Up-conversion luminescence and optical temperature-sensing properties of Er3+-doped perovskite Na0.5Bi0.5TiO3 nanocrystals

In this work we demonstrate the preparation of Er³⁺ doped perovskite ferroelectric Na_0.5Bi_0.5TiO₃ nanocrystals and their application in temperature sensing. The samples were synthesized via a facile hydrothermal method. Upconversion emission at 528 nm and 547 nm from two thermodynamically coupled excited states of Er³⁺ were recorded in the temperature from 80 K to 480 K under the excitation of a 980 nm diode laser. The emission intensity ratio (I₅₂₈/I₅₄₇) as a function of the temperature was investigated. A sensitivity of 0.0053 K⁻¹ is observed at 400 K, suggesting they are promising candidate for nanothermometers.     

Transverse piezoelectric properties of Mn-doped Bi0.5Na0.5TiO3 thin films

Lead-free (Bi_0.5Na_0.5)(Ti_1-xMn_x)O₃ (BNTMn-x; x = 0, 0.0025, 0.0050, 0.0100) thin films were fabricated using a chemical solution deposition method on Pt/TiO₂/SiO₂/Si substrate. The effect of Mn substitution on crystal structures, surface morphologies, and ferroelectric and transverse piezoelectric properties of BNTMn-x thin films was investigated. The 0.5 mol% Mn-doped (Bi_0.5Na_0.5)(Ti_0.995Mn_0.005)O₃ thin film exhibited a well-saturated ferroelectric P-E hysteresis loop at room temperature. A remnant polarization (P_r) of 16 μC/cm² was obtained for the BNTMn-0.0050 film at an applied electric field of 400 kV/cm. In addition, a 1.12-μm-thick BNTMn-0.0050 film was applied as a cantilever. The Pt/BNTMn-0.0050/Pt/TiO₂/SiO₂/Si unimorph cantilever exhibited a high transverse piezoelectric coefficient ($e_{31}^1$) of 2.43 C/m².     

Photoluminescence and electrical properties of Eu-doped (Na0.5Bi0.5)TiO3 ferroelectric single crystals

Eu³⁺-doped Na_0.5Bi_0.5TiO₃ (Eu:NBT) single crystals were grown by a top-seeded solution growth method. Photoluminescence emission and excitation spectra of Eu:NBT were investigated. The two transitions in ⁷F₀ → ⁵D₀ excitation spectra reveal that Eu³⁺ ions were incorporated into two adjacent crystallographic sites in NBT, i.e., Bi³⁺ and Na⁺ sites. The former has a symmetrical surrounding, while the later has a disordered environment, which was confirmed by decay curve measurements. The dielectric dispersion behavior was depressed and the piezoelectric and ferroelectric properties were improved after Eu doping.     

Bi-fluctuation in Na0.5Bi0.5TiO3 ferroelectric ceramics with abnormal relaxor behaviour

ABSTRACT

The existence of Bi-fluctuation dispersing in Na_0.5Bi_0.5TiO₃ (NBT) relaxor ferroelectric is hinted in other recent studies. However, this fluctuation has not been directly observed yet. We introduce the Bi-rich nano-regions with different sizes in a series of NBT ceramics by the slight excess of Bi³⁺ content. The crystal symmetries of the Bi-rich nano-regions and the NBT matrix are rhombohedral. The lattice parameters of the nano-regions are larger than those of the matrix in NBT ceramics, which were confirmed by the X-ray diffraction Rietveld refinement, TEM techniques and first-principles calculation. Also, the disorder-induced nano-regions appearing as Bi-fluctuation are associated with the complex phase transitions and the high-frequency relaxor behaviour of NBT suggested by the dielectric measurements and Raman spectra.     

Dielectric properties and electrical conduction of La2O3-doped (Bi0.5Na0.5)0.94Ba0.06TiO3 ceramics

La₂O₃ (2 wt%)-doped (Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃ (abbreviated as BNBT6) lead-free piezoelectric ceramics were synthesized by conventional solid-state reaction. X-ray diffraction (XRD) patterns indicated that La₂O₃ has diffused into the lattice of BNBT6 ceramics and formed a solid solution with a pure perovskite structure. Addition of La₂O₃ decreased the piezoelectric properties and electrical conductivity. It was used to study the electrical conductivity of the La₂O₃-doped BNBT6 lead-free piezoelectric ceramics combined with electrical modulus and impedance plots at the temperature range over 788–873 K. The values of activation energy derived from the electrical impedance and modulus were found to be 0.51 and 0.50 eV, respectively. The discrepancy between activation energy of relaxation frequency and the activation energy (0.25 eV) of dc electrical conductivity might have been due to a short-range migration or hopping of single ionized oxygen vacancy and a long-range migration or hopping of charge carriers over the whole disordered system, respectively.     

Enhanced electrical and ferroelectric properties in a multiferroic (BiFeO3/Bi0.5Na0.5TiO3)3/LaNiO3 superlattices structure

Artificial multiferroic superlattices (SL), consisting of BiFeO₃ (16 nm)/Bi_0.5Na_0.5TiO₃ (5 nm) (BFO/BNT SL), were grown on (001) SrTiO₃ single crystal by pulsed laser deposition method. The cross-sectional, surface morphology, and crystallographic structure of BFO/BNT SL and BFO single layer were investigated. It was found that the electrical, ferroelectric, and magnetic properties of BFO/BNT SL exhibit a remarkably enhancement compared with BFO single layer. The influence of BNT buffering layer, lattice strain, and interfaces interplay of the SL structure are supposed to benefit their ferroelectric and ferromagnetic properties. Our works suggested the BFO/BNT SL with an improved multiferroic characteristics have a promising application for the future informational storage devices.     

Improved electrical properties in La- and V-co-doped Na0.5Bi4.5Ti4O15 thin films

Ferroelectric La- and V-co-doped Na_0.5Bi_4.5Ti₄O₁₅ (NLBTV) thin film was prepared on Pt(111)/Ti/SiO₂/Si substrates by using a chemical solution deposition method and annealed at 750?°C under oxygen atmosphere. Crystal structure of the thin film was investigated by X-ray diffraction and Raman scattering. Surface morphology of the thin film was investigated by scanning electron microscopy. The NLBTV thin film capacitor exhibited better ferroelectric properties such as larger remnant polarization and smaller coercive electric field than Na_0.5Bi_4.5Ti₄O₁₅ (NBT) thin film capacitor. Reduced leakage current was observed in the NLBTV thin film capacitor compared to the NBT thin film capacitor. Almost no polarization fatigue was observed up to 1.44×10¹⁰ switching cycles.     

Thermal stability and frequency up-conversion properties of Er3+-doped oxyfluoride tellurite glasses

The thermal properties of 68TeO2-15BaF2-5SrF2-10LaF3-2KF glass were measured by different temperature analysis (DTA). Up-conversion luminescence of Ers+ ion in the obtained glass was investigated.Mechanism of up-conversion emission was discussed. The result shows that the obtained oxyfluoride tellurite glass 68TeO2-15BaF2-5SrF2-10LaF3-2KF has a good thermal stability (△T = 153.6 ℃) and strong up-conversion green emissions around 527 nm and 549 nm and red emission at 660 nm. This glass can be a promising host material for up-conversion fiber lasers.     

The effect of CuO and NiO doping on dielectric and ferroelectric properties of Na0.5Bi0.5TiO3 lead-free ceramics

In the present work, lead-free piezoelectric ceramics (Na_0.5Bi_0.5)TiO₃ –xCuO–yNiO (for x = 0.0, 0.02, 0.04 and 0.06) have been prepared by a conventional solid-state reaction method. An investigation of CuO and NiO doping in bismuth sodium titanate (BNT) and a study of the structure, morphology, and dielectric and ferroelectric properties of the NBT–CuNi system have been conducted. Phase and microstructural analysis of the (Na_0.5Bi_0.5)TiO₃ (NBT) based ceramics has been carried out using X-ray diffraction and scanning electron microscopy (SEM) techniques. Field emission scanning electron microscopy (FE-SEM) images showed that inhibition of grain growth takes place with increasing Cu and Ni concentration. The results indicate that the co-doping of NiO and CuO is effective in improving the dielectric and ferroelectric properties of NBT ceramics. Temperature-dependent dielectric studies have also been carried out at room temperature to 400 °C at different frequencies. The NBT ceramics co-doped with x = 0.06 and y = 0.06 exhibited an excellent dielectric constant ?_r = 1514. The study suggests that there is enormous scope of application of such materials in the future for actuators, ultrasonic transducers and high-frequency piezoelectric devices.     

Influence of sintering conditions on structural,thermal, electric and ferroelectric properties of Na0.5Bi0.5TiO3 ceramics

Na_0.5Bi_0.5TiO₃ ceramics were prepared by a conventional solid-state reaction method and by a hot-pressing route. The influence of sintering conditions on structural, thermal, dielectric and ferroelectric properties of these ceramics was investigated. All obtained samples exhibited a single perovskite phase. It was shown that the sintering conditions significantly influence the properties under investigation. This includes changes in the value of the electric permittivity ? and dielectric loss tanδ, a shift of T_m and T_d and change of the ferroelectric properties. These effects are mainly related to volatility of the Na and Bi components during the sintering process along with formation of their compensating charge defects, which leads to local structure change.     

Dielectric,ferroelectric and field-induced strain response of lead-free BaZrO3-modified Bi0.5Na0.5TiO3 ceramics

Lead-free piezoelectric ceramics (1 − x)Bi_0.5Na_0.5TiO₃–xBaZrO₃ (BNT–BZ100x, with x = 0–0.10) were prepared using a conventional solid-state reaction method. The crystal structure, microstructure, dielectric, ferroelectric, and piezoelectric properties of BNT–BZ100x ceramics were studied as functions of different BZ content. X-ray diffraction patterns revealed that the BZ completely diffused in the BNT lattice in the studied composition range. An appropriate amount of BZ addition improved the dielectric, ferroelectric, and piezoelectric properties of BNT ceramics. The remanent polarization (P_r) and piezoelectric constant (d₃₃) increased from 22 μC/cm² and 60 pC/N for pure BNT to 30 μC/cm² and 112 pC/N for x = 0.040, respectively. In addition, electric field-induced strain was enhanced to its maximum value (S_max = 0.40%) with normalized strain (d*₃₃ = S_max/E_max = 500 pm/V) at an applied electric field of 8 kV/mm for x = 0.055. The enhanced strain can be attributed to the coexistence of ferroelectric and relaxor ferroelectric phases.     

Fluorescence and attenuation properties of Er3+ -doped phosphate-glass fibers and efficient infrared-to-visible up-conversion

Fluorescence spectra of phosphate glasses with different erbium doping have been measured. The flourescence intensity reaches its maximum at an Er³⁺-doping concentration of 0.75 mol%. When the Er³⁺ doping exceeds 0.75 mol%, the fluorescence intensity decreases due to concentration quenching. The attenuation at 1.53 µm of the fiber is 12.8 db/m. The fluorescence up-conversion of 1.064 µm Nd:YAG laser pulses into intense green 547 and 667 nm light in the fiber has been measured. The fluorescence output power of green (547 nm) and red (667 nm) light is 178 and 42 W, respectively with an excitation power of 1 W. The two signals are referred to as⁴ S _3/2 ⁴ I _{1 5/2} and⁴ F _9/2 ⁴ I _{1 5/2} transitions through two-photon absorption fluorescence.     

Bi0．5Na0．5TiO3纳米晶的制备及其性能研究

采用凝胶自燃烧法合成Bi0.5Na0.5TiO3纳米粉体,并表征了粉体的晶相结构.测试表明应用凝胶自燃工艺合成的Bi0.5Na0.5TiO3粉体材料的粒子大小均匀,晶相单一,不需要经高温处理便能直接形成钙钛矿结构超细粉末.用所合成的粉末压片,1 125 ℃烧结2 h即可获得致密的烧结体,其相对密度为98.08%.用SEM观察烧结样品的平均粒径为2 μm.     

Improvement of the electrical properties of TiO2-doped Bi5Nb3O15 thin films by the addition of MnO2

The leakage current density of a 1.0 mol% TiO₂-doped Bi₅Nb₃O₁₅ (TB₅N₃) film was high, and the breakdown electric field was low. This could be attributed to the presence of intrinsic oxygen vacancies and free electrons. The electrical properties of the TB₅N₃ film improved upon the addition of MnO₂ because of the formation of extrinsic oxygen vacancies, which caused the number of intrinsic oxygen vacancies to decrease in order to maintain the equilibrium concentration of oxygen vacancies in the film. However, the electric properties degraded when the MnO₂ content exceeded 15.0 mol% because of the formation of interstitial oxygen ions and holes. The dielectric constant (?_r) of the TB₅N₃ film slightly decreased upon the addition of a small amount of MnO₂. The TB₅N₃ film with 15.0 mol% MnO₂, which exhibited a small leakage current density of 2.5 × 10^?11 A/cm² at 0.15 MV/cm and a high breakdown electric field of 0.47 MV/cm, still maintained a large ?_r of 118 with a small loss tangent of 2.0% at 100.0 kHz.     

Synthesis and luminescence properties of Eu3+,Bi3+-doped BaWO4 phosphors

BaWO₄:Eu³⁺,Bi³⁺ phosphors have been prepared by the conventional high-temperature solid-state reaction and chemical precipitation. The materials were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and photoluminescence (PL) technologies. When the phosphors are prepared by the high-temperature solidstate reaction, Bi³⁺ doping into BaWO₄:Eu³⁺ can increase the emission intensity of 613 nm. However, maximum emission at about 595 nm was observed in Eu³⁺,Bi³⁺-doped BaWO₄ phosphors prepared by the chemical precipitation. The decay constants (monitored at 595 and/or 613 nm) are within 45–100 s. The color purity of the Ba_0:865WO₄: Eu_0:11,Bi_0:025 phosphor (prepared by chemical precipitation) was 100%. The emission mechanism of Eu³⁺,Bi³⁺ in the BaWO₄ phosphors is briefly discussed.     

Enhancement of up-conversion luminescence in Zn2SiO4:Yb3+, Er3+ by co-doping with Li+ or Bi3+

Yb³⁺/Er³⁺ co-doped Zn₂SiO₄ ceramics are rapidly synthesized by the microwave radiation method. Green and red up-conversion emissions are observed in Zn₂SiO₄: Yb³⁺, Er³⁺ ceramics under 980 nm excitation. The influence of co-doped Li⁺ or Bi³⁺ ion on luminescence intensity for the phosphors has been investigated. At Li⁺ or Bi³⁺ doping concentration of 1 mol%, up-converted green emission can be increased by 6 times and 20 times, respectively. It is believed that co-doped Li⁺ or Bi³⁺ ion results in the local distortion of Er³⁺ in Zn₂SiO₄, increasing the intra-4f transitions of Er³⁺ ions. The local distortion is proved by spectral probing method with Eu³⁺.     

Synthesis and luminescence properties of Er3+-doped Lu3Ga5O12 nanocrystals

The concentration-dependent luminescence properties of sol–gel-derived nanocrystalline Lu_3(1?x)Er_3xGa₅O₁₂ powders (where x=0.01, 0.05 and 0.1) have been studied. Laser-excited luminescence spectra, emission decays and upconversion luminescence of Er³⁺-doped Lu₃Ga₅O₁₂ nanocrystalline samples have been measured. The decay curve of the (²H_11/2,⁴S_3/2) emission exhibits a non-exponential behavior presumably due to cross-relaxation process. Moreover, near-infrared to visible upconversion luminescence has been observed in the green region for 1.0 mol% Er³⁺ ions in Lu₃Ga₅O₁₂ nanocrystals upon 815 nm excitation. The power dependence of the anti-Stokes luminescence suggests that upconversion is probably achieved through the sequential absorption of two photons. To the best of our knowledge, this is the first report on the preparation and optical properties of Er³⁺-doped Lu₃Ga₅O₁₂ in the form of nanocrystalline powders.     

Na0.25K0.25Bi0.5TiO3无铅压电陶瓷的介电特性研究

用固相反应法制备了Na0.25K0.25Bi0.5TiO3(NKBT50)陶瓷,研究了该陶瓷在室温至400℃温度范围内的介电性能.发现该陶瓷的介电温谱与烧结气氛、极化状态有关.在空气中烧结的未极化样品在70℃附近存在介电和损耗峰,而极化后及在氧气氛中烧结的样品并不存在该介电、损耗峰.分析认为70℃的介电和损耗峰与氧空位形成的缺陷偶极子的极化弛豫有关.热激电流显示,陶瓷的去极化温度为225℃,与此相对应的介电、损耗峰也与氧空位有关.