低场磁共振系统的低噪声前置放大器研究设计

噪声前置放大器是磁共振射频接收子系统中的重要组件,它的性能优劣直接决定了最终磁共振图像的好坏.目前市场上的低噪声前置放大器大多基于中高场磁共振系统开发,而针对低场磁共振系统的很少;另外,商用低场磁共振系统的低噪声前置放大器价格相对较贵,并且多采用两级放大结构,结构复杂、调试难度大、成本相对较高.在此背景下,针对0.5 T低场磁共振设备利用Keysight公司的先进设计系统（ADS）软件对低噪声前置放大器进行研究设计,采用一级放大结构,探索电路设计与布局对放大器性能的影响.实测结果表明自主设计的低噪声前置放大器在21 MHz共振频率附近噪声系数为0.5 dB左右,增益达到了30 dB,能够满足低场磁共振应用的要求.     

某型射频接收机高增益下变频组件研制

介绍了一种X波段带镜像抑制混频器的下变频组件的设计,增益40dB,带内增益平坦度+1dB,功率1dB压缩点10dBm;介绍了射频放大器,衰减器,中频放大器的工作方式,电路实现方法及装配调试结果,均满足设计要求。     

近红外S-C-L超宽波带低噪声PbS量子点掺杂光纤放大器

实现了基于PbS量子点掺杂的近红外S-C-L超宽带低噪声光纤放大器(QDFA)。以紫外(UV)固化胶为光纤纤芯本底,以PbS量子点作为增益介质,由973nm单模激光器、隔离器、波分复用器、量子点掺杂光纤等构成全光路结构,在1470~1620nm的宽波带区间实现了对信号光的放大。结果表明:在1550nm波长附近,QDFA的带宽为75nm。当输入信号光功率为-23dBm时,开关增益为16dB~19dB(净增益为12.26dB~15.26dB),噪声系数约为3dB。实验观测到了较明显的激励阈值和增益饱和现象,确定了适用的量子点掺杂浓度与光纤长度之间的线性关系。所实现的QDFA的带宽、C波带增益平坦度、噪声系数等指标优于常规的掺铒光纤放大器(EDFAs),L波带增益平坦度略低于经优化的多光纤EDFAs。     

基于水冷磁体的超高场核磁共振波谱仪前置放大器系统设计与实现

基于水冷电磁体的超高场核磁共振实验的需求,提出了一种适用于该类核磁共振波谱仪的前置放大器系统的设计方案并予以实现.该系统包括前置放大器控制器、高带前置放大器、高带混频器、宽带前置放大器以及宽带混频器,实现了通道之间的自由切换、发射与接收的快速切换以及较大的接收动态范围、较低的噪声系数.     

某型双频接收机混频中放组件的研制

介绍了S、X波段带数字控制衰减器的混频中放单元设计方法,带内增益平坦度≤±0.5dB,功率输出1dB压缩点≥15dBm;介绍了放大器增益的分配思路、数控衰减器的工作原理、电路的实现方法及电路制版后装配调试和测试结果,满足设计要求。     

增益平坦拉曼放大器优化算法研究

在分析受激拉曼散射耦合方程的基础上,介绍了一种反向设计多波长抽运光纤拉曼放大器的方法,并使用一种改进遗传算法和新型打靶法,讨论了体现特定的高增益和宽带平坦的适应度函数,对抽运波长和功率进行了优化,得到高增益,宽带平坦的增益谱,其开关增益可达15dB,增益带宽达80nm,增益波动小于1dB,这种放大器结构比现有的宽带光纤放大器在增益平坦上有一定的进步。     

具有陷波电路结构的P波段低温低噪声放大器

该文的工作是设计和制作了一种具有陷波电路结构的P波段低温低噪声放大器。在低温75K环境下,工作频段为250-350MHz的范围内,该低温低噪声放大器具有优异的性能,噪声系数小于0.4dB,增益为14.4dB,增益平坦度小于0.05dB,输入反射损耗S11<-20dB,输出反射损耗S22<-20dB。同时在工作频段外的高温超导滤波器寄生通带内,该低温低噪声放大器成功实现了传输陷波响应,加强了系统对前端高温超导滤波器产生的寄生通带的衰减和抑制。     

某型接收机后级放大器的设计

介绍了后级放大器的设计方法,放大器要求在1GHz带宽内增益平坦度≤±0.3dB,功率输出1dB压缩点≥8dBm.文中介绍应用ADS软件进行了电路设计和仿真,电路制版后装配调试.测试结果和仿真进行比较,指标满足设计要求.     

两路输入前置光放大星间微波光子链路优化

考虑到星间微波光子链路传输损耗大且多路微波信号之间交调干扰严重,利用前置光放大来提高链路的信号噪声失真比RSNDR。建立了两路输入前置光放大星间微波光子链路模型,推导出了RSNDR的解析表达式。通过优化马赫-曾德尔调制器的直流偏置相移,使得在给定输入射频信号功率条件下RSNDR最大,并进一步分析了前置光放大器参数对最优直流偏置相移和RSNDR的影响。仿真结果表明,前置光放大改变了影响RSNDR的主要因素,使信号放大的倍数大于噪声和三阶交调(IM3)放大的倍数,从而提高了链路的RSNDR。当前置光放大器增益为20dB、噪声系数为3dB时,最优的RSNDR比不加前置光放大器时提高24dB。前置光放大器增益和噪声系数对最优的RSNDR影响很大,而对最优的直流偏置相移几乎无影响。     

C波段宽频带低温低噪声放大器的设计与测量

本文介绍了C波段宽频带低温低噪声放大器的研制.放大器采用的是Avago一款赝高电子迁移率晶体管,用不对称十字型结微带线的输入匹配网络进行宽频带的匹配,采用源极微带线负反馈和输出端串联电阻来提高稳定性.本文介绍的宽频带低温低噪声放大器工作频段为5~6.5GHz,在常温下测量增益为30.7±1dB,输入输出反射损耗均小于-10dB,噪声系数小于1.6dB.在4K的条件下测试,调整放大器的偏置电压后,其增益能达到34.3±1.3dB.     

Noise figure characterization of preamplifiers at NMR frequencies

A method for characterizing the noise figure of preamplifiers at NMR frequencies is presented. The noise figure of preamplifiers as used for NMR and MRI detection varies with source impedance and with the operating frequency. Therefore, to characterize a preamplifier's noise behavior, it is necessary to perform noise measurements at the targeted frequency while varying the source impedance with high accuracy. At high radiofrequencies, such impedance variation is typically achieved with transmission-line tuners, which however are not available for the relatively low range of typical NMR frequencies. To solve this issue, this work describes an alternative approach that relies on lumped-element circuits for impedance manipulation. It is shown that, using a fixed-impedance noise source and suitable ENR correction, this approach permits noise figure characterization for NMR and MRI purposes. The method is demonstrated for two preamplifiers, a generic BF998 MOSFET module and an MRI-dedicated, integrated preamplifier, which were both studied at 128MHz, i.e., at the Larmor frequency of protons at 3 Tesla. Variations in noise figure of 0.01dB or less over repeated measurements reflect high precision even for small noise figures in the order of 0.4dB. For validation, large sets of measured noise figure values are shown to be consistent with the general noise-parameter model of linear two-ports. Finally, the measured noise characteristics of the superior preamplifier are illustrated by SNR measurements in MRI data.     

High gain double-pass L-band EDFA with dispersion compensation as feedback loop

We demonstrate an efficient double-pass L-band erbium-doped fiber amplifier (EDFA) incorporating chirped fiber Bragg grating (CFBG). The amplifier structure exploits the characteristics of CFBG to reflect the amplified signal back into the gain medium, filter out the recycled forward amplified spontaneous emission and block the residual 1480 nm pump power. The amplifier configuration has high gain and low noise figures as compared to double-pass EDFA using broadband mirror. The demonstrated amplifier has gain of more than 48 dB and low noise figure of less than 4 dB at low input signal power of −40 dBm.     

高场磁共振成像1H/31P双调谐射频线圈研究进展

在众多可产生磁共振现象的原子核中,¹H核凭借其在生物体中含量高、磁共振信号强的优势,成为磁共振成像的主要研究对象．但其它杂核在生命科学相关研究中同样具有不可替代的独特性,如³¹P核广泛参与了生物体内的能量代谢过程,是非质子成像研究领域的重要内容．MRI向更高场强的发展使得杂核成像逐渐普及,其核心部件是高质量的¹H/³¹P双调谐射频线圈．本文总结了与¹H/³¹P双调谐射频线圈相关的研究与应用,展示了9.4 T下小鼠脑的质子磁共振成像及磁共振磷谱,并讨论了高场¹H/³¹P双调谐射频线圈的潜在应用价值．     

一种新型低噪声大动态范围小型前端电路的研制

设计了一款小型化、低噪声、大动态范围的前端处理电路,包括电荷灵敏前放、成形放大电路、单道脉冲幅度分析电路。前放的等效输入噪声≤1.5 keV,动态范围可达0~11 V,积分非线性 ≤0.11%。该电路为模块化电路,当前放与主放模块构成系统时,其分辨可以达到0.12%。当前放、主放模块与中国科学院近代物理研究所制作的离子注入型硅探测器构成系统时,采用239Pu 源进行测试,测得在5.157 MeV时的能量分辨约为0.82%;当主放、单道脉冲幅度分析模块与中国科学院近代物理研究所制作的碘化铯晶体探测器构成系统时,采用60Co 源进行测试,对于能量为1.332 MeV 的 射线,测得其能量分辨约为7.9%。该电路可用于半导体探测器、光电倍增管及电子倍增器等探测器信号的处理。目前,小型前端电路已经应用于中国科学院近代物理研究所自行研制的便携式盐湖卤水铀、钍、钾快速测量仪的原型样机,达到了预期效果。A small dimension front-end circuit with low noise and wide output dynamic range is introduced in this paper. The front-end circuit is made up of a charge sensitive preamplifier, a shaping circuit and a single channel pulse height analyzer. The equivalent input noise is under 1.5 keV. The output integral nonlinearity is less than 0.11% within the dynamic range of 011 V. And the circuit can be suitable for different conditions by different modules. The resolution was about 0.12% with the charge sensitive preamplifier and the main amplifier. The energy resolution of 0.82% was achieved for 5.157 MeV -rays from a 239Pu source with the charge sensitive preamplifier, the main amplifier and anion-injection silicon detector designed by the Institute of Modern Physics(IMP). An energy resolution of 7.9% was achieved for 1.332 MeV rays from a stationary 60Co source with the main amplifier, the single channel pulse height analyzer and a CsI scintillator detector designed by the IMP. The front-end circuit has the features of wide output dynamic range, simple structure, high level of integration,small dimensions, low noise, fast rise time of the output pulse and excellent stability. The front-end circuit can be applied to signal processing of semiconductor detectors, photomultiplier tubes and electrons multiplier. And the front-end circuit had been applied to a prototype of the portable rapid measuring instrument designed by IMP for measuring Uranium, Thorium and Potassium in the salt lake brine with goodtest result.     

Optimization of an Externally Modulated RF Photonic Link

The noise figure and sub-octave spurious-free dynamic range of a carrier-suppressed analog RF photonic link are examined. Expressions for noise figure and dynamic range are derived as a function of the modulator bias angle. A closed form expression for the bias angle that optimizes link noise figure and spurious-free dynamic range is also derived. Experimental results are presented and shown to agree with calculations. These experimental results include some of the lowest noise figure and highest dynamic range results published to date for an RF photonic link incorporating a standard Mach-Zehnder modulator: 6 dB and 122 dB·Hz^2/3, respectively.     

场效应器件低温特性与低噪声放大器

高温超导滤波器与低噪声放大器(LNA)组成的射频接收机前端设备具有高选择性、高灵敏度和极低的噪声,因而展现出广阔的应用前景.本文研究了场效应器件的低温物理特性和电学参数,研制了一种适用于高温超导微波接收系统的低温低噪声放大器,在60K工作温度下,具有很好的噪声特性.包括高电子迁移率场效应晶体管在内的元件参数均在60K温度下进行了实际测量.放大器的各项指标与设计值吻合,工作频段为800MHz～850MHz,增益大于18dB,输入输出驻波比小于1.2,噪声系数小于0.22dB.