GaAs/GaAlAs双异质结发光管退化特性的研究

本文研究了GaAs/GaAlAs双异质结发光管的退化特性。有快、慢二种退化类型。器件的慢退化是由于有源区有暗缺陷(DSD)产生和长大,引起光功率下降。文中研究了老化过程中I-V特性和I-P特性与EL图象的变化规律,并与相同结构的InP/InGaAsP双异质结发光管的退化特性进行了比较,结果表明:它们有着不同的退化机理。     

Low-loss chalcogenide waveguides on lithium niobate for the mid-infrared

We demonstrate low-loss chalcogenide (As(2)S(3)) waveguides on a LiNbO(3) substrate for the mid-IR wavelength (4.8 μm). Designed for single-mode propagation, they are fabricated through photolithography and dry-etching technology and characterized on a mid-IR measurement setup with a quantum cascade laser. For straight waveguides, propagation loss as low as 0.33 dB/cm is measured and low-loss bends on the order of 100 μm are simulated, with measurement results showing <3 dB for a 250 μm bend radius. The coupling efficiency is estimated to be 81%. In addition, the influences of variations in width and bend radius are also investigated.     

Three-dimensional mid-infrared photonic circuits in chalcogenide glass

We report the fabrication of single-mode buried channel waveguides for the whole mid-IR transparency range of chalcogenide sulphide glasses (λ ≤ 11 μm), by means of direct laser writing. We have explored the potential of this technology by fabricating a prototype three-dimensional three-beam combiner for future application in stellar interferometry that delivers a monochromatic interference visibility of 99.89% at 10.6 μm and an ultrahigh bandwidth (3-11 μm) interference visibility of 21.3%. These results demonstrate that it is possible to harness the whole transparency range offered by chalcogenide glasses on a single on-chip instrument by means of direct laser writing, a finding that may be of key significance in future technologies such as astrophotonics and biochemical sensing.     

A monochromatic and frequency stabilized cw source in the 5 μm region obtained by doubling the frequencies of a cw laser in tellurium

In this paper we describe the construction of a monochromatic and frequency stabilized continuous wave (cw) source in the 5 μm region. It is built up by a cw single line, single-mode frequency and amplitude stabilized CO₂ laser. This primary CO₂ laser source is then frequency-doubled in a tellurium crystal using second harmonic generation (SHG). The obtained emission is monochromatic (half-width 50 kHz). The frequency can be varied discreetly from 4.6 μm to 5.5 μ depending on the CO₂ laser line chosen.     

On the elasticity of transverse isotropic soft tissues (L)

Quantitative elastography techniques have recently been developed to estimate the shear modulus μ of soft tissues in vivo. In the case of isotropic and quasi-incompressible media, the Young's modulus E is close to 3 μ, which is not true in transverse anisotropic tissues such as muscles. In this letter, the transverse isotropic model established for hexagonal crystals is revisited in the case of soft solids. Relationships between elastic constants and Young's moduli are derived and validated on experimental data found in the literature. It is shown that 3 μ(⊥) ≤ E(⊥) ≤ 4 μ(⊥) and that E(//) cannot only be determined from the measurements of μ(//) and μ(⊥).     

Synthesis and characterization of organic/inorganic heterostructure films for hybrid light emitting diode

Thin-film light emitting devices based on organic materials have been gathering attentions for applying a flat-panel display and a solid-state lighting. Alternatively, inorganic technologies such as Si-based thin-film technology have been growing almost independently. It is then expected that combining the Si-based thin-film technology with the organic light emitting diode (OLED) technology will develop innovative devices. Here, we report syntheses of the hybrid light emitting diode (LED) with a heterostructure consisting of p-type SiC_x and tris-(8-hydroxyquinoline) aluminum films and characterization for the hybrid LEDs. We present the energy diagram of the heterostructure, and describe that the use of high dark conductivities of the p-type SiC_x as well as inserting wide-gap intrinsic a-SiC_x at the p-type SiC_x/Alq interface are effective for improving device performance.     

Bottom-up approaches to microLEDs emitting red,green and blue light based on GaN nanowires and relaxed InGaN platelets

Miniaturization of light-emitting diodes (LEDs) with sizes down to a few micrometers has become a hot topic in both academia and industry due to their attractive applications on self-emissive displays for high-definition televisions, augmented/mixed realities and head-up displays, and also on optogenetics, high-speed light communication, etc. The conventional top-down technology uses dry etching to define the LED size, leading to damage to the LED side walls. Since sizes of microLEDs approach the carrier diffusion length, the damaged side walls play an important role, reducing microLED performance significantly from that of large area LEDs. In this paper, we review our efforts on realization of microLEDs by direct bottom-up growth, based on selective area metal-organic vapor phase epitaxy. The individual LEDs based on either GaN nanowires or InGaN platelets are smaller than 1 μ in our approach. Such nano-LEDs can be used as building blocks in arrays to assemble microLEDs with different sizes, avoiding the side wall damage by dry etching encountered for the top-down approach. The technology of InGaN platelets is especially interesting since InGaN quantum wells emitting red, green and blue light can be grown on such platelets with a low-level of strain by changing the indium content in the InGaN platelets. This technology is therefore very attractive for highly efficient microLEDs of three primary colors for displays.     

Infrared (2–12 μm) solid-state laser sources: a review

The infrared domain is very attractive for many applications owing to two unique features: (i) it contains several atmospheric transparency windows, (ii) it corresponds to the ‘molecular fingerprint’ region of the electromagnetic spectrum where various molecules have strong rovibrational absorption lines. In many cases, these applications (e.g. laser surgery, trace gas monitoring, remote sensing, nonlinear spectroscopy, countermeasures, …) require coherent light radiation as the one emitted by a laser source. In this context, the choice of the proper technology is a key issue. Depending on the selected application, it could be required the source to deliver tunable emission, narrow linewidth, nearly diffraction limited beam, pulsed or continuous-wave (CW) radiation, etc. This article briefly reviews the main technologies, restricted to CW and nanosecond pulsed sources emitting in the 2–12 μm range. The technologies considered include rare-earth and transition-metal doped bulk and fiber lasers, semiconductor lasers, and optical parametric sources. Pros and cons of these technologies are then briefly discussed in the context of several selected applications. To cite this article: A. Godard, C. R. Physique 8 (2007).     

Determining the imaging plane of a retinal capillary layer in adaptive optical imaging

Even in the early stage,endocrine metabolism disease may lead to micro aneurysms in retinal capillaries whose diameters are less than 10 μm.However,the fundus cameras used in clinic diagnosis can only obtain images of vessels larger than 20 μm in diameter.The human retina is a thin and multiple layer tissue,and the layer of capillaries less than10 μm in diameter only exists in the inner nuclear layer.The layer thickness of capillaries less than 10 μm in diameter is about 40 μm and the distance range to rodcone cell surface is tens of micrometers,which varies from person to person.Therefore,determining reasonable capillary layer(CL) position in different human eyes is very difficult.In this paper,we propose a method to determine the position of retinal CL based on the rodcone cell layer.The public positions of CL are recognized with 15 subjects from 40 to 59 years old,and the imaging planes of CL are calculated by the effective focal length of the human eye.High resolution retinal capillary imaging results obtained from 17 subjects with a liquid crystal adaptive optics system(LCAOS) validate our method.All of the subjects' CLs have public positions from 127 μm to 147 μm from the rodcone cell layer,which is influenced by the depth of focus.     

增强现实技术综述

增强现实技术是将计算机渲染生成的虚拟场景与真实世界中的场景无缝融合起来的一种技术,它通过视频显示设备将虚实融合的场景呈现给用户,使人们与计算机之间的交互更加的自然,同时具有广泛的应用前景,因此成为近年来的一个研究热点。随着跟踪注册技术的进步、计算机性能的飞速发展、深度摄像机的普及,以及Light Field投影技术在增强现实中的应用,增强现实技术逐渐成为下一代人机交互的发展方向。该文章首先概述了增强现实的主要研究内容和发展情况,并详细介绍了增强现实的关键技术、开发工具,然后分类概述了增强现实应用案例。     

有机电致蓝光器件激发YAG∶Ce荧光粉光谱特性研究

模拟无机大功率白光LED由蓝光芯片激发荧光粉形成白光的发光方式,基于有机电致蓝光器件激发黄色的YAG∶Ce荧光粉来实现全色器件.采用真空蒸镀法,制备了ITO/2T-NATA(30 nm)/AND ∶ TB-Pe(50 Wt％,40 nm)/Alq3 (100 nm)/LiF(1 nm)/Al(100 nm)的蓝光器件,...     

结温与热阻制约大功率LED发展

LED结温高低直接影响到LED出光效率、器件寿命、可靠性、发射波长等。保持LED结温往允许的范围内,是大功率LED芯片制备、器件封装和器件应用等每个环节都必须重点研究的关键因素,尤其是LED器件封装和器件应用设计必须着重解决的核心问题。首先介绍pn结结温对LED器什性能的影响,接着分析大功率LED结温与器件热阻的关系．基于对器件热阻的分析,得出了结温与热阻已经制约大功率LED进一步向更大功率发展的结论,并提出了如下两个观点：1．要在保持低成本和自然散热方式下提高LED器件的功率,根本的出路是提高光转换效率;2．在日前没有提高光转换效率的情况下,发展超过5W的大功率器件对工程应肘没有实质意义。     

同步辐射X射线光刻技术

同步辐射X射线光刻（SRXL）是本世纪超大规模集成电路（VLSI）发展中最有希望的深亚微米图形加工技术,本文综述了SRXL技术研究的现状及存在的问题,并对其今后的发展进行展望。     

ZnO-based deep-ultraviolet light-emitting devices

Deep-ultraviolet(DUV) light-emitting devices(LEDs) have a variety of potential applications.Zinc-oxide-based materials,which have wide bandgap and large exciton binding energy,have potential applications in high-performance DUV LEDs.To realize such optoelectronic devices,the modulation of the bandgap is required.This has been demonstrated by the developments of Mg_xZn_(1-x)O and Be_xZn_(1-x)O alloys for the larger bandgap materials.Many efforts have been made to obtain DUV LEDs,and promising successes have been achieved continuously.In this article,we review the recent progress of and problems encountered in the research of ZnO-based DUV LEDs.     

有源层受主浓度对InGaAsP/InP双异质结发光管特性的影响

本文研究了有源层受主浓度(Pa)对InGaAsP/InP双异质发光管特性的影响。有源层受主浓度Pa≈2×1017～1×1018cm-3的器件,具有较大的光输出功率P≥1mW;截止频率fĉ为30～80MHz,并且有正常的Ⅰ-Ⅴ特性。有源层浓度高于上述浓度的器件,光输出功率降低,并且具有异常的Ⅰ-Ⅴ特性。在器件光谱半宽△λ=(λ2/1.24)nkT关系式中,n值是有源层受主浓度(Pa)的函数。上述结果表明:有源层受主浓度(Pa)是影响器件特性的重要因素之一。     

双光路成像干涉定心系统设计

在光刻投影物镜镜片加工和装配时,为了满足磨边定心和装配定心阶段对镜片测量的量程、灵敏度和准确度不同的需求,本文提出了一种双光路准直成像复合干涉的定心方法,采用同一光路实现准直和干涉两种不同的测量方法,分别针对磨边定心和装配定心的测量需要.根据实际需要设计了测量系统的参量,根据该参量对系统的测量范围、灵敏度和准确度进行了理论分析.结果表明:该系统在准直测量阶段的测量范围从1μm到500μm,测量灵敏度最高为0.2％,测量准确度为1.02 μm;在干涉测量阶段的测量范围从0.01 μm到1.9 μm,测量灵敏度最低为0.1％,测量准确度达到0.2 μm,可以满足在磨边定心阶段大量程、低灵敏度、低准确度以及装配定心阶段小量程、高灵敏度、高准确度的定心要求.采用双光路成像干涉原理的定心系统满足了设计需求,可指导光刻投影物镜等高准确度物镜的生产和装调.     

双光路成像干涉定心系统设计

在光刻投影物镜镜片加工和装配时,为了满足磨边定心和装配定心阶段对镜片测量的量程、灵敏度和准确度不同的需求,本文提出了一种双光路准直成像复合干涉的定心方法,采用同一光路实现准直和干涉两种不同的测量方法,分别针对磨边定心和装配定心的测量需要.根据实际需要设计了测量系统的参量,根据该参量对系统的测量范围、灵敏度和准确度进行了理论分析.结果表明:该系统在准直测量阶段的测量范围从1μm到500μm,测量灵敏度最高为0.2%,测量准确度为1.02μm;在干涉测量阶段的测量范围从0.01μm到1.9μm,测量灵敏度最低为0.1%,测量准确度达到0.2μm,可以满足在磨边定心阶段大量程、低灵敏度、低准确度以及装配定心阶段小量程、高灵敏度、高准确度的定心要求.采用双光路成像干涉原理的定心系统满足了设计需求,可指导光刻投影物镜等高准确度物镜的生产和装调.     

A Design of Extreme Long Focal Depth Binary Optical Element

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High brightness 735 nm tapered lasers – optimisation of the laser geometry

High brightness tapered laser diodes with different resonator geometries were fabricated and analysed. The devices consist of an index-guided straight section and a gain-guided tapered section. Lasers with a total length L = 2 and 4 mm and different length of the ridge waveguide L _RW (500 μm ≤ L _RW ≤ 1250 μm for L = 2 mm and 500 μm ≤ L _RW ≤ 2000 μm for L = 4 mm) were processed to study the influence of the straight section on the spatial mode filtering. The power–voltage–current-characteristics, the beam waist, the far field, and the beam propagation factor M ² were measured. From the experiments, it can be stated that the lasers with a small L _RW reach higher output powers compared to those with larger L _RW. Concerning the beam quality the length L _RW should exceed a minimal value to guarantee efficient spatial mode filtering. Devices optimised concerning maximum output power and excellent beam quality reach a beam propagation factor smaller than 2.1 at an output power P = 2 W.     

1.3μmInGaAsP/InP发光管退化的研究

研究了InGaAsP/InP双异质结发光管在老化,存储过程中的退化现象及其影响因素.有快慢二种退化模式,正向I-V特性变坏是产生突然退化的最主要因素,焊料的润湿不良是导致器件退化的原因之一;在70℃,85℃老化及存储过程中,个别器件有源区内有DSD产生并长大,这并不是引起突然退化的原因.