.结果表明ZnO薄膜中银薄层的加入使得光致发光的强度增强.银层厚度为6 nm样品制成的器件在350 nm处的光响应度为0.06 A/W,相对于ZnO薄膜提高了一个数量级.而当银层厚度达到15 ...     

ZnO nanoparticles favours heterogeneous nucleation in PET–ZnO nanocomposites

The structural and chemical properties with non-isothermal crystallization kinetics of PET–ZnO nanocomposites have been reported in this article. ZnO nanoparticles have been synthesized via chemical route with average diameter 19 nm which made confirm by transmission electron microscopy and X-ray diffractometer (XRD) techniques. PET–ZnO nanocomposites have been prepared by solution casting method. The structural and chemical changes occurred in poly (ethylene terephthalate) after inclusion of ZnO nanoparticles have been studied with the help of XRD and Fourier transform infrared spectroscopy, respectively. It was observed from differential scanning calorimeter that ZnO nanoparticles work as nucleating agent for heterogeneous nucleation in PET matrix under non-isothermal crystallization process. The combined Avrami and Ozawa models have been proved adequate to explain non-isothermal crystallization kinetics of PET–ZnO nanocomposites, and also, ZnO nanoparticles have been caused to reduce crystallization activation energy in pristine PET as per the applied Kissinger model.     

Disc-Capped ZnO Nanocombs

Nanocombs with a disc cap structure of ZnO have been synthesized on Si substrates by using pure Zinc powaers as the source materials based on a vapour-phase transport process. The morphology and the microstructure are investigated by a scanning electron microscopy and x-ray diffraction. Based on the transmission electron microscopy and selected area electron diffraction analysis, the growth directions of three representative parts, nanoribbon stem, nanorod branch and nanodisc cap of the nanocomb are revealed. The growth mechanism of the disc-capped nanocombs is discussed based on the self-catalyzed vapour-liquid-solid process.     

Pentagonal ZnO nanorods

We report the growth of ZnO nanorods with pentagonal cross‐section in electrodeposition on p‐type Si substrates. Cathodic potentials smaller than those used for growth of hexagonal nanorods are used. The pentagonal wires have a typical length of 1–2 µm and grow out of an inhomogeneous nano‐crystalline thin film. We tentatively explain the occurrence of the pentagonal morphology in terms of kinetic limitations for electron transport in the p‐Si substrate and changed chemical conditions at the growth surface. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Donor-like defects in ZnO substrate materials and ZnO thin films

We have investigated donor-like defects in ZnO substrate material grown by three different methods, and in epitaxial ZnO thin films grown on sapphire by pulsed laser deposition. Temperature dependent Hall effect measurements yield information about dominant donors. The thermal activation energies lie in a wide range from about 20 meV to about 370 meV. Deep level transient spectroscopy is used to obtain parameters of deep donor-like defects. For that, a high-speed diode contact configuration was laid out for the epitaxial thin films in order to determine the defect parameters with high precision. The identified levels are E1, E3 and E4, though the level E4 is observed only in single crystals grown by seeded chemical vapor transport. PACS 72.10.Fk; 72.80.Ey; 73.50.-h     

Density-controlled growth of ZnO nanorods using ZnO nanocrystals-embedded polymer composite

This work focuses on novel synthesis of ZnO nanorods for their potential applications to optoelectronic and electronic nanodevices. The growth density of ZnO nanorods was modulated through controlling of the density of ZnO nanocrystals dispersed on Si substrate. For this, ZnO nanocrystals synthesized via a polyol process were blended with a polymer matrix. ZnO nanocrystals-embedded polymer composite film was generated by spin-coating the mixed solution. Subsequent heat treatment of composite film removed a polymer matrix and left ZnO nanocrystals on the substrate, serving as seeds for the following ZnO nanorod growth. The density of grown ZnO nanorods was well controllable, depending on the density of dispersed ZnO nanocrystals on the substrate, which was varied by the concentration of ZnO nanocrystal-polymer solution.     

Nanostructured ZnO and ZnO: Pd with MXene overlayer SPR biosensors

Optical and Quantum Electronics - In this article, Bernoulli $$(G'/G)$$ -expansion method, which is proposed in this research work, and $$(G'/G)$$ -expansion method are applied to find...     

Induced growth of high quality ZnO thin filmsby crystallized amorphous ZnO

This paper reports the induced growth of high quality ZnO thin film by crystallized amorphous ZnO. Firstly amorphous ZnO was prepared by solid-state pyrolytic reaction, then by taking crystallized amorphous ZnO as seeds (buffer layer), ZnO thin films have been grown in diethyene glycol solution of zinc acetate at 80℃. X-ray Diffraction curve indicates that the films were preferentially oriented [001] out-of-plane direction of the ZnO. Atomic force microscopy and scanning electron microscopy were used to evaluate the surface morphology of the ZnO thin film. Photoluminescence spectrum exhibits a strong ultraviolet emission while the visible emission is very weak. The results indicate that high quality ZnO thin film was obtained.     

Magnetic states at the oxygen surfaces of ZnO and Co-doped ZnO

First principles calculations of the O surfaces of Co-ZnO show that substitutional Co ions develop large magnetic moments which long-range order depends on their mutual distance. The local spin polarization induced at the O atoms is 3 times larger at the surface than in the bulk, and the surface stability is considerably reinforced by Co. Moreover, a robust ferromagnetic state is predicted at the O (0001) surface even in the absence of magnetic atoms, correlated with the number of p holes in the valence band of the oxide, and with a highly anisotropic distribution of the magnetic charge even in the absence of spin-orbit coupling.     

ZnO2与其热分解所得的ZnO粉末的拉曼光谱研究

利用ZnO2热分解方法制备的ZnO粉末的拉曼光谱,通过分析不同加热温度下所得样品强激光烧蚀后拉曼峰位的差异并对比其他方法所制样品的光谱,指出333 cm-1拉曼峰应当归结为E2(high)和E2(low)的差频,而661 cm-1峰为其二倍频。此外,在量化计算和红外光谱的辅助下,对文献中关于ZnO2粉末在400～500 cm-1之间所观测到的拉曼峰的指认提出了不同看法。     

退火对ZnO薄膜晶体结构和ZnO/p-Si异质结光电性质的影响

采用脉冲激光沉积方法在p-Si(100)衬底卜牛长ZnO薄膜,分别在500℃、600℃和700℃下真空退火,采用X射线衍射仪研究了退火对ZnO薄膜品体结构的影响,并测量了ZnO的面电阻和ZnO/p-Si异质结的、I-V特性曲线.研究表明,随着退火温度的升高,ZnO的(002)衍射峰强度逐渐增大,半峰全宽不断减小,同时薄膜内应力减小,ZnO晶粒尺寸变大.表明高温退火有助于ZnO薄膜结晶质量的提高.在没有光照的条件下,异质结的漏电流随退火温度的增加而增大;用650 nm光照射样品时,600℃退火的样品表现出最明显的光电效应,而过高的退火温度会破坏ZnO/p-Si异质结的界面结构,使其光电流变小.所以,要得到性能良好的光电器件,应选取适当的退火温度.     

Room temperature ferromagnetism in Cu-doped ZnO synthesized from CuO and ZnO nanoparticles

AC susceptibility and ferromagnetic resonance (FMR) measurements indicate that ZnO doped with Cu by a simple sintering process starting from nanoparticles of ZnO and CuO is ferromagnetic above room temperature. FMR measurements above room temperature indicate the ordering temperature to be above 520 K. The observation supports the recent theoretical calculations of Huang et al. which predict ferromagnetism in copper-doped ZnO.     

Study of ZnO and Ni-doped ZnO synthesized by atom beam sputtering technique

Zinc oxide (ZnO) and Ni-doped zinc oxide (ZnO:Ni) films are prepared by atom beam sputtering with an intent of growing transparent conducting oxide (TCO) material and understanding its physical properties. The crystalline phases of the films are identified by the grazing angle X-ray diffraction (GAXRD) technique. Thicknesses of the films are measured by ellipsometry. Chemical states of the elements present in the films are investigated by X-ray photoelectron spectroscopy (XPS), which indicates the presence of Ni in the ZnO environment in a divalent state. Average transmission across the ZnO:Ni film was determined to be ∼83% in the visible region, which is less than that (∼90%) of undoped ZnO films. The resistivity measured by van der Pauw technique of the ZnO:Ni film (∼9×10^-3 Ω cm) is two orders of magnitude smaller as compared to its undoped counterpart (1 Ω cm). For ZnO:Ni film an average carrier concentration of ∼1.4×10¹⁹ cm^-3 was observed by Hall measurements. Two important mechanisms reported in the literature viz. influence of d–d transition bands and electron scattering from crystallites/grains are discussed as the possible causes for the increase in conductivity on Ni doping in ZnO. PACS 73.50.Bk; 78.66.Li; 79.60.Dp; 61.05.cp     

Donor-acceptor complexes in ZnO

One of the main obstacles to the technical application of the wide-gap semiconductor ZnO represents the difficulty to achieve reliable and sufficient p-type doping. The theoretically proposed concepts of cluster-doping or codoping should lead to an enhanced and stable p-type conductivity of ZnO. We report on PAC results obtained by codoping experiments of ZnO by ion implantation using the donor ¹¹¹In and the group-V acceptors N and P. The formation of In-N and In-P pairs has been observed. Based on these PAC results, there is no evidence for the formation of In-acceptor complexes involving more than one N or P acceptor. Finally, first reports on PAC investigations using ⁷⁷Br as donor in ZnO are presented.     

One-dimensional ZnO nanostructure-based optoelectronics

Semiconductor nanowires, with their unique capability to bridge the nanoscopic and macroscopic worlds, have been demonstrated to have potential applications in energy conversion, electronics, optoelectronics, and biosensing devices. One-dimensional (1D) ZnO nanostructures, with coupled semiconducting and piezoelectric properties, have been extensively investigated and widely used to fabricate nanoscale optoelectronic devices. In this article, we review recent developments in 1D ZnO nanostructure based photodetectors and device performance enhancement by strain engineering piezoelectric polarization and interface modulation. The emphasis is on a fundamental understanding of electrical and optical phenomena, interfacial and contact behaviors, and device characteristics. Finally, the prospects of 1D ZnO nanostructure devices and new challenges are proposed.     

Issues in ZnO homoepitaxy

Zinc oxide (ZnO) bulk single crystals, which are of high purity and transparency with a large size of 2 in., are successfully grown by the hydrothermal method. The sliced substrates are chemomechanically polished to form an epi-ready surface. The impurities existing on the as-polished substrate surface are characterized before and after annealing by SIMS (secondary-ion mass spectroscopy), and a damaged surface layer due to chemomechanical polishing is evaluated by an optical method. We attempt to remove the layer damaged due to chemomechanical polishing with two approaches, chemical etching and thermal annealing in N₂, O₂ or high vacuum. The improvement of the surface morphology and crystallinity is evaluated by means of high resolution X-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM). In the PL measurements, the relative intensity of the first-order longitudinal optical phonon replica of the free exciton (FX-1LO) is compared against varying etching depth. The relative intensity becomes weak with increasing etch depth and finally saturates at the etch depth of 5 μm. After the annealing process, we grow ZnO thin films on these ZnO(0001) substrates by plasma-assisted molecular beam epitaxy. Films grown directly on the substrate show a 3D growth mode in the initial stage of growth with various surface treatments. To overcome this problem, we employ a low temperature grown ZnO buffer layer (LT-ZnO), and a two-dimensionally grown high quality ZnO film is attained.     

One-dimensional ZnO nanostructure-based optoelectronic

Semiconductor nanowires, with their unique capability to bridge the nanoscopic and macroscopic worlds, have been demonstrated to have potential applications in energy conversion, electronics, optoelectronics, and biosensing devices. Onedimensional(1D) ZnO nanostructures, with coupled semiconducting and piezoelectric properties, have been extensively investigated and widely used to fabricate nanoscale optoelectronic devices. In this article, we review recent developments in 1D ZnO nanostructure based photodetectors and device performance enhancement by strain engineering piezoelectric polarization and interface modulation. The emphasis is on a fundamental understanding of electrical and optical phenomena, interfacial and contact behaviors, and device characteristics. Finally, the prospects of 1D ZnO nanostructure devices and new challenges are proposed.     

Luminescence of ZnO nanopowders

The luminescence of ZnO nanocrystals prepared by different methods was studied under pulsed electron beam excitation. It is shown that the luminescence intensity depends on the nanocrystal sintering conditions and does not depend on the nanocrystal size within the range 10–50 nm. The relative luminescence intensities for the 3.32 eV (free exciton) and 3.20 eV (bound exciton) bands showed a dependence on nanocrystal size. The role of the nanocrystal surface in excitonic luminescence is discussed.     

ZnO纳米线的制备

利用磁控溅射技术在Si衬底上沉积的锌膜进行热氧化后,得到一维ZnO纳米线。