Quantitative Model for the Surface-related Electron Transfer in CdS Quantum Dots

The influence of surface S2- dangling bonds and surface doped ions(Se2-, Cu2+, and Hg2+) on the photo-luminescence of Cd2+-rich CdS QDs was investigated. A quantitative model was proposed to understand the complex transfer processes of excited electrons in CdS QDs. The transfer of excited electrons from either the conduction band or the Cd2+-related trap-state to the surface S2+-related shallow hole trap-state is effective. However, the trap of excited electrons by surface doped ion trap-states from the Cd2+-related trap-state is more effective than that from the conduction band. The efficiency of trapping electrons from both the conduction band and the Cd2+-related trap-state can be quantitatively understood with the help of the proposed model. The results show that the transfer efficiency of excited electrons is dependent on the location of the energy-level of the relevant surface-related trap-state. The trap of excited electrons by the surface trap-state with energy-level closer to that of the conduction band is more effective, especially for the trap of excited electrons from Cd2+-related trap-state.     

Bright and compact alloyed quantum dots with broadly tunable near-infrared absorption and fluorescence spectra through mercury cation exchange

We report a new strategy based on mercury cation exchange in nonpolar solvents to prepare bright and compact alloyed quantum dots (QDs) (Hg(x)Cd(1-x)E, where E = Te, Se, or S) with equalized particle size and broadly tunable absorption and fluorescence emission in the near-infrared. The main rationale is that cubic CdE and HgE have nearly identical lattice constants but very different band gap energies and electron/hole masses. Thus, replacement of Cd(2+) by Hg(2+) in CdTe nanocrystals does not change the particle size, but it greatly alters the band gap energy. After capping with a multilayer shell and solubilization with a multidentate ligand, this class of cation-exchanged QDs are compact (6.5 nm nanocrystal size and 10 nm hydrodynamic diameter) and very bright (60-80% quantum yield), with narrow and symmetric fluorescence spectra tunable across the wavelength range from 700 to 1150 nm.     

Synthesis of Cysteine-Capped Zn(x)Cd(1)(-)(x)Se alloyed quantum dots emitting in the blue-green spectral range

Alloyed ZnxCd1-xSe quantum dots (QDs) have been successfully prepared at low temperatures by reacting a mixture of Cd(ClO4)2 and Zn(ClO4)2 with NaHSe using cysteine as a surface-stabilizing agent. The photoluminescence (PL) spectra of the alloyed QDs are determined on the basis of the Zn2+/Cd2+ molar ratio, reaction pH, intrinsic Zn2+and Cd2+ reactivities toward NaHSe, concentration of NaHSe, and the kind of thiols. A systematic blue shift in emission wavelength of the alloyed QDs was found with the increase in the Zn mole fraction. This result provides clear evidence of the formation of ZnxCd1-xSe QDs by the simultaneous reaction of Zn2+ and Cd2+ with NaHSe, rather than the formation of separate CdSe and ZnSe nanocrystals or core-shell structure CdSe/ZnSe nanocrystals. The size and inner structure of these QDs are also corroborated by using high-resolution transmission electron microscopy and X-ray powder diffraction. To further understand the formation mechanism, the growth kinetics of Zn0.99Cd0.01Se was studied by measuring the PL spectra at different growth intervals. The results demonstrated that, in the initial stage of growth, Zn0.99Cd0.01Se has a structure with a Cd-rich core and a Zn-rich shell. The post-preparative irradiation of these QDs improved their PL properties, resulting in stronger emission.     

Sb2S3纳米粒子修饰ZnO纳米片微纳分级结构的光电化学性能

采用恒电位方法,选择氯化钾和乙二胺(EDA)为添加剂,在氧化铟锡(ITO)导电玻璃上制备了高度有序的ZnO纳米片阵列,通过二次电沉积得到了ZnO纳米片上生长纳米棒的微纳分级结构.利用化学浴沉积法在ZnO基底上沉积Sb₂S₃纳米粒子制备出了Sb₂S₃/ZnO纳米片壳核结构和Sb₂S₃/ZnO微纳分级壳核结构.利用扫描电子显微镜(SEM)、X射线衍射(XRD)、紫外-可见(UV-Vis)吸收光谱、瞬态光电流等对其形貌、结构组成和光电化学性能进行了表征和分析.结果表明, Sb₂S₃/ZnO纳米片上生长纳米棒分级壳核结构的光电流明显高于Sb₂S₃/ZnO纳米片壳核结构.在Sb₂S₃/ZnO纳米片壳核结构和Sb₂S₃/ZnO微纳分级壳核结构的基础上旋涂一层P3HT薄膜形成P3HT/Sb₂S₃/ZnO复合结构,以上述复合结构薄膜为光活性层组装成杂化太阳电池,其中, P3HT/Sb₂S₃/ZnO分级壳核结构杂化太阳电池的能量转换效率最高,达到了0.81%.     

Electrochemically Determining Electronic Structure of ZnO Quantum Dots with Different Surface Ligands

The electronic structure of quantum dots (QDs) including band edges and possible trap states is an important physical property for optoelectronic applications. The reliable determination of the energy levels of QDs remains a big challenge. Herein we employ cyclic voltammetry (CV) to determine the energy levels of three types of ZnO QDs with different surface ligands. Coupled with spectroscopic techniques, it is found that the onset potential of the first reductive wave is likely related to the conduction band edges while the first oxidative wave originates from the trap states. The determined specific energy levels in CV further demonstrates that the ZnO QDs without surface ligands mainly have oxygen interstitial defects whilst the ZnO QDs covered with ligands contain oxygen vacancies. The present electrochemical method offers a powerful and effective way to determine the energy levels of wide bandgap ZnO QDs, which will boost their device performance.     

Anionic and cationic substitution in ZnO

In this contribution we review the impact of anionic and cationic substitutions on the electronic properties of bulk ZnO crystals, thin films and ZnO powders. p-type doping is discussed with focus on the anionic substitution of oxygen by nitrogen or phosphorous. n-type doping is exemplarily reviewed for substitution of Zn by group III elements. The impact of isoelectronic substitution of zinc (with Cd or Mg) or of oxygen (with S, Se, Te) on the band gap are also discussed for the respective ternary alloy. The substitution of Zn by the transition metal Mn introduces several electronic levels in the band gap which significantly alter the absorption and emission properties. Further, devices based on substitutional effects in ZnO are reviewed: Schottky diodes (unipolar device) and pn-diodes (bipolar device).     

Two-step colloidal synthesis of micron-scale Bi2O2Se nanosheets and their electrostatic assembly for thin-film photodetectors with fast response

Recently discovered bismuth oxychalcogenide (Bi₂O₂Se) has aroused great interest due to its ultrahigh carrier mobility, tunable band gap and good environmental stability, making it a promising candidate for high-performance electronics and optoelectronics. Their synthesis by colloidal approaches represents a cost-effective alternative to well-established chemical vapor deposition methods, and the resulting electronic-grade inks are important for large-area printed or wearable electronics. However, it is still challenging to control the colloidal growth of Bi₂O₂Se nanosheets in solution in addition to their assembly into high-performance thin films. Here, we report a two-step colloidal synthesis of Bi₂O₂Se nanosheets by separating the seeding and growth steps, thereby achieving controllable production of nanosheets with a lateral size of 1.4 μm and a thickness of 10 nm at optimized reaction conditions. These Bi₂O₂Se nanosheets are electrostatically assembled into large-area thin films, from which a photodetector is fabricated with a responsivity of 6.1 A/W and a short response time of 368 μs under the 520-nm laser illumination. The device exhibits fast response to modulations as high as 100 kHz, along with a −3 dB bandwidth of 1 kHz. This work provides an important understanding of the controlled colloidal synthesis of Bi₂O₂Se nanosheets, and demonstrates their potential applications in fast photodetectors.     

Nanoscale connectivity in a TiO2/CdSe quantum dots/functionalized graphene oxide nanosheets/Au nanoparticles composite for enhanced photoelectrochemical solar cell performance

Electron transfer dynamics in a photoactive coating made of CdSe quantum dots (QDs) and Au nanoparticles (NPs) tethered to a framework of ionic liquid functionalized graphene oxide (FGO) nanosheets and mesoporous titania (TiO(2)) was studied. High resolution transmission electron microscopy analyses on TiO(2)/CdSe/FGO/Au not only revealed the linker mediated binding of CdSe QDs with TiO(2) but also, surprisingly, revealed a nanoscale connectivity between CdSe QDs, Au NPs and TiO(2) with FGO nanosheets, achieved by a simple solution processing method. Time resolved fluorescence decay experiments coupled with the systematic quenching of CdSe emission by Au NPs or FGO nanosheets or by a combination of the latter two provide concrete evidences favoring the most likely pathway of ultrafast decay of excited CdSe in the composite to be a relay mechanism. A balance between energetics and kinetics of the system is realized by alignment of conduction band edges, whereby, CdSe QDs inject photogenerated electrons into the conduction band of TiO(2), from where, electrons are promptly transferred to FGO nanosheets and then through Au NPs to the current collector. Conductive-atomic force microscopy also provided a direct correlation between the local nanostructure and the enhanced ability of composite to conduct electrons. Point contact I-V measurements and average photoconductivity results demonstrated the current distribution as well as the population of conducting domains to be uniform across the TiO(2)/CdSe/FGO/Au composite, thus validating the higher photocurrent generation. A six-fold enhancement in photocurrent and a 100 mV increment in photovoltage combined with an incident photon to current conversion efficiency of 27%, achieved in the composite, compared to the inferior performance of the TiO(2)/CdSe/Au composite imply that FGO nanosheets and Au NPs work in tandem to promote charge separation and furnish less impeded pathways for electron transfer and transport. Such a hierarchical rapid electron transfer model can be adapted to other nanostructures as well, as they can favorably impact photoelectrochemical performance.     

Composition-tunable Zn(x)Cd(1-x)Se nanocrystals with high luminescence and stability

High-quality Zn(x)Cd(1-x)Se nanocrystals have been successfully prepared at high temperature by incorporating stoichiometric amounts of Zn and Se into pre-prepared CdSe nanocrystals. With increasing Zn content, a composition-tunable emission across most of the visible spectrum has been demonstrated by a systematic blue-shift in emission wavelength. The photoluminescence (PL) properties for the obtained Zn(x)Cd(1-x)Se nanocrystals (PL efficiency of 70-85%, fwhm = 22-30 nm) are comparable to those for the best reported CdSe-based QDs. In particular, they also have good PL properties in the blue spectral range. Moreover, the alloy nanocrystals can retain their high luminescence (PL efficiency of over 40%) when dispersed in aqueous solutions and maintain a symmetric peak shape and spectral position under rigorous experimental conditions. A rapid alloying process was observed at a temperature higher than "alloying point". The mechanism of the high luminescence efficiency and stability of Zn(x)Cd(1-x)Se nanocrystals is explored.     

Biomimetic Synthesis of Ag2Se Quantum Dots with Enhanced Photothermal Properties and as “Gatekeepers” to Cap Mesoporous Silica Nanoparticles for Chemo–Photothermal Therapy

Ag₂Se quantum dots (QDs) with near‐infrared (NIR) fluorescence have been widely utilized in NIR fluorescence imaging in vivo because of their narrow bulk band gap and excellent biocompatibility. However, most of synthesis methods for Ag₂Se QDs are expensive and the reactants are toxic. Herein, a new protein‐templated biomimetic synthesis approach is proposed for the preparation of Ag₂Se QDs by employing bovine serum albumin (BSA) as a template and dispersant. The BSA‐templated Ag₂Se QDs (Ag₂Se@BSA QDs) showed NIR fluorescence with high fluorescence quantum yield (≈21.2 %), excellent biocompatibility and good dispersibility in different media. Moreover, the obtained Ag₂Se@BSA QDs exhibited remarkable photothermal conversion (≈27.8 %), which could be used in photothermal therapy. As a model application in biomedicine, the Ag₂Se@BSA QDs were used as “gatekeepers” to cap mesoporous silica nanoparticles (MSNs) by means of electrostatic interaction. By taking the advantages of NIR fluorescence and photothermal property of Ag₂Se@BSA QDs, the obtained MSN‐DOX‐Ag₂Se nanoparticles (MDA NPs) were employed as a nanoplatform for combined chemo‐photothermal therapy. Compared with free DOX and MDA NPs without NIR laser, the laser‐treated MDA NPs exhibited lower cell viability in vitro, implying that Ag₂Se@BSA QDs are highly promising photothermal agents and the MDA NPs are potential carriers for chemo–photothermal therapy.     

Flexible quantum dot sensitized solar cell by electrophoretic deposition of CdSe quantum dots on ZnO nanorods

We report on a flexible quantum dot-sensitized solar cell (QDSSC) based on ZnO nanorods with a length of 2 μm. Due to the good coverage of CdSe QDs on ZnO by the electrophoretic deposition method, a maximum power conversion efficiency of ～1% is achieved for the flexible QDSSC.     

Investigating the Mechanism by Which Intragap States Tailor Light Emission: Case of Copper Deficient and Zn Doped Cu−In−Se Quantum Dots**

The large structural tolerance of I–III–VI group quantum dots (QDs) to off-stoichiometry allows their photoluminescence properties to be adjusted via doping, thereby enabling application in different fields. However, the photophysical processes underlying their photoluminescence mechanism remain significantly unknown. In particular, the transition channels of CuInSe₂ QDs, which are altered by intrinsic and extrinsic intragap states, remain poorly reported. Herein, we investigated the photophysical processes associated with intragap states via electrochemical and optical techniques by using copper deficient Cu−In−Se QDs as well as Zn doped Cu−In−Se QDs. When the Cu/In molar ratios of Cu−In−Se QDs increased from 0.3 : 1 to 0.9 : 1, the photoluminescence spectra displayed a red-shift from 700 nm to 1050 nm. Although there was a blue-shift after the introduction of Zn²⁺ dopants in Cu−In−Se QDs, a significant red-shift occurred (from 660 nm to 760 nm) when the Zn/Cu molar ratios decreased from 0.7 : 0.3 to 0.3 : 0.7. The Gaussian deconvolution results of the photoluminescence spectra and the band gap derived from absorption spectra by fitting supported the fact that the optical transition channels are dependent on the Cu/In and Zn/Cu molar ratios. After the introduction of the Zn²⁺ ions, the alloyed-resultant blue-shift of the emission spectra was observed, primarily due to the enlarged band gap; however, the radiative recombination of prominent intrinsic intragap states is still observed; and only a small proportion of the band-edge exciton undergoes recombination for the sample with low Zn content. Cyclic voltammetry measurements revealed well-defined extrinsic Zn_Cu intragap states (Zn substitution on Cu sites) and intrinsic Cu^x (x= 1+/2+) states in the band gap. The results presented here provide a better understanding of the varying effects of dopant on photoluminescence in terms of I–III–VI group QDs.     

复合Ag/ZnO分级结构微球的制备及其光催化性能研究

采用化学沉淀法制备ZnO微球,利用柠檬酸三钠（TCD）避光还原硝酸银在ZnO表面沉积银粒子制备Ag/ZnO复合材料.利用XRD、SEM、TEM、EDS、FTIR、UV-vis DRS、PL、BET等对Ag/ZnO的结构、组分、形貌及光谱性质进行了表征,通过紫外及可见光照降解甲基橙溶液评价样品的光催化性能.结果表明：ZnO纳米微球是由ZnO纳米片相互交错构筑而成的具有丰富孔道的分级结构,Ag纳米粒子均匀沉积在ZnO纳米片上.Ag的沉积显著增加了ZnO的可见光吸收,猝灭了ZnO荧光,提高了ZnO催化活性.     

水稳定的镁掺杂ZnO量子点:一锅法合成及细胞成像应用

一锅法合成了镁掺杂的ZnO量子点,利用APTES对其进行表面包覆,并采用XRD、TEM、UV-Vis、PL和FTIR等对材料进行了表征。结果表明镁掺杂能明显增强荧光发光强度,在合适的掺杂浓度(30%)下其量子产率由11%增加到33%。通过APTES的表面包覆使镁掺杂的ZnO量子点具有良好的水溶性和荧光稳定性,可用于MCF-7细胞成像研究。     

ZnO纳米片组装的微球和层状集聚体的控制合成及其发光性质

通过锌片与水分别在乙二醇和乙二胺中120 ℃反应12 h,直接在锌片上原位合成出ZnO纳米片组装的微球和层状集聚体。利用X射线粉末衍射、扫描电子显微镜、透射电子显微镜和红外光谱对产物进行了表征和分析。结果表明,在乙二醇中得到的直径为0.3～2 µmZnO微球是由直径为30～50 nm纤锌矿结构的ZnO纳米片通过氢键组装而成;在乙二胺中得到的层状集聚体是由20～30 nm的纤锌矿结构的ZnO纳米片通过氢键组装成尺寸约为450×900 nm纳米片,这些较大尺寸纳米片再通过范德华力组装而成。研究了乙二醇和乙二胺在ZnO微球和层状集聚体形成过程中的作用并提出了可能的生长机理。在波长为300 nm光的激发下,发现ZnO微球和层状集聚体具有发光峰位于397 nm强的紫外光发光、485和520 nm弱的蓝绿光发光,它们分别起源于ZnO宽带隙的激子发射,氧空位与间隙氧之间的跃迁以及表面上离子化氧空位中的电子与价带中光激发的空穴之间的复合。     

水稳定的镁掺杂ZnO量子点:一锅法合成及细胞成像应用

一锅法合成了镁掺杂的ZnO量子点, 利用APTES对其进行表面包覆, 并采用XRD、TEM、UV-Vis、PL和FTIR等对材料进行了表征。结果表明镁掺杂能明显增强荧光发光强度, 在合适的掺杂浓度(30%)下其量子产率由11%增加到33%。通过APTES的表面包覆使镁掺杂的ZnO量子点具有良好的水溶性和荧光稳定性, 可用于MCF-7细胞成像研究。     

Microstructure-controlled aerosol-gel synthesis of ZnO quantum dots dispersed in SiO2 nanospheres

ZnO quantum dots dispersed in a silica matrix were synthesized from a TEOS:Zn(NO(3))(2) solution by a one-step aerosol-gel method. It was demonstrated that the molar concentration ratio of Zn to Si (Zn/Si) in the aqueous solution was an efficient parameter with which to control the size, the degree of agglomeration, and the microstructure of ZnO quantum dots (QDs) in the SiO(2) matrix. When Zn/Si ≤ 0.5, unaggregated quantum dots as small as 2 nm were distributed preferentially inside SiO(2) spheres. When Zn/Si ≥ 1.0, however, ZnO QDs of ～7 nm were agglomerated and reached the SiO(2) surface. When decreasing the ratio of the Zn/Si, a blue shift in the band gap of ZnO was observed from the UV/Visible absorption spectra, representing the quantum size effect. The photoluminescence emission spectra at room temperature denoted two wide peaks of deep-level defect-related emissions at 2.2-2.8 eV. When decreasing Zn/Si, the first peak at ～2.3 eV was blue-shifted in keeping with the decrease in the size of the QDs. Interestingly, the second visible peak at 2.8 eV disappeared in the surface-exposed ZnO QDs when Zn/Si ≥ 1.0.     

Tight confinement of semiconductor quantum dots within zeolite by surface silylation

Various MX (M = Cd, Zn, and Mn, X = S and Se) semiconductor quantum dots (QDs) were prepared in zeolite Y. While the QDs are readily expelled from zeolite interior upon exposure of the MX QD-incorporating zeolite Y ([MX]-Y) to the ambient atmosphere due to moisture adsorption, they remain tightly confined within zeolites even after exposure to the moist atmosphere for several weeks when the surfaces were silylated with various silylating agents. This methodology will facilitate the characterization of the zeolite-encapsulated QDs and the application of QD-incorporating zeolites.     

Photoassisted synthesis of CdSe and core-shell CdSe/CdS quantum dots

This paper describes the synthesis of core-shell CdSe/CdS quantum dots (QDs) in aqueous solution by a simple photoassisted method. CdSe was prepared from cadmium nitrate and 1,1-dimethylselenourea precursors under illumination for up to 3 h using a pulsed Nd:YAG laser at 532 nm. The effects that the temperature and the laser irradiation process have on the synthesis of CdSe were monitored by a series of experiments using the precursors at a Cd:Se concentration ratio of 4. Upon increasing the temperature (80-140 degrees C), the size of the CdSe QDs increases and the time required for reaching a maximum photoluminescence (PL) is shortened. Although the as-prepared CdSe QDs possess greater quantum yields (up to 0.072%) compared to those obtained by microwave heating (0.016%), they still fluoresce only weakly. After passivation of CdSe (prepared at 80 degrees C) by CdS using thioacetamide as the S source (Se:S concentration ratio of 1) at 80 degrees C for 24 h, the quantum yield of the core-shell CdSe/CdS QDs at 603 nm is 2.4%. Under UV irradiation of CdSe/CdS for 24 h using a 100-W Hg-Xe lamp, the maximum quantum yield of the stable QDs is 60% at 589 nm. A small bandwidth (W1/2 < 35 nm) indicates the narrow size distribution of the as-prepared core-shell CdSe/CdS QDs. This simple photoassisted method also allows the preparation of differently sized (3.7-6.3-nm diameters) core-shell CdSe/CdS QDs that emit in a wide range (from green to red) when excited at 480 nm.     

Wave function engineering for ultrafast charge separation and slow charge recombination in type II core/shell quantum dots

The size dependence of optical and electronic properties of semiconductor quantum dots (QDs) have been extensively studied in various applications ranging from solar energy conversion to biological imaging. Core/shell QDs allow further tuning of these properties by controlling the spatial distributions of the conduction-band electron and valence-band hole wave functions through the choice of the core/shell materials and their size/thickness. It is possible to engineer type II core/shell QDs, such as CdTe/CdSe, in which the lowest energy conduction-band electron is largely localized in the shell while the lowest energy valence-band hole is localized in the core. This spatial distribution enables ultrafast electron transfer to the surface-adsorbed electron acceptors due to enhanced electron density on the shell materials, while simultaneously retarding the charge recombination process because the shell acts as a tunneling barrier for the core localized hole. Using ultrafast transient absorption spectroscopy, we show that in CdTe/CdSe-anthraquinone (AQ) complexes, after the initial ultrafast (~770 fs) intra-QD electron transfer from the CdTe core to the CdSe shell, the shell-localized electron is transferred to the adsorbed AQ with a half-life of 2.7 ps. The subsequent charge recombination from the reduced acceptor, AQ(-), to the hole in the CdTe core has a half-life of 92 ns. Compared to CdSe-AQ complexes, the type II band alignment in CdTe/CdSe QDs maintains similar ultrafast charge separation while retarding the charge recombination by 100-fold. This unique ultrafast charge separation and slow recombination property, coupled with longer single and multiple exciton lifetimes in type II QDs, suggests that they are ideal light-harvesting materials for solar energy conversion.