Effect of pulsed bias on properties of ZrN/TiZrN films deposited by cathodic vacuum arc

ZrN/TiZrN multilayer are deposited by cathodic vacuum arc method with different substrate bias (from 0 to -800 V), using Ti and Zr plasma flows in residual N₂ atmosphere, combined with ion bombardment of sample surfaces. The effect of pulsed bias on structure and properties of films is investigated. Microstructure of the coating is analyzed by X-ray diffraction (XRD), and scanning electron microscopy (SEM). Meanwhile, the nanohardness, Young's modulus, and scratch tests are performed. The experimental results show that the films exhibit a nanoscale multilayer structure consisting of TiZrN and ZrN phases. Solid solutions are formed for component TiZrN films. The dominant preferred orientation of TiZrN films is (111) and (220). At pulsed bias of -200 V, the nanohardness and the adhesion strength of ZrN/TiZrN multilayer reach a maximum of 38 GPa, and 78 N, respectively. The ZrN/TiZrN multilayer demonstrates an enhanced nanohardness compared with binary TiN and ZrN films deposited under equivalent conditions.     

Effect of pulsed bias on the properties of ZrN/TiZrN films deposited by a cathodic vacuum arc

ZrN/TiZrN multilayers are deposited by using the cathodic vacuum arc method with different substrate bias(from 0 to 800 V),using Ti and Zr plasma flows in residual N 2 atmosphere,combined with ion bombardment of sample surfaces.The effect of pulsed bias on the structure and properties of films is investigated.Microstructure of the coating is analyzed by X-ray diffraction(XRD),and scanning electron microscopy(SEM).In addition,nanohardness,Young’s modulus,and scratch tests are performed.The experimental results show that the films exhibit a nanoscale multilayer structure consisting of TiZrN and ZrN phases.Solid solutions are formed for component TiZrN films.The dominant preferred orientation of TiZrN films is(111) and(220).At a pulsed bias of 200 V,the nanohardness and the adhesion strength of the ZrN/TiZrN multilayer reach a maximum of 38 GPa,and 78 N,respectively.The ZrN/TiZrN multilayer demonstrates an enhanced nanohardness compared with binary TiN and ZrN films deposited under equivalent conditions.     

不同能级加速过滤电弧沉积四面体非晶碳膜的结构和性能

采用过滤阴极真空电弧技术，通过施加0—2000 V衬底负偏压使沉积离子获得不同能级的入射能量，在单晶硅上制备了四面体非晶碳薄膜.拉曼光谱分析表明，薄膜的结构为非晶sp³骨架中镶嵌着平面关联长度小于1 nm的sp²团簇.原子力显微镜研究表明：在低能级、富sp³能量窗口和次高能级，薄膜中sp³的含量越多，其表面就越光滑，应用sp³浅注入生长机制能够圆满地解释薄膜表面形态与离子入射能量之间的关系；但在高 关键词： 四面体非晶碳 过滤阴极真空电弧 能级     

High mobility In2O3:H transparent conductive oxides prepared by atomic layer deposition and solid phase crystallization

The preparation of high‐quality In₂O₃:H, as transparent conductive oxide (TCO), is demonstrated at low temperatures. Amorphous In₂O₃:H films were deposited by atomic layer deposition at 100 °C, after which they underwent solid phase crystallization by a short anneal at 200 °C. TEM analysis has shown that this approach can yield films with a lateral grain size of a few hundred nm, resulting in electron mobility values as high as 138 cm²/V s at a device‐relevant carrier density of 1.8 × 10²⁰ cm^–3. Due to the extremely high electron mobility, the crystallized films simultaneously exhibit a very low resistivity (0.27 mΩ cm) and a negligible free carrier absorption. In conjunction with the low temperature processing, this renders these films ideal candidates for front TCO layers in for example silicon heterojunction solar cells and other sensitive optoelectronic applications. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Thermal stability of ultrathin amorphous carbon films synthesized by plasma-enhanced chemical vapor deposition and filtered cathodic vacuum arc

Abstract

Ultrathin hydrogenated amorphous carbon (a-C:H) films deposited by plasma-enhanced chemical vapor deposition (PECVD) and hydrogen-free amorphous carbon (a-C) films of similar thickness deposited by filtered cathodic vacuum arc (FCVA) were subjected to rapid thermal annealing (RTA). Cross-sectional transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS) were used to study the structural stability of the films. While RTA increased the thickness of the intermixing layer and decreased the sp³ content of the a-C:H films, it did not affect the thickness or the sp³ content of the a-C films. The superior structural stability of the FCVA a-C films compared with PECVD a-C:H films, demonstrated by the TEM and EELS results of this study, illustrates the high potential of these films as protective overcoats in applications where rapid heating is critical to the device functionality and performance, such as heat-assisted magnetic recording.     

Research on the properties of ZnO thin films deposited by using filtered cathodic arc plasma technique on glass substrate under different flow rate of O2

ZnO thin film has been deposited on the glass substrate at a temperature of 200 °C using the filtered cathodic arc plasma (FCAP) technique with the oxygen flow rate of 1.0, 3.0, 5.0, 7.0, 9.0 and 10.0 sccm. The deposition processes are only held in pure oxygen atmosphere. The as-grown films exhibit a polycrystalline hexagonal wurtzite structure. With the oxygen flow rate increase, the crystallinity of the samples first increases and then decreases as measured by X-ray diffractometry (XRD). And the tensile stress exists in all the as-grown thin films. The small grain with a mean diameter of 13 nm is observed by the field emission scanning electron microscopy (FESEM). The electrical resistivity values of the thin films are very low ranging from 5.42 × 10⁻³ Ω cm to 4.0 × 10⁻² Ω cm. According to the result from room temperature photoluminescence spectra measurement, the luminescent bands also depend on the oxygen supply.     

脉冲溅射V2O5薄膜结构和性能研究

V2O5薄膜具有很好的离子注入/退出可逆性,是最有潜力的锂离子储存层的候选材料之一,它的电学特性与制备方法、化学计量比、结构和取向等有直接关系,仔细控制工艺参量是制备出在锂电池上应用的V2O5薄膜关键。研究中采用脉冲磁控反应溅射方法,通过精确地控制氧分压、基底温度等关键工艺参量,在石英玻璃和硅片上制备V2O5薄膜。利用X射线衍射和X射线光电子谱,分析了薄膜的成分、相结构、结晶和价态情况,用原子力显微镜表征了薄膜的微观结构,用分光光度计测量从200—2500nm波段V2O5薄膜纯度高、相结构单一、结晶度好。高低温电阻变化2个量级,薄膜的光学能隙为2.46eV。     

近距离升华沉积CdTe掺Cd薄膜的微结构和电学、光学特性

采用近距离升华技术制备了掺杂Cd元素的CdTe多晶薄膜.利用X射线衍射仪和扫描电子显微镜表征其微结构,用霍尔效应测试仪和紫外可见分光光度计分析其电学、光学特性.结果显示,适量的掺杂Cd元素可改善CdTe薄膜晶形,显著提高薄膜的电导特性,由弱的p型电导转变为导电性能良好的n型电导,但对光能隙影响不大. 关键词： 近距离升华 CdTe薄膜 掺杂Cd 电学和光学特性     

Characterization of Zr-Si-N films deposited by cathodic vacuum arc with different N2/SiH4 flow rates

Zr-Si-N films were deposited on silicon and steel substrates by cathodic vacuum arc with different N₂/SiH₄ flow rates. The N₂/SiH₄ flow rates were adjusted at the range from 0 to 12 sccm. The films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM), hardness and wear tests. The structure and the mechanical properties of Zr-Si-N films were compared to those of ZrN films. The results of XRD and XPS showed that Zr-Si-N films consisted of ZrN crystallites and SiN_x amorphous phase. With increasing N₂/SiH₄ flow rates, the orientation of Zr-Si-N films became to a mixture of (1 1 1) and (2 0 0). The column width became smaller, and then appeared to vanish with the increase in N₂/SiH₄ flow rates. The hardness and Young's modulus of Zr-Si-N films increased with the N₂/SiH₄ flow rates, reached a maximum value of 36 GPa and 320 GPa at 9 sccm, and then decreased 32 GPa and 305 GPa at 12 sccm, respectively. A low and stable of friction coefficient was obtained for the Zr-Si-N films. Friction coefficient was about 0.1.     

由缺陷引起的Burstein-Moss和带隙收缩效应对CdIn2O4透明导电薄膜光带隙的影响

在Ar+O2气氛，采用射频反应溅射Cd In靶制备CdIn2O4（CIO）薄膜.通过对不同衬底 温度下制备和沉积后在氩气流中退火的薄膜进行透射、反射和Hall效应的测量和分析发现， 随着衬底温度的降低，载流子浓度呈上升趋势，而吸收边呈现先是“蓝移”然后“红移”的 现象.从理论上阐述了高浓度的点缺陷对CIO氧化物薄膜的能带产生的重要影响，这些影响主 要体现在带尾的形成，Burstein Moss(B M)漂移和带隙收缩.另外，衬底温度的变化将对 薄膜的迁移率有重要影响.对于CIO薄膜，由缺陷产生的空穴浓度将对薄膜的带隙收缩产生重 要影响并将直接影响到薄膜的光透性.由于存在吸收带尾，利用传统的“外推法”获得薄膜 的光带隙并不适合简并半导体，而应使用更为准确的“拟合法”. 关键词： 射频反应溅射 CdIn2O4透明导电薄膜 Burstein Moss漂移 带隙收缩 电学性 质 光学性质     

真空热退火温度对单相Ag2O薄膜微结构和光学性质的影响

利用直流磁控反应溅射技术在玻璃衬底上沉积了单相Ag₂O薄膜,并采用真空热退火对单相Ag₂O薄膜在不同热退火温度 (T _{A) 下进行了1 h热处理.利用X射线衍射谱、扫描电子显微镜和分光光度计研究了 T A对单相Ag2O薄膜微结构和光学性质的影响.研究结果表明, T}A= 300 ℃ 时Ag₂O薄膜中开始出现Ag纳米颗粒,且随着 T _{A的升高薄膜中Ag的含量 关键词： 2}O薄膜')" href="#">Ag₂O薄膜 热退火温度 微结构 光学性质     

GaxN2:Zn3-x薄膜的分子束外延生长及其光学和电子输运性能表征

本文采用分子束外延技术,通过对金属分子束的精确控制,在MgO(002)基底上成功生长了Ga_xN₂∶Zn_3-x合金薄膜.高分辨率单晶X光衍射仪表征结果表明Ga_xN₂∶Zn_3-x合金薄膜仍是以(400)Zn₃N₂为主导的复合晶体结构,对衍射数据的分析得到该薄膜晶粒尺寸小.用扫描电子显微镜和能谱射线分析仪对其表面和成分做了深入的分析和讨论,在固定的金属流量比的生长环境下,不同厚度的样品在成膜后x均为0.65,化学通式Zn_2.35Ga_0.65N₂.该结果表明Ga元素属于重度掺杂,同时也体现了分子束外延技术在共掺杂技术中的优越性.本文也测量并讨论了Zn_2.35Ga_0.65N₂薄膜的光学性能,实验得到的1.85 eV的光学带隙与理论推算基本吻合,说明Ga的掺入有Ga-N结构...     

Effect of substrate temperature on microstructure and optical properties of single-phased Ag2O film deposited by using radio-frequency reactive magnetron sputtering method

Using a radio-frequency reactive magnetron sputtering technique,a series of the single-phased Ag2O films are deposited in a mixture of oxygen and argon gas with a flow ratio of 2:3 by changing substrate temperature(T s).Effects of the T s on the microstructure and optical properties of the films are investigated by using X-ray diffractometry,scanning electron microscopy and spectrophotometry.The single-phased Ag2O films deposited at values of T s below 200℃ are(111) preferentially oriented,which may be due to the smallest free energy of the(111) crystalline face.The film crystallization becomes poor as the value of T s increases from 100℃ to 225℃.In particular,the Ag2O film deposited at T s = 225℃ loses the 111 preferential orientation.Correspondingly,the film surface morphology obviously evolves from a uniform and compact surface structure to a loose and gullied surface structure.With the increase of T s value,the transmissivity and the reflectivity of the films in the transparent region are gradually reduced,while the absorptivity gradually increases,which may be attributed to an evolution of the crystalline structure and the surface morphology of the films.     

Photoelectrochemical properties of texture‐controlled nanostructured α‐Fe2O3 thin films prepared by AACVD

Nanostructured α‐Fe₂O₃ thin film electrodes were deposited by aerosol‐assisted chemical vapour deposition (AACVD) for photoelectrochemical (PEC) water splitting on conducting glass substrates using 0.1 M methanolic solution of Fe(acac)₃. The XRD analysis confirmed that the films are highly crystalline α‐Fe₂O₃ and free from other iron oxide phases. The highly reproducible electrodes have an optical bandgap of ～2.15 eV and exhibit anodic photocurrent. The current–voltage characterization of the electrodes reveals that the photocurrent density strongly depended on the film morphology and deposition temperature. Scanning electron microscopy (SEM) analysis showed a change in the surface morphology with the change in deposition temperature. The films deposited at 450 °C have nanoporous structures which provide a maximum electrode/electrolyte interface. The maximum photocurrent density of 455 µA/cm² was achieved at 0.25 V vs. Ag/AgCl/3M KCl (～1.23 V vs. RHE) and the incident photon to electron conversion efficiency (IPCE) was 23.6% at 350 nm for the electrode deposited at 450 °C. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

水热法制备In2O3/ZnO异质结及其高的光催化性能

采用简单的两步水热法合成了不同In₂O₃质量比的In₂O₃/ZnO异质结复合材料．通过X射线衍射仪(XRD)、紫外-可见分光光度计(UV-vis)和扫描电子显微镜(SEM)对复合材料的结构、形貌和性能进行了表征．同时还使用UV-vis分光光度计测试了异质结降解罗丹明B(RhB)的光催化活性．实验结果表明,与纯ZnO和In₂O₃相比,In₂O₃的引入将ZnO的吸收光谱扩展到可见光区域,从而提高了其光生电子和空穴的分离．此外,In₂O₃/ZnO异质结在可见光照射对RhB具有较高的光催化活性．5 wt%-In₂O₃/ZnO异质结对RhB的降解率为84.3%,且具有良好的光催化稳定性．In₂O₃/ZnO异质结复合材料在有机染料废水的降解中有更广阔的应用前景．     

紫外Sc2O3薄膜的光学和结构性能表征及其激光作用下的损伤机理

利用电子束蒸发方法,在不同沉积温度 (50~350 ℃)下制备了Sc2O3薄膜。分别用分光光度计,小角掠入射X射线衍射仪和轮廓仪测试了薄膜样品的光谱、微结构和表面粗糙度信息,并用薄膜分析软件Essential Macleod计算了Sc2O3薄膜的折射率和消光系数。结果表明：随着沉积温度升高,Sc2O3薄膜结晶程度增强,晶粒尺寸增大,且较高的沉积温度有利于获得较高的折射率。最后用355 nm,8 ns的三倍频Nd:YAG激光器测试了其激光损伤阈值（LIDT）,最大值为2.6 J/cm2,且阈值与薄膜的消光系数、表面粗糙度、光学损耗均呈现相反的变化趋势。用光学显微镜和扫描电子显微镜表征了该薄膜的破坏形貌,详细分析了薄膜在不同激光能量作用下破坏的发展过程,以及Sc2O3薄膜在355 nm紫外激光作用下LIDT与制备工艺的关系,重点分析了355 nm激光作用下薄膜的破坏机理。     

Optical and gas sensing properties of thick TiO2 films grown by laser deposition

In this work the optical and the gas sensing properties of thick TiO₂ waveguide films, produced by pulsed laser deposition, were investigated by m-line spectroscopy. The films were deposited on (0 0 1) SiO₂ substrates at temperature of 100 °C. The thickness of the films was measured to be in the range from 650 to 1900 nm and the roughness increases from 5 to 14.6 nm. High quality mode spectra, consisted of thin and bright TE and TM modes, were observed in the films with thickness up to 1200 nm. All the films revealed anisotropic optical properties. Gas sensitivity of the films to CO₂ was examined at room temperature on the basis of the variations of the refractive index. CO₂ concentration of 3 × 10⁴ ppm was detected, which corresponds to a refractive index variation of about 1 × 10⁻⁴. The crystal structure and the optical transmittance of the films were also presented and discussed.     

Optical and electrical properties of Y2O3 thin films prepared by ion beam assisted deposition

Y₂O₃ thin films were deposited by ion beam assisted deposition (IBAD) and the effects of fabrication parameters such as substrate temperature and ion energy on the structure, optical and electrical properties of the films were investigated. The results show that the deposited Y₂O₃ films had less optical absorption, larger refractive index, and better film crystallinity with the increase of substrate temperature or ion energy. The as-deposited Y₂O₃ films without ion-beam bombardment had larger relative dielectric constant (?_r) and the ?_r decreased with time even over by 40%, while the ?_r of films prepared with high ion energy had less changes, only less than 3%. Also, with the increase of ion energy, the electrical breakdown strength and the figure of merit increased.     

n型透明导电薄膜CdIn2O4电学性质的研究和大面积制备的最佳条件

在Ar+O2₂气氛中，采用射频反应溅射Cd-In靶制备CdIn2₂O4₄ 薄膜.制得的薄膜经x射线衍射（XRD）检测为CdIn2₂O4₄和CdO相组成的多晶.从理论上分析了热 处理前后氧空位、掺杂点缺陷和富氧电子陷阱在影响膜的载流子浓度和电子散射中所起的重要作用.同时，对样品 进行Hall效应、Seebeck效应测试并得出不同载流子浓度下的迁移率、有效质量、弛豫时间以及它们之间的相互关系，特别强调     

Enhancement of magnetic and dielectric properties of low temperature sintered NiCuZn ferrite by Bi2O3-CuO additives

With a series of 1.0 wt%Bi$_{2}$O$_{3}$-$x$ wt% CuO ($x =0.0$, 0.2, 0.4, 0.6, and 0.8) serving as sintering additives, Ni$_{0.23}$Cu$_{0.32}$Zn$_{0.45}$Fe$_{2}$O$_{4}$ ferrites are successfully synthesized at a low temperature (900 $^\circ$C) by using the solid state reaction method. The effects of the additives on the phase formation, magnetic and dielectric properties as well as the structural and gyromagnetic properties are investigated. The x-ray diffraction (XRD) results indicate that the added Bi$_{2}$O$_{3}$-CuO can lower the synthesis temperature significantly without the appearing of the second phase. The scanning electron microscope (SEM) images confirm that Bi$_{2}$O$_{3}$ is an important factor that determines the sintering behaviors, while CuO affects the grain size and densification. With CuO content $x=0.4$ or 0.6, the sample shows high saturation magnetization, low coercivity, high real part of magnetic permeability, dielectric permittivity, and small ferromagnetic resonance linewidth ($\Delta H$). The NiCuZn ferrites are a promising new generation of high-performance microwave devices, such as phase shifters and isolators.