Space-charge-induced interband optical nonlinearities in asymmetric coupled quantum wells

Space-charge-induced optical nonlinearities for asymmetric coupled quantum wells have been studied. Calculations for optimized AlGaAs structures show that a blue-shift of the band gap of 9 meV at a carrier density of 10¹² cm^-2 can be obtained. Experimental comparisons with a rectangular well show a large increase in room-temperature nonlinearities.     

Carrier dynamics in type-II GaAsSb/GaAs quantum wells

Time-resolved photoluminescence (PL) characteristics of type-II GaAsSb/GaAs quantum wells are presented. The PL kinetics are determined by the dynamic band bending effect and the distribution of localized centers below the quantum well band gap. The dynamic band bending results from the spatially separated electron and hole distribution functions evolving in time. It strongly depends on the optical pump power density and causes temporal renormalization of the quantum well ground-state energy occurring a few nanoseconds after the optical pulse excitation. Moreover, it alters the optical transition oscillator strength. The measured PL lifetime is 4.5 ns. We point out the critical role of the charge transfer processes between the quantum well and localized centers, which accelerate the quantum well photoluminescence decay at low temperature. However, at elevated temperatures the thermally activated back transfer process slows down the quantum well photoluminescence kinetics. A three-level rate equation model is proposed to explain these observations.     

The binding energy of a shallow donor in type-II quantum wells

The binding energy of a shallow donor in type-II quantum wells was calculated by a variational method, using a single parameter. A type-II AlAs/GaAs single quantum well was chosen to calculate the binding energy of a shallow donor as a function of the donor position and the barrier width.     

Optical properties of type-II InGaN/GaAsN/GaN quantum wells

Optical properties of type-II InGaN/GaNAs QW light-emitting diodes are investigated by using the multiband effective mass theory. These results are compared with those of conventional InGaN/GaN QW structures. The type-II InGaN/GaNAs/GaN QW structure shows much larger spontaneous emission and optical gain than that of a conventional QW structure. This can be explained by the fact that, in the case of the type-II QW structure, the effective well width is greatly reduced. A type-II QW structure shows that the peak position at a high carrier density is similar to that (530 nm) at a low carrier density. On the other hand, in the case of a conventional QW structure, the peak position is largely blueshifted at a high carrier density.     

Radiative recombination of indirect exciton in type-II ZnSeTe/ZnSe multiple quantum wells

The tunability of the emission energy, oscillator strength and photoluminescence (PL) efficiency by varying the well thickness and excitation density was demonstrated in the ZnSe_0.8Te_0.2/ZnSe multiple quantum wells. A significant blueshift about 260 meV of the PL peak energy was observed as the well width decreased from 5 to 1 nm. An extraordinary long lifetime (300 ns) of the recombination for the widest sample was detected. The binding energy of the indirect excitons is determined as 12 meV for the thinnest sample. The reduction of PL efficiency by thermal energy is greatly suppressed by employing a high excitation power.     

Electrical and optical properties of parabolic semiconducting quantum wells

We investigate theoretically the optical and electrical properties of parabolic semiconducting quantum well structures. In our calculations, we assume that the confinement of the carriers is in an infinite parabolic well. We show that the carrier mobility in the plane perpendicular to the direction of confinements is directly proportional to the harmonic oscillator length λ whose value depends upon the partitioning of the band gap discontinuity between the conduction and valence bands. We have also calculated the linewidth for intra-subband resonances which should occur for electromagnetic radiation polarized in the direction of carrier confinement and show that the linewidth is inversely proportional to λ and directly proportional to the temperature when the linewidth is dominated by acoustic phonon scattering. The absorption coefficient for interband optical transitions shows equally spaced steps as a function of photon energy where the value of the spacing between adjacent steps depends upon the partitioning of the band gap discontinuity. Carrier freeze-out in the intrinsic conduction occurs due to the presence of zero point energies in the conduction and valence bands arising from the carrier confinement. These zero point energies also are found to depend upon the partitioning of the band gap discontinuities. Therefore, information about the partitioning of the energy band gap discontinuity between the conduction and valence bands can be obtained by measuring these various optical and electrical transport properties of a parabolic quantum well semiconducting structure under those conditions when the model of an infinite parabolic well approximates the real system.     

GaN基量子阱的激子跃迁和光学性质

采用光致发光谱、光致发光激发谱以及拉曼光谱对GaN基量子阱材料进行了实验观察和分析 .实验结果表明样品中量子点结构不均匀及InGaN层中In成分分布不均匀 ,且其光致发光谱的波峰是由自由激子辐射复合发光引起的 .同时由室温下InGaN/GaN量子阱的拉曼谱可得知InGaN/GaN多量子阱的结构特征     

Linear and nonlinear optical properties of semiconductor quantum wells

In this article we review the experimental and theoretical investigations of the linear and nonlinear optical properties of semiconductor quantum well structures, including the effects of electrostatic fields, extrinsic carriers and real or virtual photocarriers.     

Intersubband optical absorption of holes in quantum wells

The problem of hole energy spectrum and interlevel optical absorption in p -type quantum wells is considered theoretically. To obtain analytical results, terms in the Luttinger Hamiltonian containing in-plane momentum are treated as a perturbation. In this approximation energy spectrum, wave functions, hole statistics and interlevel optical matrix elements can be found for an arbitrary shape of quantum well. Finally, optical absorption spectra are calculated for different interlevel transitions.     

Visible femtosecond pulses by second-harmonic generation of a cw mode-locked KTP optical parametric oscillator

Efficient generation of femtosecond pulses in the wavelength range from 520 to 675 nm by external frequency doubling the signal wave of a non-critically phase-matched picosecond KTP Optical Parametric Oscillator (OPO) in a non-critically phase-matched temperature tuned LiB₃O₅(LBO) crystal is demonstrated. An average power of the second harmonic as high as 310 mW at 575 nm was generated. In the absence of group velocity mismatch of LBO for a wavelength of the OPO at about 1.3 µm the minimum second-harmonic pulse width was 400 fs at 645 nm.