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1.
Results of an STM study of dissociative GeH4 adsorption on Si(1 1 1)-(7 × 7) at 300 K show that GeH4 adsorbs under scission of two Ge-H bonds according to GeH4(g) + 4db → GeH2(ad) + 2H(ad). GeH2 binds to two adatom dangling bonds in a bridged configuration, while the two released hydrogen atoms saturate two additional dangling bonds. The GeH4 sticking coefficient under these conditions is 1.2 × 10−6, one order of magnitude smaller than for SiH4.  相似文献   

2.
Formation of the platinum silicides nanostructures and their electronic properties have been studied using scanning tunneling microscopy and scanning tunneling spectroscopy. The investigated structures have been grown by solid state epitaxy upon deposition of the Si atoms (coverage about 0.2 ML) and sequential annealing at temperature range 600-1170 K. The formation of the Pt2Si and PtSi islands was investigated until the Si atoms embedded into the Pt substrate at the 1170 K. The images of the silicides structures and Pt substrates with atomic resolution have been recorded. The evolution of the spectroscopic curves both for substrates and nanostructures, corresponding to the structural and sizes changes, have been shown.  相似文献   

3.
By chemically modifying the FeO(1 1 1) thin film on Pt(1 1 1), we show that it is possible to unambiguously correlate its STM morphology with its underlying structure without recourse to STM simulations. Partial reduction of the oxide surface leads to the formation of triangularly-shaped oxygen vacancy dislocation loops at specific sites in the moiré structure of the film. Their presence allows unambiguous identification of the high-symmetry domains of the moiré structure, whose differing chemical properties govern the templating effect on adsorbed metal atoms, clusters and molecules.  相似文献   

4.
We have investigated the initial stages of the growth of pentacene thin films on the Au(1 0 0) substrate using synchrotron radiation photoelectron spectroscopy (PES), near edge X-ray absorption fine structure (NEXAFS) and scanning tunnelling microscopy (STM). Results indicate a well-ordered structure with the pentacene molecules adopting a predominantly flat orientation with respect to the substrate for coverages of less than three monolayers. NEXAFS and photoemission data indicates the presence of a second molecular orientation for thicker films, with the introduction of a slight tilting away from planar bonding geometry at higher pentacene coverages. STM images of coverages less than three monolayers indicate a well-ordered pentacene structure allowing for the calculation of pentacene unit cell parameters. The pentacene molecular rows adopt a side-by-side bonding arrangement on the surface. For pentacene deposited at room temperature, step edges were observed to act as nucleation centres for film growth. Annealing of the substrate to 373 K was found to remove excess molecules and improve film quality, but did not otherwise change the bonding geometry of the pentacene with respect to the surface.  相似文献   

5.
We studied the low temperature (T ? 130 K) growth of Ag on Si(0 0 1) and Si(1 1 1) flat surfaces prepared by Si homo epitaxy with the aim to achieve thin metallic films. The band structure and morphology of the Ag overlayers have been investigated by means of XPS, UPS, LEED, STM and STS. Surprisingly a (√3 × √3)R30° LEED structure for Ag films has been observed after deposition of 2-6 ML Ag onto a Si(1 1 1)(√3 × √3)R30°Ag surface at low temperatures. XPS investigations showed that these films are solid, and UPS measurements indicate that they are metallic. However, after closer STM studies we found that these films consists of sharp Ag islands and (√3 × √3)R30°Ag flat terraces in between. On Si(0 0 1) the low-temperature deposition yields an epitaxial growth of Ag on clean Si(0 0 1)-2 × 1 with a twinned Ag(1 1 1) structure at coverage’s as low as 10 ML. Furthermore the conductivity of few monolayer Ag films on Si(1 0 0) surfaces has been studied as a function of temperature (40-300 K).  相似文献   

6.
A well-defined CeOx/Pt(1 1 1) model catalytic system has been fabricated using the self-assembling of Ce adatoms on a Pt(1 1 1) surface with a subsequent oxidation of the nucleating Ce submonolayer (0.3 ML). The resulting system of the “inverse supported catalyst” type consists of CeOx nanoformations (2D islands of 5-15 nm size and ∼0.3 nm in height) more or less uniformly distributed over the Pt(1 1 1) surface. This CeOx/Pt(1 1 1) system has been tested in the CO oxidation reaction where both the CO2 production rate and the Ce oxidation state were monitored in situ. An enhanced reactivity and a remarkable shift of the bistable region of the reaction towards higher CO pressures were observed when compared to a clean Pt(1 1 1) surface. The CeOx islands exhibit a pronounced redox behaviour that follows the hysteresis cycle of the reaction. The usefulness of such a type of the “inverse model catalyst” for studying the oxygen diffusion supply and the redox behaviour of ceria in the ceria-platinum catalysts is demonstrated.  相似文献   

7.
Geometric and electronic structures of Sm adlayers on Cu(1 0 0) and (1 1 0) were studied by scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). The present results, in addition to the previous results for Sm/Cu(1 1 1) [Y. Nakayama, H. Kondoh, T. Ohta, Surf. Sci. 552 (2004) 53], indicate that the valence state of Sm adsorbed on Cu surfaces is determined by Sm-Sm and Sm-Cu coordination numbers. We propose that the valence state of the adsorbed Sm atoms can be explained by a simple thermodynamic equation including the coordination numbers.  相似文献   

8.
Weixin Huang 《Surface science》2006,600(4):793-802
The interaction of atomic hydrogen with thin epitaxial FeO(1 1 1) and Fe3O4(1 1 1) films was studied by TDS, XPS and LEED. On the thin, one Fe-O bilayer thick FeO film, partial reduction occurs in two steps during exposure. It ends after removal of 1/4 monolayer (ML) of oxygen with a 2 × 2 pattern appearing in LEED. This FeO0.75 film is passive against further reduction. The first reduction step saturates after removal of ∼0.2 ML and shows autocatalytic kinetics with the oxygen vacancies formed during reduction causing acceleration. The second step is also autocatalytic and is related with reduction to the final composition and an improvement of the 2 × 2 order. A structure model explaining the two-step reduction is proposed. On the thick Fe3O4 film, irregular desorption bursts of H2O and H2 were observed during exposure. Their occurrence appears to depend on the film quality and thus on surface order. Because of the healing of reduction-induced oxygen vacancies by exchange of oxygen or iron with the bulk, a change of the surface composition was not visible. The existence of partially reduced oxide phases resistant even to atomic hydrogen is relevant to the mechanism of dehydrogenation reactions using iron oxides as catalysts.  相似文献   

9.
The adsorption of perylene-3,4,9,10-tetracarboxylic-3,4,9,10-diimide (PTCDI) on Au(1 1 1) has been studied using synchrotron-based X-ray photoelectron spectroscopy and in situ scanning tunnelling microscopy. Direct topographic and surface coverage information provided by the scanning probe measurements have enabled us to correlate peaks in the relatively complex carbon core-level photoemission to interactions of the surface with different parts of the PTCDI molecule. A strong interaction between the imide ends of the molecule with the underlying gold substrate is evidenced by a large chemical shift in the imide carbon peaks, which is observed only for the first adsorbed layer.  相似文献   

10.
The adsorption process, molecular arrangement and protonation behavior of self-assembled monolayers (SAMs) of bipyridine thiol on Au(1 1 1) were investigated using X-ray photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM), with a view towards constructing a molecular ion sensor. When the bipyridine SAMs were immersed in a strong CF3SO3H solution for protonation of the bipyridine group, additional N(1s) XPS peaks were generated at higher binding peak positions where the origin of the peak was considered to be the N-H species. We further investigated the relationship between the immersion time for the SAMs and the probability of protonation. We observed a decrease in the probability of protonation with a longer immersion time for the SAMs. We consider that both the bipyridine molecular arrangements and the molecular density on the Au surface are crucial for controlling the probability of protonation based on the STM and XPS data.  相似文献   

11.
We have studied the surface dynamics of a double-strand decanucleotide (HS-10ATL) with 10 adenine-thymine base pairs linked to a Au(1 1 1)-electrode surface via a hexamethylene thiol linker. The study is based on a combination of voltammetry, interfacial capacitance data, electrochemical in situ scanning tunnelling microscopy, and X-ray photoelectron spectroscopy. The thymine bases of the oligonucleotide are connected to furanoses locked in a C3′-endo configuration called LNA (locked nucleic acid). Hybridization in solution is effected prior to linking to the Au(1 1 1)-surface. The melting point of the linker-free locked decanucleotide, 10ATL is >63 °C. However, voltammetric reductive desorption of the adsorbed thiol-modified double-strand decanucleotide, HS-10ATL, gives almost the same charge as single-strand HS-10A, 29 ± 3 and 27 ± 5 μC cm−2, respectively. In situ STM after HS-10ATL-immobilization also gives images showing highly ordered domains, virtually indistinguishable from those of immobilized HS-10A. X-ray photoelectron spectroscopy gives an N/P ration of 5.0 for HS-10ATL in line with the expected value for single-strand HS-10A (5.0).All three sets of data suggest that HS-10ATL hybridized in solution is significantly dissociated on binding to the Au(1 1 1)-electrode surface. This points to an adsorption mechanism in which a stable high density of Au-S bonds is achieved but at the expense of significant unzipping of the more voluminous duplex form.  相似文献   

12.
The self-assembly of 1-alkanethiols, CH3(CH2)n−1SH (n=2-16), on Ag(1 1 1) film initially covered with a native oxide monolayer and that on a chloride-covered Ag(1 1 1) were comparatively studied by X-ray photoelectron spectroscopy and scanning tunneling microscopy. The native oxide monolayer was readily substituted completely by thiolates irrespective of chain length, leading to a dense (√7×√7)R19.1° monolayer for n<3, or a distorted (√7×√7)R19.1° structure for n>3 accompanied by distinct island and fine domain structures previously reported by other groups. In contrast, the chloride-to-thiolate conversion was far from complete for long alkanethiols (n?8), and at sufficiently high conversion temperature (>50 °C), we found a highly stable mixed thiolate-chloride monolayer with a well-defined 2:1 S/Cl atomic ratio, suggesting the occurrence of a mixed (√7×√7)R19.1° adlayer ordering. The combined effects of substrate-molecule and intermolecular interactions behind these contrastive phenomena are discussed.  相似文献   

13.
III-V semiconductor compound structures are widely applied in technology of advanced microelectronics, optoelectronics, and gas sensors. In this paper, we report on the use of XPS to characterize in situ the interaction of thermally activated hydrogen atoms and hydrogen molecules with InP(1 0 0) surfaces covered by thin InN overlayers. XPS spectra were taken with an ESCALAB-210 spectrometer after repeated hydrogenation cycles at temperatures up to 350 °C. The evolution of the In 3d, In 4d, P 2p, N 1s, O 1s and C 1s photoelectron spectra was carefully monitored. The XPS spectra of the hydrogen exposed surface revealed significant differences compared to those from the non-hydrogenated surface. InN films were found to be weakly reactive to hydrogen under experimental conditions explored. The behavior of P atoms at the hydrogenated surface was dependent on the parameters characterizing each hydrogenation (exposure, hydrogen species used, annealing temperature). Moreover, the heavily hydrogenated surface exhibited a phosphorus enrichment.  相似文献   

14.
The growth and the crystalline and electronic structure of Ni deposited on single crystalline Cu(1 1 1) were studied by scanning tunnelling microscopy (STM), grazing incidence X-ray diffraction (GIXD) and angle-resolved photoemission spectroscopy (ARPES). In the early stages of growth monoatomic-high flat Ni islands, partially covered by Cu migrating from the surface, are observed. Starting from a pseudomorphic epitaxial relationship the in-plane lattice parameter progressively relaxes with increasing coverage. For a 20 monolayer (ML) thick deposit the in-plane lattice parameter is still found halfway between the bulk Ni and Cu lattice parameters. ARPES data also rule out the layer-by-layer growth and provide the values of the Ni exchange splitting.  相似文献   

15.
Qiang Fu  Thomas Wagner 《Surface science》2007,601(5):1339-1344
The growth of ultrathin Cr overlayers on SrTiO3(1 0 0) was studied by X-ray photoelectron spectroscopy, scanning tunneling microscopy, and transmission electron microscopy. It is found that the metal-oxide interaction strongly depends on the deposition temperature. At T < 600 °C, the interfaces are atomically sharp. Local charge transfer happens between the interfacial Cr adatoms and the topmost substrate atoms. The binding energy shift of Cr 2p is dominated by the final state effects. In case of T > 600 °C, bulk diffusion of oxygen in the oxide substrate may occur, which results in a redox reaction and the formation of new reaction phases at the interfaces. In this temperature regime, the binding energy shift of Cr 2p is mainly controlled by the initial state effects.  相似文献   

16.
Atomic oxygen resulting from the dissociation of O2 on Pd(1 1 1) at low coverage was studied in a variable temperature scanning tunneling microscope (STM) in the range from 30 to 210 K. Oxygen atoms, which typically appear as 30-40 pm deep depressions on Pd(1 1 1), occupy fcc hollow sites and form ordered p(2 × 2) islands upon annealing above 180 K. The mobility of the atoms diminishes rapidly below 180 K, with an approximate diffusion barrier of 0.4-0.5 eV. Oxygen atom pairs produced by thermal dissociation of O2 at 160 K occupy both fcc and hcp hollow sites. The atoms travel approximately 0.25 nm after dissociation, and the distribution of pairs is strongly influenced by the presence of subsurface impurities within the Pd sample. At much lower temperatures, the STM tip can dissociate oxygen molecules. Dissociation occurs at sample bias voltages exceeding approximately 0.1 V. Following tip-induced dissociation, the product atoms occupy only fcc hollow sites. Oxygen atoms can be manipulated via short range repulsive interactions with the STM tip.  相似文献   

17.
Tunneling electrons in a scanning tunneling microscope were used to excite specific vibrational quantum states of adsorbed water and hydroxyl molecules on a Ru(0 0 0 1) surface. The excited molecules relaxed by transfer of energy to lower energy modes, resulting in diffusion, dissociation, desorption, and surface-tip transfer processes. Diffusion of H2O molecules could be induced by excitation of the O-H stretch vibration mode at 445 meV. Isolated molecules required excitation of one single quantum while molecules bonded to a C atom required at least two quanta. Dissociation of single H2O molecules into H and OH required electron energies of 1 eV or higher while dissociation of OH required at least 2 eV electrons. In contrast, water molecules forming part of a cluster could be dissociated with electron energies of 0.5 eV.  相似文献   

18.
We have used the Bi(0 0 0 1)/Si(1 1 1) template to grow highly ordered C60 epitaxial thin films and analyzed them using scanning tunneling microscopy and low-energy electron microscopy. The in situ low-energy electron microscope investigations show that the initial nucleation of the C60 islands on the surface takes place at surface defects, such as domain boundaries and multiple steps. The in-plane lattice parameters of this C60 film turns out to be the same as that of the bulk fcc(1 1 1) C60. The line-on-line epitaxial structure is realized in spite of a weak interaction between the C60 molecules and Bi(0 0 0 1) surface, while scanning tunneling spectroscopy indicates that there is a negligible charge transfer between the molecules and the surface.  相似文献   

19.
We report on the growth of ultrathin epitaxial Co films on Fe(1 1 0) examined by scanning tunneling microscopy and spectroscopy (STM and STS). At room temperature Co forms pseudomorphic, ideally ordered body-centered cubic (bcc) layers for the first two monolayers as confirmed by atomically resolved STM images. This is in contrast to the related case of Co/Cr(1 1 0) where a superstructure occurs in the second layer. The third monolayer forms a close-packed structure and causes a transformation of the buried second monolayer into a close-packed structure. The Fe(1 1 0) substrate strongly influences the electronic structure of the first Co monolayer as concluded from the dI/dU spectra. This influence is less important for the second monolayer. The measured local density-of-states function for the bcc Co double layer is in agreement with theoretical predictions for bcc Co.  相似文献   

20.
An ordered (√19 × √19)R23.4°-Ge/Pt(1 1 1) surface alloy can be formed by vapor depositing one-monolayer Ge on a Pt(1 1 1) substrate at room temperature and subsequently annealing at 900-1200 K. The long-range order of this structure was observed by low energy electron diffraction (LEED) and confirmed by scanning tunneling microscopy (STM). The local structure and alloying of vapor-deposited Ge on Pt(1 1 1) at 300 K was investigated by using X-ray Photoelectron Diffraction (XPD) and low energy alkali ion scattering spectroscopy (ALISS). XPS indicates that Ge adatoms are incorporated to form an alloy surface layer at ∼900 K. Results from XPD and ALISS establish that Ge atoms are substitutionally incorporated into the Pt surface layer and reside exclusively in the topmost layer, with excess Ge diffusing deep into the bulk of the crystal. The incorporated Ge atoms at the surface are located very close to substitutional Pt atomic positions, without any corrugation or “buckling”. Temperature Programmed Desorption (TPD) shows that both CO and NO adsorb more weakly on the Ge/Pt(1 1 1) surface alloy compared to that on the clean Pt(1 1 1) surface.  相似文献   

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