ZnSe—ZnTe应变层超晶格的光吸收研究

在室温下测量了Znse-ZnTe应变层超晶格的光吸收谱,观测到对应于第一轻重空穴跃迁的吸收台阶.根据测量所得的超晶格带隙确定了ZnSe-ZnTe的价带不连续为1.10eV.     

ZnS-ZnSe应变层超晶格的纵声学声子折叠模

本文报道室温下ZnS-ZnSe应变层超晶格的纵声学声子折叠模的喇曼光谱测量,在10～90cm~(-1)范围内得到三级双峰结构。     

三元合金缺陷层对有限超晶格中局域界面光学声子模的影响

在宏观介电连续近似下，采用转移距阵方法，研究了三元合金缺陷层对有限超晶格中局域界面光学声子模的影响.在这种有限超晶格结构中，可以清楚地看到所有界面模的演化轨迹.结果表明：存在两类局域模，它们的宏观静电势波函数分别局域在缺陷层和表面层附近，且这些模随着超晶格组分层和缺陷层的相对厚度和介电常数的改变，其局域位置和特性发生显著变化.此外，发现虽然能隙中局域模的数目不守恒，但所有界面模的总数守恒.     

ZnSe-ZnTe应变层超晶格远红外反射谱

本文首次报道室温下测量的分子束外延生长的ZnSe-ZnTe应变层超晶格的远红外反射谱.得到了ZnSe、ZnTe横光学声子摸.用长波长超晶格介电理论和多层吸收薄膜理论进行曲线拟合,确定Ⅱ-Ⅵ族ZnS、eZnTe材料的一些基本材料参数,如横光学声子频率、模衰减常数、模振荡强度、高频介电常数等.本文首次报道这些参数.     

ZnSe—ZnS应变层超晶格的激子吸收谱

在16K至室温范围内测量了ZnSe-ZnS应变层超晶格的激子吸收谱.观测到对应于1E-1HH1E-1LH及1E-3HH跃迁的三个激子吸收峰.     

ZnSe－ZnS应变超晶格光学振动模的研究

本文给出了ＣａＡｓ衬底上生长的ＺｎＳｅ－ＺｎＳ应变超晶格的室温Ｒａｍａｎ分析，观测了该超晶格中ＺｎＳｅ子层和ＺｎＳ子层的纵光学振动模（ＬＯ），首次发现在一些样品中ＺｎＳｅ子层的纵光学声子模ＬＯＺｎＳ出现红移，另一些样品中ＬＯＺｎＳｅ出现蓝移，而ＺｎＳ子层的ＬＯＺｎＳ总是向低波数方向移动，并利用限制效应和应变效应给出了解释。     

有限宽度的ZnSe/ZnTe应变超晶格中LA声子的拉曼频移(英文)

考虑到真实超晶格系统的有限宽度会造成晶格的非周期性 ,我们修正了用来决定拉曼频移峰值位置的公式中的倒格矢一项。在线性驰豫应变假设下给出了应变超晶格纵向原子间距的几何模型。在上述理论基础上计算了有限宽度的ZnSe/ZnTe应变超晶格LA声子的拉曼频移。数值计算结果同现有实验结果作了比较 ,符合很好。     

Surface optical phonon modes in ternary aligned crystalline InGaN/GaN multi‐quantum‐well nanopillar arrays

The optical properties of focused ion beam‐engraved, perfectly aligned and spatially controlled multi‐quantum‐well (MQW) InGaN/GaN nanopillars were investigated. Crystalline MQW nanopillars with a diameter of 30–95 nm and high aspect ratios (7:1–16:1) showed a maximum of three‐fold enhancement in emission intensity per unit active area. A light‐emitting contour map of Taiwan is drawn with a nanopillar structure to demonstrate the site control of the technique adopted in the present study. Raman scattering studies were used to characterize the newly created surfaces. Unknown peaks in GaN and InGaN nanostructures are identified for surface optical (SO) phonon modes with proper assignments of wave vectors using multiple excitations, and the SO mode for the ternary phase is reported for the first time. Copyright © 2009 John Wiley & Sons, Ltd.     

纤锌矿氮化物量子阱中光学声子模的三元混晶效应

本文先比较了几种常用方法(修正的无规元素等位移模型、虚晶近似和简化相干势近似等)对纤锌矿三元混晶体声子频率的拟合结果,再选用与实验数据接近的拟合方法,结合介电连续和单轴晶体模型导出含纤锌矿三元混晶In_xGa_1－xN和Al_xGa_1－xN单量子阱各类光学声子模的色散关系,进一步分析了声子模随组分的变化. 结果表明,修正的无规元素等位移模型对单模性纤锌矿     

Evolution of the 128-cm-1 Raman phonon mode with temperature in Ba(Fe1-xCox)2As 2 (x = 0.065 and 0.2)

We report electronic Raman scattering measurements on Ba(Fei_1-xCo_x)₂As₂（x = 0.065 and 0.2） single crystals with Raman shifts from 9 cm^-1 up to 600 cm^-1 in the symmetry of B_lg with respect to 1 Fe unit cell.When the crystals are cooled down,the evident quasielastic peaks of Raman spectra occur only in the crystal with x = 0.065,which is due to the contribution of orbital ordering between xz and yz Fe 3d orbitals,as we reported in another work.Here,we analyze the E_g phonon at 128 cm^-1,which has the same function form of its Raman tensors as those of xz and yz Fe 3d orbitals in these two crystals respectively.Unlike their electronic continuums,no anomalies are found in the E_g phonons of these two samples,which simply follows the expressions corresponding to the anharmonic phonon decay into acoustic phonons with the same frequencies and opposite momenta.Our results indicate that the structural and magnetic phase transition might be completely suppressed by chemical doping and there is not any indication of coupling between charge nematicity and E_g phonon mode from our experimental results,which is consistent with the results in our previous work.     

Observation of low‐wavenumber out‐of‐plane optical phonon in few‐layer graphene

Few‐layer graphene grown by chemical vapor deposition has been studied by Raman and ultrafast laser spectroscopy. A low‐wavenumber Raman peak of ~120 cm⁻¹ and a phonon‐induced oscillation in the kinetic curve of electron–phonon relaxation process have been observed, respectively. The Raman peak is assigned to the low‐wavenumber out‐of‐plane optical mode in the few‐layer graphene. The phonon band shows an asymmetric shape, a consequence of so‐called Breit‐Wigner‐Fano resonance, resulting from the coupling between the low‐wavenumber phonon and electron transitions. The obtained oscillation wavenumber from the kinetic curve is consistent with the detected low‐wavenumber phonon by Raman scattering. The origin of this oscillation is attributed to the generation of coherent phonons and their interactions with photoinduced electrons. Copyright © 2012 John Wiley & Sons, Ltd.     

One‐phonon resonant electron Raman scattering in a cylindrical GaAs/AlAs quantum dot

We have presented a theoretical calculation of the differential cross section for the electron Raman scattering process associated with the interface optical phonon modes in cylindrical GaAs quantum dots (QDs) with a AlAs matrix. We consider the Fröhlich electron–phonon interaction in the framework of the dielectric continuum approach. The selection rules for the processes are studied. Singularities are found to be sensitively size‐dependent, and, by varying the size of the QDs, it is possible to control the frequency shift in the Raman spectra. A discussion of the phonon behavior for QDs with different size is presented. Copyright © 2013 John Wiley & Sons, Ltd.     

Soft modes and phonon interactions in studied by neutron scattering

The low frequency lattice dynamics and its relationship to the second order paraelectric-to-ferroelectric transition in Sn₂P₂S₆ is studied. The dispersion branches of the acoustic and lowest lying optical phonons in the a^*-c^* plane have been obtained in the ferroelectric phase, for x-polarized phonons. Close to the phase transition a considerable softening is found for the lowest optical mode (P_x), comparable to the behaviour observed in previous Raman investigations. As found previously in Sn₂P₂Se₆, a strong coupling between the TO(P_x) and TA(u_xz) phonons is observed, although, apparently, not strong enough to lead to an incommensurate phase. The soft TO(P_x) mode at the zone center is observed. The temperature dependence of its frequency and damping shows that the transition is not entirely displacive. At low temperatures an unusual apparent negative LO-TO splitting is observed which is shown to arise from the coupling of the x-polarized soft mode to the nearby z-polarized optical phonon. For comparison, the soft TO(P_x) dispersion in the a^*-b^* plane is measured in both the paraelectric and ferroelectric phases. Consistent frequency changes and LO-TO splitting are observed, revealing a significant interaction between the TA(u_yx) and LA(u_xx) acoustics branches and the TO and LO soft optic branches, respectively. In contrast, the nearby y-polarized optic branch shows almost no temperature dependence. Finally, the influence of piezoelectric effects on the limiting acoustic slopes in the ferroelectric phase is discussed. Received: 11 May 1998 / Revised and Accepted: 15 June 1998     

Surface optical Raman modes in GaN nanoribbons

Raman scattering studies were performed in GaN nanoribbons grown along [1 0 0]. These samples were prepared inside Na‐4 mica nanochannels by the ion‐exchange technique and subsequent annealing in NH₃ ambient. Detailed morphological and structural studies including the crystalline orientation were performed by analyzing the vibrational properties in these GaN nanoribbons. Pressure in the embedded structure was calculated from the blue shift of the E₂(high) phonon mode of GaN. Possible red shift of optical phonon modes due to the quantum confinement is also discussed. In addition to the optical phonons allowed by symmetry, two additional Raman peaks were also observed at ∼633 and 678 cm⁻¹ for these nanoribbons. Calculations for the wavenumbers of the surface optical (SO) phonon modes in GaN in Na‐4 mica yielded values close to those of the new Raman modes. The SO phonon modes were calculated in the slab (applicable to belt‐like nanoribbon) mode, as the wavenumber and intensity of these modes depend on the size and the shape of the nanostructures. The effect of surface‐modulation‐assisted electron–SO phonon scattering is suggested to be responsible for the pronounced appearance of SO phonon modes. A scaling factor is also estimated for the interacting surface potential influencing the observed SO Raman scattering intensities. Copyright © 2010 John Wiley & Sons, Ltd.     

AAO模板法制备CdS纳米微粒的SERS光谱研究

在自制的孔径约15nm多孔氧化铝模板上沉积银纳米粒子,然后用电化学方法在此衬底上沉积CdS纳米微粒。研究了CdS纳米阵列在457.5nm波长激光激发下的表面增强拉曼散射(SERS)性质。实验结果显示CdS的SERS信号有三个振动模式,分别对应1LO、2LO和3LO纵光学声子模,它们的强度随着作为SERS衬底的银纳米粒子高度的增加而增强,当银纳米粒子的长/径比(长度与直径的比值)达到4时,这种增强趋近饱和。最后对CdS纳米微粒光学声子模的增强机理进行了分析和讨论。