Effect of structure on the x-ray photoelectron spectra of nickel oxides

The structural differences of various nickel oxide thin films have been determined by transmission electron diffraction. The structure of a single crystal of NiO was verified by X-ray diffraction. The effect of these structural variations upon valence band electronic structure was ascertained by X-ray photoelectron spectroscopy. Results suggest the 3d levels are affected by the presence of defects and the charge state of the nickel ions. These different d level structures may account for differences in catalytic and magnetic properties.     

Electron transport in solids and liquids

We review our recent experimental studies of the excess electron states in insulating solids and liquids. We use a muon spin relaxation technique to explore the phenomenon of delayed muonium formation: excess electrons liberated in the μ⁺ ionization track converge upon the positive muons and form Mu (μ⁺e^?) atoms in which the μ⁺ polarization is partially lost. The spatial distribution of such electrons with respect to the muon is shown to be highly anisotropic: the μ⁺ thermalizes well “downstream” from the center of the electron distribution. Measurements in electric fields up to 30 kV/cm allow one to estimate the characteristic muon-electron distance in different insulators: the results range from 10^?6 to 10^?4 cm. Such a microscopic length scale enables the electron to sometimes spend its entire free lifetime in a state which may not be detected by conventional macroscopic techniques. This circumstance illustrates the potential of μ⁺SR techniques in studies of electron transport in matter. The muonium formation process in condensed matter is shown to depend critically upon whether the excess electron forms a polaron or remains in a delocalized state. Different mechanisms of electron transport in insulators are discussed.     

In situ observation of thermal relaxation of interstitial-vacancy pair defects in a graphite gap

Direct observation of individual defects during formation and annihilation in the interlayer gap of double-wall carbon nanotubes (DWNT) is demonstrated by high-resolution transmission electron microscopy. The interlayer defects that bridge two adjacent graphen layers in DWNT are stable for a macroscopic time at the temperature below 450 K. These defects are assigned to a cluster of one or two interstitial-vacancy pairs (I-V pairs) and often disappear just after their formation at higher temperatures due to an instantaneous recombination of the interstitial atom with vacancy. Systematic observations performed at the elevated temperatures find a threshold for the defect annihilation at 450-500 K, which, indeed, corresponds to the known temperature for the Wigner energy release.     

Effect of a dust component on the rates of elementary processes in low-temperature plasmas

Elementary processes in dusty, beam-driven plasma discharges are studied experimentally and theoretically for the first time. A theoretical model is constructed for a beam-driven plasma containing macroscopic particles. The effect of macroscopic particles on the electron energy distribution function is estimated assuming a Coulomb field for the particles. The resulting rate of electron-ion recombination on the macroscopic particles is compared with the electron loss constant calculated from the electron energy distribution function with an electron absorption constant in the orbital-motion approximation. This approximation, which is valid in the collisionless case, is found to work satisfactorily beyond its range of applicability. The distributions of the charged particles and electric fields created by macroscopic particles in a helium plasma are determined. The experimental data demonstrate the importance of secondary emission by high-energy electrons. Zh. éksp. Teor. Fiz. 115, 2020–2036 (June 1999)     

Atomic-scale visualization of antisite defects in LiFePO4

We visualize the antisite exchange defects in LiFePO4 crystals with an ordered olivine structure by using annular dark-field scanning transmission electron microscopy (STEM). A recognizable bright contrast is observed in some of the Li columns of STEM images in a sample annealed at a lower temperature, which directly demonstrates the disordered occupations by Fe atoms. Furthermore, such exchange defects appear to be locally aggregated rather than homogeneously dispersed in the lattice, although their overall concentration is fairly low. The present study emphasizes the significance of atomic-level observations for the defect distribution that cannot be predicted by macroscopic analytical methods.     

Laser desorption of energetic sodium ions from single-crystal NaNO3 at 1064 nm

We report electron and Na⁺ ion emission from single-crystal sodium nitrate (~10 eV band gap) upon exposure to IR (1064 nm, 1.16 eV) laser radiation. The fluence dependence of both the ion and the electron yield is highly nonlinear, and the kinetic energies of the emitted ions can reach values up to 5 eV. The fluence dependence and the ion energy distributions can be understood by a previously presented model involving multiple photon charge transfer plus electrostatic ejection of adions siting atop electron traps. Further evidence for the role of defects in the observed ion emission are provided by two-beam experiments; one beam (UV laser) is used to generate defects and the second beam (IR laser) is used to photodesorb the ions. Such experiments demonstrate that exposure of the sodium nitrate surfaces to UV laser radiation significantly increases the ion emission due to IR laser radiation.     

Positron lifetimes in proton-irradiated silicon

Substantial extensions of the shorter of two positron lifetimes in p-type silicon upon proton irradiations have been observed, showing that some induced defects can act as traps for positrons. The mean electron density of the defect has been found to be about 30 per cent less than that in the perfect part of the crystal. The result demonstrates that the positron-lifetime measurement is a useful tool for studying defects in semiconductors.     

同质硅分子束外延层的界面缺陷的研究

对同质硅分子束外延层的界面缺陷进行了测试与分析．对存在高浓度施主型界面缺陷的Ｐ型材料，通过解泊松方程计算了该材料的肖特基势垒的能带图，得到了该缺陷能级上电子的填充与发射随外加反向偏压变化的情况．并分析了用深能级瞬态谱（ＤＬＴＳ）对其进行测试所需的条件，以及与常规的ＤＬＴＳ测试结果的不同之处．提出了可同时对该缺陷上电子的发射和俘获过程进行ＤＬＴＳ测量的方法．实验测量结果表明，该高密度的界面缺陷的能级位置位于Ｅ_c－０．３０ｅＶ． 关键词：     

Description of the inner state and kinetics of Rydberg atoms based on the kinetic Boltzmann equation for Rydberg electrons

The inner characteristics and kinetics of Rydberg atoms (RAs) excited selectively over energy in a buffer gas are considered using the kinetic equation for a classical distribution function of Rydberg electrons (REs). The distribution of REs over coordinates and velocities in a moving RA is found in the general case. In a moving RA, the effect of “ blowing off” an electron cloud by a buffer gas is substantial. In this case, however, the average values of the kinetic and potential energies of REs weakly deviate from those predicted by the virial theorem. The latent and macroscopic polarizations of the medium caused by the blowing-off effect are predicted. The macroscopic polarization appears upon velocity-selective excitation of RAs and produces the bias current, which transforms to a usual electric current when the integrity of the RA is lost due to the blowing-off effect. The calculated “ electron” contribution to the transport frequency of collisions of the RA with buffer gas atoms proved to be small compared to that from the ion core.     

Effect of grain boundary on the mechanical behaviors of irradiated metals: a review

The design of high irradiation-resistant materials is very important for the development of next-generation nuclear reactors. Grain boundaries acting as effective defect sinks are thought to be able to moderate the deterioration of mechanical behaviors of irradiated materials, and have drawn increasing attention in recent years. The study of the effect of grain boundaries on the mechanical behaviors of irradiated materials is a multi-scale problem. At the atomic level, grain boundaries can effectively affect the production and formation of irradiation-induced point defects in grain interiors, which leads to the change of density, size distribution and evolution of defect clusters at grain level. The change of microstructure would influence the macroscopic mechanical properties of the irradiated polycrystal. Here we give a brief review about the effect of grain boundaries on the mechanical behaviors of irradiated metals from three scales: microscopic scale, mesoscopic scale and macroscopic scale.     

Effect of electron and proton irradiation on recombination centers in GaAsN grown by chemical beam epitaxy

Deep level transient spectroscopy (DLTS) was deployed to study the evolution, upon electron irradiation and hydrogenation of GaAsN grown by chemical beam epitaxy, of the main nitrogen-related nonradiative recombination center (E1), localized at 0.33 eV below the bottom edge of the conduction band of the alloy. On one hand, the electron irradiation was found to enhance the density of E1 depending on the fluence dose. On the other hand, the hydrogenation was found to passivate completely E1. Furthermore, two new lattice defects were only observed in hydrogenated GaAsN films and were suggested to be in relationship with the origin of E1. The first defect was an electron trap at average thermal activation energy of 0.41 eV below the CBM of GaAsN and was identified to be the EL5-type native defect in GaAs, originating from interstitial arsenic (As_i). The second energy level was a hole trap, newly observed at average thermal activation energy of 0.11 eV above the valence band maximum of the alloy and its origin was tentatively suggested to be in relationship with the monohydrogen–nitrogen (N–H) complex. As the possible origin of E1 was tentatively associated with the split interstitial formed from one N atom and one As atom in single V-site [(N–As)_As], we strongly suggested that the new hole trap took place after the dissociation of E1 and the formation of N–H complex.     

Strict Kinetic Treatment of the Electron Response to Spatial Field Disturbances in Nonequilibrium Plasmas

In generalization of former approaches for the simplified solution of the inhomogeneous electron Boltzmann equation a higher order solution technique has been developed. This technique is based on a multi-term expansion of the electron velocity distribution function and allows a strict study of the electron kinetics in plasmas acted upon by space-dependent electric fields. This solution technique is used to investigate the response of the plasma electrons to spatially limited disturbances of the electric field in weakly ionized plasmas of helium and mercury. By solving the kinetic equation with increasing order of the multi-term expansion the convergent solution of the kinetic problem and thus the strict spatial behaviour of the velocity distribution and of significant macroscopic properties of the electrons has been determined and analysed. Furthermore, the impact of higher order terms of the expansion has been revealed and the falsification of the velocity distribution and of related macroscopic properties has been evaluated when instead of the multi-term solution the simpler two-term solution of the kinetic equation is used.     

Spontaneous radiation of a brownian nanoparticle

It is shown that a charged Brownian nanoparticle (or an electron) similar to a two-level atom can generate spontaneous and induced radiation upon switching on an external field. The diffusion mechanism of charging nanoparticles is examined. The radiation process is a macroscopic quantum phenomenon, which can be used in synthetic biology, medicine, and other fields of science and engineering.     

Charging of metal atoms on ultrathin MgO/Mo(100) films

The chemical activity of supported metal nanoclusters is enhanced by electronic charging induced by the interaction with surface defects. We use density functional theory plane wave calculations to show that charging of metal atoms with high electron affinity like Au is possible also in the absence of defects by atom deposition on ultrathin MgO films (1 to 3 layers) grown on Mo(100). The Au 6s level falls below the Fermi level of Mo, leading to electron transfer from Mo to Au by direct tunneling through the insulating MgO film. The effect is not observed for Pd, whose 5s empty level falls just above the Fermi level of Mo, or for thicker MgO films.     

Defect reduction in sublimation grown SiC bulk crystals

For several years the major focus of material issues in SiC substrates was laid on the reduction of macroscopic defects like polytype inclusions, low angle grain boundaries and micropipes. Although significant improvements have been achieved, there are still shortcomings in material quality that have to be overcome. Since it is clear that dislocations are the main reason for degradation in power devices the prevailing attention has shifted to that field of material research. The aim of our work was to investigate the mechanisms that affect the generation of macroscopic and microscopic defects during sublimation growth. Intense studies were utilized on dislocation and stacking fault formation. For this reason we systematically varied parameters of the growth process and applied several methods for the characterization to evaluate material properties most precisely, e.g. KOH-defect-etching, X-ray-diffraction, electron microscopy and optical microscopy. The investigations were accompanied by failure analysis of devices of the Schottky type. We found out that for the improvement of substrate quality emphasis has to be laid on the reduction of thermoelastic stress in the growing crystal. From results of numerical calculations we were able to derive moderate growth conditions with reduced temperature gradients prevailing during the growth process. As a consequence we succeeded in decreasing the defect concentration. The best value so far achieved for the sum of both BPD and TED was 7×10³ cm⁻².     

Endogenous magnetic reconnection and associated high energy plasma processes

An endogenous reconnection process involves a driving factor that lays inside the layer where a drastic change of magnetic field topology occurs. A process of this kind is shown to take place when an electron temperature gradient is present in a magnetically confined plasma and the evolving electron temperature fluctuations are anisotropic. The width of the reconnecting layer remains significant even when large macroscopic distances are considered. In view of the fact that there are plasmas in the Universe with considerable electron thermal energy contents this feature can be relied upon in order to produce generation or conversion of magnetic energy, high energy particle populations and momentum and angular momentum transport.     

六方碳化硅中的深能级缺陷

文章作者利用深能级瞬态谱(DLTS)，正电子湮灭谱(PAS)和光致荧光谱(PL)等谱分析技术研究了六方碳化硅中具有电活性的深能级缺陷、这些深能级缺陷分别通过不同能量的电子辐照、中子辐照，或氦离子注入等产生．经过研究和分析各种实验测试的相关图谱，作者给出了六方碳化硅中一些重要的深能级缺陷在可控辐照条件下产生和退火行为的研究结果以及这些深能级缺陷相关结构的实验依据．     

链间耦合对聚乙炔多链体系中电子极化子再激发态的影响

从拓展紧束缚模型出发,研究了链间耦合对反式聚乙炔多链体系中电子极化子再激发态的晶格位形、净电荷密度、局域能级波函数和态密度的影响。结果发现：对于两条链体系,当链间耦合很小（eV）时,注入到系统中的电子只会在第一条链上诱发产生一个晶格缺陷,形成电子极化子再激发态,这和单链体系是一致,而第二条链仍是二聚化基态。随着链间耦合的增大,第一条链上缺陷的局域度减少而第二条链上的缺陷局域度相应增加,直至两条链上的位形相同。对于多条链（5条链和6条链）体系,当耦合很小（0.05eV）时,电子极化子再激发态也只会存在于一条链上,当链间耦合较强时,极化子再激发态会在链间层次性地扩展开来,并不会出现多条链位形相同。从两条链的能级图上可以看到随着链间耦合的增大,体系的带隙不断的增大和电子态密度显示的是完全吻合的,体系的导电性减弱。通过分析两条链体系在eV和eV的能级态密度,发现链间耦合越强,则中间局域能级的态密度越小,最后没有中间局域态。     

链间耦合对聚乙炔多链体系中电子极化子再激发态的影响

采用拓展紧束缚Su-Schrieffer-Heeger(SSH)模型,研究了链间耦合对反式聚乙炔多链体系中电子极化子再激发态的晶格位形、净电荷密度、局域能级波函数和态密度的影响.结果发现:对于两条链体系,当链间耦合很小(t⊥≤0.01 e V)时,注入到系统中的电子只会在第一条链上诱发产生一个晶格缺陷,形成电子极化子再激发态,这和单链体系是一致,而第二条链仍是二聚化基态.随着链间耦合的增大,第一条链上缺陷的局域度减少而第二条链上的缺陷局域度相应增加,直至两条链上的位形相同;对于多条链(5条链和6条链)体系,当耦合很小(t⊥≤0.05 e V)时,电子极化子再激发态也只会存在于一条链上,当链间耦合较强时,极化子再激发态会在链间层次性地扩展开来,并不会出现多条链位形相同;从两条链的能级图上可以看到随着链间耦合t⊥的增大,体系的带隙不断的增大和电子态密度显示的是完全吻合的,体系的导电性减弱.通过分析两条链体系在t⊥=0 e V和t⊥=0.1 e V的能级态密度,发现链间耦合越强,则中间局域能级的态密度越小,最后没有中间局域态.