共查询到19条相似文献,搜索用时 125 毫秒
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用PECVD薄膜沉积方法,成功地制备了磷掺杂纳米硅(nc-Si:H(P))薄膜.用扫描隧道电镜(STM)、Raman散射、傅里叶变换红外吸收(FTIR)谱、电子自旋共振(ESR)、共振核反应(RNR)技术对掺磷纳米硅进行了结构分析,确认了样品的微结构为纳米相结构.掺磷后膜中纳米晶粒的平均尺寸d减小,一般在25—45nm之间,且排列更加有序.掺磷nc-Si:H膜具有较高的光吸收系数,光学带隙在173—178eV之间,和本征nc-Si:H相同.掺杂nc-Si:H薄膜电导率在10-1关键词: 相似文献
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邹江 《原子与分子物理学报》2020,37(4)
采用基于密度泛函理论的第一性原理计算方法,对未掺杂及La掺杂4H-SiC的电子结构和光学性质进行理论计算。计算结果表明,未掺杂4C-SiC其禁带宽度为2.257 eV。La掺杂后带隙宽度下降为1.1143eV,导带最低点为G点,价带最高点为F点,是P型间接半导体。掺杂La原子在价带的低能区间贡献比较大,而对价带的高能区和导带的贡献比较小。未掺杂4H-SiC在光子能量为6.25 eV时,出现一个介电峰,这是由于价带电子向导带电子跃迁产生。而La掺杂后,出现3个介电峰,分别对应的光子能量为0.47eV、2.67eV、6.21eV,前两个介电峰是由于价带电子向杂质能级跃迁产生,第三个介电峰是由于价带电子向导带电子跃迁产生。La掺杂后4H-SiC变成负介电半导体材料。未掺杂4h-SiC的静态介电常数为2.01,La掺杂的静态常数为12.01。 相似文献
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系统研究了磷离子注入并在不同温度退火后的纳米金刚石薄膜的微结构和电学性能.研究表明,当退火温度达到800 ℃以上时,薄膜呈良好的n型电导.Raman光谱和电子顺磁共振谱的结果表明,薄膜中金刚石相含量越高和完整性越好,薄膜电阻率越低. 这说明纳米金刚石晶粒为薄膜提供了电导.1000 ℃退火后,薄膜晶界中的非晶石墨相有序度提高,碳悬键数量降低,薄膜电阻率升高.薄膜导电机理为磷离子注入的纳米金刚石晶粒提供了n型电导,非晶碳晶界为其电导提供了传输路径.
关键词:
纳米金刚石薄膜
n型
磷离子注入 相似文献
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纳米晶TiO2薄膜在光电变色器件中具有很重要的作用。它的微结构直接影响染料的吸附、光的散射以及电荷输运的特性。因此,探索TiO2薄膜的微结构(如粒径、表面形貌和厚度等)及光电性能是非常有意义的。采用电子束蒸发工艺制备了光电变色器件用纳晶TiO2薄膜,利用原子力显微镜、X射线衍射、俄歇电子能谱等手段对纳米晶TiO2薄膜的表面形貌、结晶状态及组分进行了分析。从理论上研究和讨论了纳米晶TiO2薄膜晶粒尺寸对光电性能的影响,并用量子限制效应解释了吸收光谱峰值波长随粒径减小而发生蓝移的现象。 相似文献
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纳米ZnO薄膜的光致发光性质 总被引:9,自引:5,他引:9
利用溶胶-凝胶法制备了纳米ZnO薄膜,室温下测量了样品的光致发光谱(PL)、吸收谱(ABS)、X射线衍射谱(XRD).X射线衍射(XRD)的结果表明:纳米ZnO薄膜呈多晶状态,具有六角纤锌矿晶体结构和良好的C轴取向.观察到二个荧光发射带,中心波长分别位于395 nm的紫带、524 nm的绿带和450 nm附近的蓝带.证实了纳米ZnO薄膜绿光可见发射带来自氧空位(VO)形成的浅施主能级和锌空位(VZn)形成的浅受主能级之间的复合;450 nm附近的蓝带来自电子从VO的浅施主能级到价带顶或锌填隙(Zni) 到价带顶或导带底到VZn的浅受主能级的复合. 相似文献
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以M oS2粉末为原料,以氩气为携载气体,在400~600℃温度范围内利用热蒸发方法在硅衬底表面制备了不同厚度的M oS2薄膜.利用X射线衍射和扫描电子显微镜分析了M oS2薄膜的结构和表面形貌,发现M oS2薄膜由多晶M oS2粒子组成,颗粒均匀,平均纳米颗粒尺寸约为60 nm .利用紫外可见光光谱仪测量了其吸收特性,发现样品在720 nm附近有很强的吸收.应用霍尔效应和伏安法研究了M oS2/Si样品的接触特性和电子的运输特性,发现该异质结具有良好的整流特性,即正向电压下电流随电压呈指数增长,而在反向偏压下漏电流很小,电子迁移率可达到6.730×102 cm2/(V · s).实验结果表明MoS2薄膜具有良好的电学特性,可用来制备晶体管和集成电路等器件. 相似文献
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Influences of annealing on structural and compositional properties of Al_2O_3 thin films grown on 4H–SiC by atomic layer deposition 下载免费PDF全文
Annealing effects on structural and compositional performances of Al_2O_3 thin films on 4H–Si C substrates are studied comprehensively. The Al_2O_3 films are grown by atomic layer deposition through using trimethylaluminum and H_2 O as precursors at 300?C, and annealed at various temperatures in ambient N_2 for 1 min. The Al_2O_3 film transits from amorphous phase to crystalline phase as annealing temperature increases from 750?C to 768?C. The refractive index increases with annealing temperature rising, which indicates that densification occurs during annealing. The densification and grain formation of the film upon annealing are due to crystallization which is relative with second-nearest-neighbor coordination variation according to the x-ray photoelectron spectroscopy(XPS). Although the binding energies of Al 2p and O 1s increase together during crystallization, separations between Al 2p and O 1s are identical between as-deposited and annealed sample, which suggests that the nearest-neighbour coordination is similar. 相似文献
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P. Saravanan S.V. KamatB. Sreedhar 《Journal of magnetism and magnetic materials》2012,324(6):1201-1204
In this study, we investigated the microstructure, phase evolution and magnetic properties of nanogranular films of Sm-Co compounds processed by the sol-gel method. By controlling the compositional ratio of Sm:Co precursor concentration, nanogranular films consisting of three distinct hard magnetic phases namely, Sm2Co7, SmCo5 and Sm2Co17 with coercivity values of 1.78, 2.94 and 2.12 kOe, respectively, were obtained through this technique. 相似文献
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利用射频等离子体化学气象沉积法(r.f.PECVD),在12μm厚的聚对苯二甲酸乙二醇酯 (PET)上制备了碳氢膜. 用原子力显微镜(AFM),x射线光电子能谱(XPS),激光拉曼光谱,傅里叶红外光谱等仪器,对碳氢膜的表面形貌和内部结构特性进行了较详细研究. 镀碳氢膜PET的阻隔性能在标准透水蒸气测试仪上进行检测. 实验结果证明:沉积工艺参数对碳氢膜的生长速率及结构性能有重要影响;在PET上沉积的是纳米碳氢膜,该膜主要由sp2和sp3杂化的碳氢化合物组成;当PET上碳氢膜厚度为900nm时,阻水蒸气性能可提高7倍.
关键词:
碳氢膜
射频等离子体化学气象沉积法
聚对苯二甲酸乙二醇酯
阻隔性能 相似文献
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Zhihao Yue Honglie ShenHong Cai Hongjie LvBin Liu 《Physica B: Condensed Matter》2012,407(12):2278-2281
In this paper, epitaxial silicon films were grown on annealed double layer porous silicon by LPCVD. The evolvement of the double layer porous silicon before and after thermal annealing was investigated by scanning electron microscope. X-ray diffraction and Raman spectroscopy were used to investigate the structural properties of the epitaxial silicon thin films grown at different temperature and different pressure. The results show that the surface of the low-porosity layer becomes smooth and there are just few silicon-bridges connecting the porous layer and the substrate wafer. The qualities of the epitaxial silicon thin films become better along with increasing deposition temperature. All of the Raman peaks of silicon films with different deposition pressure are situated at 521 cm−1 under the deposition temperature of 1100 °C, and the Raman intensity of the silicon film deposited at 100 Pa is much closer to that of the monocrystalline silicon wafer. The epitaxial silicon films are all (4 0 0)-oriented and (4 0 0) peak of silicon film deposited at 100 Pa is more symmetric. 相似文献
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Kang Hyon Ri Yunbo Wang Wen Li ZhouJun Xiong Gao Xiao Jing WangJun Yu 《Applied Surface Science》2011,258(4):1283-1289
In this study, the structural and electrical properties of AZO films with different film thickness deposited by r.f. magnetron sputtering were interpreted in relation with film growth process. The result shows that the grain size increases during film growth, which is accompanied by decrease of compressive stress, indicating the enhancement of crystallinity. The relationship between grain size and compressive stress follows the same tendency for the samples regardless of deposition temperature, which implies the strong dependencies between the grain size and the compressive stress. The XPS analysis shows that the defects such as chemisorbed oxygen and segregated Al2O3 cluster at grain boundary are reduced with increase of film thickness or deposition temperature, leading to increase of carrier concentration and mobility. The mobility increase is accompanied by grain size increase and compressive stress reduction, indicating the influences of grain boundary and crystallinity on the mobility. 相似文献
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Organic-inorganic hybrid-polymer thin films were deposited on silicon(1 0 0) substrates at room temperature by PECVD (plasma enhanced chemical vapor deposition). Ethylcyclohexane and TEOS (tetraethoxysilane) were utilized as organic and inorganic precursors with hydrogen gas for the ethylcyclohexane bubbler and argon gas for both the TEOS bubbler and as a carrier gas. To compare the electrical and the mechanical properties of the plasma polymerized thin films, we grew the hybrid-polymer thin films under conditions of various TEOS bubbling ratios. MTS nano-indenter was used to measure the hardness and Young's modulus and showed that these values increased as the TEOS bubbling ratio increased, with the highest hardness at 0.8 GPa in this experiment. An impedance analyzer was utilized for the measurements of I-V curves and capacitance, showing the lowest dielectric constant at approximately 1.83, with a leakage current density of 10−8 A/cm2 at 1 MV/cm, respectively. 相似文献
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We have studied the band structure and optical properties of 4H-SiC by using a full potential linearized augmented plane waves (FPLAPW) method. The density of states (DOS) and band structure are presented. The imaginary part of the dielectric function has been obtained directly from the band structure calculation. With band gap correction, the real part of the dielectric function has been derived from the imaginary part by the Kramers-Kronig (KK) dispersion relationship. The values of reflectivity for normal incidence as a function of photon energy have also been calculated. We found the theoretical results are in good agreement with the experimental data. 相似文献
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A.T. Raghavender Nguyen Hoa Hong Chulkwon Park Myung-Hwa Jung Kyu Joon Lee Daesu Lee 《Journal of magnetism and magnetic materials》2012
The effect of annealing conditions on structural and magnetic properties of copper ferrite thin films on (100) Si substrates was examined in detail. After deposition, the ferrite thin films were post-annealed in vacuum and in oxygen atmosphere for several hours. It is found that the crystal structure of CuFe2O4 thin films changed drastically depending on different heating process. A maximum magnetization was achieved in the film that was vacuum annealed and it decreased remarkably after oxygen annealing. 相似文献