衬底温度和硼掺杂对p型氢化微晶硅薄膜结构和电学特性的影响

以B₂H₆为掺杂剂,采用射频等离子体增强化学气相沉积技术在玻璃衬底上制备p型氢化微晶硅薄膜.研究了衬底温度和硼烷掺杂比对薄膜的微结构和暗电导率的影响.结果表明：在较高的衬底温度下很低的硼烷掺杂比即可导致薄膜非晶化;在实验范围内,随着衬底温度升高薄膜的晶化率单调下降,暗电导率先缓慢增加然后迅速下降,变化趋势与硼烷掺杂比的影响极为相似.最后着重讨论了p型氢化微晶硅薄膜的生长机理. 关键词： p型氢化微晶硅薄膜 衬底温度 晶化率 电导率     

正常金属/绝缘层/s波超导隧道结中绝缘层对微分电导的影响

在正常金属／绝缘层／s波超导隧道结（NIS结）中，以方势垒描述绝缘层对准粒子输运的影 响，运用Bogoliubov_de Gennes（BdG）方程、Blonder_Tinkham_Klapwijk(BTK)理论，计算 了NIS隧道结中的准粒子输运系数和微分电导.研究表明,微分电导随绝缘层厚度的变化呈振 荡和衰减两种趋势，其振荡的周期和衰减的快慢均强烈地依赖于绝缘层的势垒值以及V=Δ ₀/e的偏压值，电导峰的高低及峰的位置与绝缘层厚度密切相关，显示了比δ势 描述更为丰富多彩的隧道谱. 关键词： NIS结 方势垒 微分电导     

硼对沉积本征微晶硅薄膜特性的影响

采用甚高频等离子体增强化学气相沉积(VHF-PECVD)技术制备了不同腔室环境下的微晶硅薄膜.对单室沉积掺杂层p材料后遗留在腔室中的硼对本征微晶i材料电学特性和结构特性的影响进行了详细研究.测试结果表明：单室沉积p层后的硼降低了微晶i层材料的暗电导,增加了材料的光敏性;由于硼对i层污染程度的不同,使得材料的激活能发生了变化;腔室中残余的硼也导致微晶硅薄膜的结晶状况恶化,同时弱化了材料的(220)择优取向.而在较高功率和较强氢稀释下制备的晶化率较高,(220)晶向明显择优的材料受硼污染影响相对减小. 关键词： 单室 甚高频等离子体增强化学气相沉积 微晶硅 硼     

H2， He混合稀释生长微晶硅锗薄膜

采用H₂,He混合气体稀释等离子辅助反应热化学气相沉积法生长微晶硅锗薄膜,并在生长过程中对等离子体进行光发射光谱在线监测.结果表明：混合气体稀释法可以有效提高等离子体中的原子氢数目,降低等离子体中的电子温度;用XRD和光暗电导率表征样品的微结构和光电特性时发现,通过优化混合稀释气体中He和H₂气体的比例,能够减少薄膜中的缺陷态,促进薄膜<220>择优取向生长,有效改善微晶硅锗薄膜结构,提高光电吸收性能. 关键词： 化学气相沉积 微晶硅锗薄膜 光发射光谱 X射线衍射     

多晶硅薄膜低温生长中的表面反应控制

报道用SiF₄和H₂的间接微波等离子体化学气相沉积方法低温生长多晶硅(poly-Si)薄膜.实验发现,等离子体中的离子、荷电集团对薄膜生长表面的轰击是影响薄膜结晶质量的重要因素之一.通过外加偏压抑制这些荷电粒子的动能是控制表面生长反应、制备高质量ploy-Si薄膜的有效方法.在合适的外加偏压下制备的poly-Si薄膜,氢含量仅约为0.9at%,中心位于520cm^-1的Raman特征峰半高宽约为4.4cm^-1. 关键词： 多晶硅薄膜 低温生长 表面生长反应 外加偏压     

HW-MWECR-CVD法制备氢化微晶硅薄膜及其微结构研究

用热丝辅助微波电子回旋共振化学气相沉积方法制备出高晶化体积分数的氢化微晶硅(μc-Si:H)薄膜.拉曼散射和X射线衍射技术对样品的微观结构测量分析表明，当反应气体中SiH₄浓度在3.6%—50%之间大范围变化时，μc-Si:H薄膜均具有高的晶化体积分数.进一步的分析表明，在SiH₄浓度较大时制备的薄膜，其结构以非晶-微晶的过渡相为主.薄膜易于晶化或生长为过渡相的主要原因是微波电子回旋共振使SiH₄气体高度分解，等离子体高度电离. 关键词： 微波电子回旋共振化学气相沉积 氢化微晶硅薄膜 拉曼散射 X射线衍射     

脉冲偏压电弧离子镀TiO2薄膜的力学与光学性能

用脉冲偏压电弧离子镀技术在玻璃基片上制备均匀透明的TiO₂薄膜.利用X射线衍射仪、原子力显微镜、扫描电子显微镜、紫外-可见透射光谱仪和纳米压痕仪等手段,对不同脉冲负偏压下合成薄膜的相结构、微观结构、表面形貌、力学和光学性能进行表征.结果表明，沉积态薄膜为非晶态.脉冲负偏压对薄膜性能有明显的影响.随偏压的增加，薄膜厚度、硬度和弹性模量均先增大后减小，前者峰值出现在100—200 V负偏压范围，后两者则在250—350V范围.300 V负偏压时薄膜硬度最高，薄膜达到原子级表面光滑度，均方 关键词： 2薄膜')" href="#">TiO₂薄膜 脉冲偏压电弧离子镀 硬度 折射率     

微晶硅薄膜的表面粗糙度及其生长机制的X射线掠角反射研究

采用等离子体增强化学气相沉积技术沉积一系列处于不同生长阶段的微晶硅薄膜.通过同步辐射X射线掠角反射技术研究微晶硅薄膜的表面粗糙度随时间等的演化，探讨微晶硅薄膜的生长动力学过程及其生长机制.研究结果表明，在衬底温度为200 ℃，电极间距为2 cm，沉积气压为6.66×1０² Pa，射频功率密度为0.22 W/cm²，氢稀释度分别为99%和98%的沉积条件下，在玻璃衬底上生长的微晶硅薄膜生长指数β分别为0.21±0.01和0.24±0.01.根据KPZ模型，微晶硅薄膜的生长机制为有限扩散生长. 关键词： X射线掠角反射 微晶硅薄膜 表面粗糙度 生长机制     

二次离子质谱深度剖面分析氢化微晶硅薄膜中的氧污染

运用二次离子质谱研究了甚高频等离子体增强化学气相沉积制备的不同硅烷浓度和功率条件下薄膜中的氧污染情况.结果发现：薄膜中的氧含量随硅烷浓度和功率的变化而改变.制备的微晶硅薄膜，晶化程度越高薄膜中的氧含量相对越多.另外，不同本底真空中的氧污染实验结果表明：微晶硅材料中的氧含量与本底真空有很大的关系，因此要制备高质量的微晶硅材料，高的本底真空是必要条件. 关键词： 甚高频等离子体增强化学气相沉积 二次离子质谱 氧污染     

钽硅团簇电子输运性质的第一性原理研究

利用基于密度泛函理论和非平衡格林函数的第一性原理方法,对位于两段半无限长铝导线之间的TaSi₃团簇的电子输运性质进行了研究.研究表明：该团簇分子投影自洽哈密顿量的8态和9态决定着系统在小偏压下的输运特性.TaSi₃团簇的平衡态电导对团簇与电极间距离的变化十分敏感,当距离小于0.35 nm时,平衡态电导随之剧烈的振荡;当距离大于0.35 nm后,平衡态电导迅速减小.在-1—1 V偏压下,团簇表现出一定的电压-电流非对称整流特性,在0.3—0.4 V的偏压下,观察到了该团簇的负微分电导特性. 关键词： 铝/钽硅混合团簇/铝分子结 电子输运 密度泛函理论 非平衡格林函数     

Influence of small DC bias field on the electrical behaviour of Sr- and Mg-doped lanthanum gallate

One of the promising electrolyte materials for solid oxide fuel cells application, Sr- and Mg-doped lanthanum gallate La_0.9Sr_0.1Ga_0.8Mg_0.2O_3-δ (LSGM), is synthesized by conventional solid state ceramic route. X-ray Rietveld analysis confirms the formation of main orthorhombic phase at room temperature along with a few minor secondary phases. SEM micrograph reveals the grain and grainboundary morphology of the system. Electrical conductivity of the LSGM sample is measured in the temperature range 573–873 K and in the frequency range 20 Hz–1 MHz at a few small DC bias fields (at 0.0, 0.5, 1.0, 1.5 and 2.0 V). The conductivity spectra show power-law behaviour. Electrical conductivity of the sample is found to be weakly dependent on DC bias field. This is attributed to field-dependent bulk and grainboundary conduction processes. In the present system, under investigated bias field range, the possibility of formation of Schottky barrier is ruled out. The concept of grainboundary channel (pathway) modulation on the application of bias field is proposed.     

Dielectric and relaxation properties of thermally evaporated nanostructured bismuth sulfide thin films

Nanostructured bismuth sulfide thin films were prepared onto glass substrates with particle size of 21 nm by thermal evaporation using readily prepared bismuth sulfide nanocrystallite powder. The X-ray diffraction pattern revealed that bismuth sulfide thin films exhibit orthorhombic structure. The existence of quantum confinement effect was confirmed from the observed band gap energy of 1.86 eV. AC and DC electrical conductivity of Al/BiSnc/Al structures was investigated in the frequency range 0.5-100 kHz at different temperatures (303-463 K) under vacuum. The AC conductivity (σ_ac) is found to be proportional to angular frequency (ω^s). The obtained experimental result of the AC conductivity showed that the correlated barrier hopping model is the appropriate mechanism for the electron transport in the nanostructured bismuth sulfide thin films. DC conduction mechanism in these films was studied and possible conduction mechanism in the bismuth sulfide thin films was discussed.     

Photoconduction in amorphous thin films of Se90Sb10-xAgx glassy alloys

The present paper reports the steady state photoconductivity and photosensitivity response of thermally evaporated amorphous thin films of Se₉₀Sb_10-xAg_x(x = 2, 4, 6, 8, 10). Temperature dependence of dark conductivity is studied and activation energy is calculated for different samples. Temperature dependence of photoconductivity is also studied at different intensities. From temperature dependence of photoconductivity activation energy is computed at different intensities which are found to vary from 0.26 to 0.47 eV. Intensity dependence of photoconductivity has also been studied at different temperatures. These curves are plotted on logarithmic scale and found to be straight lines which show that photoconductivity follows a power law with intensity. Composition dependence of dark conductivity, activation energy of DC conduction and photosensitivity show that these parameters are highly. composition dependent and show a discontinuity at a particular composition when Ag concentration becomes 6 at. %. This is explained in terms of transition from floppy state to mechanically stabilized state at this composition.     

脉冲直流偏压增强的高质量立方氮化硼薄膜的合成

采用磁增强活性反应离子镀系统成功地合成了立方氮化硼薄膜.通过给基片施加脉冲直流偏压以代替传统的射频偏压,增强了立方氮化硼的成膜稳定性,研究了基片的直流脉冲偏压、等离子体放电电流、通入气体流量比(Ar/N₂)和基片温度沉积参数对立方氮化硼薄膜形成的影响规律.结果表明:随着基片负偏压和放电电流的增大,薄膜中立方氮化硼的纯度提高,当基片负偏压为155V,放电电流为15A时,可获得几乎单相的立方氮化硼薄膜.基片温度为500℃和Ar/N₂流量比为10时,最有利于立方氮化硼 关键词： 立方氮化硼 活性反应离子镀 脉冲偏压     

Correlation between substrate bias, growth process and structural properties of phosphorus incorporated tetrahedral amorphous carbon films

We investigate the growth process and structural properties of phosphorus incorporated tetrahedral amorphous carbon (ta-C:P) films which are deposited at different substrate biases by filtered cathodic vacuum arc technique with PH₃ as the dopant source. The films are characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscopy, Raman spectroscopy, residual stress measurement, UV/VIS/NIR absorption spectroscopy and temperature-dependent conductivity measurement. The atomic fraction of phosphorus in the films as a function of substrate bias is obtained by XPS analysis. The optimum bias for phosphorus incorporation is about −80 V. Raman spectra show that the amorphous structures of all samples with atomic-scaled smooth surface are not remarkably changed when PH₃ is implanted, but some small graphitic crystallites are formed. Moreover, phosphorus impurities and higher-energetic impinging ions are favorable for the clustering of sp² sites dispersed in sp³ skeleton and increase the level of structural ordering for ta-C:P films, which further releases the compressive stress and enhances the conductivity of the films. Our analysis establishes an interrelationship between microstructure, stress state, electrical properties, and substrate bias, which helps to understand the deposition mechanism of ta-C:P films.     

Anomalous magnetic properties of an iron film system deposited on fracture surfaces of α-Al2O3 ceramics

An iron film percolation system is fabricated by vapour-phase deposition on fracture surfaces of α-Al2O3 ceramics. The zero-field-cooled （ZFC） and field-cooled （FC） magnetization measurement reveals that the magnetic phase of the film samples evolve from a high-temperature ferromagnetic state to a low-temperature spin-glass-like state, which is also demonstrated by the temperature-dependent ac susceptibility of the iron films. The temperature dependence of the exchange bias field He of the iron film exhibits a minimum peak around the temperature T=5 K, which is independent of the magnitude of the cooling field Hcf. However, for T 〉 10K, （1） He is always negative when Hcf=2kOe and （2） for Hcf= 20 kOe （1Oe≈80 A/m）, He changes from negative to positive values as T increases. Our experimental results show that the anomalous hysteresis properties mainly result from the oxide surfaces of the films with spin-glass-like phase.     

Correlation between phosphorus concentration and opto-electrical properties of doped a-Si:H films

Phosphorus doped hydrogenated amorphous silicon (a-Si:H) films were prepared by decomposition of silane using RF plasma glow discharge. Both DC dark conductivity measurements, and spectrophotometric optical measurements through the range 200–3000 nm were recorded for the prepared films. The DC conductivity activation energy E_a decreased from 0.8 eV for the undoped sample to 0.34 eV for the highest used doping value. The optical energy gap E_g decreased ranging from 1.66 eV to 1.60 eV. The refractive index n, the density of charge carriers N/m* and the plasma frequency ω_p showed an opposite behavior, i.e. an increase in value with doping. Fitting the dispersion values to Sellmeier equation led to the determination of the material natural frequency of oscillating particles. A correlation between the changes in these parameters with the doping has been attempted.     

Photoconductivity and dark conductivity of hydrogenated amorphous silicon

The study of plasma-deposited hydrogenated amorphous silicon films prepared in various deposition systems and under the use of different gases (SiH₄, SiD₄, Si₂H₄) shows a unique correlation between the photoconductivity and the dark conductivity of undoped and lightly doped films grown under optimized conditions. Deviations from his relation occur at high doping levels, in particular for boron doping, as well as upon annealing. They are attributed to an increased density of gap states due to hydrogen depletion.     

Ag和Ti底层对[Fe/Pt]n多层膜有序化的影响

利用磁控溅射的方法，在热玻璃基片上制备了以Ag，Ti，Cu，Cr，Pt和Ta为底层的［Fe/Pt］_n多层膜，后经不同温度真空热处理，得到L1₀有序结构的FePt 薄膜（L1₀-FePt）.实验结果表明，以Ag和Ti为底层，通过采用基片加温，同时 利用［Fe/Pt］_n多层膜结构，可以促进FePt薄膜的有序化过程，使FePt-L1_０有序化温度从500℃降低到350℃.在较高的温度下退火，以Ag为底层对薄膜的磁性 能影响较小，而以Ti为底层在高于500℃退火后，矫顽力明显下降.在400℃退火20min后，以 Ag和Ti为底层的样品平行膜面的矫顽力分别达到597kA/m和645kA/m，剩磁比分别达到0.81和 0.94，为将来FePt-L1_０有序相合金薄膜用于未来超高密度磁记录介质打下基础. 关键词： ０-FePt薄膜')" href="#">L1_０-FePt薄膜 有序化温度 底层 多层膜结构     

Structure and reflective properties of Al-Cu-Fe quasicrystalline thin film prepared by laser induced arc method

Al-Cu-Fe thin films were prepared by laser induced arc (laser-arc) method from a single source—Al₆₃Cu₂₅Fe₁₂ alloy, which was proved to consist of quasicrystalline phase together with approximant phase. The composition of the deposited films meets the requirement for formation of icosahedral symmetry phase. Quasicrystalline phase was obtained after annealing the amorphous as-deposit film samples. The optical properties of the samples were investigated. Thin film samples of Al, Cu and Fe deposited under the same condition were employed for comparison. The results showed specific reflective properties of Al-Cu-Fe quasicrystal thin film in some wavelength range. The optical conductivity of the films exhibited a negative peak, centered about 440 nm in range of 190 to 800 nm. The Al-Cu-Fe quasicrystal thin films could absorb almost all the ray in the wavelength range from 420nm to 450 nm. The ratio of absorption was greater than 99%.