Study of silicon implanted with zinc and oxygen ions via Rutherford backscattering spectroscopy

The structural features and dopant profiles of a Si surface layer implanted with Zn⁺ and O⁺ ions are studied via Rutherford backscattering spectroscopy based on the analysis of He²⁺-ion spectra with the use of the channeling technique. The doping-impurity redistribution is analyzed upon the formation of zinc-oxide nanoparticles. The sample surface morphology is examined by means of atomic-force microscopy and scanning electron microscopy under secondary-electron emission conditions. X-ray phase analysis of the implanted layers is carried out.     

Stopping characteristics of boron and indium ions in silicon

The mean range and its standard deviation are calculated for boron ions implanted into silicon with energies below 10 keV. Similar characteristics are calculated for indium ions with energies below 200 keV. The obtained results are presented in tabular and graphical forms. These results may help in the assessment of conditions of production of integrated circuits with nanometer-sized elements.     

Peculiarities in the cross sections of electron capture by phosphorus ions

The effect of decreasing the cross sections of electron capture by phosphorus (P⁵⁺) ions penetrating through gaseous media has been revealed experimentally. This effect is a violation of the known uniform dependence between the electron-capture cross section and the ion charge. Such an anomaly was not observed in measurements performed with argon ions under the same conditions. A possible reason of decreasing the cross sections of electron capture by P⁵⁺ ions may be autoionization of excited P⁴⁺ ions. The latter are formed during electron capture into excited states by metastable particles of a beam of P⁵⁺ ions.     

Relative multiple ionization cross sections of neon by oxygen ions

The relative multiple ionization cross sections of neon are calculated for 30 MeV oxygen projectiles using the theoretical partial multiplet fluorescence yields and experimental relative intensities.     

Location of self-interstitial atoms in boron-implanted silicon by means of rutherford backscattering of channelled ions

Abstract

For locating self-interstitial atoms in silicon by means of Rutherford backscattering of channelled ions, boron has been implanted at room temperature and at the temperature of liquid nitrogen. The employed implantation doses were 2. 10¹⁴ cm^?2 and 7. 10¹³ cm^?2, respectively. The experiments have been performed at 300 K and at 120 K to reduce ionization-stimulated annealing. The beam of 1.4 MeV He⁺-ions was highly collimated.

To obtain the configuration of implantation-induced self-interstitial atoms symmetry considerations have been performed.

The location experiments presented indicate the existence of isolated self-interstitial atoms in silicon. Under the conditions of these experiments the interstitial atoms assume a (110) split configuration of orthorhombic symmetry.     

Exciton capture cross sections of indium and boron impurities in silicon

Measurements have been made of the decay rates and intensity ratios of photoluminescence lines from Si:In, B. We deduce values for the In and B exciton capture cross sections in the temperature range 3.6 ? 5.9 K. The large difference between the In and B cross sections is discussed in terms of excited states of the In bound exciton.     

Multipole cross sections for collisional excitation of highly charged ions by isotropic electrons

The relativistic distorted-wave program of the flexible atomic code for calculating the cross sections for electron-impact excitation of ions between fine-structure levels is extended to get the multipole components of cross sections in the case of excitation by isotropic electrons. These components may be needed for interpreting the intensity and polarization of line emissions from thermal plasmas exposed to anisotropic radiations, such as the solar corona under photosphere irradiation. Illustrative numerical results are given for excitation of Si-like Fe¹²⁺ between the , and levels. These results can be useful in the analysis of infrared forbidden lines emitted from the solar corona. A comparison is made with the only published work based on the semi-relativistic distorted-wave approximation, showing some agreement for the excitation and discrepancies for the weak transition .     

Differential and total ionization cross sections due to impact of swift heavy ions

In the present work, the Binary stopping power theory was used to calculate total ionization cross section and differential cross section for energy transfer from a swift heavy ion to the target electrons. The dependence on the projectile charge state is studied. The calculated values are compared with the experimental values collected from the literature.     

20—50MeV O5+离子引起Au的L壳层X射线产生截面研究

在北京13 MV串列加速器上利用20—50MeV O⁵⁺离子研究Au的L壳层X射线产生截面. 实验结果表明σ（Ll）/σ（Lα） ,σ（Lβ）/σ（Lα） 和σ（Lγ）/σ（Lα）与EＣＰSSR理论计算结果符合比较好.在实验中由于较高的能量,在能量点存在能移现象. 关键词： 产生截面 ECPSSR X射线     

Chemical cross sections induced by ions in solid organic detectors: Experimentation and simulation

Chemical ester bond scission induced by incoming ions in polyethylene terephthalate (PET), bisphenol A polycarbonate (PC), polyallyl diglycol carbonate (PADC), have been systematically determined by FT-IR transmission measurements. The studied ions (H, He, C, Ne, I, Ar, Fe, Kr, Xe) have LET ranging from 10 to 10 000 keV μm⁻¹. We discuss the opportunity to simulate the experimental chemical cross section obtained with an approach based on the dose deposited by the secondary electrons removed by the incoming ion. Such an approach has been already successfully applied for LR115.     

Modified over-barrier model for ionization cross sections of atomic hydrogen by multiply charged ions

The impact ionization of atomic hydrogen in collisions with H⁺, He²⁺, Li2,3+, C2,3,4,5,6+, N2,3,4,5+, O2,3,4,5,6+, and Ar3,4,5,6+ ions has been studied by the modified over-barrier model at low-to-intermediate velocities. Compared with the calculated results of the classical trajectory Monte Carlo (CTMC) method and the unitarized-distorted-wave approximation (UDWA), this model satisfactorily reproduces the experimentally obtained velocity dependence of the absolute ionization cross sections at intermediate impact velocities.     

Production cross sections for the heaviest nuclei in complete fusion reactions induced by heavy ions

Production of the heaviest nuclei in complete fusion reactions induced by heavy ions has been considered in a systematic way in the framework of the conventional barrier passing model coupled with the statistical model. Available data on excitation functions for fission and production of evaporation residues (ER) in very asymmetric combinations induced by ions lighter than Ne on actinide target nuclei are described rather well in the framework of these models. The data allow one to adjust model parameters and to reveal the quasi-fission effect caused by the interaction with deformed target nuclei, which is manifested in the suppression of the ER production at sub-barrier energies. For reactions induced by Mg and heavier projectiles, quasi-fission is starting to suppress fusion (ER production) at energies above the Coulomb barrier. One has to introduce empirically the quantity of the fusion probability P_fus to reproduce the ER excitation functions in the framework of the conventional approach. The exponential dependence of P_fus on the combined fissility parameter (a similar parameter that was introduced for the extra-push energy scaling) was found in search for scaling for the P_fus values resulting from the data analysis.