Ti:sapphire planar waveguide laser grown by pulsed laser deposition

We document the lasing performance of a waveguiding layer of Ti:sapphire, of ~12-mum thickness, grown by pulsed laser deposition from a 0.12-wt.% Ti(2)O(3) Ti:sapphire single-crystal target onto an undoped z-cut sapphire substrate. Lasing around 800 nm is observed when the waveguide layer is pumped by an argon-ion laser running on all-blue-green lines, with an absorbed power threshold of 0.56 W, with high-reflectivity (R>98%) mirrors. With a 5% pump duty cycle and a T=35% output coupler, a slope efficiency of 26% with respect to absorbed power is obtained, giving quasi-cw output powers in excess of 350 mW.     

Wavelength swept Ti:sapphire laser

In this study, we demonstrate, for the first time to our knowledge, electronic wavelength sweeping of a continuous wave Ti:sapphire laser using an acousto-optic tunable filter (AOTF). The dependence of the laser output on the sweeping frequency and on the spectral tuning range was investigated. The lasing up to maximum scan rate 11 kHz for 10 nm tuning range and 5 W pump power was achieved. We detected and quantified asymmetry in the output for opposite scan directions. We theoretically characterized the maximum sweeping frequency for swept lasers with AOTFs and confirmed calculated results by measurements.     

Broadband spectral shaping in a Ti:sapphire regenerative amplifier

A birefringent crystal quartz plate of known thickness has been used as a spectral filter for spectral shaping in a Ti:sapphire regenerative amplifier. The spectral profile of the amplified pulse ejected from the regenerative amplifier was observed while adjusting the birefringent crystal plate in the cavity. By altering the gain spectrum, the bandwidth of the regeneratively amplified pulse was increased from 18 to 35 nm by using a 0.34-mm thick birefringent plate. The output pulse spectrum from the regenerative amplifier neared the bandwidth of the seed pulse. As a comparison, we used a coated filter outside the regenerative amplifier cavity, and the bandwidth of the regeneratively amplified pulse was stretched to 28 nm. When the bandwidth was stretched to 35 nm, the pulse was compressed to 35 fs.     

All-solid-state narrow-linewidth 455-nm blue laser based on Ti:sapphire crystal

A compact, all-solid-state, narrow-linewidth, pulsed 455-nm blue laser based on Ti：sapphire crystal is developed. Pumped by a 10-Hz, frequency-doubled all-solid-state Nd：YAG laser and injection-seeded by an external cavity laser diode, the narrow-linewidth 910-nm laser with pulse width of 20 ns is obtained from a Ti：sapphire laser. 3.43-mJ blue laser can be obtained from the laser system by frequency-doubling with BBO crystal. This research is very useful to determine the roadmap of developing the practical, high power blue laser. This kind of laser will have potential application for underwater communication.     

Characterization of frequency-tripled nanosecond pulsed Ti:sapphire laser injection seeded by a frequency-scanning cw Ti:sapphire laser by use of optogalvanic spectroscopy of silicon atoms

The performance of a narrow-linewidth nanosecond pulsed deep-UV coherent light source consisting of a frequency-tripled nanosecond pulsed Ti:sapphire laser injection seeded by a frequency-scanning cw Ti:sapphire laser has been characterized by using optogalvanic spectroscopy of silicon atoms as a diagnostic. The envelope of the optogalvanic spectrum indicates the pure Doppler broadening of silicon atoms, which was estimated to be as broad as 4 GHz, without the broadening effect from the laser linewidth itself.     

Self-starting Ti:sapphire holographic laser oscillator

We demonstrate, for the first time to our knowledge, operation of a holographic laser oscillator that uses laser-pumped Ti:sapphire (Ti(3+) : Al(2)O(3)) as the gain medium. The device is self-starting and self-adaptive by virtue of spontaneous gain-grating formation. We present experimental results of the system that include gain-switched pulses of 25-60-ns duration in a TEM(00) mode and as much as 11 mJ of output energy from a plane output coupler and 47 mJ from an intracavity polarizer port.     

Extreme events in the Ti:sapphire laser

We report experimental and theoretical evidence of the existence of extreme value events in the form of scarce and randomly emerging giant pulses in the femtosecond (self-pulsing or Kerr-lens mode-locked) Ti:sapphire laser. This laser displays complex dynamical behavior, including deterministic chaos, in two different regimes. The extreme value pulses are observed in the chaotic state of only one of these two regimes. The observations agree with the predictions of a well-tested theoretical model that does not include noise or self-Q-switching into its framework. This implies that, in this laser, the extreme effects have a nontrivial dynamical origin. The Ti:sapphire laser is hence revealed as a new and convenient system for the study of these effects.     

SILEX-I: 300-TW Ti:sapphire laser

Based on chirped pulse amplification technology, we have built a Ti:sapphire laser system, called SILEX-I (superintense laser for experiments on extremes), at CAEP, which consists of three stages with 5-, 30-, and 300-TW outputs, respectively. The first and the second stages work at 10 Hz, while the third works at single shot. Pulse durations of 30 fs have been obtained by installing an acousto-optic programmable dispersive filter (AOPDF) to compensate for the spectral gain narrowing in the regen. By taking a number of advanced measures for spatial beam control, such as spatial beam shaping, relay-imaged propagation, precise alignment of compressor gratings, and OAP, near-diffraction limited focal spots (FWHM) have been obtained. Focused intensities are calculated at (1–3) × 10²⁰ W/cm² with an f/2.2 OAP.SILEX-I has shown an excellent stability and reliability in operations for applications since its completion and will soon be able to operate at 500 TW.     

Anatase TiO2 films fabricated by pulsed laser deposition using Ti target

TiO₂ films were prepared by pulsed laser deposition using a metallic Ti target in an O₂ gas ambient. The microstructure along with optical and photocatalytic properties of the deposited films were systematically studied by changing the deposition parameters and substrates. It was found that TiO₂ films having nearly pure anatase phase grew effectively in O₂ atmosphere. When the films were fabricated at a substrate temperature of 400°C, their phase structures were greatly affected by the O₂ gas pressure, and nearly pure anatase phase with typical (101) and (004) peaks can be obtained under an O₂ pressure of 15 Pa. For the deposition at 700°C, the crystal structure of the TiO₂ films exhibited a strong anatase (004) peak and was inert to the oxygen pressures. Two modes, namely a substrate-temperature-controlled mode and an oxygen-pressure-controlled mode, were considered for the growth of the anatase TiO₂ films under different substrate temperatures. In addition, the optical and photocatalytic properties were found to be sensitive to both the microstructure and grain size of the TiO₂ films.     

闪光灯泵浦钛宝石可调谐激光器

为了提高灯泵钛宝石激光器的输出能量和效率，对灯泵钛宝石激光器进行了大量的试验研究工作。对国产氙灯进行了快速放电和寿命试验；测得了在不同放电电流密度情况下的氙灯发光光谱分布；试验采用双灯串接泵浦，双棱镜色散光学谐振腔，平平腔型，调谐范围为７５０～９５０ｎｍ，在中心波长８００ｎｍ处得到激光输出能量为８９３ｍＪ，电光转换效率为０．８９％。该激光器的阈值约为１５Ｊ。     

Amplification of femtosecond laser filaments in Ti:sapphire

Femtosecond laser filamentation is studied in a broadband amplifying medium, sapphire doped with electronically excited Ti ions. Evidence for fluence amplification of self-guided pulses, increase of filamentation length, as well as a lowering of the input laser power necessary for filamentation is reported.     

灯泵钛宝石激光器调Q运转

论述了色散棱镜谐振腔调Q运转方法。其中棱镜既起到波长调谐色散元件的作用 ,又起到Q开关起偏器的作用 ,省掉了制作难度大的宽带起偏器。为了使晶体高压随波长调谐同步运转 ,采用了单片机控制全反射镜驱动电源 ,同时也控制调Q电压 ,使全反射镜的转动与施加在晶体上的高压同步运行 ,达到了宽带调谐与调Q电压同步运转的目的 ,获得了波长调谐巨脉冲激光。实验中应用精确数字退压延迟技术和晶压与波长调谐同步运转方法 ,获得了激光脉宽 31ns、能量 2 70mJ的结果     

Tunable ultraviolet intracavity tripled Ti:sapphire laser

We present what we believe to be the first intracavity tripled Ti:sapphire laser. This source is tunable in the 275-285-nm range and will be useful for applications in the detection of important atmospheric species such as OH and NO radicals. Single-frequency operation and high optical yield (>50%) are obtained in this system after it has been injected by a laser diode.     

脉冲准分子激光淀积薄膜的实验研究

利用两种脉宽 (30ns,5 0 0fs)的KrF准分子激光展开了淀积类金刚石薄膜的实验研究 ,并且成功地制备了大面积不含氢成分的HF DLC薄膜 ,运用时空分辨的等离子体发射光谱诊断系统和离子探针系统研究了等离子体特性对薄膜性能的影响。尝试了利用准分子激光制备非晶硅薄膜 ,研究了实验参数对非晶硅薄膜制备的影响 ,并分析了制备具有良好电学和光学性能的非晶硅薄膜的条件     

SrHf0.67Ti0.33O3 high-k films deposited on Si by pulsed laser deposition

Abstract: The large band gap (3.58?eV) and dielectric properties (?? _r =50) of bulk SrHf_0.67Ti_0.33O₃ (SHTO) make it a promising high-k material. SHTO films were deposited on p-type (100) Si single crystal substrates by pulsed laser deposition. The composition, structure, thickness, and roughness of the SHTO films have been studied using X-ray Photoelectron Spectroscopy, X-ray reflectivity, transmission electron microscopy, and atomic force microscopy. The capacitance?Cvoltage and leakage current density characteristics of the films have been evaluated. For a post-annealed SHTO film with a thickness of 25 nm, the relatively high permittivity of 35 was achieved with the low leakage current density of 4.96×10^?4?A/cm² at ?2?V bias voltage.     

Deposition of Ti:sapphire thin films by reactive pulsed laser ablation using liquid metals and oxygen

Ti:sapphire films were grown using molten Al-Ti alloy ablation targets with either O₂ gas pulses or O₂ background reactive medium on sapphire (0001) substrates. The films were characterized by the use of XRD, RHEED, AFM, and XPS. While the films deposited at a substrate temperature of 650 °C showed three-dimensional epitaxial growth, the films deposited at 1000 °C exhibited a two-dimensional structure. Annealing of the low-temperature deposited films improved the crystal quality but failed to improve the surface morphology. Ti exists in the host sapphire lattice in the form of Ti³⁺ for films deposited at lower temperatures, whereas it assumes the tetravalent form in the high-temperature deposited films. The valence states of Ti identified by XPS studies are in agreement with low-temperature luminescence results.     

Widely tunable fourth harmonic generation of a Ti:sapphire laser based on RBBF crystal

Fourth harmonic generation of a tunable Ti:sapphire laser with a repetition rate of 80?MHz and pulse duration ??150 fs has been realized in a single pass with an RbBe₂BO₃F₂ crystal for the first time. A high average power was obtained which was tunable throughout a wide range from 180 to 232.5?nm. The output power over the whole range exceeded 2?mW, the highest being 43.3?mW at 202.5?nm. Moreover, deep-ultraviolet output with powers above 75?mW was obtained at 193.5 and 200?nm under a stronger focusing condition. This is the first attempt at the generation of tunable deep-ultraviolet light without using a KBBF crystal, which is very difficult to grow due to its strong layering tendency, and our attempt may provide new opportunities for the development of all-solid-state deep-ultraviolet coherent light sources.     

飞秒钛宝石激光脉冲的载波包络相移测量研究

飞秒激光脉冲的载波包络相移测量与控制是实现阿秒脉冲与光学原子钟的重要内容，在利用光子晶体光纤扩展飞秒钛宝石激光振荡器光谱的研究基础上，通过自参考技术测量并优化了该激光输出脉冲的载波包络相移所引起的拍频信号.实验上采用半导体抽运的倍频Nd:YVO4532nm激光器作为抽运源，对钛宝石激光器所产生的平均功率500mW、脉宽18fs的光脉冲进行拍频测量后观察到约23MHz的频移，对应于每周期053π的载波包络相移.飞秒激光脉冲载波包络相移测量的实现对于进一步利用电子反馈系统精确控制载波包络相移，从而得到高稳定的飞秒激光频率梳具有重要意义. 关键词： 载波包络相移 光子晶体光纤 飞秒 超连续