Distribution of aluminum and indium impurities in crystals of Ge-Si solid solutions grown from the melt

The problem regarding the distribution of aluminum and indium impurities in bulk crystals of solid solutions with a variable composition Ge_1−x Si _x (0 ≤ x ≤ 0.3) is solved in order to establish regularities of the changes in the segregation coefficients of impurities with variations in the composition of the host lattice in the germanium-silicon system. Aluminum-and indium-doped crystals of Ge_1−x Si _x (0 ≤ x ≤ 0.3) solid solutions with a silicon content decreasing along the crystallization axis are grown by a modified Bridgman method with the use of a silicon seed. The concentration distribution of impurities over the length of the crystals is determined from Hall measurements. It is demonstrated that the experimental data on the concentration distribution of impurities in the crystals are in good agreement with the results obtained from the theory according to which the equilibrium segregation coefficients of impurities vary linearly with a change in the composition of Ge-Si solid solution crystals.

     

Multimode phonon structure of Be‐containing II ‐ VI mixed crystals determined by IR spectroscopic ellipsometry

Spectroscopic ellipsometry in the infrared spectral range 250‐5000 cm^‐1 is used for analysis of the dielectric response of Zn_1‐x‐yBe_xMg_ySe and Zn_1‐x‐yBe_xMn_ySe crystals grown by a high‐pressure Bridgman method. Ellipsometric spectra display features in the spectral range 390‐500 cm^‐1 associated with BeSe‐type phonon modes. In the optical spectra of Zn_1‐x‐yBe_xMg_ySe crystals both BeSe‐type and MgSe‐type lattice absorption bands are detected. The MgSe‐like modes are located at approximately 300 cm^‐1. The complex dielectric functions can be reproduced using a model with two or three and one or two classical damped oscillators corresponding to the BeSe‐like and the MgSe‐like transverse‐optical phonon modes, respectively. The frequencies of longitudinal‐optical phonons have been derived from the dielectric loss functions. A red‐shift of the BeSe‐like phonons frequencies with a mean rate 0.42 cm^‐1 (0.50 cm^‐1) per mole percent of Mg (Mn) incorporated to the alloy has been found for examined concentration range x, y ≤ 0.25. A noticeable damping the intensities of BeSe‐type modes with increasing fraction of Mg and Mn dopant is observed in comparison to the strengths of BeSe‐type modes in Zn_1‐xBe_xSe crystals. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

X-ray Topographic Assessment of Defects in Pure and Substituted Hexaferrite Crystals

Results of X-ray diffraction topography, in reflection and transmission scanning geometry, of flux grown single crystals of substituted and unsubstituted hexaferrites bearing composition SrGa_xIn_yFe_12-(x+y)O₁₉ (where x = 0, 5, 7, 9; y = 0, 0.8, 1.3, 1.0) are presented. Diffraction topographs reveal defects like misoriented grains, dislocations, cavities, inclusions, and the strain patterns in these crystals. The unsubstituted hexaferrites exhibit better perfection when compared to the substituted ones. The study is reported to support the results obtained by chemical etching and fractography, besides yielding additional information covering defects.     

Growth,structure, and superconducting properties of Bi2Sr2Ca2Cu3O10 and (Bi,Pb)2Sr2Ca2Cu3O10‐y crystals

Large and high‐quality single crystals of both Pb‐free and Pb‐doped high temperature superconducting compounds (Bi_1‐xPb_x)₂Sr₂Ca₂Cu₃O_10‐y (x = 0 and 0.3) were grown by means of a newly developed “Vapour‐Assisted Travelling Floating Zone” technique (VA‐TSFZ). This modified zone‐melting technique was realised in an image furnace and allowed for the first time to grow Pb‐doped crystals by compensating for the Pb losses occurring at high temperature. Crystals up to 3×2×0.1 mm³ were successfully grown. Post‐annealing under high pressure of O₂ (up to 10 MPa at T = 500°C) was undertaken to enhance T_c and improve the homogeneity of the crystals. Structural characterisation was performed by single‐crystal X‐ray diffraction (XRD) and the structure of the 3‐layer Bi‐based superconducting compound was refined for the first time. Structure refinement showed an incommensurate superlattice in the Pb‐free crystals. The space group is orthorhombic, A2aa, with cell parameters a = 27.105(4) Å, b = 5.4133(6) Å and c = 37.009(7) Å. Superconducting studies were carried out by A.C. and D.C. magnetic measurements. Very sharp superconducting transitions were obtained in both kinds of crystals (ΔT_c ≤ 1 K). In optimally doped Pb‐free crystals, critical temperatures up to 111 K were measured. Magnetic critical current densities of 2�10⁵ A/cm² were measured at T = 30 K and μ₀H = 0 T. A weak second peak in the magnetisation loops was observed in the temperature range 40‐50 K above which the vortex lattice becomes entangled. We have measured a portion of the irreversibility line (0.1‐5 Tesla) and fitted the expression for the melting of a vortex glass in a 2D fluctuation regime to the experimental data. Measurements of the lower critical field allowed to obtain the dependence of the penetration depth on temperature: the linear dependence of λ(T) for T < 30 K is consistent with d‐wave superconductivity in Bi‐2223. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth of R 1 − y Sr y F3 − y crystals with rare earth elements of the cerium subgroup (R = La, Ce, Pr, or Nd; 0 ≤ y ≤ 0.16) and the dependence of their density and optical characteristics on composition

Crystals of the R _{1 ? y} Sr _y F_{3 ? y} phases (R = La, Ce, Pr, or Nd; 0 ≤ y ≤ 0.16) with tysonite (LaF₃) structure are grown by the Bridgman method. A linear dependence of the crystal density on the SrF₂ concentration has been revealed for each series of solid solutions. A scheme of heterovalent isomorphous substitution in the tysonite structure, R ³⁺ + F^1? → M ²⁺ + V _F, with compensation of the difference in the cation charges due to the formation of anion vacancies, is confirmed experimentally. The optical transmission spectra are measured in the wavelength range λ = 2.18–22.22 μm. It is shown that the 50%-transmission edge in the IR range is 10.5 μm for all crystals. The refractive index and the polarizability of crystals decrease with decreasing SrF₂ content according to a linear law. The melting curves of the R _{1 ? y} Sr _y F_{3 ? y} phases studied have a maximum; therefore, these phases can be recommended for use as crystals with a high homogeneity and different optical properties in comparison with the corresponding RF₃ crystals.     

Distribution of Al and in impurities along homogeneous Ge-Si crystals grown by the Czochralski method using Si feeding rod

A distribution of Al and In impurities in Ge_{1 ? x} Si _x crystals (0 ≤ x ≤ 0.3) grown by a modified Czochralski method (with continuous feeding of melt using a Si rod) have been studied experimentally and theoretically. Experimental Al and In concentrations along homogeneous crystals have been determined from Hall measurements. The problem of Al and In impurity distribution in homogeneous Ge-Si single crystals grown in the same way is solved within the Pfann approximation. A set of dependences of Al and In concentrations on the crystal length obtained within this approximation demonstrates a good correspondence between the experimental and theoretical data.     

Growth and thermal studies on pure ADP,KDP and mixed K1‐x(NH4)xH2PO4 crystals

The investigations on the formation of mixed crystals of ammonium dihydrogen orthophosphate (ADP) and potassium dihydrogen orthophosphate (KDP) i.e. potassium ammonium dihydrogen phosphate, K_1‐x(NH₄)_xH₂PO₄ have been presented in this paper. Pure and mixed crystals of ADP and KDP have been grown by slow evaporation technique from the supersaturated solution at an ambient temperature 26±1 °C for ammonium concentration x in the range 0.0 ≤ x ≤ 1.0 in the case of mixed crystals. Crystal compositions were determined by flame atomic absorption spectroscopy and chemical analysis. The results of the X‐ray analysis of the grown crystals are also reported. Thermogravimetric analysis (TGA) and differential thermal analysis (DTA) were used to study the kinetic process of dehydration and the high temperature phase behaviour. DTA showed the distinct thermal events attributed to dehydration of ADP, KDP and K_1‐x(NH₄)_xH₂PO₄. The results of thermal analysis and chemical analysis are consistent with each other. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Coexistent Phases and their Electrical and Structural Behaviour in the Ternary Re/Mo/O System

In order to complete and improve phase diagrams of transition metal oxides the existence and properties of compounds in the Re/Mo/O system have been investigated. Single crystalline solid solutions Re_1-xMo_xO₂ (0 < x < 0.37) and Mo_1-yRe_yO₂ (0 < y < 0.42) were prepared by Solid State Reactions and Chemical Transport Reactions (CTR) and characterized by means of X-ray-diffraction, ICP-AES, and EPMA. In addition, it was shown that the trioxides Re_1-xMo_xO₃ or Mo_1-yRe_yO₃ respectively, do not prove a distinct solubility. First results on Re-doped Magneli phases of Mo are also discussed. There were found two series of solid solutions Mo_4-zRe_zO₁₁ (0 < z < 0.40) which derive from γ-Mo₄O₁₁ and η-Mo₄O₁₁. The other Magneli phases did not show a significant Re content. Using X-ray diffraction, AFM and optical microscopy the structure and morphology of single crystals has been studied. It was steated that the dioxide solid solutions were very homogeneous and structural phase transitions depending on x or y did not occur. That is in good agreement with measurements of electrical conductivity σ in the temperature range from 20 K to 300 K in which the samples showed the behaviour of metals with lattice defects. The Magneli phases Mo₈O₂₃ and Mo₉O₂₆ turned out to be “narrow gap semiconductors” in the low temperature range with activation energies of less than 0.1 eV. The γ-Mo₄ O_11- and γ-Mo₄O₁₁ crystals, the pure and Re-doped ones, were found as metallic conductors at higher temperatures and below a transition temperature they show a semiconductive behaviour.     

Effect of indium intercalation on various properties of MoSe2 single crystals

Indium intercalated MoSe₂ single crystals i.e. In_xMoSe₂ (0 ≤ x ≤ 1) are grown by direct vapour transport technique. These crystals are structurally characterized by X‐ray diffraction, by determining their lattice parameters ‘a’ and ‘c’ and X‐ray density. The Hall effect and thermoelectric power measurements shows that In_xMoSe₂ (0 ≤ x ≤ 1) are p‐type in nature. The direct and indirect band gap measurements are also undertaken on these semiconducting materials. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

The Phase Diagram of the Pb–Mo–S System at 1250 K and Some Properties of the Superconducting PbMo6S8

Pb_xMo₆S_y arises as the sole ternary compound in the System Pb–Mo–S. At 1250 K it is surrounded by 4 phase regions with 3 solid phases. It has a homogeneity range of between 0.9 ≤ x < 1.1 and 7.6 ≤ y > ≤ 7.9. T_c changes within the homogeneity range. Chemical transport is possible within a limited section of the phase diagram in the presence of lead halides.     

Growth and study of single crystals of Pb1 − x BaxSc0.5Nb0.5O3 solid solutions

Crystals of Pb_{1 ? x} Ba_xSc_0.5Nb_0.5O₃ solid solutions with 0 ≤ x ≤ 0.58 have been grown by the method of mass crystallization from flux. It is established that, unlike the concentration dependence of the corresponding ceramic, the concentration dependence of the temperature T _m (the maximum dielectric constant ε in crystals) does not attain saturation. Cooling of crystals with x ≤ 0.04 resulted in a spontaneous transition from the relaxor to the macrodomain ferroelectric state. In crystals with a higher barium content, the relaxor state is “locked in.”     

Optical Reflection Spectra of Silicon Clathrate Compounds Ba8AgxSi46−x

Abstract

Optical reflection spectra are measured for Ba₈Ag_xSi_46?x (0 ≤ x ≤ 6) at room temperature. A systematic decrease in the plasmon energy is found with increasing x, indicating that the carrier concentration decreases with increasing x. When x increases, the superconducting transition temperature T_c decreases. An origin of the decrease in T_c is assigned to the decrease in the density of states at the Fermi level due to the decrease in the carrier concentration.     

The Improvement of Superconductivity in PbxBi2-xSr2CaCu2Oy

In this paper we present the results of recent studies on the improvement of superconductivity in Pb_xBi_2-xSr₂CaCu₂O_y single crystals by preventing impurities incorporation, employing ZrO₂ crucible for crystal growth and post annealing the as-grown crystals in vacuum or argon. It is realized that the superconductivity of as-grown crystals is improved.     

The distribution of Ga and Sb impurities in Ge-Si crystals grown by the Bridgman method using a feeding rod

Gallium- and antimony-doped Ge_{1 ? x} Si _x crystals (0 ≤ x ≤ 0.25) have been grown by the improved Bridgman method using a silicon seed and a macrohomogeneous feeding Ge-Si rod of the corresponding composition. The impurity concentration profiles along the grown crystals were determined from Hall measurements. The mathematical problem of impurity distribution along two-component mixed crystals grown from a melt with uniform and graded composition is solved in the Pfann approximation and within the virtual-crystal model for the solid solution. It is shown that the experimental impurity distributions in Ge_{1 ? x} Si _x crystals are described well by the data calculated on the assumption of linear change in the impurity segregation coefficient with the crystal composition.     

Mechanism of formation of barium cuprate-based solid solutions with perovskite-like structure doped with cadmium and yttrium oxides

The influence of Y₂O₃ and CdO content on the phase composition, structure, and electrical properties of Y₂O₃-CdO-BaO-CuO ceramics was studied. The concentration limits of the existence of the orthorhombic perovskite-like Y_xBa_{2 ? x} Cd_yCu_{1 ? y} O_{3 + δ} solid solutions (where 0.20 ≤ x ≤ 0.37 and y ≤ 0.2) and their unit-cell parameters are determined.     

Homogenitätsuntersuchungen und Bestimmung der molaren Konzentration x an CdxHg1–xTe mit Hilfe der Elektronenstrahlmikrosonde

The semiconductor Cd_xHg_1–xTe serves as a starting material for the production of infrared detectors with a high detectivity and a small time constant. Cd_xHg_1–xTe single crystals are necessary to manufacture detectors efficiently. The single crystals should not contain segregations and have to include a homogeneous molar concentration x. An electron microprobe X-ray analyzer meets all requirements expected from the measuring method for checking the homogeneity of Cd_xHg_1–xTe crystals. — Results of qualitative and quantitative studies in the microscopical and macroscopical range are presented. Typical defects of the crystals were detected by using the qualitative electron microprobe X-ray analysis. The quantitative analysis was carried out with standard samples. The method for determination of the molar concentration x of the standard samples is described.     

Local lattice strains in the system of cubic Zn0.999Fe0.001S x Se1 − x (0 ≤ x ≤ 1) crystals

The structure of cubic Zn_0.999Fe_0.001S _x Se_{1 ? x} (0 ≤ x ≤ 1) crystals obtained by vapor-phase chemical transport has been investigated by thermal-neutron diffraction. The diffraction patterns of these crystals are found to exhibit previously unknown diffuse-scattering effects related to local static atomic displacements in the metastable fcc lattice. It is substantiated that the tendency to form polytypes, which is characteristic to a greater extent of zinc sulfide, can be a key factor of instability in the lattice of compounds belonging to the series of anion-substituted solid solutions under study.     

Growth of InAs1–ySby solid solutions for obtaining decreased lattice mismatch in the InAs-GaSb (AlxGa1–nSb) system

This paper presents the results of investigation of the technological conditions of LPE growth of InAs_1–ySb_y solid solutions on InAs substrates. It is shown that the chosen regions of composition of InAs_1–ySb_y solid solutions and experimentally determined technological conditions allow the obtaining of InAs_1–ySb_y solid solutions with lattice parameter values close to those of the Al_xGa_1–xSb (0 ≦ x ≦ 0.2) solid solutions.     

Effect of Boron Doping in Bi-based 2223 Superconductors

Samples with the stoichiometric composition Bi_2−xPb_xSr₂Ca₂Cu_3−yB_yO_z (x = 0.3, y = 0.2, 0.25, 0.3, 0.4) ceramics were prepared by a solid state reaction method. The samples were annealed at 850 °C for 100 hours (treatment A), and the other at 850 °C for 200 hours (treatment B). From the X-ray diffraction data of a ceramic sample it is revealed that all the samples were mixed phases of 2212 and 2223. The variation of the lattice parameters with the dopant level are represented. From the D.C. four-probe electrical resistivity data it was found that for the samples subjected to treatment B the T_c(0) values were higher than those with treatment A. The A.C. susceptibility data were collected by change in the inductance method. The effect of boron doping on the phase formation and T_c(0) is presented and the volume fraction of the phases estimated from the X-ray data. The presence of boron in the samples was confirmed by the inductive coupled plasma method. The microstructure of the samples was studied by scanning electron microscopy.     

Lattice Parameter Study in the Bi1–xSbx Solid-solution System

The lattice parameters of Bi_1–xSb_x single crystals were measured for 0 ≦ x ≦ 1 by a special X-ray diffractometer technique using reflections chosen so that minimum errors were achieved. Corrections for thermal expansion and refraction were applied. The antimony concentration was determined by means of electron microprobe analysis. The dependences of the lattice parameters on x (in nm) can be described with good approximation by a = 0.45469 – 0.02398x and c = 1.186294 – 0.058632 [1 + 1.26 (x⁻¹ – 1)]⁻¹, resp. The behaviour of the parameter a is in agreement with the earlier study by CUCKA and BARRETT , whereas their linear expression for c(x) (0 ≦ x ≦ 0.3) was not confirmed.