Inclusive production of φ-mesons in neutron-proton interaction at 30–70 GeV/c

A signal of the-K⁺K^– decays has been observed in neutron-hydrogen interactions at energies of 30–70 GeV in an experiment using the BIS-2 spectrometer. The longitudinal momentum spectrum in the forward region,x _F<0·1 atp _T<1 GeV/c, can be well described by a power law dependence (1–x _F)^N withN=4·28±0·42. Thep _T ² -spectrum has been parametrized by the exp(–Bp _T ² ) law with the exponentB=(3·02±0·55) (GeV/c)^–2. The extrapolation of the measured cross section to the full kinematic region yields a value of (220±85) b in agreement with measurements from the proton beams.     

Nuclear orientation study of the decay of204BiFe

The decay of²⁰⁴Bi nuclei (I =6⁺, T_1/2=11·22 h) oriented in an iron host was investigated on the JINR low-temperature nuclear orientation facility SPIN. The orientation parameterB ₂=1·17 (6) was obtained from the analysis of six prominent E1 gamma-transitions. From the measured normalized intensities of the gamma-rays observed some 70 values of multipole mixing ratios for the gamma-transitions in²⁰⁴Pb nucleus were determined for the first time. The spins 6, 6, 5 and 4 could be uniquely assigned to the²⁰⁴Pb negative parity levels at 3891·5 keV, 3768·4 keV, 3301·5 keV and 2338·2 keV, respectively. The spin-parity assignments of the levels at 4183·8 keV, 4094·2 keV, 3782·0 keV, 2506·9 keV and 2065·1 keV were confirmed as 6^–, 6^–, 5^–, 5^– and 5⁺, respectively. For the level at 3105·1 keV spin-parity 5^– was suggested and spinparity 7^– of the level at 2696·4 keV was called in question. The possible placements of the gammatransitions 3 1351·7 keV and 1353·4 keV in the decay scheme is discussed. The reorientation parameters for the long-living levels at 2264·2 keV (T _1/2=0·45 s) and 1273·9 keV (T _1/2= =265 ns) were determined asG ₂=0·41 (14) andG ₂=0·60 (17), respectively. For the isomeric level at 2185·7 keV (T _1/2=67·2 min) the value ofG ₂=0·88 (49) was proposed.The authors would like to express their thanks to T. I. Kracíková and M. Trhlík for the valuable discussions in the course of the evaluation of the experimental data.     

The dependence of the neutron temperature on the geometric parameter for water and loose diphenyl

The dependence of the neutron temperatureT _n on the geometric parameterB ² was measured by the pulse method in water and loose diphenyl. The measurements were made on a moderator poisoned by cadmium sulphate, a substance whose absorption cross-section is non 1/v.The following results were obtained: For waterT _n [eV]=–(0·00391±0·00045)B ² [cm^–2]+(0·02537±0·00035) for loose diphenyl:T _n [eV]=–(0·01014±0·00152)B ² [cm^–2]+(0·02518±0·00054).We are indebted to J. Jirou and J. Jadavan for their assistance in the measurements, the accelerator operation and electronic apparatus maintenance.     

Nuclear spin lattice relaxation of58CoFe and60CoFe measured by the thermal cycling method

Thermal cycling of thin foil samples is used to measure nuclear spin lattice relaxation of dilute⁵⁸Co and⁶⁰Co in iron at polarizing fields up to 1.3 T. The relaxation rates for the two isotopes differ by a factor of 7.1; the good agreement between the high field values for ² C ₂, (2.93±0.15)·10¹⁵ K·s^–1·T^–2 (⁵⁸Co) and (3.01±0.06)·10¹⁵K·s^–1·T^–2 (⁶⁰Co) verifies the reliability of the experimental method. An enhancement factor model is introduced and shown to give an excellent reproduction of the observed field dependence of the relaxation.     

Anomalous plasma phenomena of hollow cathode arc discharge

Magnetically confined argon plasma produced by hollow cathode arc discharge has been studied in different experimental conditions, with discharge current from 10–50 A, vessel argon pressure between 10^–3 and 10^–4 torr (1 torr=133·32 Pa) and axial magnetic field up to 0·12 T. The plasma density measured by a cylindrical Langmuir probe is found to be 10¹⁹ to 4 × 10¹⁹ m^–3 and the electron temperatureT _e varies between 2·5 and 4·8 eV. When an external axial magnetic field is applied the plasma temperature decreases with the increase in the magnetic field intensity until it reaches a minimum value at 0·075T and then increases with the same rate. This has been interpreted as high frequency waves excitation due to electron beam-plasma interaction, which explains the electron density jumps with the magnetic field intensity. Enhanced plasma transport across the magnetic field is studied and classified as anomalous diffusion.     

Pitfalls in the Use of Common Luminescent Probes for Oxidative and Nitrosative Stress

Lucigenin (LC²⁺, bis-N-methylacridinium) and 2,7-dichlorofluorescin (DCFH₂) are widely used as chemiluminescent or fluorescent probes for cellular oxidative stress, to reflect levels of superoxide (O₂ ^·–) and hydrogen peroxide, respectively. We report mechanistic studies that add to the growing evidence for the unsuitability of either probe except in very well-defined circumstances. The ability for lucigenin to generate superoxide via reduction of LC²⁺ to LC^·+ and redox cycling with oxygen depends on the reduction potential of the LC²⁺/LC^·+ couple. Redox equilibrium between LC^·+ and the redox indicator benzyl viologen is established in microseconds after generation of the radicals by pulse radiolysis and indicated E(LC²⁺/LC^·+) –0.28 V vs. NHE. Reaction of LC^·+ with O₂ to generate O₂ ^·– was also observed directly similarly, occurring in milliseconds, with a rate constant k 3 × 10⁶ M ^–1 s^–1. Quinones act as redox mediators in LC^·+/O₂ redox cycling. Oxidation of DCFH₂ to fluorescent DCF is not achieved by O₂ ^·– or H₂O₂, but NO₂ ^·) reacts rapidly: k 1 × 10⁷ M ^–1 s^–1. Oxidation by H₂O₂ requires a catalyst: cytochrome c (released into the cytosol in apoptosis) is very effective (even 10 nM). Fluorescence reflects catalyst level as much as O₂ ^·–) production.     

Influence of Vibrational Excitation of Triplet Molecules of Anthraquinone on the Photochemical Processes in Gas Mixtures with Amines

By the quenching of the delayed fluorescence (DF) of anthraquinone vapors by aliphatic amines (diethylamine, dibutylamine, cyclohexylamine) and pyridine the photoinduced processes proceeding with the participation of vibrationally excited triplet molecules of anthraquinone have been investigated. The DF quenchingrate constants K _q varying from 1·10⁶ sec^–1·torr^–1 in mixtures with diethylamine to 7·10³ sec^–1·torr^–1 in mixtures with pyridine have been estimated. A correlation between the values of K _q and the ionization potentials of foreign gases confirming the important role of interactions with charge transfer in the quenching of triplet molecules in the gas phase has been established. The influence of other relaxation processes on the DF quenching is considered. It is shown that the intermolecular vibrational relaxation in the T ₁ triplet state leading to the establishment of relaxation equilibrium at a vibrational temperature T _vib considerably increasing the medium temperature is the fastest process among the biomolecular processes (rate constants K _col ^V > 10⁶ sec^–1·torr^–1 > K _q). The values of T _vib and the vibrational energies E _vib of the triplet molecules after the energy exchange in the collisional complex have been estimated. It has been concluded that the photochemical reaction yield is determined by the intermolecular processes proceeding in the T ₁ state at a vibrational equilibrium characterized by high values of T _vib. The influence of E _vib of triplet molecules on the DF quenching rates at a photoinduced electron transfer is considered.     

Decay of Hf172

The internal conversion spectrum of Hf¹⁷² was examined with an intermediate image magnetic spectrometer. The gamma-ray spectrum and gamma-gamma coincidence spectrum were studied by means of scintillation spectrometers. The half-life of the 65·9 keV excited level in Lu¹⁷² was found to beT _1/2 = (3·32±0·20) × 10^–7 sec. The proposed decay scheme is discussed.On the same apparatus the half-life of the 206·25 keV excited level in Re¹⁸⁷ was measured and the result isT _1/2 = (5·05±0·13) × 10^–7 sec.The authors wish to thank to Ing. Vobecký and Ing. Matalka for the separation of Hf and Z. Praáková for assistance in the numerical calculation.     

Electrophysical properties of ionic alloys of GaAs obtained by implanting Zn+ (150 keV) with subsequent annealing at 500–1000°C

A study is made of the electrophysical properties (N_s, _eff) of ionic alloys of GaAs obtained by implanting 150-keV Zn ions at 20 and 300°C. The ion dose D=5·10¹³–10¹⁶ ions/cm²; the alloys were subsequently annealed for 10 min in an H₂ atmosphere with temperatures in the range 500–1000°C. The optimal parameters of the ionic alloys are obtained for T_i=300°C and T_a=700°C. Thermal acceptance of the GaAs under a SiO₂ film (d0.2–0.3 m) is observed for T_a>700°C. The limiting concentration of thermal acceptors N_s(TA)3·10¹³ cm^–2) for T=1000°C and t=10 min.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 22–26, March, 1979.     

Some physical properties of KCl+Pb2+ crystals

This paper presents the results of measurements of the mechanical and electrical properties of as-received pure and lead-doped crystals of potassium chloride. The critical resolved shear stress of the crystals obeys the Franks relationship in the whole concentration range. In addition, the correlation between ₀ and the Vickers hardness numberH was found and the equation is of the form ₀=k (H–H ₀). The solubility of Pb²⁺ in as-received KCl crystals was observed, from measurements of the electrical conductivity, to be low—the successive saturation of the solid solution started already in an environment of 5 mole ppm in agreement with data from the mechanical measurements. The density of cation vacancies and their mobility were represented by the following euqations ₁ T=6·25×10⁴ exp(–·75/kT) cm² K/volt. sec,n ₁=6·95×10²³ exp(–2·12/kT) vacancies/cm³ The value of 0sd46±0·02 eV was found as a rough estimate of the association energy.The authors wish to express their thanks to Professor Dr. J. Z.Damm and Ing. E.Mariani for their stimulating interest in the present work.     

The effect of low-temperature electron irradiation on the transition temperature of YBa2Cu3O7−δ superconductors

Measurements of the complex susceptibility =–i of electron-irradiated YBa₂Cu₃O_7– show a strong influence of the electron irradiation dose, ·t on the transition temperatureT _c . For irradiation doses of ·t=2.2·10¹⁹ e^–/cm² we find a damage rate of T _c /(·t)=–1.6·10^–19 K/(e^–/cm²). It is assumed that the decrease ofT _c is mainly a bulk effect due to the production of atomic defects like vacancies and interstitials in the Cu–O–Cu chains and in the basal planes of the unit cells.     

Electrical properties of p-type ZnGeP2 irradiated by H+ ions

The properties of p-type ZnGeP₂ [p₀=(5–10)·10¹⁰ cm^–3, ₀=(2–5)·10^–7 (·cm)^–1], irradiated with H⁺ ions [E=5 MeV, T_irr=300 K, D=(1·10¹²–1.7·10¹⁶) cm^–2] are studied. An increase in the resistivity (to gr_max - 5·10¹¹ ·cm) and subsequent reduction in for large currents of H⁺ ions ( - 9·10⁸ ·cm for D - 1.7·10¹⁶ cm^–2), is observed in irradiated crystals. The resistivity of irradiated p-type ZnGeP₂ is found to be very sensitive to hydrostatic pressure [(4–5)·10^–5 bar^–1]. The annealing of radiation defects in the temperature interval (20–600) °C is examined.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 91–93, October, 1991.     

Electrical properties of doped 3-tetradecylpolypyrrole/metal devices

The electrical properties of devices made of doped 3-tetradecylpolypyrrole (PPy-C₁₄) thin films sandwiched between indium-tin-oxyde (ITO) and gold metal electrodes are reported. The current density–voltage (J–V) curves are asymmetric and nonlinear implying a non Ohmic rectifying contact. Using standard thermionic emission theory (Schottky) J–V characteristics were satisfactorily fitted with a saturation current of J₀=1.5×10^-5 A cm^-2, a barrier height of ϕ_b=0.7 eV, and an ideality factor of n=5.3. Characteristics from the plot of J–V versus 1/T show that the activation energy of the thermionic emission process is higher below the glass transition temperature of PPy-C₁₄ (T_g=45 °C) than above, which seems to indicate that the hopping conduction process is enhanced at T>T_g. The carrier concentration has been calculated from capacitance–voltage (C-V) measurements (N=1.9×10¹⁷ cm^-3) allowing estimation of the carrier mobility μ=2.6×10^-2 cm² V^-1 s^-1. PACS 73.61.Ph; 73.40.Sx; 73.30.+y     

Nuclear spin relaxation of Xe in liquid Te

By the method of time differential perturbed angular distribution following a nuclear reaction, the relaxation rateT _r ^–1 of the 8 msI =10⁺ isomer of¹³²Xe has been measured in liquid Te. Between 670 °K (supercooled liquid) and 1,000 °K the rate decreases from about 720/s by about a factor of two. From existing experimental material it is concluded thatT _r ^–1 is mainly due to quadrupolar interaction (T _r ^–1 T _Q ^–1 ). Its magnitude is discussed considering the metallic and the noble gas limit as models for the Xe-Te-interactions. The temperature dependenceT _Q(T) apparently does not correlate with the diffusion constant of Te in contrast to a simplified theoretical treatment. — The nuclearg value of the isomer has been determined to be g=(–)0.195(5) thus confirming the configuration (vh_11/2)².     

Investigation of the behaviour of the impurity atoms in Si by μ− SR-method

The dependence of the residual polarization of negative muons in p-type Si on temperature in the 4.2–270 K range has been investigated. Measurements were carried out in external magnetic field of 0.08 T transverse to the muon spin. The impurity concentration in the sample was 2 · 10¹³ cm^–3. Muon spin relaxation was observed at temperatures below 30 K. The relaxation rate atT=30 K is equal to 0.18±0.08s^–1. The relaxation rate grows with the decrease of temperature and at 4.2 K exceeds 30s^–1. The value of the residual polarization at zero timeP(t=0) is constant within the investigated temperature range.In the rangeT<30 K data on the relaxation rate are well described by the dependence =B·T^–q, whereq=2.75. Power dependence of may evidence the essential role of the phonon mechanism in the relaxation of the electron momentum of the acceptor center.The authors express their gratitude to V.B. Brudanin and I.A. Yutlandov for providing the sample, and to Yu.B. Gurov for advices.     

Energy levels of vanadium ions in CdTe

In CdTe doped with vanadium the photoluminescence due to the ³ T ₂(F) ³ A ₂(F) transition of V³⁺(d ²) is detected. Its decay time is determined as (630±20) s, a result comparable to the analogous emissions in various host lattices. Further emissions around 5000 cm^–1 and 9000 cm^–1 are caused by charge-transfer transitions or bound-exciton decay. Excitation and sensitization spectra yield information on the positions of the energy levels within the gap, which are discussed using two different models. At T=4.2 K, the distance of the V²⁺/V³⁺ donor level is 7300 cm^–1 and 5700 cm^–1 referred to the valence and the conduction band edges, respectively. The absence of V²⁺(d ³) centres is tentatively ascribed to the existence of deeply bound excitons.     

Shallow acceptor population and free hole concentration in Si: In and Si:Ga with IR-photoexcitation

Hall measurements at low temperaturesT<50 K have been performed on Si:In (N _In10¹⁷ cm^–3) and Si:Ga (N _Ga10¹⁸ cm^–3) with infrared photoexcitation of holes into the valence band. It is shown in quantitative agreement with a theoretical model that the population of shallow acceptors, e.g. B and Al, which are present as impurities in concentrations ofN _B,Al10¹²-10¹⁴ cm^–3 strongly affects the photoexcited hole concentration. Photo-Hall measurements can, therefore, serve as a tool for the determination of low impurity acceptor concentrations in the case of high In- or Ga-doping. Hole capture coefficientsB _In=6×10^–4 (T/K)^–1,8 cm³ s^–1 andB _Ga=2×10^–4 (T/K)^–1 cm³ s^–1 have been determined.     

The hall effect in PdSi-based amorphous alloys containing Co.

The Hall effect in amorphous Pd₈₀Si₂₀ and Pd_80–x Si₂₀Co _x , wherex=2, 4, 6 (at.% are implied throughout) alloys was investigated. Measurements were carried out at r.t. in fields up to 17·5 kG. Also the electrical conductivity was measured. The Hall effect was found negative in all alloys of the above composition. Observedx-dependence of the Hall constantR _H tends to change the sign of the effect and is interpreted on the assumption that an extraordinary Hall effect manifests itself besides the ordinary one in Co-containing alloys. The value ofR _H for the basal alloy should be looked upon as an evidence of electron transfer from glass-former (Si) to transition metal (Pd) empty d-states. The values ofR _H obtained for the alloys withx=0, 2, 4, 6 are respectively, –7·8; –8·7; –8·3; –5·2 (×10^–5 cm³/A. sec throughout).     

Solubility of Na2Co3 in NaCl:CaCl2 crystals

Measurements of electrical conductivity of NaCl 10^–5 molar fr. CaCl2 (1–80)×10^–5 molar fr. Na₂CO₃ crystals have been used to determine the temperature dependence of the solubility of CO₃-ions over the temperature range from 75 to 530 °C. The total solubility of CO₃-ions and that of [CO ₃ ^2– -vacancy] complexes may be expressed by simple relationships andc _ka=3·19× 10^–2 exp (–0·25 eV/kT), resp. The heat of solution of complexes is equal to 0·25 eV and that of free CO ₃ ^2– ions is higher than 1·2 eV. Under conditions of the thermal equilibrium between the solid solution and precipitate, the ratio of Na₂CO₃ and CaCO₃ components in the precipitate has been calculated at various temperatures and CO₃ concentrations.     

Ionic Synthesis of Ga1–x In x As Solid Solution Films

The Ga_1–x In _x As compound obtained by In-ion implantation (100 keV and (0.45–6)·10¹⁷ cm^–2) followed by thermal (800 °C and 15') or high-energy electron-beam (1 MeV, 0.6 mA·cm^–2, 660 °C, and 16 s) annealing is investigated by Rutherford backscattering, optical absorption, and capacitor photoelectromotive force. It is shown that x increases from 0.07 up to 0.21, and the band gap decreases from 1.34 down to 1.21 eV as the implantation dose increases. The surface potential decreases from 0.79 down to 0.58 V. A high efficiency of electron-beam annealing is pointed out.