量子点中浅施主的能谱结构

在有效质量近似下，使用线性变分方法计算了处于ＧａＡｓ－Ｇａ_１－ｘＡｌ_ｘＡs球形量子点中不同位置的浅施主杂质的能谱结构，讨论了能级的简并度和不同情况下的能级序，扩展了文献［１０］中所得到的结果。计算结果表明电子结构明显地依赖于量子点的半径和杂质离子所处的位置。计算结果还说明选择合适的基函数对于讨论量子点中问题的重要性。 关键词：     

电场和温度对施主中心量子点中束缚极化子基态寿命的影响

采用Lee-Low-Pines变换和Pekar类型变分法推导出非对称高斯势施主中心量子点中束缚极化子的基态和激发态能量和波函数,进而构造了一量子比特所需的二能级结构。基于费米黄金规则和偶级近似研究了束缚极化子基态的衰变。引入了一个用两态极化子基态衰变时间来量化量子点量子比特退相干时间的量度法,并与极化子激发态衰变时间量化量子点量子比特退相干度量法进行了对照讨论,揭示了二者的相同物理机理。通过研究电场下材料的介电常数比、电声耦合常数和温度对施主中心量子点中束缚极化子基态寿命的影响,揭示了材料属性与环境因素对量子点量子比特退相干的影响。     

氧化锌量子点浅施主能级增强绿色光致发光光谱的实验证明

利用溶胶-凝胶法制备了粒径在5 nm左右的氧化锌量子点,通过测量氧化锌量子点光致发光光谱、吸收光谱以及荧光寿命得到氧化锌量子点绿光光谱可分为两种且对应不同发光机理。较高能量的绿光光谱是电子由导带底跃迁至氧空穴辐射产生的,而较低能量的则归因于电子由浅施主能级跃迁到氧空位,这种浅施主能级能够增强绿光发射且激发光能量稍小于带隙时绿光光谱相对强度达到最大。其次,实验得到氧化锌量子点的蓝光光谱是由于激发电子从锌间隙能级跃迁至价带产生。该研究提出并分析了氧化锌量子点绿光光谱的两种发光机制,可为其在光学方面的应用提供参考。     

自旋对磁量子反点能谱和磁电导的影响

利用分区求解单粒子薛定谔方程的方法,研究了电子自旋对磁量子反点中电子能级和磁电导的影响.结果表明,电子自旋与非均匀磁场的相互作用使电子能级发生劈裂,其特征与均匀磁场中电子自旋引起的劈裂显著不同,磁量子反点中能级的劈裂与角动量量子数密切相关.电子共振隧穿到磁边缘态,导致了磁电导随磁场的非周期性振荡.考虑电子自旋与不考虑电子自旋相比,磁电导谱中谷的数目增多且深度减小. 关键词：     

Donor Centers in a Gaussian Potential

We study a neutral donor center （D^0） and a negatively charged donor center （D^-） trapped by a quantum dot, which is subjected to a Gaussian potential confinement. Calculations are made by using the method of numerical diagonalization of Hamiltonian within the effective-mass approximation. The dependence of the ground state of the neutral shallow donor and the negatively charged donor on the dot size and the potential depth is investigated. The same calculations performed with the parabolic approximation of the Gaussian potential lead to the results that are qualitatively and quantitatively different from each other.     

空间周期磁场中单电子量子点的能谱和磁化强度

研究了在空间周期磁场下,单电子量子点中电子的能谱和基态磁化强度,并对它们随周期磁场的各个参数(B、β、ψ)的变化作了分析.在计算中使用GaAs量子点模型,同时把二维各向同性谐振子的本征态作为基矢.计算发现,β对量子点的影响最大,β较小时,能谱和基态磁化强度与均匀磁场中的结果相似,反之则差别很大.在随β变化的能谱图中,大B较之小B表现出更丰富的谱线信息.当β足够大时,周期磁场对量子点的影响几乎为零.在计算中β越大,则所需的基的最少个数越多,否则计算结果不准确.     

幂次中心势阱中粒子能谱规律的分析

分析了幂次中心势阱中粒子的能谱，讨论了粒子能谱形状随幂次变化的规律     

纤锌矿GaN柱形量子点中类氢施主杂质态

在有效质量近似和变分原理的基础上,选取含两个变分参数的波函数,研究了纤锌矿结构的GaN/AlxGa1-xN单量子点中类氢施主杂质体系的结合能随量子点(QD)尺寸以及杂质在量子点中位置的变化,并与以前使用不同尝试波函数的计算结果进行了比较。结果表明:由我们选取的两变分参数波函数得到的结果与前人选取的两变分参数波函数得到的结果相比有所改进,而与选取一个变分参数波函数得到的结果一致。同时我们还计算了体系的维里定理值随量子点半径的变化情况,所得结果与前人工作结果一致,说明本文选取的两变分参数波函数能很好地描述柱形量子点中施主杂质态的运动。     

能谱曲线的平展与量子混沌

指出了在利用能谱曲线分析量子混沌现象时,除了要做能量平展外,还应对曲线参数作平展处理.通过归一能谱曲线的均方根斜率,给出了一个普适的平展参数变量的方法.另外,如能谱曲线有平均倾斜现象,在参数平展前还应做相应的能量移动使其消除.讨论了经过平展处理后的能谱曲线的曲率与Gaspard-Rice-Mikeska-Nakamura无量纲曲率公式的关系. 关键词：     

半导体量子点的形状对受限激子的影响

在有效质量近似范围内,采用有限深势阱模型,考虑介电受限、计入表面极化效应的情况下,研究了球形、立方形半导体量子点的形状对受限激子的影响．结果表明量子点的形状效应不可忽略. 关键词：     

Binding Energy of D^- and D^0 Centers Confined by Spherical Quantum Dots

We study a negative donor center, a neutral donor in a spherical Gaussian potential quantum dot by using the matrix diagonalization of Hamiltonian within the effective-mass approximation. We calculate the energy E（ D^-） as functions of Gaussian potential size and depth, the same calculations as performed with the parabolic approximation. The dependence of the ground state of the neutral shallow donor and the negatively charged donor on the dot size and the potential depth is investigated.     

Few-electron semiconductor quantum dots with Gaussian confinement

We have performed Hartree-Fock calculations of the electronic structure of N ≤ 10 electrons in a quantum dot modeled with a confining Gaussian potential well. We discuss the conditions for the stability of N bound electrons in the system. We show that the most relevant parameter determining the number of bound electrons is V ₀ R ². Such a feature arises from widely valid scaling properties of the confining potential. Gaussian Quantum dots having N = 2, 5, and 8 electrons are particularly stable in agreement with the Hund rule. The shell structure becomes less and less noticeable as the well radius increases.      

Broadband light emitting from multilayer-stacked InAs/GaAs quantum dots

We report the effect of the GaAs spacer layer thickness on the photoluminescence(PL) spectral bandwidth of InAs/GaAs self-assembled quantum dots(QDs).A PL spectral bandwidth of 158 nm is achieved with a five-layer stack of InAs QDs which has a 11-nm thick GaAs spacer layer.We investigate the optical and the structural properties of the multilayer-stacked InAs/GaAs QDs with different GaAs spacer layer thicknesses.The results show that the spacer thickness is a key parameter affecting the multi-stacked InAs/GaAs QDs for wide-spectrum emission.     

LO-phonon overheating in quantum dots

Longitudinal optical phonons have been used to interpret the electronic energy relaxation in quantum dots and at the same time they served as a reservoir, with which the electronic subsystem is in contact. Such a phonon subsystem is expected to be passive, namely, in a long-time limit the whole system should be able to achieve such a stationary state, in which statistical distributions of both subsystems do not change in time. We pay attention to this property of the LO phonon bath. We show the passivity property of the so far used approximations to electronic transport in quantum dots. Also we show a way how to improve the passivity of LO phonon bath using canonical Lang-Firsov transformation. Presented at the X-th Symposium on Suface Physics, Prague, Czech Republic, July 11–15, 2005.     

水溶性CdTe:Mn量子点的双光子吸收

采用激发波长800 nm、脉宽50 fs、重复频率1 kHz的Ti:sapphire放大飞秒激光器作为激发光源,利用开孔Z扫描技术研究了不同粒径的CdTe:Mn量子点的非线性吸收性质。理论计算结果表明,同一生长时间CdTe:Mn量子点的双光子吸收系数是CdTe量子点的1.1倍,其双光子吸收系数随量子点尺寸的减小而增大,这是由于CdTe:Mn量子点非线性吸收属于反饱和吸收,掺杂了Mn元素,减小了表面缺陷浓度,表明掺杂量子点具有很好的双光子吸收现象。     

Hydrogenic impurity in double quantum dots

The ground state binding energy and the average interparticle distances for a hydrogenic impurity in double quantum dots with Gaussian confinement potential are studied by the variational method. The probability density of the electron is calculated, too. The dependence of the binding energy on the impurity position is investigated for GaAs quantum dots. The result shows that the binding energy has a minimum as a function of the distance between the two quantum dots when the impurity is located at the center of one quantum dot or at the center of the edge of one quantum dot. When the impurity is located at the center of the two dots, the binding energy decreases monotonically.     

Confined states in two-dimensional flat elliptic quantum dots and elliptic quantum wires

The energy spectrum and corresponding wave functions of a flat quantum dot with elliptic symmetry are obtained exactly. A detailed study is made of the effect of ellipticity on the energy levels and the corresponding wave functions. The analytical behavior of the energy levels in certain limiting cases is obtained.     

Nonlocal quantum cloning via quantum dots trapped in distant cavities

A scheme for implementing nonlocal quantum cloning via quantum dots trapped in cavities is proposed.By modulating the parameters of the system,the optimal 1 → 2 universal quantum cloning machine,1 → 2 phase-covariant cloning machine,and 1 → 3 economical phase-covariant cloning machine are constructed.The present scheme,which is attainable with current technology,saves two qubits compared with previous cloning machines.     

A quantum walk in phase space with resonator-assisted double quantum dots

We implement a quantum walk in phase space with a new mechanism based on the superconducting resonator-assisted double quantum dots.By analyzing the hybrid system,we obtain the necessary factors implementing a quantum walk in phase space:the walker,coin,coin flipping and conditional phase shift.The coin flipping is implemented by adding a driving field to the resonator.The interaction between the quantum dots and resonator is used to implement conditional phase shift.Furthermore,we show that with different driving fields the quantum walk in phase space exhibits a ballistic behavior over 25 steps and numerically analyze the factors influencing the spreading of the walker in phase space.     

埋置量子点应力分布的有限元分析

通过衬底材料和外延材料的交替生长方式制备出多层排列的自组装量子点超晶格结构.这些埋置量子点的应力/应变场影响着它们的光电性能、压电性能以及力学稳定性.基于各向异性弹性理论的有限元方法,研究了埋置金字塔形应变自组织Ge/Si半导体量子点的应力/应变分布以及流体静应变和双轴应变分布,并与非埋置量子点的应力/应变分布做了比较,指出了它们之间的异同以及覆盖层对量子点应力/应变分布的影响. 关键词： 量子点 应力分布 应变分布