Heteroepitaxial GaN films on silicon substrates with porous buffer layers

New complex buffer layers based on a porous material have been developed for epitaxial growth of GaN films on Si substrates. The characteristics of gallium nitride heteroepitaxial layers grown on silicon substrates with new buffer layers by metal-organic vapor phase epitaxy are investigated. It is shown that the porous buffer layers improve the electric homogeneity and increase the photoluminescence intensity of epitaxial GaN films on Si substrates to the values comparable with those for reference GaN films on Al₂O₃ substrates. It is found that a fianite layer in a complex buffer is a barrier for silicon diffusion from the substrate into a GaN film.     

A comparative study of fibre-textured and epitaxial Nb-doped Pb(Zr0.53Ti0.47)O3 thin films on different substrates

Fibre-textured and epitaxial Nb-doped Pb(Zr_0.53Ti_0.47)O₃ (PNZT) thin films were grown on the different substrates by a sol-gel process. The [1 0 0]- and [1 1 1]-fibre-textured polycrystalline PNZT films were obtained on platinized silicon substrates by introducing PbO and TiO₂ seeding layers, while the [0 0 1]- and [1 1 1]-oriented epitaxial PNZT films were formed directly on Nb-doped SrTiO₃ (Nb:STO) single-crystal substrates with (1 0 0) and (1 1 1) surfaces, respectively. The preferential orientation and phase structure of the fibre-textured and epitaxial PNZT films, as well as their influences on the electrical properties were investigated. Higher remnant polarization (P_r) and piezoelectric coefficient (d₃₃) were obtained for the epitaxial PNZT films on Nb:STO substrates than that for the fibre-textured ones on platinized silicon substrates. For both fibre-textured and epitaxial cases, the PNZT films with [1 0 0]/[0 0 1] orientations show higher piezoelectric responses than [1 1 1]-oriented ones, whereas better ferroelectric properties can be obtained in the latter. The intrinsic and extrinsic contributions were discussed to explain the difference in electrical properties for differently oriented fibre-textured and epitaxial PNZT films on different substrates.     

有机量子阱的光学性质

采用多源有机分子气相沉积系统(OMBD)制备了Alq₃，PBD/Alq₃，PBD/Alq₃/PBD单层、双层以及量子阱结构，利用电化学循环伏安法和吸收光谱、荧光光谱研究了量子阱的类型和样品的光致发光特性.电化学循环伏安法和吸收光谱的测量结果表明，PBD/Alq₃有机量子阱为Ⅰ型量子阱结构.荧光光谱的研究结果表明，单层Alq₃的光致发光峰不随Alq₃厚度变化而变化；但是双层PBD/Alq₃结构光致发光峰随Alq₃厚度的减小而发生蓝移；同样对于PBD/Alq₃/PBD量子阱结构光致发光峰随Alq₃厚度的减小而发生蓝移.对引起光谱蓝移的原因进行了讨论. 关键词： 有机量子阱 光谱蓝移     

有机多层量子阱的能量转移

采用多源有机分子气相沉积系统制备了不同类型的有机多量子阱结构，利用电化学循环伏安法和吸收光谱、荧光光谱研究了量子阱的类型、光致发光的特性.电化学循环伏安法和吸收光谱的测量结果表明，PBD/8-羟基喹啉铝(Alq₃)有机量子阱为Ⅰ型量子阱结构，NPB/Alq₃和BCP/Alq₃有机量子阱为Ⅱ型量子阱结构.荧光光谱的研究结果表明，PBD/Alq₃和BCP/Alq₃量子阱结构可以实现PBD，BCP向Alq₃能量完全转移，而NPB/Alq₃量子阱结构，NPB和Alq₃之间只是部分能量转移.文中对影响能量转移的因素进行了讨论. 关键词： 有机量子阱 能量转移     

La0.5Sr0.5CoO3薄膜的外延生长及其机理研究

利用脉冲激光制膜法,在多种衬底和温度条件下,系统研究了La_0.5Sr_0.5CoO₃(LSCO)薄膜的结构和外延生长特性,在LaAlO₃,SrTiO₃和MgO衬底上实现了LSCO薄膜的外延生长.外延生长的薄膜具有低的电阻率和金属性导电特征.研究表明,外延生长的最佳温度范围为700—800℃,最佳衬底为LaAlO₃.并着重探讨了衬底材料和淀积温度等多种因素对LSCO薄膜的生长与性 关键词：     

Defect structure of epitaxial layers of III nitrides as determined by analyzing the shape of X-ray diffraction peaks

The shape of X-ray diffraction epitaxial layers with high dislocation densities has been studied experimentally. Measurements with an X-ray diffractometer were performed in double- and triple-crystal setups with both CuK _α and MoK _α radiation. Epitaxial layers (GaN, AlN, AlGaN, ZnO, etc.) with different degrees of structural perfection grown by various methods on sapphire, silicon, and silicon carbide substrates have been examined. The layer thickness varied in the range of 0.5–30 μm. It has been found that the center part of peaks is well approximated by the Voigt function with different Lorentz fractions, while the wing intensity drops faster and may be represented by a power function (with the index that varies from one structure to another). A well-marked dependence on the ordering of dislocations was observed. The drop in intensity in the majority of structures with a regular system and regular threading dislocations was close to the theoretically predicted law Δθ^–3; the intensity in films with a chaotic distribution decreased much faster. The dependence of the peak shape on the order of reflection, the diffraction geometry, and the epitaxial layer thickness was also examined.     

1．55μmInGaAsP及其相应量子阱结构的LP-MOCVD生长

本文研究了用低压金属有机化合物汽相外延(LP-MOCVD)技术在(100)InP衬底上生长InGaAsp体材料及InGaAP/InP量子阱结构材料的生长条件。三甲基镓(TM63)、三甲基铟(TMh)和纯的砷烷(A8H3)、磷烷(PH3)分别用作Ⅲ族和Ⅴ族源,在非故意掺杂情况下,InGaAsP材料的载流子浓度为3.6×10¹⁵cm^-3;在液氦温度和室温下,与InP晶格匹配的InGaAsP光致发光半峰宽分别为19.2meV和63meV;对外延层的组分及厚度均匀性分别进行了转靶X光衍射仪,低温光致发光和扫描电子显微镜分析,对不同阱宽的量子阱结构材料测出了由于量子尺寸效应导致光致发光波长随阱宽增加而红移现象。     

Study of the influence of native oxide layers on atomic force microscopy imaging of semiconductor surfaces

We have investigated the influence of the native oxide layer on semiconductor surfaces on the imaging properties of the atomic force microscope operated under ambient conditions by using epitaxial In_1–x Ga _x As layers grown by Metal-Organic Chemical Vapour Deposition (MOCVD) on (001) oriented InP substrates which have been kept under ambient conditions for two years. The thickness and composition of the native oxide layers were studied with ellipsometry and X-ray photoelectron spectroscopy, respectively. Subsequently, the sample surfaces were imaged by means of atomic force microscopy operated in air which revealed terrace structures separated by monoatomic steps. The obtained data were compared with the surface morphology which can be expected from the MOCVD growth process. The results suggest that an accurate study of semiconductor layer growth by atomic force microscopy in air is possible.     

On the influence of free-carrier scattering mechanisms on semiconductor thin-film plasma spectra

IR plasma reflectivity spectra of semiconductor epitaxial layers on transparent substrates have been calculated by using a modified Drude dielectric function including a frequency-dependent relaxation rate of the form γ(ω) = γ₀+bω². Due to multiple reflections within the semiconductor film, weak structures in the bulk reflectivity spectra are enlarged in the film spectra. The sensitivity of the film reflectivity to variations of the relaxation rate is much larger than the bulk reflectivity for frequencies above the plasma edge and consequently this type of measurement is a very promising method for obtaining information about the scattering mechanisms of free carriers.     

MBE-grown Si: Er light-emitting structures: Effect of epitaxial growth conditions on impurity concentration and photoluminescence

The technology and properties of light-emitting structures based on silicon layers doped by erbium during epitaxial MBE growth are studied. The epitaxial layer forming on substrates prepared from Czochralski-grown silicon becomes doped by oxygen and carbon impurities in the process. This permits simplification of the Si: Er layer doping by luminescence-activating impurities, thus eliminating the need to make a special capillary for introducing them into the growth chamber from the vapor phase. The photoluminescence spectra of all the structures studied at 78 K are dominated by an Er-containing center whose emission line peaks at 1.542 μm. The intensity of this line measured as a function of the substrate and erbium dopant source temperatures over the ranges 400–700°C and 740–800°C, respectively, exhibits maxima. The edge luminescence and the P line observed in the PL spectra are excited predominantly in the substrate. The erbium atom concentration in the epitaxial layers grown at a substrate temperature of 600°C was studied by Rutherford proton backscattering and exhibits an exponential dependence on the erbium source temperature with an activation energy of ～2.2 eV.     

Lasing characteristics and growth of CdS epitaxial thin-films excited by second harmonic Nd: YAG laser radiation at 473 nm

The first experimental study on CdS epitaxial thin-film lasers with ZnS substrates is reported. For the first time single crystal layers of CdS have been grown on the (111) faces of ZnS substrate by the hydrogen transport method. Laser emission at 491.8 nm has been observed from these layers cooled near liquid-nitrogen temperature. Optical pumping is performed by the second harmonic of a Q-switched Nd: YAG laser operated at 473 nm, the energy of which exceeds slightly the band-gap energy of the cooled epitaxial CdS layer. The measured optical gain for these CdS thin-films compared with that for platelet CdS single crystals reveals that the optical confinement inside the epitaxial layer increases the optical gain by a factor of about two.     

Optimization of a GaN-based irregular multiple quantum well structure for a dichromatic white LED

GaN-based irregular multiple quantum well(IMQW) structures assembled two different types of QWs emitting complementary wavelengths for dichromatic white light-emitting diodes(LEDs) are optimized in order to obtain near white light emissions.The hole distributions and spontaneous emission spectra of the IMQW structures are analysed in detail by fully considering the effects of strain,well-coupling,valence band-mixing and polarization effect through employing a newly developed theoretical model from the k · p theory.Several structure parameters such as well material component,well width,layout of the wells and the thickness of barrier between different types of QWs are employed to analyse how these parameters together with the polarization effect influence the electronic and the optical properties of IMQW structure.Numerical results show that uniform hole distributions in different types of QWs are obtained when the number of the QWs emitting blue light is two,the number of the QWs emitting yellow light is one and the barrier between different types of QWs is 8nm in thickness.The near white light emission is realized using GaN-based IMQW structure with appropriate design parameters and injection level.     

A review on quantum well structures in photonic devices for enhanced speed and span of the transmission network

Quantum well devices feature heterostructures of very thin epitaxial layers of group III-V and II-VI semiconductor materials. Quantum well devices are integrated monolithically with various optoelectronics devices to provide photonic integrated circuits. The representative structure could be realized with GaAs wells with GaAlAs barriers for wavelengths around 0.9 μm and InGaAsP are used for longer wavelengths. Together with quantum well, superlattice structure is another popular design for InGaAs Avalanche Photo Diode (APD). Quantum well structures find their applications in improved lasers, superlattice for photodiodes, modulators and switches. Consequences of quantum well theory are available today in terms of quantum wires and quantum dots. Upon the application of the normal electric field to quantum well structures, exciton pairs becomes more and more confined and the sharp exciton absorption peaks are observed. The effect is termed as “Quantum Confined Stark Effect”. The electro-absorption effect is approximately 50 times larger in multiple quantum well structures than it is in bulk semiconductors. Another electro-absorption effect known as “Franz Keldysh Effect” has been employed in monolithic waveguide detector. These effects lead to electro-absorption lasers (EAL) as well as electro-absorption laser modulators (EML).     

Photoluminescence and secondary ion mass spectroscopy characterization of GaAs-AlGaAs quantum wells grown on GaAs (1 0 0) substrates with different surface treatments

GaAs (1 0 0) substrates prepared in a quartz chamber under a H₂/As₄ flux, and then exposed to air were used for the subsequent growth of GaAs-AlGaAs single quantum wells by molecular beam epitaxy. The substrates prepared by this method showed atomically flat surfaces corroborated by atomic force microscopy analysis. Quantum wells grown directly on these substrates without a GaAs buffer layer exhibited narrow and intense photoluminescence peaks, an indication of a high quality material. The secondary ion mass spectroscopy analysis showed oxygen and carbon traces on the first AlGaAs barrier layer grown after air exposure with no effects on the quantum wells optical emissions. From the results we conclude that the prepared GaAs surfaces are useful for the epitaxial growth of high quality quantum structures.     

Structural defects in 6H-SiC substrates and their effect on the sublimation growth of epitaxial layers in vacuum

The structural perfection of silicon carbide substrates and homoepitaxial layers grown on the substrates by sublimation has been studied by x-ray diffraction (topography and diffractometry) and optical microscopy. The optimum diffraction conditions (hkil reflections, radiation wavelength λ, and recording geometry) for revealing “micropipes” of the dislocation nature are determined. It is shown that the growth conditions used make it possible to obtain highly perfect epitaxial layers.     

AlGaN/GaN heterostructure grown on 1 -tilt sapphire substrate by MOCVD

AlGaN/GaN epitaxial layers were grown on 0^°-tilt and 1^°-tilt sapphire substrates by metalorganic chemical vapor deposition (MOCVD). With exactly the same growth conditions, it was found that dislocation density was smaller and crystal quality was better for the AlGaN/GaN epitaxial layers prepared on 1^°-tilt sapphire substrate. We also found that AlGaN/GaN epitaxial layers on 1^°-tilt sapphire substrate were grown with step growth mode while those on 0^°-tilt substrate were grown with two-dimensional island growth. From the temperature-dependent mobility, it was found that crystal quality of the AlGaN/GaN epitaxial layer prepared on 1^°-tilt sapphire substrate is better.     

Growth and modification of thin a-Si:H/a-Ge:H bi-layers to sacrificial c-SiGe alloys through ArF-Excimer laser assisted processing

A combination of ArF-Excimer laser assisted techniques has been used for depositing and modifying ultra thin amorphous Si/Ge bi-layer structures. The first step consisted in producing, at low substrate temperatures, thin bi-layer coatings through Laser induced Chemical Vapour Deposition (LCVD) in both, large areas as well as in small regions of Si(1 0 0) wafers. In the second step, these bi-layer structures have been modified through Pulsed Laser Induced Epitaxy (PLIE) for obtaining heteroepitaxial SiGe alloys with a thin buried Ge rich layer, while keeping a shallow upper Si rich surface with good crystalline quality. Threshold for epitaxial alloy formation has been determined by Raman spectroscopy and estimated to be above 200 mJ/cm². Optical profilometry has been used for evaluating the thickness of the structures and the lateral dimensions of patterned features. SEM, TOF-SIMS and XPS have been used to corroborate the results. For testing IC compatibility, some samples have been overgrown with epitaxial Si and etched through conventional IC processing techniques, revealing that the laser processed layers are suitable to be used as sacrificial layers for producing Micro-Electro-Mechanical Systems (MEMSs) or Silicon-on-Nothing (SON) devices.     

CBP/Alq3有机量子阱结构的光致发光

采用多源有机分子气相沉积系统(OMBD)制备了CBP/Alq₃有机多量子阱结构,利用电化学循环伏安特性和吸收光谱、小角X射线衍射、荧光光谱研究了量子阱的能带、结构和光致发光的特性。电化学循环伏安特性和吸收光谱的测量结果表明,CBP的最低占据分子轨道(LUMO)与最高占据分子轨道(HOMO)的位置分别为-2.74,-6.00eV,Alq₃的LUMO与HOMO的位置分别为-3.10,-5.80eV,所以CBP/Alq₃有机量子阱为Ⅰ型量子阱结构。小角X衍射测量显示,在小角的位置(2θ的范围在0°～3°)观察到了对应于量子阱结构的多级布拉格衍射峰,表明多层量子阱结构是有序的层状结构,界面比较完整,界面质量比较好。荧光光谱的研究结果表明,Ⅰ型量子阱结构可以有效地把能量从垒层传递给阱层,从而增强了阱层材料的发光。阱层的厚度对发光峰的位置影响很大,随阱层厚度减小,阱层材料的发光峰出现蓝移现象。并对引起发光峰蓝移的原因进行了讨论。     

Light propagation characteristics in quantum well structures of photonic crystals

Two-dimensional （2D） closed-cavity single quantum well （SQW） and multiple quantum well （MQW） structures are proposed based on the traditional 2D open-cavity SQW structures of photonic crystals. The numerical calculation results show that the proposed structures can greatly improve the optical characteristics compared with the traditional structures. It is found that the barrier thickness has a great impact on the optical characteristics of the closed-cavity MQW structures： when the barrier thickness is narrower, each resonant peak which appears in the SQW would split, the number of split times is just equal to the number of wells, and each well in the MQW structures is a travelling-wave-well, similar to the well in the open-cavity SQW structures; when the barrier thickness is wider, there is no effect of spectral splitting, and each well in the MQW structures is a standing-wave-well, just like the well in the closed-cavity SQW. The physical origin of different field distributions and the effect of the spectral splitting are provided.     

Photoconductive response of GaAs epitaxial layers

In the present work the photoconductive response of low resistivity, n-type GaAs epitaxial layers is studied by experimentally monitoring the dependence of the photoconductive gain (PG) optoelectronic parameter upon incident photon flux and temperature. The characterized samples fall into three major categories: ion implanted (II) GaAs epilayers formed within undoped, semi-insulating GaAs substrates; GaAs epitaxial layers grown by liquid phase epitaxy (LPE) on Cr-doped, semi-insulating GaAs substrates; and ungated GaAs MESFETs.