Mobility–diffusivity relationship for heavily doped organic semiconductors

The relationship between the diffusivity D _n and the mobility μ _n of chemically doped organic n-type semiconductors exhibiting a disordered band structure is presented. These semiconductors have a Gaussian-type density of states. So, calculations have been performed to elucidate the dependence of D _n /μ _n on the various parameters of this Gaussian density of states. Y. Roichman and N. Tessler (Appl. Phys. Lett. 80:1948, 2002), and subsequently Peng et al. (Appl. Phys. A 86:225, 2007), conducted numerical simulations to study this diffusivity–mobility relationship in organic semiconductors. However, almost all other previous studies of the diffusivity–mobility relationship for inorganic semiconductors are based on Fermi–Dirac integrals. An analytical formulation has therefore been developed for the diffusivity/mobility relationship for organic semiconductors based on Fermi–Dirac integrals. The D _n /μ _n relationship is general enough to be applicable to both non-degenerate and degenerate organic semiconductors. It may be an important tool to study electrical transport in these semiconductors.     

f-γ current fluctuations in organic semiconductors: evidence for percolation

The f^-γ sloped current noise power spectra, observed in organic semiconductors, have been interpreted within a variable range hopping mechanism of the fluctuations. The relative current noise power spectral density exhibits a maximum at the trap-filling transition between the ohmic and the space-charge-limited-current regime [Phys. Rev. Lett. 95, 236601 (2005)]. Here, we discuss the electronic conditions determining the crossover from ohmic to space-charge-limited transport. These arguments shed light on the need to adopt a percolative fluctuation picture to account for the competition between insulating and conductive phases coexisting at the transition, where small changes in the external bias lead to dramatic effects in the fluctuations.     

Structural and electronic properties of chiral single-wall copper nanotubes

The structural,energetic and electronic properties of chiral(n,m)(3≤n≤6,n/2≤m≤n)single-wall copper nanotubes(CuNTs)have been investigated by using projector-augmented wave method based on density-functional theory.The(4,3)CuNT is energetically stable and should be observed experimentally in both free-standing and tip-suspended conditions,whereas the(5,5)and(6,4)CuNTs should be observed in free-standing and tip-suspended conditions,respectively.The number of conductance channels in the CuNTs does not always correspond to the number of atomic strands comprising the nanotube.Charge density contours show that there is an enhanced interatomic interaction in CuNTs compared with Cu bulk.Current transporting states display different periods and chirality,the combined effects of which lead to weaker chiral currents on CuNTs.     

Structural and electronic properties of Fe-doped BaTiO3 and SrTiO3

We have performed first principles calculations of Fe-doped BaTiO3 and SrTiO3. Dopant formation energy, structure distortion, band structure and density of states have been computed. The dopant formation energy is found to be 6.8eV and 6.5eV for Fe-doped BaTiO3 and SrTiO3 respectively. The distances between Fe impurity and its nearest O atoms and between Fe atom and Ba or Sr atoms are smaller than those of the corresponding undoped bulk systems. The Fe defect energy band is obtained, which mainly originates from Fe 3d electrons. The band gap is still an indirect one after Fe doping for both BaTiO3 and SrWiO3, but the gap changes from Γ-R point to Γ-X point.     

Structural and electronic properties of BN M?bius stripes

In the present contribution it is applied first-principles calculations to investigate the electronic structure of boron nitride M?bius stripes, with armchair and zigzag configurations, obtained from boron nitride nanoribbons using a ??cut?? and ??glue?? process. The results show that the structural stability strongly depends on the length and width of the stripe. It is also found that the energy gap and work function depends on the structure chirality. Due to the formation of an antiphase boundary, zigzag stripes present tunable electronic properties, with significant potential for technological applications.     

Dynamic characterization of charge transport in organic and polymer transistors

In this paper we describe three methods that can be used to measure the transient response of organic and polymer field-effect transistors (FETs) and also how such measurements can be used to determine the drift mobility and velocity. The first method measures the response of a FET to a step voltage applied to the source with the gate grounded and the drain held at close to ground, while the second uses a ramp input to the source. The third technique evaluates the frequency response of the FET, connected as a diode, to a large-signal alternating voltage. We show that important information can be obtained from such measurements which can be quantitatively interpreted with the help of models that we are developing. In general, there is good agreement between the drift mobility measured with these approaches and the field-effect mobility calculated from transistor output and transfer characteristics. The specific results we present in this paper are for pentacene devices; however, other recent work by our group indicates that these results are more general.     

Direct top–down fabrication of nanoscale electrodes for organic semiconductors using fluoropolymer resists

We report the use of a fluoropolymer resist for the damage-free e-beam lithographic patterning of organic semiconductors. The same material is also shown to be suitable as an orthogonal electron beam resist for the patterning of top-contact electrodes on organic thin films. We demonstrate this by characterizing pentacene field-effect transistors with feature sizes as small as 100 nm and compare the performance of bottom- and top-contacted devices.     

Structural and electronic properties of small bimetallic Ag–Cu clusters

The structural and electronic properties of small gas-phase Ag_mCu_n clusters with m+n=2–5 atoms are investigated using spin-polarized density functional theory. The LANL2DZ effective core potential and the corresponding basis set are employed while the performance of several exchange-correlation functionals is assessed. For a given cluster size all possible compositions are subject to optimization using a variety of initial structures. The geometry, binding energy, relative stability, ionization potential, electron affinity and HOMO-LUMO gap are reported for the lowest energy structure of every cluster size and composition. The results show that planar structures are favored, triangular for trimers, rhombic for tetramers and trapezoidal for pentamers. Moreover, for tetramers and pentamers we found that silver atoms demonstrate a clear tendency to occupy edge positions. The calculation of electronic properties indicates that although all exchange-correlation functionals predict the same trends, the choice of method is crucial concerning the final quantitative results.     

Structural and electronic properties of GaN x As1−x alloys

The structural and electronic properties of cubic GaN _x As_1−x with N-concentration varying between 0.0 and 1.0 with step of 0.25 were investigated using the full potential–linearized augmented plane wave (FP-LAPW) method. We have used the local density approximation (LDA) and the generalized gradient approximation (GGA) for the exchange and correlation potential. In addition the Engel-Vosko generalized gradient approximation (EVGGA) was used for the band-structure calculations. The structural properties of the binary and ternary alloys were investigated. The electronic band structure, total and partial density of states as well as the electron charge density were determined for both the binary and their related ternary alloys. The energy gap of the alloys decreases when we move from x=0.0 to 0.25; then it increases by a factor of about 1.8 when we move from 0.25 to 0.5, 0.75 and 1.0 using EVGGA. For both LDA and GGA moving from x=0.0 to 0.25 causes the band gap to close, showing the metallic nature of the GaN_0.25As_0.75 alloy. When the composition of N moves through x=0.25, 0.5, 0.75 and 1, the band gap increases.     

Compact and efficient modulators for 100 Gb/s ETDM for telecom and interconnect applications

State of the art and prospects regarding semiconductor compact modulators and transmitters for on–off keying and more advanced modulations formats for output bitrates of 100 Gb/s and above are discussed. The implementation of a monolithically integrated transmitter comprising laser and light-intensity modulator is described and the prospects for a fully integrated transmitter for more advanced modulation formats elucidated, all for 100 Gb/s output bitrate     

Structural,mechanical, and electronic properties of P21/m-Carbon✰

The structural, mechanical, and electronic properties of P2₁/m-carbon were comprehensively investigated by using first principles calculations. Our calculated structure parameters are in good agreement with the previous theoretical values. P2₁/m-carbon consists of 10 atoms in a unit cell and is made of an exclusively sp³ hybridized bonding network. The calculated phonon spectra and elastic constant verify that P2₁/m-carbon is dynamically and mechanically stable at ambient pressure. The analysis of the electronic band structure reveals that P2₁/m-carbon is an insulator with a band gap of 5.47 eV. It has a large bulk moduli of 398 GPa and a high shear moduli of 457 GPa. Further mechanical properties demonstrate that P2₁/m-carbon is prone to be ductile and possesses a high Vickers hardness value of 82.3 GPa. These values show that P2₁/m-carbon simultaneously possesses ultra-incompressible and the superhard property. Furthermore, the X-ray diffraction spectra is also theoretically simulated to provide more structure information for future experimental observations.     

Structural and electronic properties of monolayer hydrogenated honeycomb III–V sheets from first-principles

Using first-principles calculations, we investigate the structural and electronic properties of monolayer hydrogenated honeycomb III–V sheets. The lattice constants and cohesive energies of the hydrogenated III–V (XY H₂, X=B, Al, Ga, and Y =N, P, As) sheets depend on the III–V elements and follow the same trend as the atomic radii of the elements. We find that the short lattice constants correspond to the large cohesive energies of the hydrogenated III–V sheets. Similar to the graphane sheet, the hydrogenated BP and BAs sheets prefer the chair conformation. While for the hydrogenated BN, AlN, AlP, and GaN sheets, the boat conformation is favored. For the hydrogenated AlAs, GaP, and GaAs sheets, the chair and boat conformations are degenerate structures. We obtain that all the hydrogenated III–V sheets are wide-gap semiconductors. With GW corrections, the band gaps of hydrogenated III–V sheets follow the order of nitrogen > phosphorous > arsenic compounds for both the chair and boat conformations.     

Energy band and electron-vibration coupling in organic thin films: photoelectron spectroscopy as a powerful tool for studying the charge transport

This article describes the origins of the width of the highest occupied molecular orbital (HOMO) state observed in the ultraviolet photoemission spectra (UPS) of thin organic semiconductor films. Although much research has been performed on the electrical properties of organic devices, a lot of crucial problems still remain. Among these problems, the charge mobility in organic semiconductor systems is one the most important subjects to be elucidated. In order to discuss the mobility, it is essential to understand both the intermolecular interaction and the electron-molecular vibration coupling. Experimental measurements of the energy band dispersion give information about the intermolecular interaction, and experimental detection of the HOMO hole-vibration coupling is indispensable to comprehend impacts of the electron-vibration coupling on the hole transport. Since most of the information is hidden behind the finite bandwidth of the HOMO, only careful UPS measurements can provide information on these important phenomena related to charge carrier dynamics. In this article, we summarize our recent challenges on UPS measurements of organic thin films, which give the band dispersion of the HOMO and the HOMO hole-vibration coupling, and discuss the origins of the UPS bandwidth that relates to the charge carrier dynamics.     

First principles study of electronic structure and carrier mobility in β-armchair antimony nanotubes

In recent work, we have investigated the structure and stability of β-armchair antimony nanotubes (SbNT) using density functional theory (DFT). We studied electronic properties like electronic band structure, density of states (DOS) and mechanical properties such as stiffness constant, Poisson's ratio, and mechanical strength for these nanotubes. We found that these nanotubes are energetically stable and semiconducting in nature with band-gap varying between 1.32 eV to 1.47 eV. We have also calculated effective mass and carrier mobility for these nanotubes. Furthermore, stiffness constant and mechanical strength of these nanotubes increases with increase in diameter. While, $(4,4)$ nanotube shows anomalously higher strength than other nanotubes. The results of effective mass and carrier mobility for these nanotubes shows that electrons have higher effective mass and therefore lesser mobility than holes for most of the nanotubes. Our calculations show that β-armchair antimony nanotubes (SbNT) could be use in nano-electronics.     

Calculation of shuffle 60° dislocation width and Peierls barrier and stress for semiconductors silicon and germanium

The dislocation width for shuffle 60° dislocation in semiconductors Si and Ge have been calculated by the improved P-N theory in which the discrete effect has been taken into account. Peierls barrier and stress have been evaluated with considering the contribution of strain energy. The discrete effect make dislocation width wider, and Peierls barrier and stress lower. The dislocation width of 60° dislocation in Si and Ge is respectively about 3.84 Å and 4.00 Å (～1b, b is the Burgers vector). In the case of 60° dislocation, after considering the contribution of strain energy, Peierls barrier and stress are increased. The Peierls barrier for 60° dislocation in Si and Ge is respectively about 15 meV/Å and 12–14 meV/Å, Peierls stress is about 3.8 meV/ų (0.6 GPa) and 2.7–3.3 meV/ų (0.4–0.5 GPa). The Peierls stress for Si agrees well with the numerical results and the critical stress at 0 K extrapolated from experimental data. Ge behaves similarly to Si.     

Structural,electronic and optical properties of ultrathin thallium nanowires – an ab initio study

The energetics and structural, electronic and optical absorption properties of thallium nanowires, Tl _n with n?=?1–18, have been investigated by employing a first-principles density functional theory in the local density approximation. The spin–orbit (SO) interaction has also been considered. We study four types of stable structures: planar, caged, pyramidal and helical. In general, the binding energy increases with the coordination number except in a few cases where the nearest-neighbours lie at comparatively larger separations. The maximum stability is seen for the helical configurations containing pentagons, hexagons, heptagons and octagons. Nanowires containing a core linear chain of atoms on the tube axis are more stable than the corresponding nanotubes having no such chains. All the wires or tubes are found to be metallic with or without consideration of the SO interaction. The electronic structures of the pentagonal-, hexagonal- and octagonal-configuration wires provide a large number of channels, which may give rise to large quantum ballistic conduction. One finds large differences between the optical absorption calculated with and without the SO interaction. Consideration of the SO interaction enhances the number of absorption peaks by approximately a factor of two. A strong and multi-peaked optical absorption, extending up to 4.0?eV including the visible region, appears for wires containing pentagons and octagons. These wires may thus be useful as a source of white radiation.