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1.
Ag和Ti底层对[Fe/Pt]n多层膜有序化的影响   总被引:1,自引:0,他引:1       下载免费PDF全文
冯春  李宝河  滕蛟  杨涛  于广华 《物理学报》2005,54(10):4898-4902
利用磁控溅射的方法,在热玻璃基片上制备了以Ag,Ti,Cu,Cr,Pt和Ta为底层的[Fe/Pt]n多层膜,后经不同温度真空热处理,得到L10有序结构的FePt 薄膜(L10-FePt).实验结果表明,以Ag和Ti为底层,通过采用基片加温,同时 利用[Fe/Pt]n多层膜结构,可以促进FePt薄膜的有序化过程,使FePt-L1有序化温度从500℃降低到350℃.在较高的温度下退火,以Ag为底层对薄膜的磁性 能影响较小,而以Ti为底层在高于500℃退火后,矫顽力明显下降.在400℃退火20min后,以 Ag和Ti为底层的样品平行膜面的矫顽力分别达到597kA/m和645kA/m,剩磁比分别达到0.81和 0.94,为将来FePt-L1有序相合金薄膜用于未来超高密度磁记录介质打下基础. 关键词: 0-FePt薄膜')" href="#">L1-FePt薄膜 有序化温度 底层 多层膜结构  相似文献   

2.
利用磁控溅射方法在100℃的MgO单晶基片上制备了[FePt/Au]10多层膜,并研究了采用FePt/Au多层膜结构对FePt薄膜的有序化温度、矫顽力(HC)、垂直磁各向异性、晶粒尺寸以及颗粒间磁交换耦合作用的影响.磁性测试结果表明:FePt/Au多层膜在退火后具有较高的HC、良好的垂直磁各向异性、较小的晶粒尺寸且无磁交换耦合作用.截面高分辨电镜分析表明:Au可以缓解MgO和FePt之间较大的晶格错配,从而促进薄膜的垂直磁各向异性;同时,采用FePt/Au多层膜结构增加了FePt/Au界面能、应力能以及Au原子在薄膜中的扩散作用,促进了薄膜的有序化,从而有效降低了有序化温度,并且大幅度提高其HC.此外,Au原子部分扩散到FePt相的边界处,起到抑制FePt晶粒生长、隔离FePt颗粒的作用,从而显著降低了FePt晶粒的尺寸和颗粒间磁交换耦合作用.  相似文献   

3.
冯春  詹倩  李宝河  滕蛟  李明华  姜勇  于广华 《物理学报》2009,58(5):3503-3508
利用磁控溅射方法在100℃的MgO单晶基片上制备了[FePt/Au]10多层膜,并研究了采用FePt/Au多层膜结构对FePt薄膜的有序化温度、矫顽力(HC)、垂直磁各向异性、晶粒尺寸以及颗粒间磁交换耦合作用的影响.磁性测试结果表明:FePt/Au多层膜在退火后具有较高的HC、良好的垂直磁各向异性、较小的晶粒尺寸且无磁交换耦合作用.截面高分辨电镜分析表明:Au可以缓解MgO和FePt之间较大的晶格错配,从而促进薄 关键词: 0-FePt薄膜')" href="#">L10-FePt薄膜 有序化温度 垂直磁各向异性 磁交换耦合作用  相似文献   

4.
张丽娇  蔡建旺 《物理学报》2007,56(12):7266-7273
室温下通过磁控溅射在表面热氧化的Si基片上生长了MgO/FexPt100-x双层膜和FexPt100-x单层膜系列样品,FexPt100-x的原子成分x=48—68.研究了热处理前后不同成分FePt薄膜的晶体结构和磁性的变化,尤其是MgO底层的引入对FePt的晶体结构和磁性的影响 关键词: FePt(001)薄膜 0相')" href="#">L10相  相似文献   

5.
缓冲层Ta对FePt薄膜L10有序相转变及矫顽力的影响   总被引:1,自引:0,他引:1       下载免费PDF全文
制备了Ta/FePt/C系列多层膜,研究了样品在不同温度退火后的磁特性和微结构.实验结果表明,不同厚度的Ta缓冲层具有不同的微结构特征,显著影响FePt层的L10有序相的形成及相应的矫顽力.当Ta缓冲层较薄,Ta层为非晶态,且较为粗糙,由此使FePt在界面处产生较多的缺陷并导致较高密度的晶界,在退火过程中,受束缚相对较弱的非晶态的Ta原子比较容易沿FePt的缺陷和晶界处向FePt层扩散,使FePt在相变过程中产生的应力比较容易释放,同时,Ta在扩散过程中产生的缺陷,降低了FePt有序 关键词: FePt薄膜 0相')" href="#">L10相 原子扩散  相似文献   

6.
李宝河  黄阀  杨涛  冯春  翟中海  朱逢吾 《物理学报》2005,54(8):3867-3871
用磁控溅射法在单晶MgO(100)基片上制备了[FePt 2 nm/Ag dnm]10多层膜, 经真空热处理后,得到具有高矫顽力的垂直取向L10-FePt/Ag颗粒膜.x射线衍射结 果表明,在250 ℃的热基片上溅射,当Ag层厚度d=3—11 nm时,FePt颗粒具有很好的[001]取向,随着Ag层厚度的增加,FePt颗粒尺寸减小.[FePt 2 nm/Ag 9 nm]10经过6 00 ℃真空热处理15 min后,颗粒大小仅约8 nm,垂直矫顽力达到692 kA/m.这种无磁耦合作用的颗粒膜,适合用作超高密度的垂直磁记录介质. 关键词: 磁控溅射 垂直磁记录 纳米颗粒膜 0-FePt/Ag')" href="#">L10-FePt/Ag  相似文献   

7.
采用脉冲激光沉积法,在MgO(100)面上外延生长了FePt:MgO多层纳米复合薄膜,FePt成分为Fe48Pt52.FePt纳米颗粒周期性嵌埋于单晶MgO外延层中.原位反射式高能电子衍射分析结果表明,MgO外延层呈层状生长,而FePt纳米颗粒呈岛状生长.在整个FePt:MgO纳米复合薄膜的生长过程中,成功实现了层状-岛状生长模式的交替控制.高分辨透射电子显微镜分析结果表明,退火热处理后,结晶完整的L10-FePt纳米颗粒粒径约为5 nm,呈扁平六角形状,在MgO基底上形成逐层排列的纳米点阵.磁滞回线结果表明,退火后薄膜矫顽力增大,有序度提高,磁性增强.  相似文献   

8.
用磁控溅射在热单晶MgO(100)基片上制备了[FePt/BN]多层膜,经真空热处理后,得到具有垂直取向L10-FePt/BN颗粒膜.X射线衍射结果和磁性测量的结果表明,[FePt(2nm)/BN(0.5nm)]10和[FePt(1nm)/BN(0.25nm)]20多层膜经700℃热处理1h后,均具有较好的(001)取向.[FePt(1nm)/BN(0.25nm)]20垂直矫顽力达到522kA/m,剩磁比达到0.99,开关场分布S达到0.94,FePt晶粒平均尺寸约15—20nm,适合用于将来超高密度的垂直磁记录介质. 关键词: 磁控溅射 垂直磁记录 0-FePt/BN纳米颗粒膜')" href="#">L10-FePt/BN纳米颗粒膜  相似文献   

9.
利用磁控溅射制备了薄膜厚度为50nm的系列(FexPt1-x)100-yCuy(x=0.46—0.56,y=0,0.04,0.12) 样品.利用直流共溅射方法精确控制Fe和Pt的原子比.实验结果表明,当x>0.52时,样品中添加Cu不能促进FePt的有序化,但是对于FePt化学原子定比或富Pt的样品,添加Cu可以促进FePt有序化,而且随着Fe含量的减少,需要更多的Cu添加才能实现较低温度下FePt薄膜的有序化.实验结果表明,原子比(FeCu)/Pt达到1.1—1.2的范围时,即可实现较低温度的有序化. 关键词: 0-FePt有序相')" href="#">L10-FePt有序相 磁控溅射 有序度 Cu掺杂  相似文献   

10.
采用磁控溅射方法在自然氧化的单晶Si(100)衬底上制备了纳米结构的Fe53Pt47薄膜,并研究热处理后薄膜中的磁相互作用、晶粒尺寸与热处理温度的关系.经400℃热处理后,FePt薄膜中有明显的面心四方相形成,薄膜表现出硬磁性,晶粒尺度在20 nm,薄膜内部存在软硬磁交换耦合作用;随着热处理温度升高,硬磁相含量增加.同时由于FePt薄膜的晶粒长大,部分软硬磁晶粒之间的交换耦合作用失效;600℃热处理后,FePt的面心立方相已经完全转变为面心四方相,薄膜矫顽力由硬磁相之间的静磁作用贡献. 关键词: 磁性薄膜 纳米晶 磁性能 热处理  相似文献   

11.
The effect of ultrathin Fe underlayer on the strong in-plane magnetization of FePt magnetic thin film was investigated. This FePt thin film could be attained using the ultrathin Fe underlayer with 1 nm thickness. The in-plane coercivity of FePt film with 20 nm thickness grown on ultrathin Fe underlayer was high up to 7400 Oe. However, its out-of-plane coercivity was extremely low to 350 Oe compared to those of FePt thin films in other conventional studies. This result indicates that FePt thin film was strongly in-plane magnetized by ultrathin Fe underlayer. The strong ordering phase transformation kinetics and the high texturing to in-plane direction of the FePt thin film by ultrathin Fe underlayer were confirmed by Kinetics Monte Carlo (KMC) simulation and XRD measurement result, respectively. It is also supposed that they are associated with the reduction of an interface free energy between the film and the substrate with an introduction of ultrathin underlayer.  相似文献   

12.
Structure, microstructure, magnetic properties of 300-nm-thick FePt films with 10-nm-thick Hf underlayer have been studied. The experimental results showed that the very thin Hf underlayer could promote the ordering at reduced temperatures by facilitating the nucleation of the order phase, leading to refined grain size and magnetic domain size. Therefore, the permanent magnetic properties of FePt films were enhanced. (BH)max and Hc of FePt films were greatly enhanced from 5.0–21.0 MGOe and 1.4–11.0 kOe for single layer to 10.2–23.6 MGOe and 4.5–13.2 kOe for Hf-underlayered films annealed in Ta region of 400–600 °C, respectively. Nevertheless, the severe interdiffusion between the Hf and FePt layers at Ta=800 °C resulted in the decreased S, coarsened surface morphology, grain and magnetic domain sizes, and therefore the slightly decreased (BH)max to 18.0 MGOe.  相似文献   

13.
The effect of Cr100−xTix underlayer on orderd-L10 FePt films was investigated. A low-temperature ordering of FePt films could be attained through changing the Ti content of Cr100−xTix underlayer. The ordering temperature of the 30 nm FePt film grown on 20 nm Cr90Ti10 underlayer was reduced to 250 °C which is practical manufacture process temperature. An in-plane coercivity was very high to 6000 Oe and a ratio of remnant magnetization (Mr) to saturation magnetization (Ms) was as large as 0.85. This result indicates that the coercivity obtained at 250 °C by the effect of CrTi underlayer is significantly higher than those obtained at 250-275 °C by the effect of underlayers in other conventional studies. The prominent improvement of the magnetic properties of ordered FePt thin films at low temperature of 250 °C could be understood with considering the strain-induced ordering phase transformation associated with lattice mismatch between Cr underlayer and FePt magnetic layer due to an addition of Ti content.  相似文献   

14.
采用直流磁控溅射的方法在氧化镁(100)单晶基板上生长了一系列c轴垂直取向的FePt薄膜,通过改变沉积时的基板温度,薄膜从Fe,Pt原子无序排列的面心立方结构逐渐变化到有序排列的L10相面心四方结构.在此基础上,系统研究了FePt薄膜的化学有序度对磁和磁光性能的影响.随着有序度的增加,FePt薄膜的磁晶各向异性能,以及沿垂直方向的矫顽力、剩磁比均增加,在基板温度高于530 ℃时制备的薄膜中的磁晶各向异性能超过1 J/cm3.同时,还观察到有序FePt合金薄膜的磁光克尔光谱(克尔转角的大小和极值所对应的跃迁光子能量)随化学有序度的显著变化. 关键词: FePt薄膜 化学有序度参数 磁光克尔光谱  相似文献   

15.
Microstructure, static magnetic properties and microwave permeability of sputtered FeCo films were examined. Fe60Co40 films (100 nm in thickness) deposited on glass substrates exhibited in-plane isotropy and a large coercivity of 161.1 Oe. When same thickness films were deposited on 2.5 nm Co underlayer, well-defined in-plane anisotropy was formed with an anisotropy field of 65 Oe. The sample had a static initial permeability of about 285, maximum imaginary permeability of 1255 and ferromagnetic resonance frequency of 2.71 GHz. Cross-sectional TEM image revealed that the Co underlayer had induced a columnar grain structure with grain diameter of 10 nm in the FeCo films. In comparison, FeCo films without Co underlayer showed larger grains of 70 nm in diameter with fewer distinct vertical grain boundaries. In addition, the Co underlayer changed the preferred orientation of the FeCo from (1 0 0) to (1 1 0). The improvement in soft magnetic properties and microwave behavior originates from the modification of the film microstructure, which can be well understood by the random anisotropy theory.  相似文献   

16.
This paper reports that longitudinally oriented CoCrPt thin films with Cr85W15 underlayer and CoCr intermediate layer for use of giant magnetoresistance heads were fabricated by magnetron sputtering. Without CoCr intermediate layer, CoCrPt layer deposited directly on Cr85W15 underlayer which has a dominant (200) texture exhibits unexpected (10\bar {1}1) texture. After introducing CoCr intermediate layer, the CoCrPt layer shifts into (11\bar {2}0) texture. This article studies the crystallographic hetero-epitaxy relationship between magnetic layer and underlayer in order to understand the appearance of CoCrPt (10\bar {1}1) texture on (200) textured Cr underlayer and the influence of CoCr intermediate layer on the inducement of CoCrPt (11\bar {2}0) texture. The CoCr intermediate layer plays a crucial role in controlling the microstructure and consequently the magnetic properties of the overlying magnetic layer.  相似文献   

17.
王强  沈明荣  侯芳  甘肇强 《物理学报》2004,53(7):2373-2377
采用溶胶-凝胶法,在保持薄膜结晶温度和有机物分解温度相同情况下,发现烘烤温度(即溶剂的挥发温度)对镧掺杂钛酸铋薄膜的晶体结构、表面形貌和铁电性质均产生重要影响.在较低烘烤温度下得到的薄膜(117)择优取向明显.但随着烘烤温度增加,薄膜的(117)择优取向逐渐减弱.薄膜的表面晶粒形貌则从棒状逐渐转变为盘状.还测量了薄膜的铁电性质,发现在250℃烘烤温度下得到的薄膜具有最大的剩余极化强度,2Pr为28.4μC/cm2.对实验现象进行了定性解释. 关键词: 溶胶-凝胶法 烘烤温度 铁电薄膜  相似文献   

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