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 共查询到19条相似文献,搜索用时 62 毫秒
1.
通过测量La2/3Ca1/3MnO3,La0.6Ca0.4MnO3单相多晶样品的磁电阻、电阻与温度的依赖关系,发现在La1-xCaxMnO3体系中随x的变化,其磁电阻峰和电阻峰都发生了位移.作者认为体系中Mn4+含量是受Ca含量调制的,正是Mn4+含量的变化,导致磁性结构发生转变.基于Zener的双交换机制,对实验结果给出了满意的解释  相似文献   

2.
用固相反应法制备了具有钙钛矿结构的La1-xCaxMnO3(x=0和0.33)并对其晶体结构、磁性、电阻和激光显微共聚焦散射拉曼光谱进行了测试、表征和分析.每种样品在激光拉曼光谱上都呈现出高波数峰(~640cm-1)、中波数峰(~500cm-1)和低波数峰(~220cm-1)三个明显的特征峰.它们分别对应锰氧八面体面内氧原子的对称伸缩振动模式,氧原子的反对称伸缩振动模式和氧原子的旋转振动模式.高波数峰随温度的演化呈现出明显的变化行为,并且这种行为及对应的特征温度与材料的磁性和电子输运随温度的变化行为及特征温度基本吻合.但其他两种峰随温度变化没有较为明显的规律性.高波数峰对应的锰氧八面体面内氧原子的对称伸缩振动模式与锰氧化物材料的磁性和电子输运存在本质上的联系.  相似文献   

3.
通过柠檬酸法制备了钙钛矿型氧化物LaMn1-xFexO3(x=0,0.2,0.4,0.5,0.6,0.8,1),经XRD分析,x≤0.2时结构为六角相,x0.2时为正交相。实验测量了材料的拉曼光谱,发现650 cm-1左右的光谱峰位随成分参量x的变化而变化,在x≤0.2时,Raman峰随x增大向高频移动,x0.2时,则向低频移动。  相似文献   

4.
5.
(002)取向AIN薄膜的Raman光谱赵永年王波何志罗微邹广田(吉林大学超硬材料国家重点实验室长春130023)RamanSpectraofAINFilmsOrientedin(002)ZhaoYongnian,WangBo,HeZhi,LuoWe...  相似文献   

6.
In this paper, we briefly report the property difference of La_(1-x)Sr_xMnO_3 (x=0.1) ultra-thin films (~([001]) orientation) at different thickness grown on SrTiO_3 (100) substrate.It is found that the magnetic interaction is greatly enhanced when film t…  相似文献   

7.
Both tensile strain and compressive strain effects on the properties of La_(1-x)Sr_xMnO_3 (x=0.1) films were investigated.The films on SrTiO_3 (100) display 'unusual' tensile strain~([1]), which supports a ferromagnetic metallic behavior when film thickness is larger than 10nm.The films on NdGaO_3 (100) presenting compressive strain, on the other hand, demonstrate strongly enhanced insulating behavior.Inordertoobtainunambiguousresults,allfilmsampleswerepreparedusingthesamedepositionconditi…  相似文献   

8.
用固相合成法制备了La2/3Ca1/3Mn1-xFexO3(x=0、0.1、0.2)材料,通过X射线衍射、磁化强度-温度曲线、电子自旋共振谱线,研究了Fe替代部分的Mn对La2/3Ca1/3Mn1-xFexO3电磁性质的影响.结果表明:Fe离子掺杂对晶体结构影响较小;对电磁输运性质和磁结构影响较大,体系在低温区域较宽的温度范围内显示出巨磁电阻效应;ESR的测量结果也表明Fe离子掺杂形成反铁磁的交换作用,阻塞了铁磁Mn3+-O-Mn4+双交换通道,降低了体系的铁磁性.  相似文献   

9.
利用固相反应方法制备了名义成分为La2 / 3Ca1 / 3Mn1 -xFexO3(0 .0 1≤x≤ 0 .2 0 )的一系列样品 .在整个掺杂范围内晶体结构没有明显变化 .在室温下测量了各样品的M ssbauer谱 ,拟合结果表明 +3价高自旋态的铁离子占据锰的八面体晶位 ,随Fe掺杂量的增加 ,铁离子的 3d电子出现局域化趋势 ,并伴随Fe O配位体畸变程度的增强 .本文对此进行了讨论 .  相似文献   

10.
研究了La_(1-x)Sr_xMnO_3+ZLa_2O_3的电磁特性,解释了其中存在的两类不同类型的金属-半导体转变,提出了在基本保持材料铁磁性的情况下,可以方便地改变材料的电导特性,从金属型转变为半导体型,对半导体型材料,还可以方便地调节它的平均电导激活能。  相似文献   

11.
用射频磁控溅射以纯金属钒做靶材在氩氧混合气体中制备了钒氧化物 (VO2 (B)、V6O1 3、V2 O5)薄膜。报导了钒氧化物薄膜的拉曼光谱 ,结合这些钒氧化物不同的结构特点 ,对它们的拉曼光谱进行了分类讨论  相似文献   

12.
傅宏刚  王旭 《光散射学报》1999,11(2):113-117
本文在288K和378K测定了不同La含量Pb1-xLaxTi1-x/4O3纳米晶的拉曼光谱,同时在室温条件下测定了不同晶粒尺寸的Pb0.9La0.1Ti0.975O3纳米晶的拉曼光谱,研究了La含量和晶粒尺寸对各声子模频率的影响规律,讨论了影响峰形、峰位和峰宽的因素。  相似文献   

13.
Abstract

Resonant enhancement of the Raman scattering cross section in II - IV semiconductors has recently received much attention both theoretically and experimentally. All existing theories anticipate a monotonic increase in the scattering intensities when the scattering radiation energy approaches the direct-energy gap. Contrary to them in an early Raman study of CdS1 a cancellation of scattering efficiencies for the two TO modes prior to the onset of the resonance was pointed out. In a latter work on pure CdS Damen et al.2 found even a more pronounced “antiresonance” behavior of the nonpolar E2 phonon at 41 cm?1. Thus, this striking feature seems to be rather common for the Raman active modes in CdS for which no electrooptic contribution to the scattering amplitude exists. The experimental data were qualitatively explained by assuming a destructive addition between nonresonant and the weaker resonant terms in LoudoN′s expression for the first-order Raman tensor3. Consequently the cancellation energy difference /EG - hwL/ depends on the ratio of the resonant term to the nonresonant terms.  相似文献   

14.
强亮生  王旭 《光散射学报》1999,11(2):118-122
本文在288K和378K温度下测定了不同Ca含量Pb1-xCaxTiO3(PTC)纳米晶的拉曼光谱。同时在室温条件下测定了不同晶粒尺寸Pb0.85Ca0.15TiO3的拉曼光谱。讨论了Ca掺入量、温度、晶粒尺寸等因素对声子频率的影响。声子频率的变化情况表明,对于x≥0.2的PTC纳米晶,与相同Ca含量的陶瓷相比,存在着晶格膨胀的倾向。  相似文献   

15.
立方碳化硅(3C-SiC)薄膜通过化学气相沉积(CVD)制备在Si(100)衬底上。本论文主要通过椭偏光谱仪(SE)和拉曼散射仪对3C-SiC薄膜的微观结构和光学性能进行进一步的研究。根据SE的分析获得3CSiC薄膜厚度;根据拉曼散射的分析:可从TO模式和LO模式的线形形状的拟合得到样品的相关长度和载流子浓度。结果表明:该碳化硅(3C-SiC)薄膜质量随膜厚度增加而得到提高,同时分析了外延层厚度对薄膜特性的影响。  相似文献   

16.
The substitution of trivalent (M=In, Ga) and tetravalent elements (M=Sn, Ti) for Mn(III) and Mn(IV) respectively has been studied in the colossal magnetoresistant (CMR) perovskites Pr0.7Ca0.2Sr0.1MnO3 (type I) and Pr0.5Sr0.5MnO3 (type II). For the former compound, whatever the element, the temperature transition (Tmax or TC) separating the ferromagnetic metallic (FM) state and the paramagnetic semiconductinc (PSC) state decreases dramatically when the substituted element content is increased, the saturated magnetic moment at low temperature being slightly decreased. For these type I perovskites the maximum magnetoresistance is achieved for Pr0.7Ca0.2Sr0.1Mn0.99Ga0.01O3, reaching a resistance ratio of 600 at 127rK against 275 at 151rK for the pristine sample. These results show that by decreasing or increasing the hole concentration via M(IV) or M(III) substitutions on the manganese site the Curie temperature TC is always decreased. In contrast to the type I perovskites, two different effects are evidenced for the Pr0.5Sr0.5Mn1-xMxO3 substituted type II phases depending on the M valence. On one hand for M=Ga, In when x increases the antiferromagnetic semiconducting (AFSC) state and the PSC state are favoured at the expense of ferromagnetism. On the other hand for M=Sn, Ti the low temperature AFSC state tends to disappear and for x>0.04 only a FM to PSC transition still exits similarly to that observed in type I perovskites. Correspondingly the magnetization versus temperature curves evolve from the bell shape curve typical of the charge ordering state to that of a ferromagnetic compound. The effect of valence and d0, d10 electronic configurations in both type I an II CMR perovskites is discussed.  相似文献   

17.
We present evidence that the insulator-to-metal transition in La(1-x)Ca(x)MnO3 near x approximately 0.2 is driven by the suppression of coherent Jahn-Teller distortions, originating from d-type orbital ordering. The orbital-ordered state is characterized by large long-range Q2 distortions below T(O'- O*). Above T(O'- O*) we find evidence for coexistence between an orbital-ordered and an orbital-disordered state. This behavior is discussed in terms of electronic phase separation in an orbital-ordered insulating and an orbital-disordered metallic state.  相似文献   

18.
19.
将CuInSe2薄膜在H2S与Ar的混合气体中硫化是制备CuIn(SxSe1-x)2薄膜的一种常用方法。硫化所用到的CuInSe2薄膜是用溶剂热法生成的CuInSe2纳米颗粒旋涂而成。不同于其他真空条件下制备CuInSe2薄膜的方法.溶剂热法的优点是其相对简单的制备工艺和较低廉的成本。对硫化过程进行研究后发现,硫化温度和时间直接影响CuIn(SxSe1-x)2薄膜的质量,诸如薄膜成分、结晶度、均匀性和带隙宽度都可以通过改变这些实验条件来进行控制。  相似文献   

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