Structural and optical analysis of 60Co gamma-irradiated thin films of polycrystalline Ga10Se85Sn5

The present study focuses on the effects of gamma irradiation on structural and optical properties of polycrystalline Ga₁₀Se₈₅Sn₅ thin films with a thickness of ～300?nm deposited by the thermal evaporation technique on cleaned glass substrates. X-ray diffraction patterns of the investigated thin films show that crystallite growth occurs in the orthorhombic phase structure. The surface study carried out by using the scanning electron microscope (SEM) confirms that the grain size increases with gamma irradiation. The optical parameters were estimated from optical transmission spectra data measured from a UV–vis-spectrophotometer in the wavelength range of 200–1100?nm. The refractive index dispersion data of the investigated thin films follow the single oscillator model. The estimated values of static refractive index n₀, oscillator strength E_d, zero frequency dielectric constant ε₀, optical conductivity σ_optical and the dissipation factor increases after irradiation, while the single oscillator energy E_o decreases after irradiation. It was found that the value of the optical band gap of the investigated thin films decreases and the corresponding absorption coefficient increases continuously with an increase in the dose of gamma irradiation. This post irradiation changes in the values of optical band gap and absorption coefficient were interpreted in terms of the bond distribution model.     

Optical absorption and spectrophotometric studies on the optical constants and dielectric of poly (o-toluidine) (POT) films grown by spin coating deposition

In this work, a poly(o-toluidine) “POT” was synthesized by chemical oxidative polymerization method in aqueous media. High uniform and good adhesion thin films of POT have been successfully deposited by the spin coating technique. The films were characterized by X-ray diffraction (XRD) and Fourier transforms infrared (FTIR) spectroscopy. The XRD pattern of the POT shows the semi-crystalline nature of the films. FTIR studies show the information of functional groups in POT. The optical transmittance and reflectance of POT film was measured in the 200–2500 nm wavelength range. The absorption coefficient analysis shows that the optical band gaps of POT film are direct allowed transition band gaps with 1.2 and 2.6 eV. Other optical absorption parameters such as extinction molar coefficient, oscillator strength and electric dipole strength were also calculated. The dispersion parameters were determined and discussed based on the single oscillator model. According to the analysis of dispersion curves some important parameters such as dispersion energy (E_d), oscillator energy (E_o), high frequency dielectric constant ₍ε_∞) and lattice dielectric constant (ε_L) were also evaluated. Discussion of the obtained results and their comparison with the previous published data were also given. The obtained desirable results of POT thin film can be useful for the optoelectronic applications.     

Synthesis of CdZnO thin film as a potential candidate for optical switches

Cadmium doped zinc oxide thin films have been prepared using a thermal decomposition technique. The influence of Cd as a doping agent on the structure, optical and nonlinear optical properties was carefully investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM) and a UV-vis spectrophotometer. A deep correlation has been found between the surface roughness and the optical properties. The roughness is found to deteriorate the nonlinear response, such that the highest nonlinear susceptibility χ⁽³⁾ is obtained for the smoothest layer. The third-order nonlinear susceptibility χ⁽³⁾ has been calculated using the Frumer model, and is estimated to be 3.37×10⁻¹⁰ esu. The dispersion of the refractive index of the prepared thin film is shown to follow the single electronic oscillator model. From the model, the values of oscillator strength (E_d), oscillator energy (E_o) and dielectric constant (ε_∞) have been determined. The conductivity has been measured as a function of the energy of the photons, revealing marginal change at energies below 3.15 eV, while above this value there is a large increase in the conductivity. This suggests that CdZnO is a potential candidate for applications in optical devices such as optical limiter and optical switching.     

Thickness dependent optical dispersion parameters and nonlinear optical properties of nanostructured Cr doped CdO thin films

Cr doped CdO thin films were deposited on glass substrates by reactive DC magnetron sputtering with varying film thickness from 250 to 400 nm. XRD studies reveal that the films exhibit cubic structure with preferred orientation along the (2 0 0) plane. The optical transmittance of the films decreases from 92 to 72%, whereas the optical energy band gap of the films decreased from 2.88 to 2.78 eV with increasing film thickness. The Wemple–DiDomenico single oscillator model has been used to evaluate the optical dispersion parameters such as dispersion energy (E_d), oscillator energy (E_o), static refractive index (n_o) and high frequency dielectric constant (ε_∞). The nonlinear optical parameters such as optical susceptibility (χ⁽¹⁾), third order nonlinear optical susceptibility (χ⁽³⁾) and nonlinear refractive index (n₂) of the films were also determined.     

Electrosynthesis and characterization of CdSe thin films: Optimization of preparative parameters by photoelectrochemical technique

CdSe thin films have been electrodeposited potentiostatically onto stainless-steel and fluorine-doped tin oxide-coated glass substrates from an aqueous acidic bath using cadmium acetate ((CH₃COO)₂Cd·2H₂O) as a Cd ion source. Preparative parameters such as deposition potential, solution concentration, bath temperature, pH of the electrolytic bath and deposition time have been optimized by using photoelectrochemical (PEC) technique to obtain well adherent and uniform thin films. The electrodeposits were dark brown in colour. The films have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical absorption techniques. XRD studies reveal that films are polycrystalline, with hexagonal crystal structure. SEM shows that the films are compact, with spherical grains. Optical absorption studies reveal that the material exhibits a direct optical transition having band gap energy ∼1.72 eV. PEC study shows that the films are photoactive.     

Structural and optical properties of thermal evaporated magnesium phthalocyanine (MgPc) thin films

X-ray powder diffraction (XRD) of MgPc indicated that the material in the powder form is polycrystalline with monoclinic structure. Miller indices, h k l, values for each diffraction peak in XRD spectrum were calculated. Thermal evaporation technique was used to deposit MgPc thin films. The XRD studies were carried out for MgPc thin films where the results confirm the amorphous nature for the as-deposited films. While, polycrystalline films orientated preferentially to (1 0 0) plane with an amorphous background were obtained for films annealed at 623 K for 3 h. Optical properties of MgPc thin films were characterised by using spectrophotometric measurements of transmittance and reflectance in the spectral range from 190 to 2500 nm. The refractive index, n, and the absorption index, k, were calculated. According to the analysis of dispersion curves, the parameters, namely; the optical absorption coefficient (α), molar extinction coefficient (?_molar), oscillator energy (E_os), oscillator strength (f), and electric dipole strength (q²) were also evaluated. The recorded absorption measurements in the UV-vis region show two well defined absorption bands of phthalocyanine molecule; namely the Q-band and the Soret (B-band). The Q-band showed its splitting characteristic (Davydov splitting), and ΔQ was obtained as 0.15 eV. The analysis of the spectral behaviour of the absorption coefficient (α), in the absorption region revealed indirect transitions. The transport and the near onset energy gaps were estimated as respectively 2.74 ± 0.02 and 1.34 ± 0.01 eV.     

Effects of different deposition conditions on the properties of Cu2S thin films

Cu₂S thin films deposited on glass substrate by chemical bath deposition were studied at different deposition temperatures and times. The results of X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive X-ray analysis (EDX), the Hall Effect measurement system and UV-Vis absorption spectroscopy indicate that both deposition temperature and time are important to obtain polycrystalline thin films. XRD showed that the polycrystalline Cu₂S thin films have monoclinic structure. Meanwhile, the structural variations were analyzed using SEM. EDX analysis results of the thin film showed that the atomic ratio of Cu/S was close to 2:1. It was found from the Hall Effect measurement that the resistivity varied from 4.59?×?10^?3 to 13.8?×?10^?3 (Ω?cm). The mobility values of the Cu₂S thin films having p-type conductivity varied from 15.16 to 134.6?cm²/V.s. The dark electrical resistivity measurements were studied at temperatures in the range 303–423?K. The electrical activation energies of Cu₂S thin films were calculated by using Arrhenius plots, from which two different activation energy values are estimated for each thin film. Using UV-Vis absorption spectroscopy (Ultraviolet/visible), the direct and indirect allowed optical band gap values were determined to lie between 2.16 and 2.37?eV and 1.79 and 1.99?eV, respectively. In addition, the values of the refractive index (n) and the extinction coefficient (k) were determined.     

Structural, morphological and optical properties of CuAlS2 films deposited by spray pyrolysis method

The structural, morphological and optical properties of CuAlS₂ films deposited by spray pyrolysis method have been investigated. CuAlS₂ in the form of films is prepared at different deposition conditions by a simple and economical spray pyrolysis method. The structural, surface morphology and optical properties of the films were analyzed by X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscope (AFM) and absorbance spectra, respectively. The films were polycrystalline, crystallized in a tetragonal structure, and are preferentially orientated along the (1 1 2) direction. Grain size values, dislocation density, and d% error of CuAlS₂ films were calculated. The optical band gap of the CuAlS₂ film was found to be 3.45 eV. The optical constants such as refractive index, extinction coefficient and dielectric constants of the CuAlS₂ film were determined. The refractive index dispersion curve of the film obeys the single oscillator model. Optical dispersion parameters E_o and E_d developed by Wemple-DiDomenico were calculated and found to be 3.562 and 12.590 eV.     

Structural, absorption and optical dispersion characteristics of rhodamine B thin films prepared by drop casting technique

The drop casting technique has been successfully used to deposit highly uniform and good adhesion rhodamine B (Rh.B) thin films. The structural and morphological properties of Rh.B were studied by X-ray diffraction (XRD), and transmission electron microscopy (TEM), respectively. The molecular structure and electronic transitions of Rh.B were investigated by Fourier-transform infrared (FTIR) and ultraviolet-visible-near infrared (UV-VIS-NIR) spectra, respectively. The calculated Stokes shift between the excitation and emission of Rh.B reflects the displacement in potential surface between the ground and the excited states. The important absorption parameters such as molar extinction coefficient (ε_molar), the oscillator strength (f), and the electric dipole strength (q²) were also reported. The analysis of the spectral behavior of the absorption coefficient in the intrinsic absorption region reveals an indirect allowed transition with a band gap of 1.97 eV and associated phonons of 75 meV. The dispersion of the refractive index is discussed in terms of the single oscillator Wemple-Didomenico (WD) model. The single oscillator energy (E_o), the dispersion energy (E_d), the high frequency dielectric constant (ε_∞), the lattice dielectric constant (ε_L) and the ratio of the free charge carrier concentration to the effective mass (N / m^?) were estimated. From the optical constants analysis, the optical conductivity, volume and surface energy loss functions could also be calculated.     

Optical characterization of poly (ethylene oxide)/zinc oxide thin films

The optical characterization of poly (ethylene oxide)/zinc oxide thin films has been done by analyzing the absorption spectra in the spectral wavelength region 380–800 nm using a ultraviolet-spectrophotometer at room temperature. Thin film polymer composites made of poly (ethylene oxide) (PEO) containing zinc oxide (ZnO) filler concentrations (0%, 2%, 6%, 10%, and 14%) by weight were used in this study. The optical results obtained were analyzed in terms of the absorption formula for non-crystalline materials. The optical energy gap and other basic optical constants such as dielectric constants and optical conductivity were investigated and showed a clear dependence on the ZnO filler concentration. It was found that the optical energy gap for the composite films is less than that for the neat PEO, and that it decreases as the ZnO concentration increases. Enhancement of the optical conductivity was observed with increase in the ZnO concentration. Dispersion of refractive index was analyzed using the Wemple–DiDomenico single oscillator model. The refractive index (n), extinction coefficient (k), and dispersion parameters (E_o, E_d) were calculated for the investigated films.     

Effect of gamma irradiation on the optical properties of nano-crystalline InP thin films

Thin films of InP were prepared onto glass and quartz substrates using laser ablation technique. Some of the prepared films were irradiated using a ⁶⁰Co γ -ray source irradiation with a total dose of 100 kGy at room temperature. The as deposited and irradiated films were identified by scanning electron microscopy, SEM and X-ray diffraction, XRD. The SEM images have shown a nano-flower like structure for the as deposited films and influenced by the irradiation dose. The Optical characterizations of the as deposited and irradiated InP films were studied using spectrophotometric measurements of transmittance T(λ) and reflectance, R(λ) at normal incidence of light in the spectral range from 200 nm to 2500 nm. The refractive index, n, and the absorption index, k values were calculated using a modified computer program based on minimizing (ΔT)² and (ΔR)² simultaneously, within the desired accuracy. Analysis of the dispersion of the refractive index in the range 900 ≤ λ ≤ 2500 was discussed in terms of the single oscillator model. The optical parameters, such as the dispersion energy, E_d, the oscillator energy, E_o, the high frequency dielectric constant, _∞ and the lattice dielectric constant, _L were evaluated for the as deposited and irradiated films. The allowed optical transitions were found to be direct for the as deposited and irradiated films with energy gaps of 1.35 eV and 1.54 eV, respectively.     

Topological,morphological and optical properties of Gamma irradiated Ni (II) tetraphenyl porphyrin thin films

Thermal evaporation technique was used to prepare NiTPP Thin films at room temperature. The prepared films were divided into two groups; the first group was as-deposited films, and the second group was irradiated in gamma cell type ⁶⁰Co source at room temperature with total absorbed dose of 150 kGy in air. All films were identified by X-ray diffraction (XRD), Fourier-transform infrared (FTIR), scanning electron microscopy (SEM), atomic force microscopy (AFM) and transmission electron microscopy (TEM) before and after exposed to gamma radiation. The spectrophotometric measurement of transmittance and reflectance were used to investigate the optical properties at normal incidence of light in the wavelength range 200–2500 nm for as-deposited and gamma-irradiated films. Optical constants (refractive index n, and absorption index k) of as-deposited and irradiated films have been obtained in the wavelength range 200–2500 nm for all the samples. The single oscillator energy (E_o), the dispersion energy (E_d), the high frequency dielectric constant (ε_∞), the lattice dielectric constant (ε_L) and the ratio of the free charge carrier concentration to the effective mass (N/m^?) were estimated for each group. The absorption analysis has been also performed to determine the type of electronic transition and the optical energy gap.     

Preparation and characterization of electrodeposited Sb2Se3 thin films from non-aqueous media

Semiconducting Sb₂Se₃ thin films have been prepared onto the stainless steel and fluorine doped tin oxide coated glass substrates from non-aqueous media using an electrodeposition technique. The electrodeposition potentials for different bath compositions and concentrations of solution have been estimated from the polarization curves. SbCl₃ and SeO₂ in the volumetric proportion as 1:1 with their equimolar solution concentration of 0.05 M form good quality films. The films are characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and optical absorption techniques. The SEM studies show that the film covers the total substrate surface with uneven surface morphology. The XRD patterns of the films obtained by varying compositions and concentrations show that the as-deposited films are polycrystalline with relatively higher grain size for 1:1 composition and 0.05 M concentration. The optical band gap energy for indirect transition in Sb₂Se₃ thin films is found to be 1.195 eV.     

Effect of incorporating nonlanthanoidal indium on optical properties of ferroelectric Bi4Ti3O12 thin films

Bi₄Ti₃O₁₂ (BTO) and Bi_3.25In_0.75Ti₃O₁₂ (BTO:In) thin films were prepared on fused quartz and LaNiO₃/Si (LNO) substrates by chemical solution deposition (CSD). Their microstructures, ferroelectric and optical properties were investigated by X-ray diffraction, scanning electron microscope, ferroelectric tester and UV-visible-NIR spectrophotometer, respectively. The optical band-gaps of the films were found to be 3.64 and 3.45 eV for the BTO and BTO:In films, respectively. Optical constants (refractive indexes and extinction coefficients) were determined from the optical transmittance spectra using the envelope method. Following the single electronic oscillator model, the single oscillator energy E₀, the dispersion energy E_d, the average interband oscillator wavelength λ₀, the average oscillator strength S₀, the refractive index dispersion parameter (E₀/S₀), the chemical bonding quantity β, and the long wavelength refractive index n_∞ were obtained and analyzed. Both the refractive index and extinction coefficient of the BTO:In films are smaller than those of the BTO films. Furthermore, the refractive index dispersion parameter (E₀/S₀) increases and the chemical bonding quantity β decreases in the BTO and BTO:In films compared with those of bulk.     

Chemical spray pyrolysis of β-In2S3 thin films deposited at different temperatures

In₂S₃ thin films were deposited onto indium tin oxide-coated glass substrates by chemical spray pyrolysis while keeping the substrates at different temperatures. The structures of the sprayed In₂S₃ thin films were characterized by X-ray diffraction (XFD). The quality of the thin films was determined by Raman spectroscopy. Scanning electron microscopy (SEM) and atomic force microscopy were used to explore the surface morphology and topography of the thin films, respectively. The optical band gap was determined based on optical transmission measurements. The indium sulfide phase exhibited a preferential orientation in the (0, 0, 12) crystallographic direction according to the XRD analysis. The phonon vibration modes determined by Raman spectroscopy also confirmed the presence of the In₂S₃ phase in our samples. According to SEM, the surface morphologies of the films were free of defects. The optical band gap energy varied from 2.82 eV to 2.95 eV.     

The relationship between refractive index-energy gap and the film thickness effect on the characteristic parameters of CdSe thin films

CdSe thin films were deposited on glass substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) method at room temperature and ambient pressure. The relationship between refractive index and energy bandgap was investigated. The film thickness effect on the structural, morphological, optical and electrical properties of CdSe thin films was investigated. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that all the films exhibit polycrystalline nature with hexagonal structure and are covered well with glass substrates. The crystalline and surface properties of the films improved with increasing film thickness. The optical absorption studies revealed that the films are found to be a direct allowed transition. The energy bandgap values were changed from 1.93 to 1.87 eV depending on the film thickness. The electron effective mass (m_e^?/m_o), refractive index (n), optical static and high frequency dielectric constant (ε_o, ε_∞) values were calculated by using the energy bandgap values as a function of the film thickness. The resistivity of the films changed between 10⁶ and 10² Ω-cm with increasing film thickness at room temperature.     

Characterization of In/Pd and Pd/In/Pd thin films by ellipsometric, XRD and AES methods

In/Pd and Pd/In/Pd thin films were prepared by thermal evaporation on the SiO₂ substrate in a vacuum. The structural and optical properties of the films were investigated by means of X-ray diffractometry (XRD), Auger electron spectroscopy (AES) and spectroscopic ellipsometry (SE). Auger depth profile studies were performed in order to determine the composition of elements in the Pd-In systems. Interdiffusion of metals was detected at room temperature. Optical properties of Pd-In composite layers formed due to the interdiffusion were derived from ellipsometric quantities Ψ and Δ measured in the photon energy range 0.75-6.50 eV at different angles of incidence. The effective optical spectra show absorption peaks dependent on the composition of nonuniform films. The XRD patterns indicated formation of Pd_1−xIn_x intermetallic phases in the samples.     

Structural and optical studies of thermally evaporated CoPc thin films

The structure of the thermally evaporated cobalt phthalocyanine (CoPc) thin film in the β-form is investigated, and shows a single strong peak indicating preferential orientation in the (1 0 0) direction. Some structural parameters such as crystallite grain size, dislocation density and the number of crystallites per unit surface area are determined.The spectral parameters are determined by applying the electronic orbital transitions.But the optical parameters are deduced using band-model consideration for thin films of Pc.The spectral and optical parameters have also been investigated by using the spectrophotometric measurements of transmittance and reflectance in the wavelength range 200–2500 nm.The absorption spectra recorded in the UV–VIS region show two absorption bands of phthalocyanine (Pc) molecule, namely the Soret band (B) and the Q-band. The Q-band shows its characteristic splitting (Davydov splitting) with ΔQ=0.23 eV.Some of the important spectral parameters, namely optical absorption coefficient (α), molar extinction coefficient (_molar), oscillator strength (f), electric dipole strength (q²) and absorption half bandwidth (Δλ) of the principle optical transitions have been evaluated.The fundamental and the onset indirect energy gaps could be estimated as 2.90 + or − 0.05 and 1.51 eV, respectively.The refractive index showed an anomalous dispersion in the absorption region as well as normal dispersion in the transparent region. From analysis of dispersion curves, the dielectric constants, the dispersion parameters and the molar polarizability were obtained.All the above parameters were obtained for films as deposited and as annealed. No remarkable annealing effect on many parameters was observed.     

Structural,optical and dispersion characteristics of nanocrystalline GaN films prepared by MOVPE

In this work, nanocrystalline GaN film was grown on a c-plane sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). The structural and optical properties of the nanocrystalline GaN thin film were studied. The morphological and structural properties of GaN film were studied by scanning electron microscopy (SEM) and X-ray diffraction (XRD), respectively. According to the X-ray diffraction spectrum, a GaN film was formed with a wurtzite structure, which is the stable phase. The optical parameters were determined using spectrophotometric measurements of transmittance and reflectance in the wavelength range 200–2500 nm. The analysis of the spectral behavior of the absorption coefficient in the intrinsic absorption region reveals a direct allowed transition with a band gap of 3.34 eV. The dispersion of the refractive index is discussed in terms of the single oscillator Wemple–Didomenico (WD) model. The single oscillator energy (E_o), the dispersion energy (E_d), the high frequency dielectric constant (ε_∞), the lattice dielectric constant (ε_L) and the free charge carrier concentration (N) were estimated. From the optical dielectric analysis, the optical conductivity, volume and surface energy loss functions were calculated. Moreover, the third-order nonlinear optical susceptibility χ⁽³⁾ was also considered.     

Electrodeposition and growth mechanism of SnSe thin films

Tin selenide (SnSe) thin films were electrochemically deposited onto Au(1 1 1) substrates from an aqueous solution containing SnCl₂, Na₂SeO₃, and EDTA at room temperature (25 °C). The electrochemical behaviors and the codeposition potentials of Sn and Se were explored by cyclic voltammetry. X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and UV-vis absorption spectroscopy were employed to characterize the thin films. When the electrodeposition potential increased, the Se content in the films decreased. It was found that the stoichiometric SnSe thin films could be obtained at −0.50 V. The as-deposited films were crystallized in the preferential orientation along the (1 1 1) plane. The morphologies of SnSe films could be changed from spherical grains to platelet-like particles as the deposition potential increases. The SEM investigations show that the film growth proceeds via nucleation, growth of film layer and formation of needle-like particles on the overlayer of the film. The optical absorption study showed the film has direct transition with band gap energy of 1.3 eV.