Improved Design of 8-Channel Silicon-on-Insulator (SOI) Arrayed Waveguide Grating (AWG) Multiplexer Using Tapered Entry into the Slab Waveguides

An improved design of silicon-on-insulator based 8 × 8 AWG multiplexer is presented using tapered entry into the slab waveguide. Our simulation result clearly shows significant enhancement of electric field from 0.44 V/m to 0.732 V/m, reduction in insertion loss from 7.13 db to 2.7 db, with bandwidth of 230 GHz and channel spacing 200 GHz while keeping other parameters within acceptable limits.     

高线性度Al_xGa_(1-x)N/Al_yGa_(1-y)N/GaN高电子迁移率晶体管优化设计

对新型复合沟道AlxGa1-xN/AlyGa1-yN/GaN高电子迁移率晶体管(HEMT)进行了优化设计.从半导体能带理论与量子阱理论出发,自洽求解了器件层结构参数对器件导带能级以及二维电子气(2DEG)中载流子浓度和横向电场的影响.用TCAD软件仿真得到了器件的层结构参数对器件性能的影响.结合理论分析和仿真结果确定了器件的最佳外延层结构Al0.31Ga0.69N/Al0.04Ga0.96N/GaNHEMT.对栅长1μm,栅宽100μm的器件仿真表明,器件的最大跨导为300mS/mm,且在栅极电压-2—1V的宽范围内跨导变化很小,表明器件具有较好的线性度;器件的最大电流密度为1300mA/mm,特征频率为11.5GHz,最大振荡频率为32.5GHz.     

Pressure-induced absorption of microwave radiation by the oxygen molecule

It has been known that microwave absorptions at 9, 23 and 60 GHz by high pressure oxygen gas are considerably greater than expected by conventional theory, except at 68.7 GHz. A reasonable explanation is the pressure-induced absorption, which enhances the well established magnetic dipole absorption at the 60 GHz region. A total of 4.3 p db/km (p in atmosphere) of peak intensity is proposed to be due to the pressure-induced absorption in the 60 GHz region, compared to 145 db/km due to magnetic dipole absorption.     

Design and analysis of Si-based arch-shaped gate-all-around (GAA) tunneling field-effect transistor (TFET)

In this work, a Si-based arch-shaped gate-all-around (GAA) tunneling field-effect transistor (TFET) has been designed and analyzed. Various studies on III–V compound semiconductor materials for applications in TFET devices have been made and we adopt one of them to perform a physical design for boosting the tunneling probability. The GAA structure has a partially open region for extending the tunneling area and the channel is under the GAA region, which makes it an arch-shaped GAA structure. We have performed the design optimization with variables of epitaxy channel thickness (t_epi) and height of source region (H_source) in the Si-based TFET. The designed arch-shaped GAA TFET based on Si platform demonstrates excellent performances for low-power (LP) applications including on-state current (I_on) of 694 μA/μm, subthreshold swing (S) of 7.8 mV/dec, threshold voltage (V_t) of 0.1 V, current gain cut-off frequency (f_T) of 12 GHz, and maximum oscillation frequency (f_max) of 283 GHz.     

Oxide aperture scaling effect on high-speed (>16 GHz) vertical-cavity surface-emitting lasers performance

High-speed, oxide-confined, polyimide-planarized 850 nm vertical-cavity surface-emitting lasers (VCSELs) with oxide aperture diameters of 9, 10, 12, 15, 20, and 30 μm have been fabricated and characterized. For a 9 μm oxide aperture diameter, the lasers exhibit a resonance frequency, a 3-dB modulation frequency, and a modulation current efficiency factor (MCEF) up to 12.4, 16.5 GHz, and 10.9 GHz/mA^1/2, respectively, at only 7.9 kA/cm². Threshold voltage and current were 1.45 V and 0.7 mA, respectively. It is demonstrated that increasing the resonance frequency with bias does not guarantee a higher modulation bandwidth. The influence of oxide aperture scaling effect on VCSEL performance is presented.     

深亚微米SOI射频 LDMOS功率特性研究

提出了一种SOI LDMOS大信号等效电路模型,并给出了功率增益和输入阻抗表达式. 基于制备的深亚微米SOI射频LDMOS,测试了功率增益和功率附加效率. 深入研究了SOI LDMOS功率特性与栅长,单指宽度,工作电压和频率之间关系. 栅长由0.5 μm减到0.35 μm时,小信号功率增益增加44％,功率附加效率峰值增加9％. 单指宽度由20 μm增加到40 μm,600 μm /0.5 μm器件小信号功率增益降低23％,功率附加效率峰值降低9.3％. 漏端电压由3 V增加到5 V,600 μm /0.3 关键词： SOI射频 LDMOS 深亚微米 功率增益 功率附加效率     

Fully packaged high-speed Ti:LiNbO3, waveguide mach-zehnder intensity modulator

A fully packaged high-speed Ti:LiNbO₃, Mach-Zehnder intensity modulator at a 1.5μm wavelength has been designed and fabricated. The design has been considered with respect to optical insertion loss, switching voltage, and modulation bandwidth. Re fiber-pigtailed device has a 6.7 dB fiber-to-fiber loss and an optical modulation bandwidth of 8 GHz. The voltage required to switch the device from the on to off state is measured to be 7.3 V, with an on-off extinction ratio of 21 dB.     

High-Temperature Superconducting Microstrip Transmission Lines

A model calculation of a two-wire Josephson transmission line with a quasi-transverse electromagnetic wave is performed. The dispersion characteristics of the wave are estimated. The group velocity is shown to be (4.1–2.5)·10⁷ m/s for a temperature of 76–85.9 K, a critical current of 10⁹ A/m², a dielectric plate thickness of 10 m, and a relative permittivity of 40. The wave attenuation in this temperature range is 2 db/dm at a frequency of 10 GHz. The rough estimates suggest the feasibility of designing microstrip transmission lines based on granular high-temperature superconducting films. These lines will provide delays up to 1 s and picosecond pulse transmission.     

A comparison of the performance of LiNbO3, and LiTaO3, traveling-wave phase modulators

A comparison of the phase modulators made by Ti:LiNbO₃ and Ti:LiTaO₃ optical waveguides is presented. Of particular interest is their halfwave voltages at the wavelength 0.6328 μm and the frequency responses for the same electrode structure. For the Ti:LiNbO₃ phase modulator, a halfwave voltage of 6.6 V and a band-width of 13 GHz are obtained. Whereas, the Ti:LiTaO₃, a 6.8 V halfwave voltage and 12 GHz bandwidth are obtained.     

A strained InAIAs/InGaAs superlattice avalanche photodiode with a waveguide structure for low bias-voltage operation

An InAIAs/InGaAs superlattice (SL) multiplication layer operating at an IC-power supply voltage was realized by introducing strain into the SL. Using this SL as an absorption and multiplication layer, edge-coupled InAIAs/InGaAs SL avalanche photodiodes with waveguide structures were demonstrated. An avalanche multiplication factor larger than 10 was achieved at a bias voltage of less than 7V. A wide 3 dB bandwidth of 8 GHz was obtained at a multiplication factor of 3 and a wavelength of 1.3 m.     

A dual band CMOS VCO with a balanced duty cycle buffer

This paper proposes a dual band VCO with a standard 0.35 μm CMOS process to generate 1.07 and 2.07 GHz. The proposed VCO architecture with 50% duty cycle circuit and a half adder (HA) is able to produce a frequency two times higher than that of the conventional VCOs. The measurement results demonstrate that the gain of VCO and power dissipation are 561 MHz/V and 14.6 mW, respectively. The phase noises of the dual band VCO are measured to be −102.55 and −95.88 dBc/Hz at 2 MHz offset from 1.07 and 2.07 GHz, respectively.     

A 385–500 GHz SIDEBAND-SEPARATING (2SB) SIS MIXER BASED ON A WAVEGUIDE SPLIT-BLOCK COUPLER

We have developed a 385–500 GHz sideband-separating (2SB) mixer, which is based on a waveguide split-block coupler at the edge of the H-plane of the 508 μm × 254 μm (WR 2.0) waveguide, for the Atacama Large Millimeter/submillimeter Array (ALMA). An RF/LO coupler, which contains an RF quadrature hybrid, two LO couplers, and an in-phase power divider, was designed with the issue of mechanical tolerance taken into account. The RF/LO coupler was measured optically with a microscope and electrically with a submillimeter vector network analyzer. The image rejection ratio (IRR) and the single-sideband (SSB) noise temperature of the receiver using the RF/LO coupler have also been measured. The IRR was found to be larger than 8 dB and typically ∼ 12 dB in the 385–500 GHz band. The SSB noise temperature of this receiver is 80 K at the band center, which corresponds to 4 times the quantum noise limit (hf/k) in SSB, and 250 K at the band edges. An erratum to this article can be found at     

V(us) and m(s) from hadronic tau decays

Recent experimental results on hadronic tau decays into strange particles by the OPAL Collaboration are employed to determine V(us) and m(s) from moments of the invariant mass distribution. Our results are V(us)=0.2208+/-0.0034 and m(s)(2 GeV)=81+/-22 MeV. The error on V(us) is dominated by experiment and should be improvable in the future. Nevertheless, already now our result is competitive with the standard extraction of V(us) from K(e3) decays, and it is compatible with unitarity.     

Poly(styrene)-based graded-index plastic optical fiber for home networks

We investigated poly(styrene) (PSt)-based graded-index plastic optical fiber (GI-POF) with low loss and high bandwidth for home networks. To install the GI-POF in home networks, the attenuation must be below 200 dB/km at a 670-680 nm wavelength, and the bandwidth must be over 2.0 GHz for the 50 m fiber. In this study, we selected a dibenzothiophene (DBT) as a dopant to PSt, and we fabricated PSt-DBT-based GI-POF. We confirmed that the PSt-DBT-based GI-POF has high bandwidth (4.4 GHz) for 50 m fiber and low loss (166-193 dB/km) at a 670-680 nm wavelength and obtained the GI-POF that satisfied the requirements for home networks.     

Broad-Band Integrated Optical Electric Field Sensor Using Reflection Mach-Zehnder Waveguide Modulator

A lithium niobate (LiNbO₃) broad-band photonic sensor using reflection-type Mach-Zehnder optical waveguide modulator has been designed, fabricated, and experimentally demonstrated. The bare chip size of the sensor is microminiaturized as small as 20×5×0.5 mm³. The sensor has a wide band frequency response from 10 kHz to 20 GHz with variation less than ± 5 dB. The sensor system shows better linear characteristic from 100 mV/m to 700 V/m, and the sensitivity is 33 mV/m. Besides, the nanosecond EMP with intensity of 30 kV/m has been measured in the time domain.     

GaAs travelling-wave optical modulator using a coplanar slow-wave electrode with periodic overlays

A coplanar slow-wave electrode with periodic cross-tie overlays has been used to satisfy the essential phase velocity matching between the modulation and optical waves for wideband travelling-wave optical modulators. For an optimized modulator of 4 mm length at 1.3 m light wavelength, the calculated halfwave modulation voltage (23 V) is slightly higher than that (20 V) of conventional coplanar modulators but the 3 dB bandwidth (100 GHz) is much wider than the bandwidth limit (30 GHz) of walkoff-limited conventional coplanar modulators. The measured effective index (4.61) of the modulation wave is much higher than that (2.65) of conventional coplanar electrodes and agrees very well with the calculated one (4.25).     

Large tunable FMR frequency shift by magnetoelectric coupling in oblique-sputtered Fe_(52.5)Co_(22.5)B_(25.0)/PZN-PT multiferroic heterostructure

In this study, we observe a strong inverse magnetoelectric coupling in Fe_(52.5)Co_(22.5)B_(25.0)/PZN-PT multiferroic heterostructure, which produces large electric field(E-field) tunability of microwave magnetic properties. With the increase of the E-field from 0 to 8 kV/cm, the magnetic anisotropy field Heffis dramatically enhanced from 169 to 600 Oe, which further leads to a significant enhancement of ferromagnetic resonance frequency from 4.57 to 8.73 GHz under zero bias magnetic field, and a simultaneous decrease of the damping constant α from 0.021 to 0.0186. These features demonstrate that this multiferroic composite is a promising candidate for fabricating E-field tunable microwave components.     

The Microwave Spectrum of m-Tolunitrile: Methyl Internal Rotation and (14)N Nuclear Quadrupole Coupling

The microwave spectrum of m-tolunitrile (3-methylbenzonitrile, m-C(6)H(4)CH(3)CN) has been investigated in the frequency range from 1 to 4 and 8 to 26.5 GHz. The spectra in the two lowest states of internal methyl rotation (m = 0, +/-1) were recorded by means of pulsed molecular beam Fourier transform microwave (MB-FTMW) spectrometers. The interpretation of the spectra was based on an asymmetric frame-symmetric top Hamiltonian with inclusion of centrifugal distortion terms and first-order contributions from (14)N nuclear quadrupole coupling. A least-squares analysis yielded the rotational constants A = 3295.9103(10) MHz, B = 1199.1188(2) MHz, C = 883.9223(1) MHz, all elements of the nuclear quadrupole coupling tensor chi(aa) = -3.626(1) MHz, chi(bb) = 1.684(1) MHz, chi(cc) = 1.943(1) MHz, and chi(ab) = -1.870(3) MHz, as well as the threefold barrier to internal rotation, V(3) = 14.2 cm(-1), and the angle between the internal rotor axis and the principal moment of inertia a axis, θ = 42.66 degrees, using fixed values for the sixfold barrier term V(6) (-11 cm(-1)) and the moment of inertia of the methyl top I(alpha) (3.16 u ?(2)). Copyright 2000 Academic Press.     

一款2 G/s采样率20 GHz带宽主从式跟踪保持电路设计研究

设计了一款全差分、20 GHz带宽主从式跟踪保持芯片(MS-THA)。该芯片采样率为2 G/s,工作带宽大于20 GHz,采用0.13μm SiGe BiCMOS工艺实现。该芯片采用传统的开关发射极跟随器(SEF)作为跟踪保持核心电路,Cherryhooper电路作为输入缓冲和输出缓冲的带宽增强核心电路,并利用交叉反馈电容抑制馈通。为了验证上述电路的有效性,设计了一个单级THA电路,测试结果为MS-THA电路提供了足够的支持。在单电源+3.3 V供电、输入直流电平为0 V,2 G/s采样率以及-3 dBm输入信号功率条件下,获得的单端输出无杂散动态范围小于-23.5 dB,总功耗约为300 mW。     

Otpically illuminated dielectric interfaces as high-speed far-infrared modulators

A new device for the gigahertz modulation of far-infrared radiation is analytically and numerically analyzed. It consists of a thin layer of a high-mobility, direct-bandgap semiconductor, such as GaAs, in which a high-density electron-hole plasma is rapidly created and destroyed, thereby rapidly changing the free-carrier reflectivity of the active layer. Illumination by a high-power, near-infrared laser diode array generates the plasma through intrinsic photoconduction. It is shown that this device acis primarily as an amplitude modulator, and that its efficiency increases sharply with increasing far-IR frequency, in contrast to a Schottky diode, which acts primarily as a phase modulator, and whose efficiency falls off sharply with far-IR frequency. The breakeven frequency lies at about 1.5 THz, depending slightly on the assumed device parameters. The relative advantage of the new device increases rapidly with increasing far-infrared frequency. At an operating frequency of 2.5 THz (119 m), for example, a 1 GHz modulation bandwidth may be achieved with a single-sideband conversion loss of only-21 db, versus a Schottky's loss of-39 db, assuming a laser diode power of 1 W, which is readily available from recently developed laser diode arrays.