Enhancement of the light extraction of GaN-based green light emitting diodes via nanohybrid structures

Improvement in the light extraction efficiency (LEE) of GaN-based green light emitting diodes (LEDs) with ZnO nanostructures synthesized by a hydrothermal method is reported. Formation of ZnO nanorods, hemispheres, and cones was controlled by varying the pH of the aqueous synthesis solution. The shape of the ZnO nanostructures integrated onto the LEDs shows a strong relationship with the LEE characteristics of GaN-based green LEDs. The electroluminescence (EL) intensity of LEDs covered by ZnO nanostructures increased compared to conventional LEDs. In terms of LEE, LEDs with surface-textured ZnO hemispheres showed the highest EL intensity, which can be attributed to an increase in the effective critical angle, the escape cone, and multiple scattering. Finite difference time domain (FDTD) simulation was conducted to theoretically confirm the experimental results.     

Enhancement of light extraction efficiency of organic light emitting diodes using nanostructured indium tin oxide

Improved outcoupling efficiency of organic light emitting diodes (OLEDs) is demonstrated by incorporating a nanostructured indium tin oxide (NSITO) film between a conducting anode and a glass substrate. NSITO film was fabricated using rf-sputtering at oblique angle (85°). Significant reduction in refractive index and improved transmission of NSITO film was observed. OLEDs were then fabricated onto NSITO film to extract the ITO-glass waveguided modes. Extraction efficiency was enhanced by 80% without introducing any detrimental effects to operating voltage, current density, and angular invariance of emission spectra of OLEDs.     

Improved light extraction of organic light emitting diodes with a nanopillar pattering structure

We have investigated the properties of organic light emitting diodes(OLEDs)with a nanopillar patterning structure at organic–metal or organic–organic interfaces.The results demonstrate that the introduction of a nanopillar structure can improve the light extraction efficiency greatly.We also find that the number,height,and position of nanopillars all affect the light extraction of OLEDs.The maximum power efficiency of a device with an optimized nanopillar patterning mode can be improved to 2.47 times that of the reference device.This enhancement in light extraction originates from the improved injected carriers,the broadened charge recombination zone,and the intensified wave guiding effects.     

Light extraction efficiency enhancement in organic light emitting diodes based on optimized multilayer structures

The main focus of this study is to improve the light extraction efficiency, as well as directionality of organic light emitting diodes (OLEDs) using multi-layer structures between Indium tin Oxide (ITO) and glass layers in a typical OLED. In conventional OLEDs, only about half of the light generated in the emission zone can reach to the glass substrate due to refractive index mismatch in ITO (n = 1.8?i0.01)/glass (n = 1.51) interface. The main attempt is to reduce the share of total internal reflection (TIR) and hence, the effect of different structures such as Thue-Morse and Fibonacci have been investigated and optimized with suitable layer thickness and materials based on Transfer Matrix Method (TMM). The most effective Multi-layer structures have been added to conventional OLED and have been analyzed the extraction efficiency using Finite Difference Time Domain (FDTD) method. Results show large enhancement of extraction efficiency (about 40%) in ITO/glass interface. Using this idea and applying micro-lenses array to glass substrate at the same time, one can get even higher extraction efficiency in OLED. The interesting aspect of this project is its easy fabrication process in order to commercialize the product with highest extraction efficiency and low fabrication cost.     

Polymer photonic band-gaps fabricated by nanoimprint lithography

We report on the fabrication and characterization of photonic band-gaps structures by nanoimprint lithography in a dye-doped polymer. Photonic band calculations show that photonic crystal slabs composed of a triangular array of polymer pillars could exhibit photonic band-gaps for the magnetic-like modes. The resulting structures show that the nanoimprint lithography process is well-suited to fabricate in a single-step process, these challenging photonic structures opening perspectives to realize integrated photonic band-gap circuits.     

High extraction efficiency,laterally injected,light emitting diodes combining microcavities and photonic crystals

The use of photonic crystals (PCs) for realistic light emitting diodes (LEDs) is discussed, given the constraints of planar semiconductor technology. A viable route for the fabrication of high-efficiency high-brightness electrically injected LEDs is presented. The starting point is a top-emitting microcavity using a single Alox Bragg mirror. The active area is surrounded by two-dimensional PCs, namely arrays of air rods etched through the top layers; injection of the electrons is achieved through the crystals. Design rules for PCs as efficient out-couplers are detailed. The building blocks are assessed experimentally, and we show that promising results are at hand.     

Design and development of organic light emitting diodes

A highly luminescent thiophene based conjugated polymer, i.e., poly[2-(3-thienyl) ethanol butoxy carbonyl–methyl urethane] (PURET) has been used for fabricating polymeric light emitting diodes in the present investigations. PURET has been doped with varying amount of (4-dicyano methylene-2 methyl-6-(p-dimethyl amino styryl)-4H-pyran) dye. Enhanced electroluminescence (EL) and quantum efficiency has been observed by incorporating small amount of dye. An attempt has been made to understand the mechanism of charge transport, which helped in the understanding of the possible reasons for enhancement of EL emission as a function of dye concentration and allowed for further optimization of device performance. Based on capacitance–voltage (C–V) analysis it is proposed that the devices in the present investigations, may be modeled as a resistance and capacitor in parallel for the frequency range of 20 Hz–1 MHz. The enhancement in EL intensity and external quantum efficiency of PURET has been observed in addition of small amount of dye which is attributed to the trapping of excitons and enhanced probability electron–hole recombination in EL layer. In addition, voltage tunable color emission has also been observed. This is attributed to the charge transport among the various layers depending upon the applied voltage.     

Simple-structure white organic light emitting diodes with high color temperature

We present high color temperature white organic light emitting diodes with a simple p-i-n structure. A sky blue phosphorescent dopant of iridium(III) bis[4,6-(difluorophenyl)-pyridinato-N,C^2’] picolinate and a red phosphorescent dopant of bis(2-phenylquinoline)(acetylacetonate)iridium(III) in the emissive layers is employed to make high color temperature devices. Very stable color variation under ?0.02 until a 5000 cd/m² brightness value is realized by efficient carrier control in a multi stacked emitting layer of blue/red/blue colors. Maximum current and power efficiencies of 23.8 cd/A and 22.9 lm/W in forward direction are obtained. With balanced emissions from the two emitters, the white light emission with very high correlated color temperature of 7308 K as well as CIE coordinates of (0.30, 0.33) is achieved.     

High-contrast organic light emitting diodes with a partially absorbing anode

To be legible in high-ambient light conditions, organic light-emitting-diode displays should be optically designed to have a minimal reflectance without significantly affecting their overall efficiency. We demonstrate the use of an anode consisting of a partially absorbing metal layer and a multilayer distributed Bragg reflector to simultaneously absorb rather than reflect incoming light and to take advantage of a weak microcavity effect in the diode to improve light outcoupling.     

Efficient blue phosphorescent organic light emitting diodes with host engineering

We demonstrate as much as possible blue color and high efficiency phosphorescent organic light-emitting diodes (PHOLEDs) by using well-known iridium(III)bis[(3,5-difluoro-4-cyanophenyl)-pyridinato-N,C′]picolinate (FCNIrpic) dopant and previously reported good host materials. For the control of blue color and efficiency, various host materials, 1,3-bis(carbazole-9-yl)benzene (mCP), 9-(3-(9H-carbazole-9-yl)phenyl)-3-(dibromophenylphosphoryl)-9H-carbazole (mCPPO1), and 2,8-di(9H-carbazol-9-yl)dibenzo[b,d]furan (DFCz), bis(4-(N-carbazole)phenyl)dimethylsilane (2MCBP) are selected and investigated their performances. A maximum external quantum efficiency (EQE) of 23.9% and power efficiency of 30.2 lm/W are achieved from 2MCBP device with Commision Internationale de L'Eclairage color coordinates (CIE_x,y) of (0.14, 0.21). The deepest color with color coordinate of (0.14, 0.19) is obtained for the mCP device.     

Fabrication of semiconductor-and polymer-based photonic crystals using nanoimprint lithography

The technology of fabricating photonic crystals with the use of nanoimprint lithography is described. One-and two-dimensional photonic crystals are produced by direct extrusion of polymethyl methacrylate by Si moulds obtained via interference lithography and reactive ion etching. The period of 2D photonic crystals, which present a square array of holes, ranges from 270 to 700 nm; the aperture diameter amounts to the half-period of the structure. The holes are round-shaped with even edges. One-dimensional GaAs-based photonic crystals are fabricated by reactive ion etching of GaAs to a depth of 1 μm through a mask formed using nanoimprint lithography. The resulting crystals have a period of 800 nm, a ridge width of 200 nm, and smooth nearly vertical side walls.     

ITO‐free top emitting organic light emitting diodes with enhanced light out‐coupling

Bottom emitting organic light emitting diodes (OLEDs) can suffer from lower external quantum efficiencies (EQE) due to inefficient out‐coupling of the generated light. Herein, it is demonstrated that the current efficiency and EQE of red, yellow, and blue fluorescent single layer polymer OLEDs is significantly enhanced when a MoO_x(5 nm)/Ag(10 nm)/MoO_x(40 nm) stack is used as the transparent anode in a top emitting OLED structure. A maximum current efficiency and EQE of 21.2 cd/A and 6.7%, respectively, was achieved for a yellow OLED, while a blue OLED achieved a maximum of 16.5 cd/A and 10.1%, respectively. The increase in light out‐coupling from the top‐emitting OLEDs led to increase in efficiency by a factor of up to 2.2 relative to the optimised bottom emitting devices, which is the best out‐coupling reported using solution processed polymers in a simple architecture and a significant step forward for their use in large area lighting and displays.     

纳米压印技术制备表面光子晶体LED的研究

利用表面光子晶体能大幅提高发光二极管(LED)的外量子效率, 但如何制备大面积的纳米光子晶体是该研究方向的主要难点之一. 本文基于纳米压印技术在氮化镓基发光二极管(GaN-LED)表面制作孔状二维光子晶体. 通过以金属和聚合物双层掩膜干法刻蚀法, 得到了很好的光子晶体图形转移效果. 最终在LED的p-GaN层表面获得了大面积光子晶体, 周期为450 nm, 纳米孔直径为240 nm. 器件测试结果显示, 有表面光子晶体的LED比没有光子晶体的LED, 光致发光强度峰值提高到了7.2倍.     

Numerical and experimental studies of mixed-host organic light emitting diodes

Electrical characteristic and luminance of three mixed-host organic light emitting diodes (OLEDs): namely the uniformly mixed, step-wise graded and mixed, and continuously graded and mixed, were compared with the conventional hetero-junction OLED in both numerical and experimental studies. These mixed-host OLEDs were fabricated by a mixed-source thermal evaporation process, and half-cell devices were also fabricated to provide some input parameters for OLED simulations. The current efficiencies were largely influenced by their device structures and strongly agreed with the computed current balance factors. The improved mixed-host OLED performances can be discussed with aid from simulations, which include spatial distributions of electron and hole, carrier mobility, electric field profiles, the total recombination rates in the light emitting layer.     

光致电化学法提高垂直结构发光二极管出光效率的研究

研究了在垂直结构发光二极管(VLED)器件中, 光致电化学法(PEC)刻蚀N极性n-GaN的速率受不同刻蚀条件(刻蚀浓度、刻蚀时间和光照强度)的影响. 并选择N极性n-GaN表面含有较理想六角金字塔结构(侧壁角为31°)的样品制成器件, 研究PEC刻蚀对VLED的欧姆接触和光电性能的影响. 结果表明, 与未粗化样品相比, PEC刻蚀后的样品接触电阻率明显降低, 形成更好的欧姆接触; 其电学特性有较好的改善, 光输出功率有明显提高, 在20 mA电流下光输出功率增强了86.1%. 对不同金字塔侧壁角度的光提取效率用时域有限差分法(FDTD)模拟, 结果显示光提取效率在侧壁角度为20°– 40°有显著提高, 在23.6° (GaN-空气界面的全反射角)时达到最大.     

Alternating current organic light emitting diodes based on polymer heterojunction

Most alternating current (ac) polymer EL (electroluminescent) devices to date are based on symmetrical structure. Here novel alternating current EL devices with asymmetric structure are successfully fabricated by using a hole type polymer PDDOPV [poly (2,5-bis (dodecyloxy)-phenylenevinylene)] and an electron type polymer PPQ [poly (phenyl quinoxaline)]. We report that performance of polymer devices with heterojunction in ac operation is not so sensitive to thickness of the two polymer layers as in direct current (dc) operation. This new advantage of ac operation mode over dc means easy production and cheap facilities in large-scale production in the near future. Different emission spectra are obtained when our ac devices operate in ac mode, forward and reverse bias. Emission spectrum at reverse bias includes two parts: one is from PDDOPV, the other is from PPQ.     

全息技术制作二维光子晶体蓝宝石衬底提高发光二极管外量子效率

为了提高GaN基发光二极管(LED)的外量子效率,在蓝宝石衬底制作了二维光子晶体.衬底上的二维光子晶体结构采用激光全息技术和感应耦合等离子体(ICP)干法刻蚀技术制作,然后采用金属氧化物化学气相沉积(MOCVD)技术在图形蓝宝石衬底(PSS)上生长2μm厚的n型GaN层,4层量子阱和200nm厚的p型GaN层,形成LED结构.衬底上制作的二维光子晶体为六角晶格结构,晶格常数为3.8μm,刻蚀深度为800nm.LED器件光强输出测试结果显示,在PSS上制作的LED(PSS-LED)的发光强度普遍高于蓝宝石平 关键词： 全息 发光二极管 图形蓝宝石衬底 外量子效率     

Exciton dissociation in organic light emitting diodes at the donor-acceptor interface

Experimental in situ photoluminescence and transient photovoltage results show that the interface formed by N, N{'}-Bis(naphthalene-1-yl)-N, N{'}-bis(phenyl) benzidine (NPB) and tris(8-hydroxyquinoline) aluminum (Alq{3}) acts as an exciton dissociation site. Because of this dissociation effect, excitons formed in NPB at or within a diffusion length of the interface tend to dissociate before they radiatively decay to generate blue light. This suggests that the action of the "hole-blocking layer" used in indium tin oxide\NPB\hole-blocking layer\Alq{3}\aluminium to promote blue light emission from the NPB is more "exciton dissociation inhibition" than "hole blocking."     

3,4,9,10-Perylenetetracarboxylicdiimide as an interlayer for ultraviolet organic light emitting diodes

Ultraviolet organic light emitting diodes with 3,4,9,10-perylenetetracarboxylicdiimide (PTCDI) interlayer have been achieved. The emission spectrum and intensity were strongly dependent on the thickness of PTCDI interlayer, in spite of the fact that PTCDI has neither much lower HOMO nor much higher LUMO level, which is considered necessary for efficient charge blocking layers. The influence of PTCDI layer was investigated in three different device configurations and obtained results are discussed. For optimal device configuration, OLED with emission centered at 370 nm and turn-on voltage of 4.5 V is obtained.